{"id":"https://openalex.org/W4389286191","doi":"https://doi.org/10.3390/s23239586","title":"N-Channel MOSFET Reliability Issue Induced by Visible/Near-Infrared Photons in Image Sensors","display_name":"N-Channel MOSFET Reliability Issue Induced by Visible/Near-Infrared Photons in Image Sensors","publication_year":2023,"publication_date":"2023-12-03","ids":{"openalex":"https://openalex.org/W4389286191","doi":"https://doi.org/10.3390/s23239586","pmid":"https://pubmed.ncbi.nlm.nih.gov/38067958"},"language":"en","primary_location":{"id":"doi:10.3390/s23239586","is_oa":true,"landing_page_url":"http://dx.doi.org/10.3390/s23239586","pdf_url":"https://www.mdpi.com/1424-8220/23/23/9586/pdf?version=1701588248","source":{"id":"https://openalex.org/S101949793","display_name":"Sensors","issn_l":"1424-8220","issn":["1424-8220"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310310987","host_organization_name":"Multidisciplinary Digital Publishing Institute","host_organization_lineage":["https://openalex.org/P4310310987"],"host_organization_lineage_names":["Multidisciplinary Digital Publishing Institute"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Sensors","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj","pubmed"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://www.mdpi.com/1424-8220/23/23/9586/pdf?version=1701588248","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101954768","display_name":"Chun-Hsien Liu","orcid":"https://orcid.org/0009-0006-2841-3503"},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Chun-Hsien Liu","raw_affiliation_strings":["Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan"],"raw_orcid":"https://orcid.org/0009-0006-2841-3503","affiliations":[{"raw_affiliation_string":"Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5082031393","display_name":"Sheng\u2010Di Lin","orcid":"https://orcid.org/0000-0002-4944-9111"},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Sheng-Di Lin","raw_affiliation_strings":["Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5101954768"],"corresponding_institution_ids":["https://openalex.org/I148366613"],"apc_list":{"value":2400,"currency":"CHF","value_usd":2598},"apc_paid":{"value":2400,"currency":"CHF","value_usd":2598},"fwci":0.0,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":{"value":0.12666667,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"23","issue":"23","first_page":"9586","last_page":"9586"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12153","display_name":"Advanced Optical Sensing Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3105","display_name":"Instrumentation"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12153","display_name":"Advanced Optical Sensing Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3105","display_name":"Instrumentation"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.9941999912261963,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6731528639793396},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6514791250228882},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5709766745567322},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.549278199672699},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5094950795173645},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4762294888496399},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.4709174335002899},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.4684982895851135},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.41770702600479126},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3995853662490845},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.27143043279647827},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2476496696472168},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1640326976776123}],"concepts":[{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6731528639793396},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6514791250228882},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5709766745567322},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.549278199672699},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5094950795173645},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4762294888496399},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4709174335002899},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.4684982895851135},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.41770702600479126},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3995853662490845},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.27143043279647827},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2476496696472168},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1640326976776123},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0}],"mesh":[],"locations_count":5,"locations":[{"id":"doi:10.3390/s23239586","is_oa":true,"landing_page_url":"http://dx.doi.org/10.3390/s23239586","pdf_url":"https://www.mdpi.com/1424-8220/23/23/9586/pdf?version=1701588248","source":{"id":"https://openalex.org/S101949793","display_name":"Sensors","issn_l":"1424-8220","issn":["1424-8220"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310310987","host_organization_name":"Multidisciplinary Digital Publishing Institute","host_organization_lineage":["https://openalex.org/P4310310987"],"host_organization_lineage_names":["Multidisciplinary Digital Publishing