{"id":"https://openalex.org/W4382562318","doi":"https://doi.org/10.23919/mipro57284.2023.10159745","title":"Tunneling Attenuation and Leakage Current in MoS<sub>2</sub> Nanoribbon MOSFETs","display_name":"Tunneling Attenuation and Leakage Current in MoS<sub>2</sub> Nanoribbon MOSFETs","publication_year":2023,"publication_date":"2023-05-22","ids":{"openalex":"https://openalex.org/W4382562318","doi":"https://doi.org/10.23919/mipro57284.2023.10159745"},"language":"en","primary_location":{"id":"doi:10.23919/mipro57284.2023.10159745","is_oa":false,"landing_page_url":"http://dx.doi.org/10.23919/mipro57284.2023.10159745","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 46th MIPRO ICT and Electronics Convention (MIPRO)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5068083548","display_name":"I. Prevari\u0107","orcid":null},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":true,"raw_author_name":"I. Prevari\u0107","raw_affiliation_strings":["University of Zagreb,Computational Nanoelectronics Group Micro and Nano Electronics Laboratory, Faculty of Electrical Engineering and Computing,Zagreb,Croatia,HR-10000"],"affiliations":[{"raw_affiliation_string":"University of Zagreb,Computational Nanoelectronics Group Micro and Nano Electronics Laboratory, Faculty of Electrical Engineering and Computing,Zagreb,Croatia,HR-10000","institution_ids":["https://openalex.org/I181343428"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087718462","display_name":"Milan Mati\u0107","orcid":null},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":false,"raw_author_name":"M. Mati\u0107","raw_affiliation_strings":["University of Zagreb,Computational Nanoelectronics Group Micro and Nano Electronics Laboratory, Faculty of Electrical Engineering and Computing,Zagreb,Croatia,HR-10000"],"affiliations":[{"raw_affiliation_string":"University of Zagreb,Computational Nanoelectronics Group Micro and Nano Electronics Laboratory, Faculty of Electrical Engineering and Computing,Zagreb,Croatia,HR-10000","institution_ids":["https://openalex.org/I181343428"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5003032308","display_name":"Mirko Poljak","orcid":"https://orcid.org/0000-0001-7075-6688"},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":false,"raw_author_name":"M. Poljak","raw_affiliation_strings":["University of Zagreb,Computational Nanoelectronics Group Micro and Nano Electronics Laboratory, Faculty of Electrical Engineering and Computing,Zagreb,Croatia,HR-10000"],"affiliations":[{"raw_affiliation_string":"University of Zagreb,Computational Nanoelectronics Group Micro and Nano Electronics Laboratory, Faculty of Electrical Engineering and Computing,Zagreb,Croatia,HR-10000","institution_ids":["https://openalex.org/I181343428"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5068083548"],"corresponding_institution_ids":["https://openalex.org/I181343428"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.05236447,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"163","last_page":"167"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12046","display_name":"MXene and MAX Phase Materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7096623182296753},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.7092626094818115},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6576870083808899},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.6523601412773132},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6311699151992798},{"id":"https://openalex.org/keywords/attenuation","display_name":"Attenuation","score":0.5841631889343262},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3730407953262329},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.34533119201660156},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.26860034465789795},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19269880652427673},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1286778450012207},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.127277672290802},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.05787137150764465}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7096623182296753},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.7092626094818115},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6576870083808899},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6523601412773132},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6311699151992798},{"id":"https://openalex.org/C184652730","wikidata":"https://www.wikidata.org/wiki/Q2357982","display_name":"Attenuation","level":2,"score":0.5841631889343262},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3730407953262329},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.34533119201660156},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.26860034465789795},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19269880652427673},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1286778450012207},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.127277672290802},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.05787137150764465},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/mipro57284.2023.10159745","is_oa":false,"landing_page_url":"http://dx.doi.org/10.23919/mipro57284.2023.10159745","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 46th MIPRO ICT and Electronics Convention (MIPRO)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.7400000095367432,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W625708420","https://openalex.org/W1981368803","https://openalex.org/W1997505539","https://openalex.org/W2021994802","https://openalex.org/W2025183960","https://openalex.org/W2036113194","https://openalex.org/W2039279334","https://openalex.org/W2045220474","https://openalex.org/W2053977990","https://openalex.org/W2098874598","https://openalex.org/W2120145199","https://openalex.org/W2154810399","https://openalex.org/W2164805481","https://openalex.org/W2428322214","https://openalex.org/W2552274731","https://openalex.org/W2982683571","https://openalex.org/W2983429008","https://openalex.org/W2990455438","https://openalex.org/W3005997041","https://openalex.org/W3121606166","https://openalex.org/W3166568372","https://openalex.org/W3203134847","https://openalex.org/W4283703480","https://openalex.org/W4296201469","https://openalex.org/W6661451959"],"related_works":["https://openalex.org/W2062605435","https://openalex.org/W2273182195","https://openalex.org/W2012959172","https://openalex.org/W1995707634","https://openalex.org/W2740243652","https://openalex.org/W2186374051","https://openalex.org/W2025480516","https://openalex.org/W2377963109","https://openalex.org/W4321379269","https://openalex.org/W1556217118"],"abstract_inverted_index":{"We":[0,42,70],"study":[1],"the":[2,33,38,44,48,62,74,78,99,103],"OFF-state":[3,49,79,104],"leakage":[4,50,80,105],"current":[5],"in":[6],"quasi-one-dimensional":[7],"MoS<inf>2</inf>":[8],"nanoribbon":[9],"(MoS<inf>2</inf>NR)":[10],"FETs":[11,88],"using":[12,61,73],"ab":[13],"initio":[14],"Hamiltonians":[15],"and":[16,32,55,65,112],"quantum":[17],"transport":[18],"simulations":[19],"based":[20],"on":[21],"Green\u2019s":[22],"functions.":[23],"Complex":[24],"band":[25],"structure":[26],"is":[27,40,106],"computed":[28],"for":[29,51,98,110,117],"these":[30],"devices":[31,101],"energy-dependent":[34],"tunneling":[35,45,91],"attenuation":[36,76,96],"inside":[37],"bandgap":[39],"obtained.":[41],"investigate":[43],"component":[46],"of":[47],"sub-20":[52],"nm":[53,57],"long":[54],"sub-3":[56],"wide":[58],"MoS<inf>2</inf>NR":[59,87],"FETs,":[60],"under-the-barrier":[63],"(UTB)":[64],"top-of-the-barrier":[66],"(ToB)":[67],"ballistic":[68],"models.":[69],"report":[71],"that":[72,85],"parabolically-approximated":[75],"overestimates":[77],"significantly.":[81],"Furthermore,":[82],"we":[83],"demonstrate":[84],"all":[86],"show":[89],"good":[90],"suppression":[92],"due":[93],"to":[94],"high":[95],"even":[97],"shortest":[100],"where":[102],"under":[107],"16.5":[108],"nA/\u03bcm":[109,116],"nFETs":[111],"lower":[113],"than":[114],"22":[115],"pFETs.":[118]},"counts_by_year":[],"updated_date":"2025-12-24T23:09:58.560324","created_date":"2025-10-10T00:00:00"}