{"id":"https://openalex.org/W2138870611","doi":"https://doi.org/10.3390/s131217265","title":"Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference","display_name":"Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference","publication_year":2013,"publication_date":"2013-12-13","ids":{"openalex":"https://openalex.org/W2138870611","doi":"https://doi.org/10.3390/s131217265","mag":"2138870611","pmid":"https://pubmed.ncbi.nlm.nih.gov/24351635"},"language":"en","primary_location":{"id":"doi:10.3390/s131217265","is_oa":true,"landing_page_url":"https://doi.org/10.3390/s131217265","pdf_url":"https://www.mdpi.com/1424-8220/13/12/17265/pdf?version=1403340945","source":{"id":"https://openalex.org/S101949793","display_name":"Sensors","issn_l":"1424-8220","issn":["1424-8220"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310310987","host_organization_name":"Multidisciplinary Digital Publishing Institute","host_organization_lineage":["https://openalex.org/P4310310987"],"host_organization_lineage_names":["Multidisciplinary Digital Publishing Institute"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Sensors","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj","pubmed"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://www.mdpi.com/1424-8220/13/12/17265/pdf?version=1403340945","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5059846620","display_name":"El Hafed Boufouss","orcid":"https://orcid.org/0000-0002-0208-2615"},"institutions":[{"id":"https://openalex.org/I95674353","display_name":"UCLouvain","ror":"https://ror.org/02495e989","country_code":"BE","type":"education","lineage":["https://openalex.org/I95674353"]}],"countries":["BE"],"is_corresponding":true,"raw_author_name":"El Boufouss","raw_affiliation_strings":["ICTEAM Institute\u2014Electrical Engineering, Universit\u00e9 catholique de Louvain, Maxwell Building, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ICTEAM Institute\u2014Electrical Engineering, Universit\u00e9 catholique de Louvain, Maxwell Building, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium","institution_ids":["https://openalex.org/I95674353"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028890718","display_name":"Laurent A. Francis","orcid":"https://orcid.org/0000-0003-4683-3916"},"institutions":[{"id":"https://openalex.org/I95674353","display_name":"UCLouvain","ror":"https://ror.org/02495e989","country_code":"BE","type":"education","lineage":["https://openalex.org/I95674353"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Laurent Francis","raw_affiliation_strings":["ICTEAM Institute\u2014Electrical Engineering, Universit\u00e9 catholique de Louvain, Maxwell Building, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium"],"raw_orcid":"https://orcid.org/0000-0003-4683-3916","affiliations":[{"raw_affiliation_string":"ICTEAM Institute\u2014Electrical Engineering, Universit\u00e9 catholique de Louvain, Maxwell Building, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium","institution_ids":["https://openalex.org/I95674353"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053011098","display_name":"Valeriya Kilchytska","orcid":"https://orcid.org/0000-0002-8540-3313"},"institutions":[{"id":"https://openalex.org/I95674353","display_name":"UCLouvain","ror":"https://ror.org/02495e989","country_code":"BE","type":"education","lineage":["https://openalex.org/I95674353"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Valeriya Kilchytska","raw_affiliation_strings":["ICTEAM Institute\u2014Electrical Engineering, Universit\u00e9 catholique de Louvain, Maxwell Building, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ICTEAM Institute\u2014Electrical Engineering, Universit\u00e9 catholique de Louvain, Maxwell Building, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium","institution_ids":["https://openalex.org/I95674353"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002746067","display_name":"Pierre G\u00e9rard","orcid":"https://orcid.org/0000-0003-0396-1432"},"institutions":[{"id":"https://openalex.org/I95674353","display_name":"UCLouvain","ror":"https://ror.org/02495e989","country_code":"BE","type":"education","lineage":["https://openalex.org/I95674353"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Pierre G\u00e9rard","raw_affiliation_strings":["ICTEAM Institute\u2014Electrical Engineering, Universit\u00e9 catholique de Louvain, Maxwell