{"id":"https://openalex.org/W4385223676","doi":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185429","title":"A 3-nm 27.6-Mbit/mm2 Self-timed SRAM Enabling 0.48 - 1.2 V Wide Operating Range with Far-end Pre-charge and Weak-Bit Tracking","display_name":"A 3-nm 27.6-Mbit/mm2 Self-timed SRAM Enabling 0.48 - 1.2 V Wide Operating Range with Far-end Pre-charge and Weak-Bit Tracking","publication_year":2023,"publication_date":"2023-06-11","ids":{"openalex":"https://openalex.org/W4385223676","doi":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185429"},"language":"en","primary_location":{"id":"doi:10.23919/vlsitechnologyandcir57934.2023.10185429","is_oa":false,"landing_page_url":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185429","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"Yumito Aoyagi","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yumito Aoyagi","raw_affiliation_strings":["TSMC Design Technology Japan,Yokohama,Japan","TSMC Design Technology Japan, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC Design Technology Japan,Yokohama,Japan","institution_ids":[]},{"raw_affiliation_string":"TSMC Design Technology Japan, Yokohama, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088276903","display_name":"Makoto Yabuuchi","orcid":"https://orcid.org/0000-0003-1515-4726"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Makoto Yabuuchi","raw_affiliation_strings":["TSMC Design Technology Japan,Yokohama,Japan","TSMC Design Technology Japan, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC Design Technology Japan,Yokohama,Japan","institution_ids":[]},{"raw_affiliation_string":"TSMC Design Technology Japan, Yokohama, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103032021","display_name":"Tomotaka Tanaka","orcid":"https://orcid.org/0009-0009-0000-227X"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Tomotaka Tanaka","raw_affiliation_strings":["TSMC Design Technology Japan,Yokohama,Japan","TSMC Design Technology Japan, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC Design Technology Japan,Yokohama,Japan","institution_ids":[]},{"raw_affiliation_string":"TSMC Design Technology Japan, Yokohama, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102538016","display_name":"Yuichiro Ishii","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yuichiro Ishii","raw_affiliation_strings":["TSMC Design Technology Japan,Yokohama,Japan","TSMC Design Technology Japan, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC Design Technology Japan,Yokohama,Japan","institution_ids":[]},{"raw_affiliation_string":"TSMC Design Technology Japan, Yokohama, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020509077","display_name":"Yoshiaki Osada","orcid":"https://orcid.org/0009-0001-2796-4243"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yoshiaki Osada","raw_affiliation_strings":["TSMC Design Technology Japan,Yokohama,Japan","TSMC Design Technology Japan, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC Design Technology Japan,Yokohama,Japan","institution_ids":[]},{"raw_affiliation_string":"TSMC Design Technology Japan, Yokohama, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112437215","display_name":"Takaaki Nakazato","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Takaaki Nakazato","raw_affiliation_strings":["TSMC Design Technology Japan,Yokohama,Japan","TSMC Design Technology Japan, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC Design Technology Japan,Yokohama,Japan","institution_ids":[]},{"raw_affiliation_string":"TSMC Design Technology Japan, Yokohama, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047952713","display_name":"Koji Nii","orcid":"https://orcid.org/0000-0002-9986-5308"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Koji Nii","raw_affiliation_strings":["TSMC Design Technology Japan,Yokohama,Japan","TSMC Design Technology Japan, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC Design Technology Japan,Yokohama,Japan","institution_ids":[]},{"raw_affiliation_string":"TSMC Design Technology Japan, Yokohama, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108900246","display_name":"Isabel Wang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Isabel Wang","raw_affiliation_strings":["TSMC, Hsinchu,Taiwan","TSMC, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC, Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"TSMC, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102914090","display_name":"Yu-Hao Hsu","orcid":"https://orcid.org/0000-0002-3165-1960"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yu-Hao Hsu","raw_affiliation_strings":["TSMC, Hsinchu,Taiwan","TSMC, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC, Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"TSMC, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102615711","display_name":"Hong-Chen Cheng","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Hong-Chen Cheng","raw_affiliation_strings":["TSMC, Hsinchu,Taiwan","TSMC, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC, Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"TSMC, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102320565","display_name":"Hung-Jen