{"id":"https://openalex.org/W7143301072","doi":"https://doi.org/10.48550/arxiv.2603.26439","title":"First Demonstration of 28 nm Fabricated FeFET-Based Nonvolatile 6T SRAM","display_name":"First Demonstration of 28 nm Fabricated FeFET-Based Nonvolatile 6T SRAM","publication_year":2026,"publication_date":"2026-03-27","ids":{"openalex":"https://openalex.org/W7143301072","doi":"https://doi.org/10.48550/arxiv.2603.26439"},"language":null,"primary_location":{"id":"doi:10.48550/arxiv.2603.26439","is_oa":true,"landing_page_url":"https://doi.org/10.48550/arxiv.2603.26439","pdf_url":null,"source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Preprint"},"type":"preprint","indexed_in":["datacite"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://doi.org/10.48550/arxiv.2603.26439","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5066812660","display_name":"Albi Mema","orcid":"https://orcid.org/0000-0001-7841-1975"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Mema, Albi","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054764590","display_name":"Simon Thomann","orcid":"https://orcid.org/0000-0002-7902-9353"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Thomann, Simon","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010528437","display_name":"Narendra Singh Dhakad","orcid":"https://orcid.org/0000-0003-2848-1785"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Dhakad, Narendra Singh","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5059133190","display_name":"Hussam Amrouch","orcid":"https://orcid.org/0000-0002-5649-3102"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Amrouch, Hussam","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9695000052452087,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9695000052452087,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.013700000010430813,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.003599999938160181,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.760699987411499},{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.5669000148773193},{"id":"https://openalex.org/keywords/standby-power","display_name":"Standby power","score":0.4878000020980835},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.4586000144481659},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.44679999351501465},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.4424000084400177},{"id":"https://openalex.org/keywords/enhanced-data-rates-for-gsm-evolution","display_name":"Enhanced Data Rates for GSM Evolution","score":0.4077000021934509},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.39910000562667847},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.38989999890327454}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.760699987411499},{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.5669000148773193},{"id":"https://openalex.org/C7140552","wikidata":"https://www.wikidata.org/wiki/Q1366402","display_name":"Standby power","level":3,"score":0.4878000020980835},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.47530001401901245},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.4586000144481659},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.45329999923706055},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.44679999351501465},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4458000063896179},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.4424000084400177},{"id":"https://openalex.org/C162307627","wikidata":"https://www.wikidata.org/wiki/Q204833","display_name":"Enhanced Data Rates for GSM Evolution","level":2,"score":0.4077000021934509},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.39910000562667847},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.38989999890327454},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.3804999887943268},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3700000047683716},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.36410000920295715},{"id":"https://openalex.org/C138236772","wikidata":"https://www.wikidata.org/wiki/Q25098575","display_name":"Edge device","level":3,"score":0.3443000018596649},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3407999873161316},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.31049999594688416},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.30169999599456787},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.2946999967098236},{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.29269999265670776},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.29159998893737793},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.28839999437332153},{"id":"https://openalex.org/C82876162","wikidata":"https://www.wikidata.org/wiki/Q17096504","display_name":"Latency (audio)","level":2,"score":0.2784999907016754},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.27570000290870667},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2687000036239624},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.26829999685287476},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.2662000060081482},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.25600001215934753},{"id":"https://openalex.org/C2779602883","wikidata":"https://www.wikidata.org/wiki/Q15544750","display_name":"Memory architecture","level":2,"score":0.2554999887943268}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.48550/arxiv.2603.26439","is_oa":true,"landing_page_url":"https://doi.org/10.48550/arxiv.2603.26439","pdf_url":null,"source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":null,"raw_source_name":null,"raw_type":"Preprint"}],"best_oa_location":{"id":"doi:10.48550/arxiv.2603.26439","is_oa":true,"landing_page_url":"https://doi.org/10.48550/arxiv.2603.26439","pdf_url":null,"source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Preprint"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.7951511144638062,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":[],"abstract_inverted_index":{"With":[0,181],"the":[1,15,25,35,60,68,100,103,134,185],"staggering":[2],"increase":[3],"of":[4,67,102,202],"edge":[5,52,225],"compute":[6],"applications":[7],"like":[8],"Internet-of-Things":[9],"(IoT)":[10],"and":[11,27,47,54,83,95,152,174,224],"artificial":[12],"intelligence":[13],"(AI),":[14],"demand":[16],"for":[17,222],"fast,":[18],"energy-efficient":[19],"on-chip":[20],"memory":[21,31,76],"is":[22,34],"growing.":[23],"While":[24],"fast":[26],"mature":[28],"static":[29],"random-access":[30],"(SRAM)":[32],"technology":[33,166],"standard":[36],"choice,":[37],"its":[38],"volatility":[39],"requires":[40],"a":[41,64,119,162,189],"constant":[42],"supply":[43],"voltage":[44],"to":[45,171,187,210],"operate":[46],"store":[48],"data.":[49],"Especially":[50],"in":[51,161],"AI":[53],"IoT":[55,223],"devices":[56],"that":[57],"often":[58],"idle,":[59],"leakage":[61],"power":[62,70,89],"consumes":[63],"significant":[65],"portion":[66],"constrained":[69],"budget.":[71],"For":[72],"this,":[73,182],"emerging":[74],"non-volatile":[75,121],"(NVM)":[77],"technologies":[78],"such":[79],"as":[80],"Resistive":[81],"RAM":[82],"ferroelectric":[84],"FET":[85],"(FeFET)":[86],"offer":[87],"zero-standby":[88],"consumption":[90],"but":[91],"suffer":[92],"from":[93],"integration":[94],"performance":[96],"tradeoffs.":[97],"To":[98],"harness":[99],"benefits":[101],"different":[104],"technologies,":[105],"hybrid":[106,120],"architectures":[107],"have":[108],"been":[109],"proposed,":[110],"combining":[111],"SRAM":[112,122],"with":[113,139],"NVM":[114],"devices.":[115],"This":[116],"work":[117],"proposes":[118],"(nvSRAM)":[123],"architecture":[124],"based":[125],"on":[126],"recently":[127],"demonstrated":[128],"PMOS":[129,136],"FeFETs":[130],"(p-FeFETs).":[131],"By":[132],"replacing":[133],"two":[135],"pull-up":[137],"transistors":[138],"p-FeFETs,":[140],"we":[141,183],"achieve":[142],"non-volatility":[143],"without":[144],"additional":[145],"transistors.":[146],"The":[147,195,205],"design":[148],"supports":[149],"seamless":[150],"power-down":[151],"restore":[153,179],"operation,":[154],"thus":[155],"eliminating":[156],"standby":[157],"leakage.":[158],"SPICE":[159],"simulations":[160],"commercial":[163],"28":[164],"nm":[165],"show":[167,177],"read":[168,206],"latency":[169],"comparable":[170],"conventional":[172],"SRAM,":[173,212],"on-silicon":[175],"measurements":[176],"robust":[178],"behavior.":[180],"are":[184],"first":[186],"demonstrate":[188],"fabricated":[190],"6T":[191],"nvSRAM":[192],"cell":[193,197],"design.":[194],"resulting":[196],"achieves":[198],"an":[199],"area":[200],"footprint":[201],"99":[203],"$\u03bcm^2$.":[204],"path":[207],"remains":[208],"identical":[209],"baseline":[211],"enabling":[213],"high-speed":[214],"operation":[215],"while":[216],"being":[217],"non-volatile,":[218],"making":[219],"it":[220],"ideal":[221],"systems.":[226]},"counts_by_year":[],"updated_date":"2026-07-28T07:46:37.118299","created_date":"2026-03-31T00:00:00"}