Building, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ICTEAM Institute\u2014Electrical Engineering, Universit\u00e9 catholique de Louvain, Maxwell Building, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium","institution_ids":["https://openalex.org/I95674353"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004776704","display_name":"Pascal Simon","orcid":null},"institutions":[{"id":"https://openalex.org/I95674353","display_name":"UCLouvain","ror":"https://ror.org/02495e989","country_code":"BE","type":"education","lineage":["https://openalex.org/I95674353"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Pascal Simon","raw_affiliation_strings":["ICTEAM Institute\u2014Electrical Engineering, Universit\u00e9 catholique de Louvain, Maxwell Building, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ICTEAM Institute\u2014Electrical Engineering, Universit\u00e9 catholique de Louvain, Maxwell Building, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium","institution_ids":["https://openalex.org/I95674353"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5064026729","display_name":"Denis Flandre","orcid":"https://orcid.org/0000-0001-5298-5196"},"institutions":[{"id":"https://openalex.org/I95674353","display_name":"UCLouvain","ror":"https://ror.org/02495e989","country_code":"BE","type":"education","lineage":["https://openalex.org/I95674353"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Denis Flandre","raw_affiliation_strings":["ICTEAM Institute\u2014Electrical Engineering, Universit\u00e9 catholique de Louvain, Maxwell Building, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ICTEAM Institute\u2014Electrical Engineering, Universit\u00e9 catholique de Louvain, Maxwell Building, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium","institution_ids":["https://openalex.org/I95674353"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5059846620"],"corresponding_institution_ids":["https://openalex.org/I95674353"],"apc_list":{"value":2400,"currency":"CHF","value_usd":2598},"apc_paid":{"value":2400,"currency":"CHF","value_usd":2598},"fwci":1.1999,"has_fulltext":true,"cited_by_count":11,"citation_normalized_percentile":{"value":0.82506901,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"13","issue":"12","first_page":"17265","last_page":"17280"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.7052044868469238},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.689238429069519},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6743793487548828},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.6680293083190918},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5940141081809998},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.5509483218193054},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5478940606117249},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5139769911766052},{"id":"https://openalex.org/keywords/absorbed-dose","display_name":"Absorbed dose","score":0.4619174003601074},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.4536702632904053},{"id":"https://openalex.org/keywords/ionizing-radiation","display_name":"Ionizing radiation","score":0.453485906124115},{"id":"https://openalex.org/keywords/atmospheric-temperature-range","display_name":"Atmospheric temperature range","score":0.4460234045982361},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.42891281843185425},{"id":"https://openalex.org/keywords/radiation","display_name":"Radiation","score":0.42736685276031494},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.41280707716941833},{"id":"https://openalex.org/keywords/irradiation","display_name":"Irradiation","score":0.34904223680496216},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.3378477692604065},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.18111607432365417},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.16025099158287048},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.10392159223556519}],"concepts":[{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.7052044868469238},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.689238429069519},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6743793487548828},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.6680293083190918},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5940141081809998},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.5509483218193054},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5478940606117249},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5139769911766052},{"id":"https://openalex.org/C151337348","wikidata":"https://www.wikidata.org/wiki/Q215313","display_name":"Absorbed