{"id":"https://openalex.org/W4385218161","doi":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185414","title":"Foundry Monolithic 3D BEOL Transistor + Memory Stack: Iso-performance and Iso-footprint BEOL Carbon Nanotube FET+RRAM vs. FEOL Silicon FET+RRAM","display_name":"Foundry Monolithic 3D BEOL Transistor + Memory Stack: Iso-performance and Iso-footprint BEOL Carbon Nanotube FET+RRAM vs. FEOL Silicon FET+RRAM","publication_year":2023,"publication_date":"2023-06-11","ids":{"openalex":"https://openalex.org/W4385218161","doi":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185414"},"language":"en","primary_location":{"id":"doi:10.23919/vlsitechnologyandcir57934.2023.10185414","is_oa":false,"landing_page_url":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185414","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5011011809","display_name":"Tathagata Srimani","orcid":"https://orcid.org/0000-0002-1238-7324"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"T. Srimani","raw_affiliation_strings":["Stanford University,CA,USA","Stanford University, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University,CA,USA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"Stanford University, CA, USA","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066880605","display_name":"A. C. Yu","orcid":null},"institutions":[{"id":"https://openalex.org/I4210110987","display_name":"IIT@MIT","ror":"https://ror.org/01wp8zh54","country_code":"US","type":"facility","lineage":["https://openalex.org/I30771326","https://openalex.org/I4210110987"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. C. Yu","raw_affiliation_strings":["MIT,MA,USA","MIT, MA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MIT,MA,USA","institution_ids":["https://openalex.org/I4210110987"]},{"raw_affiliation_string":"MIT, MA, USA","institution_ids":["https://openalex.org/I4210110987"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033289364","display_name":"Robert M. Radway","orcid":"https://orcid.org/0000-0003-3393-5489"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. M. Radway","raw_affiliation_strings":["Stanford University,CA,USA","Stanford University, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University,CA,USA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"Stanford University, CA, USA","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082730240","display_name":"D. Rich","orcid":"https://orcid.org/0000-0002-7515-1466"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. T. Rich","raw_affiliation_strings":["Stanford University,CA,USA","Stanford University, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University,CA,USA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"Stanford University, CA, USA","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061162466","display_name":"Matthew D. Nelson","orcid":"https://orcid.org/0000-0002-2085-8974"},"institutions":[{"id":"https://openalex.org/I4210159769","display_name":"ARC Technology (United States)","ror":"https://ror.org/05w34fa93","country_code":"US","type":"company","lineage":["https://openalex.org/I4210159769"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Nelson","raw_affiliation_strings":["SkyWater Technology Foundry,MN,USA","SkyWater Technology Foundry, MN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SkyWater Technology Foundry,MN,USA","institution_ids":["https://openalex.org/I4210159769"]},{"raw_affiliation_string":"SkyWater Technology Foundry, MN, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066440288","display_name":"S.S. Wong","orcid":"https://orcid.org/0000-0003-4361-1744"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Wong","raw_affiliation_strings":["Stanford University,CA,USA","Stanford University, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University,CA,USA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"Stanford University, CA, USA","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101702608","display_name":"David Murphy","orcid":"https://orcid.org/0000-0002-3221-4623"},"institutions":[{"id":"https://openalex.org/I117023288","display_name":"Analog Devices (United States)","ror":"https://ror.org/01545pm61","country_code":"US","type":"company","lineage":["https://openalex.org/I117023288"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Murphy","raw_affiliation_strings":["Analog Devices, Inc.,MA,USA","Analog Devices, Inc., MA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Analog Devices, Inc.,MA,USA","institution_ids":["https://openalex.org/I117023288"]},{"raw_affiliation_string":"Analog Devices, Inc., MA, USA","institution_ids":["https://openalex.org/I117023288"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080259213","display_name":"Samuel H. Fuller","orcid":"https://orcid.org/0000-0002-0298-4504"},"institutions":[{"id":"https://openalex.org/I117023288","display_name":"Analog Devices (United States)","ror":"https://ror.org/01545pm61","country_code":"US","type":"company","lineage":["https://openalex.org/I117023288"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Fuller","raw_affiliation_strings":["Analog Devices, Inc.,MA,USA","Analog Devices, Inc., MA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Analog Devices, Inc.,MA,USA","institution_ids":["https://openalex.org/I117023288"]},{"raw_affiliation_string":"Analog Devices, Inc., MA, USA","institution_ids":["https://openalex.org/I117023288"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003214642","display_name":"Gage Hills","orcid":"https://orcid.org/0000-0002-4912-814X"},"institutions":[{"id":"https://openalex.org/I2801851002","display_name":"Harvard University Press","ror":"https://ror.org/006v7bf86","country_code":"US","type":"other","lineage":["https://openalex.org/I136199984","https://openalex.org/I2801851002"]},{"id":"https://openalex.org/I4210110987","display_name":"IIT@MIT","ror":"https://ror.org/01wp8zh54","country_code":"US","type":"facility","lineage":["https://openalex.org/I30771326","https://openalex.org/I4210110987"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"G. Hills","raw_affiliation_strings":["MIT,MA,USA","Harvard University, MA, USA","MIT, MA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MIT,MA,USA","institution_ids":["https://openalex.org/I4210110987"]},{"raw_affiliation_string":"Harvard University, MA, USA","institution_ids":["https://openalex.org/I2801851002"]},{"raw_affiliation_string":"MIT, MA, USA","institution_ids":["https://openalex.org/I4210110987"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036312663","display_name":"Subhasish