Institute"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Sensors","raw_type":"journal-article"},{"id":"pmid:38067958","is_oa":false,"landing_page_url":"https://pubmed.ncbi.nlm.nih.gov/38067958","pdf_url":null,"source":{"id":"https://openalex.org/S4306525036","display_name":"PubMed","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I1299303238","host_organization_name":"National Institutes of Health","host_organization_lineage":["https://openalex.org/I1299303238"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Sensors (Basel, Switzerland)","raw_type":null},{"id":"pmh:oai:pubmedcentral.nih.gov:10708812","is_oa":true,"landing_page_url":"https://www.ncbi.nlm.nih.gov/pmc/articles/10708812","pdf_url":"https://pmc.ncbi.nlm.nih.gov/articles/PMC10708812/pdf/sensors-23-09586.pdf","source":{"id":"https://openalex.org/S2764455111","display_name":"PubMed Central","issn_l":null,"issn":null,"is_oa":true,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I1299303238","host_organization_name":"National Institutes of Health","host_organization_lineage":["https://openalex.org/I1299303238"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Sensors (Basel)","raw_type":"Text"},{"id":"pmh:oai:doaj.org/article:94d4cb85306a42f59817064d5afe6d6a","is_oa":true,"landing_page_url":"https://doaj.org/article/94d4cb85306a42f59817064d5afe6d6a","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Sensors, Vol 23, Iss 23, p 9586 (2023)","raw_type":"article"},{"id":"pmh:oai:mdpi.com:/1424-8220/23/23/9586/","is_oa":true,"landing_page_url":"https://doi.org/10.3390/s23239586","pdf_url":null,"source":{"id":"https://openalex.org/S4306400947","display_name":"MDPI (MDPI AG)","issn_l":null,"issn":null,"is_oa":true,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4210097602","host_organization_name":"Multidisciplinary Digital Publishing Institute (Switzerland)","host_organization_lineage":["https://openalex.org/I4210097602"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Sensors","raw_type":"Text"}],"best_oa_location":{"id":"doi:10.3390/s23239586","is_oa":true,"landing_page_url":"http://dx.doi.org/10.3390/s23239586","pdf_url":"https://www.mdpi.com/1424-8220/23/23/9586/pdf?version=1701588248","source":{"id":"https://openalex.org/S101949793","display_name":"Sensors","issn_l":"1424-8220","issn":["1424-8220"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310310987","host_organization_name":"Multidisciplinary Digital Publishing Institute","host_organization_lineage":["https://openalex.org/P4310310987"],"host_organization_lineage_names":["Multidisciplinary Digital Publishing Institute"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Sensors","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8999999761581421}],"awards":[],"funders":[{"id":"https://openalex.org/F4320329659","display_name":"Thailand Science Research and Innovation","ror":null},{"id":"https://openalex.org/F4320331164","display_name":"National Science and Technology Council","ror":"https://ror.org/00wnb9798"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4389286191.pdf","grobid_xml":"https://content.openalex.org/works/W4389286191.grobid-xml"},"referenced_works_count":11,"referenced_works":["https://openalex.org/W2008338103","https://openalex.org/W2014058709","https://openalex.org/W2029570848","https://openalex.org/W2089852019","https://openalex.org/W2539383768","https://openalex.org/W2543112180","https://openalex.org/W2758264729","https://openalex.org/W2784449764","https://openalex.org/W3172982754","https://openalex.org/W4283801280","https://openalex.org/W6797287371"],"related_works":["https://openalex.org/W4254968926","https://openalex.org/W2542162669","https://openalex.org/W1977042749","https://openalex.org/W2606572865","https://openalex.org/W2121451436","https://openalex.org/W2078152308","https://openalex.org/W2115248544","https://openalex.org/W2389800961","https://openalex.org/W1608296848","https://openalex.org/W2049062674"],"abstract_inverted_index":{"Image":[0],"sensors":[1],"such":[2],"as":[3,64],"single-photon":[4],"avalanched":[5],"diode":[6],"(SPAD)":[7],"arrays":[8],"typically":[9],"adopt":[10],"in-pixel":[11],"quenching":[12],"and":[13,16,91],"readout":[14,20],"circuits,":[15],"the":[17,59,118,127],"under-illumination":[18],"first-stage":[19],"circuits":[21],"often":[22],"employs":[23],"high-threshold":[24,39],"input/output":[25],"(I/O)":[26],"or":[27,124],"thick-oxide":[28],"metal-oxide-semiconductor":[29],"field-effect":[30],"transistors":[31,104],"(MOSFETs).":[32],"We":[33],"have":[34,54],"observed":[35],"reliability":[36,107],"issues":[37],"with":[38],"n-channel":[40],"MOSFETs":[41],"when":[42],"they":[43],"are":[44],"exposed":[45],"to":[46,57,83],"strong":[47],"visible":[48],"light.":[49],"The":[50,70,96],"specific":[51],"stress":[52],"conditions":[53,123],"been":[55],"applied":[56],"observe":[58],"drain":[60],"current":[61,89,94],"(Id)":[62],"variations":[63],"a":[65],"function":[66],"of":[67],"gate":[68],"voltage.":[69],"experimental":[71],"results":[72],"indicate":[73],"that":[74],"photo-induced":[75],"hot":[76],"electrons":[77],"generate":[78],"interface":[79],"trap":[80],"states,":[81],"leading":[82],"Id":[84],"degradation":[85],"including":[86],"increased":[87,97],"off-state":[88],"(Ioff)":[90],"decreased":[92],"on-state":[93],"(Ion).":[95],"Ioff":[98],"further":[99],"activates":[100],"parasitic":[101],"bipolar":[102],"junction":[103],"(BJT).":[105],"This":[106],"issue":[108],"can":[109],"be":[110],"avoided":[111],"by":[112,125],"forming":[113],"an":[114],"inversion":[115],"layer":[116],"in":[117],"channel":[119],"under":[120],"appropriate":[121],"bias":[122],"reducing":[126],"incident":[128],"photon":[129],"energy.":[130]},"counts_by_year":[],"updated_date":"2026-05-21T06:26:12.895304","created_date":"2025-10-10T00:00:00"}