{"id":"https://openalex.org/W2895604670","doi":"https://doi.org/10.3906/elk-1803-71","title":"Tunable Class-F high power amplifier at X-Band using GaN HEMT","display_name":"Tunable Class-F high power amplifier at X-Band using GaN HEMT","publication_year":2018,"publication_date":"2018-09-28","ids":{"openalex":"https://openalex.org/W2895604670","doi":"https://doi.org/10.3906/elk-1803-71","mag":"2895604670"},"language":"en","primary_location":{"id":"doi:10.3906/elk-1803-71","is_oa":true,"landing_page_url":"https://doi.org/10.3906/elk-1803-71","pdf_url":"https://doi.org/10.3906/elk-1803-71","source":{"id":"https://openalex.org/S32837994","display_name":"TURKISH JOURNAL OF ELECTRICAL ENGINEERING & COMPUTER SCIENCES","issn_l":"1300-0632","issn":["1300-0632","1303-6203"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310318422","host_organization_name":"Scientific and Technological Research Council of Turkey (TUBITAK)","host_organization_lineage":["https://openalex.org/P4310318422"],"host_organization_lineage_names":["Scientific and Technological Research Council of Turkey (TUBITAK)"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"TURKISH JOURNAL OF ELECTRICAL ENGINEERING & COMPUTER SCIENCES","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://doi.org/10.3906/elk-1803-71","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5039902721","display_name":"Osman Ceylan","orcid":"https://orcid.org/0000-0002-5056-4651"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Osman CEYLAN","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016108432","display_name":"H. Bulent Yagci","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"H. B\u00fclent YA\u011eCI","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5007648588","display_name":"Sel\u00e7uk Paker","orcid":"https://orcid.org/0000-0002-1769-1835"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sel\u00e7uk PAKER","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.6547,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.7182336,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"26","issue":"5","first_page":"2327","last_page":"2334"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9926999807357788,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9926999807357788,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.963699996471405,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9345999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.830260157585144},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.6919018626213074},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5646933317184448},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.462001770734787},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4541844129562378},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.44629108905792236},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.4434587359428406},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4171868562698364},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.34414246678352356},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.32828837633132935},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3213917911052704},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.20138052105903625},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19715023040771484},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.12660405039787292},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.05541685223579407}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.830260157585144},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.6919018626213074},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5646933317184448},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.462001770734787},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4541844129562378},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.44629108905792236},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.4434587359428406},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4171868562698364},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.34414246678352356},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.32828837633132935},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3213917911052704},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.20138052105903625},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19715023040771484},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12660405039787292},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.05541685223579407},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.3906/elk-1803-71","is_oa":true,"landing_page_url":"https://doi.org/10.3906/elk-1803-71","pdf_url":"https://doi.org/10.3906/elk-1803-71","source":{"id":"https://openalex.org/S32837994","display_name":"TURKISH JOURNAL OF ELECTRICAL ENGINEERING & COMPUTER SCIENCES","issn_l":"1300-0632","issn":["1300-0632","1303-6203"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310318422","host_organization_name":"Scientific and Technological Research Council of Turkey (TUBITAK)","host_organization_lineage":["https://openalex.org/P4310318422"],"host_organization_lineage_names":["Scientific