{"id":"https://openalex.org/W3184818812","doi":"https://doi.org/10.23919/vlsicircuits52068.2021.9492368","title":"5nm Low Power SRAM Featuring Dual-Rail Architecture with Voltage-Tracking Assist Circuit for 5G mobile application","display_name":"5nm Low Power SRAM Featuring Dual-Rail Architecture with Voltage-Tracking Assist Circuit for 5G mobile application","publication_year":2021,"publication_date":"2021-06-13","ids":{"openalex":"https://openalex.org/W3184818812","doi":"https://doi.org/10.23919/vlsicircuits52068.2021.9492368","mag":"3184818812"},"language":"en","primary_location":{"id":"doi:10.23919/vlsicircuits52068.2021.9492368","is_oa":false,"landing_page_url":"https://doi.org/10.23919/vlsicircuits52068.2021.9492368","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 Symposium on VLSI Circuits","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5063655416","display_name":"Sangyeop Baeck","orcid":"https://orcid.org/0000-0002-9106-5461"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Sangyeop Baeck","raw_affiliation_strings":["Samsung Electronics,Hwasung,Korea","Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033668218","display_name":"Inhak Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Inhak Lee","raw_affiliation_strings":["Samsung Electronics,Hwasung,Korea","Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041682981","display_name":"Hoyoung Tang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hoyoung Tang","raw_affiliation_strings":["Samsung Electronics,Hwasung,Korea","Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043976004","display_name":"Dong-Wook Seo","orcid":"https://orcid.org/0000-0001-9449-7772"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dongwook Seo","raw_affiliation_strings":["Samsung Electronics,Hwasung,Korea","Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102915526","display_name":"Jaeseung Choi","orcid":"https://orcid.org/0000-0003-3100-1324"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaeseung Choi","raw_affiliation_strings":["Samsung Electronics,Hwasung,Korea","Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025919348","display_name":"Taejoong Song","orcid":"https://orcid.org/0000-0003-2752-3138"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Taejoong Song","raw_affiliation_strings":["Samsung Electronics,Hwasung,Korea","Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111832882","display_name":"Jongwook Kye","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jongwook Kye","raw_affiliation_strings":["Samsung Electronics,Hwasung,Korea","Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwasung,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5063655416"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":0.1003,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.42052058,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.66911381483078},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5738955140113831},{"id":"https://openalex.org/keywords/offset","display_name":"Offset (computer science)","score":0.5231589078903198},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.48157763481140137},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4675748646259308},{"id":"https://openalex.org/keywords/dual","display_name":"Dual (grammatical number)","score":0.46700939536094666},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.46257641911506653},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.45412129163742065},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.4408688545227051},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.42856454849243164},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39633166790008545},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.34363508224487305},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.31667688488960266},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08254525065422058}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.66911381483078},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5738955140113831},{"id":"https://openalex.org/C175291020","wikidata":"https://www.wikidata.org/wiki/Q1156822","display_name":"Offset (computer science)","level":2,"score":0.5231589078903198},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.48157763481140137},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4675748646259308},{"id":"https://openalex.org/C2780980858","wikidata":"https://www.wikidata.org/wiki/Q110022","display_name":"Dual (grammatical number)","level":2,"score":0.46700939536094666},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.46257641911506653},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.45412129163742065},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.4408688545227051},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.42856454849243164},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39633166790008545},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.34363508224487305},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.31667688488960266},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08254525065422058},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C142362112","wikidata":"https://www.wikidata.org/wiki/Q735","display_name":"Art","level":0,"score":0.0},{"id":"https://openalex.org/C124952713","wikidata":"https://www.wikidata.org/wiki/Q8242","display_name":"Literature","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/vlsicircuits52068.2021.9492368","is_oa":false,"landing_page_url":"https://doi.org/10.23919/vlsicircuits52068.2021.9492368","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 Symposium on VLSI Circuits","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8600000143051147,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W3151633427","https://openalex.org/W2212894501","https://openalex.org/W2793465010","https://openalex.org/W3024050170","https://openalex.org/W4293253840","https://openalex.org/W4378977321","https://openalex.org/W2967161359","https://openalex.org/W2119025037","https://openalex.org/W2310488720","https://openalex.org/W2310834573"],"abstract_inverted_index":{"Voltage":[0],"Auto":[1],"Tracking":[2],"Cell":[3],"Power":[4],"Lowering":[5],"(VACPL)":[6],"Write":[7],"Assist":[8],"circuit":[9],"is":[10],"proposed":[11,56],"for":[12],"low-power":[13],"SRAM":[14],"with":[15,24,53],"dual-rail":[16],"architecture.":[17],"VACPL":[18,57],"adaptively":[19],"controls":[20],"the":[21,27],"cell":[22],"voltage":[23,31,52],"respect":[25],"to":[26,32],"dual":[28],"rail":[29],"offset":[30],"maximize":[33],"bitcell":[34],"write-ability.":[35],"A":[36],"5nm":[37,71],"EUV":[38],"FinFET":[39],"test":[40],"chip":[41],"demonstrates":[42],"210mV":[43],"VMIN":[44],"improvement":[45],"and":[46,58],"4.7x":[47],"larger":[48],"range":[49],"of":[50],"operating":[51],"VACPL.":[54],"The":[55],"VATA":[59],"achieves":[60],"95.2%":[61],"leakage":[62],"power":[63],"reduction":[64],"by":[65,68],"lowering":[66],"VDDC":[67],"400mV":[69],"in":[70],"5G":[72],"mobile":[73],"device.":[74]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}