{"id":"https://openalex.org/W4362706891","doi":"https://doi.org/10.48550/arxiv.2304.03124","title":"FeFET-based MirrorBit cell for High-density NVM storage","display_name":"FeFET-based MirrorBit cell for High-density NVM storage","publication_year":2023,"publication_date":"2023-04-06","ids":{"openalex":"https://openalex.org/W4362706891","doi":"https://doi.org/10.48550/arxiv.2304.03124"},"language":"en","primary_location":{"id":"pmh:oai:arXiv.org:2304.03124","is_oa":true,"landing_page_url":"http://arxiv.org/abs/2304.03124","pdf_url":"https://arxiv.org/pdf/2304.03124","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":null,"issn":null,"is_oa":true,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"text"},"type":"preprint","indexed_in":["arxiv","datacite"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://arxiv.org/pdf/2304.03124","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5046373179","display_name":"Paritosh Meihar","orcid":"https://orcid.org/0000-0001-9839-6055"},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Meihar, Paritosh","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019497895","display_name":"Rowtu Srinu","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Srinu, Rowtu","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010808696","display_name":"Vivek A. Saraswat","orcid":"https://orcid.org/0000-0002-4720-6204"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Saraswat, Vivek","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031808877","display_name":"Sandip Lashkare","orcid":"https://orcid.org/0000-0003-2018-1681"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Lashkare, Sandip","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013521911","display_name":"Halid Mulaosmanovic","orcid":"https://orcid.org/0000-0001-9524-5112"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Mulaosmanovic, Halid","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064444897","display_name":"Stefan D\u00fcnkel","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Singh, Ajay Kumar","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113965605","display_name":"Sven Beyer","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"D\u00fcnkel, Stefan","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073593093","display_name":"Udayan Ganguly","orcid":"https://orcid.org/0000-0002-1498-5993"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Beyer, Sven","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"last","author":{"id":null,"display_name":"Ganguly, Udayan","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Ganguly, Udayan","raw_affiliation_strings":[],"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5046373179"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.983299970626831,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12692","display_name":"Magnetic Field Sensors Techniques","score":0.9797999858856201,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.6764266490936279},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.590686023235321},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5541665554046631},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5248767733573914},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4573211073875427},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.4553632140159607},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.44903209805488586},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.44901061058044434},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4320528507232666},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.42195767164230347},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.318988174200058},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.30272796750068665},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21351680159568787}],"concepts":[{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.6764266490936279},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.590686023235321},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5541665554046631},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5248767733573914},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4573211073875427},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.4553632140159607},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.44903209805488586},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.44901061058044434},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4320528507232666},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.42195767164230347},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.318988174200058},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.30272796750068665},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21351680159568787},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C77088390","wikidata":"https://www.wikidata.org/wiki/Q8513","display_name":"Database","level":1,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"pmh:oai:arXiv.org:2304.03124","is_oa":true,"landing_page_url":"http://arxiv.org/abs/2304.03124","pdf_url":"https://arxiv.org/pdf/2304.03124","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":null,"issn":null,"is_oa":true,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"text"},{"id":"doi:10.48550/arxiv.2304.03124","is_oa":true,"landing_page_url":"https://doi.org/10.48550/arxiv.2304.03124","pdf_url":null,"source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":null,"issn":null,"is_oa":true,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":null,"is_accepted":false,"is_published":null,"raw_source_name":null,"raw_type":"article"}],"best_oa_location":{"id":"pmh:oai:arXiv.org:2304.03124","is_oa":true,"landing_page_url":"http://arxiv.org/abs/2304.03124","pdf_url":"https://arxiv.org/pdf/2304.03124","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":null,"issn":null,"is_oa":true,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"text"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.4399999976158142,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320320719","display_name":"Department of Science and Technology, Ministry of Science and Technology, India","ror":"https://ror.org/0101xrq71"},{"id":"https://openalex.org/F4320325255","display_name":"Ministry of Electronics and Information technology","ror":null},{"id":"https://openalex.org/F4320334972","display_name":"Mission on Nano Science and Technology","ror":"https://ror.org/0101xrq71"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4362706891.pdf","grobid_xml":"https://content.openalex.org/works/W4362706891.grobid-xml"},"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W3014521742","https://openalex.org/W2617868873","https://openalex.org/W3204141294","https://openalex.org/W2389214306","https://openalex.org/W4386230336","https://openalex.org/W4306968100","https://openalex.org/W2113742827","https://openalex.org/W2170979950","https://openalex.org/W1900707063","https://openalex.org/W2588941787"],"abstract_inverted_index":{"HfO2-based":[0,67],"Ferroelectric":[1],"field-effect":[2],"transistor":[3],"(FeFET)":[4],"has":[5,82],"become":[6],"a":[7,153],"center":[8],"of":[9,16,79,115,139],"attraction":[10],"for":[11,172],"non-volatile":[12,174],"memory":[13,175],"applications":[14],"because":[15],"their":[17],"low":[18],"power,":[19],"fast":[20],"switching":[21],"speed,":[22],"high":[23],"scalability,":[24],"and":[25,113,136],"CMOS":[26,76],"compatibility.":[27],"In":[28],"this":[29],"work,":[30],"we":[31,144],"show":[32],"an":[33,56],"n-channel":[34],"FeFET-based":[35],"Multibit":[36],"memory,":[37],"termed":[38],"MirrorBit,":[39],"which":[40],"effectively":[41],"doubles":[42],"the":[43,48,53,93,111,120,125,133,140,169],"chip":[44,170],"density":[45,171],"via":[46],"programming":[47,155],"gradient":[49],"ferroelectric":[50],"polarizations":[51],"in":[52,157],"gate":[54],"using":[55,124,152],"appropriate":[57],"biasing":[58],"scheme.":[59],"We":[60,129],"have":[61,130,145],"experimentally":[62],"demonstrated":[63],"MirrorBit":[64,80,116,141],"on":[65,119],"GlobalFoundries":[66,126],"FeFET":[68,121,127,148,151],"devices":[69],"fabricated":[70],"at":[71,89],"28":[72],"nm":[73],"bulk":[74],"HKMG":[75],"technology.":[77],"Retention":[78],"states":[81,117],"been":[83],"shown":[84],"up":[85],"to":[86,97,109,167],"$10^5$":[87],"s":[88],"different":[90],"temperatures.":[91],"Also,":[92],"endurance":[94],"is":[95,106],"found":[96],"be":[98],"more":[99],"than":[100],"$10^3$":[101],"cycles.":[102],"A":[103],"TCAD":[104],"simulation":[105],"also":[107,131],"presented":[108],"explain":[110],"origin":[112],"working":[114],"based":[118],"model":[122],"calibrated":[123],"device.":[128],"proposed":[132],"array-level":[134],"implementation":[135],"sensing":[137],"methodology":[138],"memory.":[142],"Thus,":[143],"converted":[146],"1-bit":[147],"into":[149],"2-bit":[150],"particular":[154],"scheme":[156],"existing":[158],"FeFET,":[159],"without":[160],"needing":[161],"any":[162],"notable":[163],"fabrication":[164],"process":[165],"alteration,":[166],"double":[168],"high-density":[173],"storage.":[176]},"counts_by_year":[],"updated_date":"2026-02-09T09:26:11.010843","created_date":"2025-10-10T00:00:00"}