and Technological Research Council of Turkey (TUBITAK)"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"TURKISH JOURNAL OF ELECTRICAL ENGINEERING & COMPUTER SCIENCES","raw_type":"journal-article"},{"id":"pmh:oai:dergipark.org.tr:article/574376","is_oa":false,"landing_page_url":"https://dergipark.org.tr/tr/pub/tbtkelektrik/issue/45630/574376","pdf_url":null,"source":{"id":"https://openalex.org/S4306401840","display_name":"DergiPark (Istanbul University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I67581229","host_organization_name":"Istanbul University","host_organization_lineage":["https://openalex.org/I67581229"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"\\n                                                                    Volume: 26, Issue: 5\\n                                                                                                    2327-2334\\n                                                                \\n                            ","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:oai:polen.itu.edu.tr:11527/41508","is_oa":false,"landing_page_url":"https://hdl.handle.net/11527/41508","pdf_url":null,"source":{"id":"https://openalex.org/S4306400460","display_name":"Istanbul Technical University Academic Open Archive (Istanbul Technical University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I48912391","host_organization_name":"Istanbul Technical University","host_organization_lineage":["https://openalex.org/I48912391"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Article"}],"best_oa_location":{"id":"doi:10.3906/elk-1803-71","is_oa":true,"landing_page_url":"https://doi.org/10.3906/elk-1803-71","pdf_url":"https://doi.org/10.3906/elk-1803-71","source":{"id":"https://openalex.org/S32837994","display_name":"TURKISH JOURNAL OF ELECTRICAL ENGINEERING & COMPUTER SCIENCES","issn_l":"1300-0632","issn":["1300-0632","1303-6203"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310318422","host_organization_name":"Scientific and Technological Research Council of Turkey (TUBITAK)","host_organization_lineage":["https://openalex.org/P4310318422"],"host_organization_lineage_names":["Scientific and Technological Research Council of Turkey (TUBITAK)"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"TURKISH JOURNAL OF ELECTRICAL ENGINEERING & COMPUTER SCIENCES","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8700000047683716,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320334900","display_name":"Japan Aerospace Exploration Agency","ror":"https://ror.org/059yhyy33"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W2559825181","https://openalex.org/W3209950509","https://openalex.org/W1975307200","https://openalex.org/W4377089489","https://openalex.org/W4313611767","https://openalex.org/W3088454288","https://openalex.org/W2466508933","https://openalex.org/W4385217635","https://openalex.org/W2613044742"],"abstract_inverted_index":{"Class-F":[0,58,79,184],"type":[1,80],"amplification":[2,81],"stands":[3],"on":[4,146],"proper":[5],"termination":[6,21,56,76,86],"of":[7,22,54,87,93,154,165,199],"harmonics":[8,14,27,55,65],"such":[9],"as":[10],"short":[11,36,85],"for":[12,17,30,57,78,115,129],"even":[13],"and":[15,37,63,66,111,136,191],"open":[16,38],"odd":[18],"harmonics.":[19],"Moreover,":[20],"only":[23],"the":[24,49,91,94,100,104,139,162,172,179,197],"first":[25],"few":[26],"is":[28,43,113,134,157,175,210],"practical":[29],"high-frequency":[31,117],"circuits,":[32],"while":[33,171],"obtaining":[34],"satisfactory":[35],"terminations":[39],"at":[40,168,178],"high":[41,126],"frequencies":[42],"a":[44,52,108,130,150],"challenging":[45],"design":[46],"issue.":[47],"In":[48,98],"present":[50],"study,":[51],"topology":[53,101],"load":[59],"network":[60],"with":[61,103,138],"2nd":[62,88],"3rd":[64],"its":[67,121],"relative":[68],"analytical":[69],"analysis":[70],"are":[71],"presented.":[72],"The":[73,159,183,205],"proposed":[74,140],"output":[75,173,194],"structure":[77],"provides":[82],"an":[83],"improved":[84],"harmonic;":[89],"therefore,":[90],"efficiency":[92],"power":[95,127,174,195,208],"amplifier":[96,128],"increases.":[97],"addition,":[99],"implemented":[102],"microstrip":[105],"lines":[106],"has":[107,186],"tunable":[109],"structure,":[110],"it":[112],"suitable":[114],"very":[116],"applications":[118],"due":[119],"to":[120],"straightforward":[122],"architecture.":[123],"An":[124],"X-Band":[125],"small":[131],"satellite":[132],"transmitter":[133],"designed":[135],"fabricated":[137],"method.":[141],"A":[142],"0.25":[143],"${\\\\mu}m$":[144],"GaN":[145],"SiC":[147],"HEMT":[148],"having":[149],"total":[151],"gate":[152],"width":[153],"1.25":[155],"$mm$":[156],"used.":[158],"PA":[160,185],"achieves":[161],"peak":[163],"$PAE$":[164,190],"55":[166],"%":[167],"8.1":[169],"$GHz$":[170],"36":[176],"$dBm$":[177,193],"$3-dB$":[180],"compression":[181],"point.":[182],"higher":[187],"than":[188],"50\\\\%":[189],"35.5":[192],"in":[196],"band":[198],"$7.9":[200],"-":[201],"8.2":[202],"\\\\":[203],"GHz$.":[204],"measured":[206],"linear":[207],"gain":[209],"16.2":[211],"$dB$.":[212]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}