Liao","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Hung-Jen Liao","raw_affiliation_strings":["TSMC, Hsinchu,Taiwan","TSMC, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC, Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"TSMC, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5114087240","display_name":"Tsung-Yung Jonathan Chang","orcid":"https://orcid.org/0009-0007-6505-5474"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Tsung-Yung Jonathan Chang","raw_affiliation_strings":["TSMC, Hsinchu,Taiwan","TSMC, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC, Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"TSMC, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":12,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.3499,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.80704598,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":95,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/megabit","display_name":"Megabit","score":0.890955924987793},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.8297419548034668},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5109135508537292},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5066946148872375},{"id":"https://openalex.org/keywords/bit","display_name":"Bit (key)","score":0.4558609127998352},{"id":"https://openalex.org/keywords/charge","display_name":"Charge (physics)","score":0.4551714062690735},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.42280369997024536},{"id":"https://openalex.org/keywords/macro","display_name":"Macro","score":0.4198681712150574},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.41438406705856323},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.35873842239379883},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.35758110880851746},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20497211813926697},{"id":"https://openalex.org/keywords/computer-network","display_name":"Computer network","score":0.06768542528152466}],"concepts":[{"id":"https://openalex.org/C185177783","wikidata":"https://www.wikidata.org/wiki/Q3332814","display_name":"Megabit","level":2,"score":0.890955924987793},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8297419548034668},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5109135508537292},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5066946148872375},{"id":"https://openalex.org/C117011727","wikidata":"https://www.wikidata.org/wiki/Q1278488","display_name":"Bit (key)","level":2,"score":0.4558609127998352},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.4551714062690735},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.42280369997024536},{"id":"https://openalex.org/C166955791","wikidata":"https://www.wikidata.org/wiki/Q629579","display_name":"Macro","level":2,"score":0.4198681712150574},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.41438406705856323},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.35873842239379883},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.35758110880851746},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20497211813926697},{"id":"https://openalex.org/C31258907","wikidata":"https://www.wikidata.org/wiki/Q1301371","display_name":"Computer network","level":1,"score":0.06768542528152466},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/vlsitechnologyandcir57934.2023.10185429","is_oa":false,"landing_page_url":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185429","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8100000023841858,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2064744906","https://openalex.org/W2094638712","https://openalex.org/W2057684636","https://openalex.org/W2042005224","https://openalex.org/W2030816003","https://openalex.org/W2343227376","https://openalex.org/W4239992647","https://openalex.org/W2170007206","https://openalex.org/W1554458299","https://openalex.org/W2076325756"],"abstract_inverted_index":{"A":[0],"3-nm":[1,53],"single-port":[2],"(SP)":[3],"6T":[4],"SRAM":[5,50],"macro":[6,51],"has":[7],"been":[8],"proposed":[9],"using":[10],"far-end":[11],"pre-charge":[12,30],"(FPC)":[13],"circuit":[14,21],"and":[15,32,45,63],"weak-bit":[16],"(WB)":[17],"tracking":[18],"circuit.":[19],"These":[20],"can":[22],"reduce":[23],"write":[24],"cycle":[25,34],"time":[26,31,35],"to":[27,36],"boost":[28],"the":[29,38],"read":[33],"improve":[37],"trackability":[39],"of":[40],"supply":[41],"voltage.":[42],"We":[43],"designed":[44],"fabricated":[46],"a":[47],"434kbit":[48],"SP":[49],"on":[52],"FinFET":[54],"technology.":[55],"The":[56],"bit":[57],"density":[58],"is":[59,71],"$27.6-\\mathrm{Mbit}":[60],"/":[61],"\\mathrm{mm}^{2}$":[62],"achieved":[64],"1.9GHz":[65],"operation":[66],"at":[67],"$0.75":[68],"\\mathrm{~V}$":[69],"which":[70],"35%":[72],"faster":[73],"than":[74],"conventional":[75],"performance.":[76]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":5}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}