{"id":"https://openalex.org/W3214197064","doi":"https://doi.org/10.23919/mipro52101.2021.9597145","title":"Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy","display_name":"Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy","publication_year":2021,"publication_date":"2021-09-27","ids":{"openalex":"https://openalex.org/W3214197064","doi":"https://doi.org/10.23919/mipro52101.2021.9597145","mag":"3214197064"},"language":"en","primary_location":{"id":"doi:10.23919/mipro52101.2021.9597145","is_oa":false,"landing_page_url":"https://doi.org/10.23919/mipro52101.2021.9597145","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5025633006","display_name":"Eric Sigle","orcid":null},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"E. Sigle","raw_affiliation_strings":["Institute for Semiconductor Engineering (IHT), University of Stuttgart,Stuttgart,Germany,70569","Institute for Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Semiconductor Engineering (IHT), University of Stuttgart,Stuttgart,Germany,70569","institution_ids":["https://openalex.org/I100066346"]},{"raw_affiliation_string":"Institute for Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I100066346"]}]},{"author_position":"middle","author":{"id":null,"display_name":"D. Wei\u00dfhaupt","orcid":null},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"D. Wei\u00dfhaupt","raw_affiliation_strings":["Institute for Semiconductor Engineering (IHT), University of Stuttgart,Stuttgart,Germany,70569","Institute for Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Semiconductor Engineering (IHT), University of Stuttgart,Stuttgart,Germany,70569","institution_ids":["https://openalex.org/I100066346"]},{"raw_affiliation_string":"Institute for Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I100066346"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035421149","display_name":"Michael Oehme","orcid":"https://orcid.org/0000-0002-1637-1338"},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"M. Oehme","raw_affiliation_strings":["Institute for Semiconductor Engineering (IHT), University of Stuttgart,Stuttgart,Germany,70569","Institute for Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Semiconductor Engineering (IHT), University of Stuttgart,Stuttgart,Germany,70569","institution_ids":["https://openalex.org/I100066346"]},{"raw_affiliation_string":"Institute for Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I100066346"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041091576","display_name":"Hannes S. Funk","orcid":"https://orcid.org/0000-0001-8485-2400"},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"H. S. Funk","raw_affiliation_strings":["Institute for Semiconductor Engineering (IHT), University of Stuttgart,Stuttgart,Germany,70569","Institute for Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Semiconductor Engineering (IHT), University of Stuttgart,Stuttgart,Germany,70569","institution_ids":["https://openalex.org/I100066346"]},{"raw_affiliation_string":"Institute for Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I100066346"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007604744","display_name":"Daniel Schwarz","orcid":"https://orcid.org/0000-0003-2702-4697"},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"D. Schwarz","raw_affiliation_strings":["Institute for Semiconductor Engineering (IHT), University of Stuttgart,Stuttgart,Germany,70569","Institute for Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Semiconductor Engineering (IHT), University of Stuttgart,Stuttgart,Germany,70569","institution_ids":["https://openalex.org/I100066346"]},{"raw_affiliation_string":"Institute for Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I100066346"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017062259","display_name":"Fritz Berkmann","orcid":"https://orcid.org/0000-0002-4930-6233"},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"F. Berkmann","raw_affiliation_strings":["Institute for Semiconductor Engineering (IHT), University of Stuttgart,Stuttgart,Germany,70569","Institute for Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Semiconductor Engineering (IHT), University of Stuttgart,Stuttgart,Germany,70569","institution_ids":["https://openalex.org/I100066346"]},{"raw_affiliation_string":"Institute for Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I100066346"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5080290215","display_name":"J\u00f6rg Schulze","orcid":"https://orcid.org/0000-0003-3621-7888"},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"J. Schulze","raw_affiliation_strings":["Institute for Semiconductor Engineering (IHT), University of Stuttgart,Stuttgart,Germany,70569","Institute for Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Semiconductor Engineering (IHT), University of Stuttgart,Stuttgart,Germany,70569","institution_ids":["https://openalex.org/I100066346"]},{"raw_affiliation_string":"Institute for Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I100066346"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I100066346"],"apc_list":null,"apc_paid":null,"fwci":1.221,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.76734759,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"40","last_page":"44"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/molecular-beam-epitaxy","display_name":"Molecular beam epitaxy","score":0.6888324022293091},{"id":"https://openalex.org/keywords/annealing","display_name":"Annealing (glass)","score":0.4960530698299408},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.47419577836990356},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.45981889963150024},{"id":"https://openalex.org/keywords/germanium","display_name":"Germanium","score":0.44968101382255554},{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.4199545681476593},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3964247703552246},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3799055516719818},{"id":"https://openalex.org/keywords/crystallography","display_name":"Crystallography","score":0.37402164936065674},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.337502658367157},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2635875642299652},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.24638119339942932},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.21573114395141602},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.13531014323234558},{"id":"https://openalex.org/keywords/biology","display_name":"Biology","score":0.08866459131240845}],"concepts":[{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.6888324022293091},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.4960530698299408},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.47419577836990356},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.45981889963150024},{"id":"https://openalex.org/C550623735","wikidata":"https://www.wikidata.org/wiki/Q867","display_name":"Germanium","level":3,"score":0.44968101382255554},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.4199545681476593},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3964247703552246},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3799055516719818},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.37402164936065674},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.337502658367157},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2635875642299652},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.24638119339942932},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.21573114395141602},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.13531014323234558},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.08866459131240845},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.23919/mipro52101.2021.9597145","is_oa":false,"landing_page_url":"https://doi.org/10.23919/mipro52101.2021.9597145","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)","raw_type":"proceedings-article"},{"id":"pmh:oai:iris.uniroma1.it:11573/1682794","is_oa":false,"landing_page_url":"https://hdl.handle.net/11573/1682794","pdf_url":null,"source":{"id":"https://openalex.org/S4377196107","display_name":"IRIS Research product catalog (Sapienza University of Rome)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"info:eu-repo/semantics/conferenceObject"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W612314388","https://openalex.org/W1986109455","https://openalex.org/W1989843937","https://openalex.org/W2004083430","https://openalex.org/W2004956765","https://openalex.org/W2033079418","https://openalex.org/W2035738324","https://openalex.org/W2041492467","https://openalex.org/W2046283086","https://openalex.org/W2060853360","https://openalex.org/W2067579992","https://openalex.org/W2067724239","https://openalex.org/W2247895399","https://openalex.org/W2555816105","https://openalex.org/W6651640116"],"related_works":["https://openalex.org/W2392011998","https://openalex.org/W3081557173","https://openalex.org/W1948587299","https://openalex.org/W2044647038","https://openalex.org/W2345009811","https://openalex.org/W2360876908","https://openalex.org/W1989579897","https://openalex.org/W2353265708","https://openalex.org/W2034645508","https://openalex.org/W2275386326"],"abstract_inverted_index":{"Strained":[0],"modulation-doped":[1],"quantum":[2],"wells":[3],"(QW)":[4],"offer":[5],"a":[6,45,73,85,112,119,130,136,155,158,162],"huge":[7],"potential":[8],"for":[9,37,67,195],"semiconductor":[10],"device":[11,183],"applications":[12],"due":[13,168],"to":[14,154,169],"their":[15],"high":[16],"mobility.":[17,205],"The":[18,53,124,145],"material":[19],"Ge":[20,38,90,110,146,187],"is":[21,41,51,55,103,148,172,189],"particularly":[22],"interesting":[23],"here,":[24],"exhibiting":[25],"the":[26,35,82,166,186,196,203],"highest":[27],"bulk":[28],"hole-mobility":[29],"of":[30,60,84,94,107,133,165,185],"all":[31],"known":[32],"semiconductors.":[33],"However,":[34],"growth":[36,83],"QW":[39,91,147,188],"structures":[40],"quite":[42],"complex":[43],"and":[44,151,199],"special":[46],"virtual":[47],"substrate":[48],"(VS)":[49],"technique":[50],"needed.":[52],"VS":[54,160],"commonly":[56],"grown":[57,104],"with":[58,69,111,157],"thicknesses":[59],"over$1\\":[61],"\\mu":[62],"\\mathrm{m}$,":[63],"making":[64],"it":[65,153],"difficult":[66],"integration":[68,184],"other":[70],"devices":[71],"on":[72,81,92],"single":[74],"chip.":[75],"In":[76],"this":[77],"paper,":[78],"we":[79],"report":[80],"15":[86],"nm":[87,109,121],"thick":[88],"strained":[89],"top":[93],"a$\\mathbf{Si_{1-x}}\\mathbf{Ge_{x}}$VS":[95],"and$\\mathbf{Si_{0.2}}\\mathbf{Ge_{0.8}}$buffer":[96],"layer,":[97],"using":[98],"Molecular":[99],"Beam":[100],"Epitaxy.":[101],"The$\\mathbf{Si_{1-x}}\\mathbf{Ge_{x}}$VS":[102],"by":[105,118],"deposition":[106],"100":[108,120],"subsequent":[113],"high-temperature":[114],"annealing":[115],"step,":[116],"followed":[117],"thick$\\mathbf{Si_{0.2}}\\mathbf{Ge_{0.8}}$buffer":[122],"layer.":[123],"resulting":[125],"two-dimensional":[126],"hole":[127,131],"gas":[128],"reaches":[129],"mobility":[132,167],"over$\\boldsymbol{8\\cdot":[134],"10^{4}\\text{cm}^{2}\\mathrm{V}^{-1}\\mathrm{s}^{-1}}$with":[135],"corresponding":[137],"sheet":[138],"carrier":[139],"density":[140],"of$\\boldsymbol{5.7\\cdot":[141],"10^{11}\\text{cm}^{-2}}$at":[142],"8":[143],"K.":[144],"further":[149],"analysed,":[150],"comparing":[152],"sample":[156],"higher":[159],"thickness,":[161],"possible":[163],"limitation":[164],"background":[170,200],"doping":[171,201],"being":[173],"discussed.":[174],"These":[175],"results":[176],"show":[177],"that":[178],"complementary":[179],"metal-oxide-semiconductor":[180],"(CMOS)":[181],"compatible":[182],"possible,":[190],"thin":[191],"buffer":[192],"layers":[193],"suffice":[194],"mobilities":[197],"achieved":[198],"limits":[202],"low-temperature":[204]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}