dose","level":3,"score":0.4619174003601074},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.4536702632904053},{"id":"https://openalex.org/C18231593","wikidata":"https://www.wikidata.org/wiki/Q186161","display_name":"Ionizing radiation","level":3,"score":0.453485906124115},{"id":"https://openalex.org/C39353612","wikidata":"https://www.wikidata.org/wiki/Q5283759","display_name":"Atmospheric temperature range","level":2,"score":0.4460234045982361},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.42891281843185425},{"id":"https://openalex.org/C153385146","wikidata":"https://www.wikidata.org/wiki/Q18335","display_name":"Radiation","level":2,"score":0.42736685276031494},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.41280707716941833},{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.34904223680496216},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.3378477692604065},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.18111607432365417},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.16025099158287048},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10392159223556519},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.0}],"mesh":[],"locations_count":5,"locations":[{"id":"doi:10.3390/s131217265","is_oa":true,"landing_page_url":"https://doi.org/10.3390/s131217265","pdf_url":"https://www.mdpi.com/1424-8220/13/12/17265/pdf?version=1403340945","source":{"id":"https://openalex.org/S101949793","display_name":"Sensors","issn_l":"1424-8220","issn":["1424-8220"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310310987","host_organization_name":"Multidisciplinary Digital Publishing Institute","host_organization_lineage":["https://openalex.org/P4310310987"],"host_organization_lineage_names":["Multidisciplinary Digital Publishing Institute"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Sensors","raw_type":"journal-article"},{"id":"pmid:24351635","is_oa":false,"landing_page_url":"https://pubmed.ncbi.nlm.nih.gov/24351635","pdf_url":null,"source":{"id":"https://openalex.org/S4306525036","display_name":"PubMed","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I1299303238","host_organization_name":"National Institutes of Health","host_organization_lineage":["https://openalex.org/I1299303238"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Sensors (Basel, Switzerland)","raw_type":null},{"id":"pmh:oai:dial.uclouvain.be:boreal:135970","is_oa":true,"landing_page_url":"http://hdl.handle.net/2078.1/135970","pdf_url":null,"source":{"id":"https://openalex.org/S4306401974","display_name":"DIAL (Catholic University of Leuven)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I99464096","host_organization_name":"KU Leuven","host_organization_lineage":["https://openalex.org/I99464096"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Sensors, Vol. 13, no. 12, p. 17265-17280 (13/12/2013)","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:oai:doaj.org/article:5ebb8a4f1003413aae988f13b4a80cc6","is_oa":true,"landing_page_url":"https://doaj.org/article/5ebb8a4f1003413aae988f13b4a80cc6","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Sensors, Vol 13, Iss 12, Pp 17265-17280 (2013)","raw_type":"article"},{"id":"pmh:oai:europepmc.org:2881230","is_oa":true,"landing_page_url":"https://www.ncbi.nlm.nih.gov/pmc/articles/3892812","pdf_url":null,"source":{"id":"https://openalex.org/S4306400806","display_name":"Europe PMC (PubMed Central)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I1303153112","host_organization_name":"European Bioinformatics Institute","host_organization_lineage":["https://openalex.org/I1303153112"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Text"}],"best_oa_location":{"id":"doi:10.3390/s131217265","is_oa":true,"landing_page_url":"https://doi.org/10.3390/s131217265","pdf_url":"https://www.mdpi.com/1424-8220/13/12/17265/pdf?version=1403340945","source":{"id":"https://openalex.org/S101949793","display_name":"Sensors","issn_l":"1424-8220","issn":["1424-8220"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310310987","host_organization_name":"Multidisciplinary Digital Publishing