{"id":"https://openalex.org/W4385192578","doi":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185248","title":"Highly Reliable and Manufacturable MRAM embedded in 14nm FinFET node","display_name":"Highly Reliable and Manufacturable MRAM embedded in 14nm FinFET node","publication_year":2023,"publication_date":"2023-06-11","ids":{"openalex":"https://openalex.org/W4385192578","doi":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185248"},"language":"en","primary_location":{"id":"doi:10.23919/vlsitechnologyandcir57934.2023.10185248","is_oa":false,"landing_page_url":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185248","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5006823975","display_name":"Seung Hwan Ko","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"S. Ko","raw_affiliation_strings":["R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea"],"affiliations":[{"raw_affiliation_string":"R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103146406","display_name":"J.H. Park","orcid":"https://orcid.org/0000-0002-1022-5196"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"J. H. Park","raw_affiliation_strings":["R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea"],"affiliations":[{"raw_affiliation_string":"R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111701944","display_name":"J. B\u0105k","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"J. H. Bak","raw_affiliation_strings":["R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea"],"affiliations":[{"raw_affiliation_string":"R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085750592","display_name":"Hoeryong Jung","orcid":"https://orcid.org/0009-0003-9929-3105"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"H. Jung","raw_affiliation_strings":["R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea"],"affiliations":[{"raw_affiliation_string":"R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101666043","display_name":"Jaehoon Shim","orcid":"https://orcid.org/0009-0008-9299-2663"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"J. Shim","raw_affiliation_strings":["R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea"],"affiliations":[{"raw_affiliation_string":"R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060938589","display_name":"D. S. Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"D. S. Kim","raw_affiliation_strings":["R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea"],"affiliations":[{"raw_affiliation_string":"R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084536077","display_name":"Woo\u2010Hyun Lim","orcid":"https://orcid.org/0000-0001-9298-8500"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"W. Lim","raw_affiliation_strings":["R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea"],"affiliations":[{"raw_affiliation_string":"R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112807486","display_name":"D.-E. Jeong","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"D.-E. Jeong","raw_affiliation_strings":["R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea"],"affiliations":[{"raw_affiliation_string":"R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104831728","display_name":"J. H. Lee","orcid":"https://orcid.org/0009-0004-9156-5724"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"J. H. Lee","raw_affiliation_strings":["R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea"],"affiliations":[{"raw_affiliation_string":"R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031483606","display_name":"Kyoobin Lee","orcid":"https://orcid.org/0000-0003-4299-4923"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"K. Lee","raw_affiliation_strings":["Foundry Business, Samsung Electronics Co.,Giheung,Korea","R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea"],"affiliations":[{"raw_affiliation_string":"Foundry Business, Samsung Electronics Co.,Giheung,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086486018","display_name":"Jae-Hyun Park","orcid":"https://orcid.org/0000-0003-2616-9907"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"J.-H. Park","raw_affiliation_strings":["R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea"],"affiliations":[{"raw_affiliation_string":"R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039592610","display_name":"Y. Kim","orcid":"https://orcid.org/0000-0003-1826-6950"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Y. Kim","raw_affiliation_strings":["R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea"],"affiliations":[{"raw_affiliation_string":"R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111990986","display_name":"C. Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"C. Kim","raw_affiliation_strings":["R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea"],"affiliations":[{"raw_affiliation_string":"R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103698521","display_name":"J. H. Jeong","orcid":"https://orcid.org/0009-0002-5670-2653"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"J. H. Jeong","raw_affiliation_strings":["R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea"],"affiliations":[{"raw_affiliation_string":"R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005327028","display_name":"Chang Young Lee","orcid":"https://orcid.org/0000-0002-2757-8019"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"C. Y. Lee","raw_affiliation_strings":["Innovation Center, Samsung Electronics Co.,Hwasung,Korea","Innovation Center, Samsung Electronics Co., Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Innovation Center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Innovation Center, Samsung Electronics Co., Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103254760","display_name":"S. H. Han","orcid":"https://orcid.org/0009-0002-8830-4799"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"S. H. Han","raw_affiliation_strings":["Foundry Business, Samsung Electronics Co.,Giheung,Korea","Foundry Business, Samsung Electronics Co., Giheung, Korea"],"affiliations":[{"raw_affiliation_string":"Foundry Business, Samsung Electronics Co.,Giheung,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Foundry Business, Samsung Electronics Co., Giheung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110666730","display_name":"Yongsung Ji","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Y. Ji","raw_affiliation_strings":["Foundry Business, Samsung Electronics Co.,Giheung,Korea","Foundry Business, Samsung Electronics Co., Giheung, Korea"],"affiliations":[{"raw_affiliation_string":"Foundry Business, Samsung Electronics Co.,Giheung,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Foundry Business, Samsung Electronics Co., Giheung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108708739","display_name":"S. H. Hwang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"S. H. Hwang","raw_affiliation_strings":["Foundry Business, Samsung Electronics Co.,Giheung,Korea","Foundry Business, Samsung Electronics Co., Giheung, Korea"],"affiliations":[{"raw_affiliation_string":"Foundry Business, Samsung Electronics Co.,Giheung,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Foundry Business, Samsung Electronics Co., Giheung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101399038","display_name":"Hong\u2010Jae