Institute","host_organization_lineage":["https://openalex.org/P4310310987"],"host_organization_lineage_names":["Multidisciplinary Digital Publishing Institute"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Sensors","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.6899999976158142}],"awards":[],"funders":[{"id":"https://openalex.org/F4320321390","display_name":"Fonds De La Recherche Scientifique - FNRS","ror":"https://ror.org/03q83t159"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2138870611.pdf","grobid_xml":"https://content.openalex.org/works/W2138870611.grobid-xml"},"referenced_works_count":17,"referenced_works":["https://openalex.org/W1518320197","https://openalex.org/W1566916904","https://openalex.org/W1703234190","https://openalex.org/W1801224446","https://openalex.org/W2002139288","https://openalex.org/W2029778784","https://openalex.org/W2038172248","https://openalex.org/W2052134448","https://openalex.org/W2059214545","https://openalex.org/W2072368463","https://openalex.org/W2123644121","https://openalex.org/W2132334378","https://openalex.org/W2147301393","https://openalex.org/W2164546195","https://openalex.org/W2171702041","https://openalex.org/W2564936224","https://openalex.org/W4299933435"],"related_works":["https://openalex.org/W2545707786","https://openalex.org/W2009852498","https://openalex.org/W3004587385","https://openalex.org/W1991521745","https://openalex.org/W2109147260","https://openalex.org/W2786811717","https://openalex.org/W4220771873","https://openalex.org/W2069364674","https://openalex.org/W2062767191","https://openalex.org/W2117738807"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"an":[3],"ultra-low":[4],"power":[5,155,217],"CMOS":[6],"voltage":[7,33,129,161,197],"reference":[8,34,128],"circuit":[9,97],"which":[10],"is":[11,35,47,162,248],"robust":[12],"under":[13,209],"biomedical":[14],"extreme":[15],"conditions,":[16],"such":[17,30,88,196],"as":[18,89],"high":[19,22,103,175,189],"temperature":[20,66,135,168,176,194,220],"and":[21,46,71,91,120,136,169,193,216,221,238],"total":[23,104,190,243],"ionized":[24],"dose":[25,192,223],"(TID)":[26],"radiation.":[27],"To":[28,180],"achieve":[29],"performances,":[31],"the":[32,52,56,65,127,133,147,182,186,199,203,231],"designed":[36],"in":[37,51,228],"a":[38,174],"suitable":[39],"130":[40],"nm":[41],"Silicon-on-Insulator":[42],"(SOI)":[43],"industrial":[44],"technology":[45],"optimized":[48],"to":[49,77,102],"work":[50],"subthreshold":[53],"regime":[54],"of":[55,68,126,146,150,177,188,202,214,230],"transistors.":[57],"The":[58,95,123,153,212,242],"design":[59],"simulations":[60],"have":[61],"been":[62,99],"performed":[63,111],"over":[64],"range":[67],"-40-200":[69],"\u00b0C":[70,119],"for":[72],"different":[73,114,210,232],"process":[74],"corners.":[75],"Robustness":[76],"radiation":[78,105,138,222],"was":[79],"simulated":[80],"using":[81],"custom":[82],"model":[83],"parameters":[84],"including":[85,246],"TID":[86],"effects,":[87],"mobilities":[90],"threshold":[92,200],"voltages":[93,201],"degradation.":[94],"proposed":[96],"has":[98],"tested":[100],"up":[101],"dose,":[106],"i.e.,":[107],"1":[108],"Mrad":[109],"(Si)":[110],"at":[112,157,166,173],"three":[113],"temperatures":[115],"(room":[116],"temperature,":[117],"100":[118],"200":[121,178],"\u00b0C).":[122],"maximum":[124],"drift":[125],"V(REF)":[130,215],"depends":[131],"on":[132,137,195],"considered":[134],"dose;":[139],"however,":[140],"it":[141],"remains":[142],"lower":[143],"than":[144,250],"10%":[145],"mean":[148],"value":[149],"1.5":[151],"V.":[152],"typical":[154],"dissipation":[156],"2.5":[158],"V":[159],"supply":[160],"about":[163],"20":[164],"\u03bcW":[165,172],"room":[167],"only":[170],"75":[171],"\u00b0C.":[179],"understand":[181],"effects":[183],"caused":[184],"by":[185],"combination":[187],"ionizing":[191],"reference,":[198],"used":[204],"SOI":[205],"MOSFETs":[206],"were":[207],"extracted":[208],"conditions.":[211],"evolution":[213],"consumption":[218],"with":[219],"can":[224],"then":[225],"be":[226],"explained":[227],"terms":[229],"balance":[233],"between":[234],"fixed":[235],"oxide":[236],"charge":[237],"interface":[239],"states":[240],"build-up.":[241],"occupied":[244],"area":[245],"pad-ring":[247],"less":[249],"0.09":[251],"mm2.":[252]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":3},{"year":2014,"cited_by_count":1}],"updated_date":"2026-05-21T06:26:12.895304","created_date":"2025-10-10T00:00:00"}