Shin","orcid":"https://orcid.org/0000-0003-1080-4101"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"H. J. Shin","raw_affiliation_strings":["Foundry Business, Samsung Electronics Co.,Giheung,Korea","Foundry Business, Samsung Electronics Co., Giheung, Korea"],"affiliations":[{"raw_affiliation_string":"Foundry Business, Samsung Electronics Co.,Giheung,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Foundry Business, Samsung Electronics Co., Giheung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064102643","display_name":"Keun Lee","orcid":"https://orcid.org/0000-0002-0403-6348"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"K. Lee","raw_affiliation_strings":["Foundry Business, Samsung Electronics Co.,Giheung,Korea","R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","Foundry Business, Samsung Electronics Co., Giheung, Korea"],"affiliations":[{"raw_affiliation_string":"Foundry Business, Samsung Electronics Co.,Giheung,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Foundry Business, Samsung Electronics Co., Giheung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028628226","display_name":"Youjian Song","orcid":"https://orcid.org/0000-0002-5182-8620"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Y. J. Song","raw_affiliation_strings":["R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea"],"affiliations":[{"raw_affiliation_string":"R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111173234","display_name":"Y.G. Shin","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Y. G. Shin","raw_affiliation_strings":["R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea"],"affiliations":[{"raw_affiliation_string":"R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5032293524","display_name":"Jeehwan Song","orcid":"https://orcid.org/0000-0001-5532-5089"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"J. H. Song","raw_affiliation_strings":["R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea"],"affiliations":[{"raw_affiliation_string":"R&#x0026;D center, Samsung Electronics Co.,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":23,"corresponding_author_ids":["https://openalex.org/A5006823975"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":2.8406,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.91018578,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":97,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.993399977684021,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11222","display_name":"Magnetic Properties and Applications","score":0.9836999773979187,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.8662415146827698},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5828393697738647},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.5644780993461609},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.5151235461235046},{"id":"https://openalex.org/keywords/yield","display_name":"Yield (engineering)","score":0.48784422874450684},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.47873827815055847},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4425647556781769},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.42137905955314636},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.4190295934677124},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.39308103919029236},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.386848509311676},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3584429919719696},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3284735083580017},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2040705680847168},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20131990313529968},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.12515482306480408},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.08716920018196106},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.07553383708000183},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.07275807857513428}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.8662415146827698},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5828393697738647},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.5644780993461609},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.5151235461235046},{"id":"https://openalex.org/C134121241","wikidata":"https://www.wikidata.org/wiki/Q899301","display_name":"Yield (engineering)","level":2,"score":0.48784422874450684},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.47873827815055847},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4425647556781769},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.42137905955314636},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.4190295934677124},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.39308103919029236},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.386848509311676},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3584429919719696},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3284735083580017},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2040705680847168},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20131990313529968},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.12515482306480408},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.08716920018196106},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.07553383708000183},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.07275807857513428},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/vlsitechnologyandcir57934.2023.10185248","is_oa":false,"landing_page_url":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185248","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2899084033","https://openalex.org/W3110597662","https://openalex.org/W3020922712","https://openalex.org/W2566165147","https://openalex.org/W1607576514","https://openalex.org/W1979979239","https://openalex.org/W4281556502","https://openalex.org/W2335855052","https://openalex.org/W2077125610","https://openalex.org/W3179656953"],"abstract_inverted_index":{"We":[0],"demonstrated":[1],"highly":[2],"reliable":[3],"and":[4,32,41,53,70],"manufacturable":[5],"16Mb":[6],"magnetic":[7],"random":[8],"access":[9],"memory":[10],"(eMRAM)":[11],"embedded":[12],"in":[13],"14nm":[14],"FinFET":[15],"logic":[16],"by":[17],"achieving":[18],"high":[19],"yield":[20],"over":[21],"90%":[22],"at":[23,64],"an":[24],"operating":[25],"temperature":[26,67],"ranging":[27],"from":[28],"$-40^{\\circ}\\mathrm{C}$":[29],"to":[30],"$125^{\\circ}\\mathrm{C}$":[31],"passing":[33],"the":[34,59,65,72,85],"PKG":[35],"reliability":[36],"tests,":[37],"such":[38],"as":[39],"HTOL":[40],"endurance":[42],"10":[43],"<sup":[44],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[45],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">6</sup>":[46],"cycles.":[47],"In":[48],"addition,":[49],"for":[50,79],"automotive":[51],"application":[52],"further":[54],"scaling":[55],"down,":[56],"we":[57],"confirmed":[58],"function":[60],"of":[61,68,76],"eMRAM":[62,82],"macro":[63],"elevated":[66],"$160^{\\circ}\\mathrm{C}$,":[69],"achieved":[71],"low":[73],"short":[74],"fail":[75],"1ppm":[77],"level":[78],"sub":[80],"10nm":[81],"pitch":[83],"using":[84],"novel":[86],"patterning":[87],"technology,":[88],"respectively.":[89]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":8},{"year":2024,"cited_by_count":4}],"updated_date":"2026-03-29T08:15:47.926485","created_date":"2025-10-10T00:00:00"}