Mitra","orcid":"https://orcid.org/0000-0002-5572-5194"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Mitra","raw_affiliation_strings":["Stanford University,CA,USA","Stanford University, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University,CA,USA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"Stanford University, CA, USA","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5061843047","display_name":"Max M. Shulaker","orcid":"https://orcid.org/0000-0003-2237-193X"},"institutions":[{"id":"https://openalex.org/I117023288","display_name":"Analog Devices (United States)","ror":"https://ror.org/01545pm61","country_code":"US","type":"company","lineage":["https://openalex.org/I117023288"]},{"id":"https://openalex.org/I4210110987","display_name":"IIT@MIT","ror":"https://ror.org/01wp8zh54","country_code":"US","type":"facility","lineage":["https://openalex.org/I30771326","https://openalex.org/I4210110987"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. M. Shulaker","raw_affiliation_strings":["MIT,MA,USA","Analog Devices, Inc., MA, USA","MIT, MA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MIT,MA,USA","institution_ids":["https://openalex.org/I4210110987"]},{"raw_affiliation_string":"Analog Devices, Inc., MA, USA","institution_ids":["https://openalex.org/I117023288"]},{"raw_affiliation_string":"MIT, MA, USA","institution_ids":["https://openalex.org/I4210110987"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":10.2764,"has_fulltext":false,"cited_by_count":19,"citation_normalized_percentile":{"value":0.99188432,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9972000122070312,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.8089545369148254},{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.5808699131011963},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5583890676498413},{"id":"https://openalex.org/keywords/stack","display_name":"Stack (abstract data type)","score":0.5567123889923096},{"id":"https://openalex.org/keywords/footprint","display_name":"Footprint","score":0.5239534378051758},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4768867790699005},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.45229873061180115},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.44747090339660645},{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistor","display_name":"Carbon nanotube field-effect transistor","score":0.4427155554294586},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.40418773889541626},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.37671226263046265},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36011144518852234},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.17710843682289124},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15835106372833252},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10588690638542175}],"concepts":[{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.8089545369148254},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.5808699131011963},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5583890676498413},{"id":"https://openalex.org/C9395851","wikidata":"https://www.wikidata.org/wiki/Q177929","display_name":"Stack (abstract data type)","level":2,"score":0.5567123889923096},{"id":"https://openalex.org/C132943942","wikidata":"https://www.wikidata.org/wiki/Q2562511","display_name":"Footprint","level":2,"score":0.5239534378051758},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4768867790699005},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.45229873061180115},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.44747090339660645},{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.4427155554294586},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.40418773889541626},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.37671226263046265},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36011144518852234},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.17710843682289124},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15835106372833252},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10588690638542175},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/vlsitechnologyandcir57934.2023.10185414","is_oa":false,"landing_page_url":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185414","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.6700000166893005,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W4237331446","https://openalex.org/W4244605149","https://openalex.org/W4251980294"],"related_works":["https://openalex.org/W2054635671","https://openalex.org/W2545245183","https://openalex.org/W2017425642","https://openalex.org/W2350916061","https://openalex.org/W2952918855","https://openalex.org/W1970117475","https://openalex.org/W4396815615","https://openalex.org/W3161624601","https://openalex.org/W2078381924","https://openalex.org/W4381388454"],"abstract_inverted_index":{"We":[0],"show,":[1],"for":[2,120,144],"the":[3,41,81,85,89],"first":[4],"time,":[5],"a":[6,97,138],"BEOL":[7,93,134],"carbon":[8],"nanotube":[9],"FET":[10,51],"(CNFET)":[11],"+":[12],"Resistive":[13],"RAM":[14],"(RRAM)":[15],"stack":[16,47],"through":[17],"monolithic":[18],"3D":[19],"(M3D)":[20],"integration,":[21],"directly":[22],"over":[23],"silicon":[24],"(Si)":[25],"CMOS,":[26],"that":[27],"achieves":[28],"comparable":[29],"performance":[30],"(read":[31],"power":[32],"write":[33],"energy/latency,":[34],"endurance,":[35],"retention,":[36],"multiple":[37],"bits-per-cell":[38],"capability)":[39],"in":[40],"same":[42,82,86,90],"footprint":[43],"as":[44],"conventional":[45],"RRAM":[46],"using":[48],"FEOL":[49,76,110],"Si":[50,67,77],"access":[52],"transistors.":[53],"This":[54],"process":[55],"is":[56,73],"established":[57],"within":[58],"SkyWater":[59],"Technology":[60],"Foundry":[61],"(90/130nm":[62],"technology":[63,95],"node":[64],"on":[65,80],"200mm":[66],"wafers),":[68],"and":[69,140,149,152],"an":[70],"apples-to-apples":[71],"comparison":[72],"made":[74],"versus":[75],"FET+RRAM":[78],"fabricated":[79],"wafers,":[83],"from":[84],"foundry,":[87],"at":[88],"node.":[91],"Such":[92],"CNFET+RRAM":[94,135],"unlocks":[96],"large":[98],"architecture":[99],"design":[100],"space":[101],"with":[102],"significant":[103],"system-level":[104,147],"energy-delay":[105],"product":[106],"(EDP)":[107],"benefits":[108,119],"vs.":[109],"Si+RRAM-only":[111],"designs,":[112],"e.g.,":[113],"$\\gt":[114],"5":[115],"\\times":[116],"$":[117],"EDP":[118],"new":[121,139],"iso-footprint,":[122],"iso-memory-capacity":[123],"M3D":[124,130],"architectures":[125],"uniquely":[126],"enabled":[127],"by":[128],"our":[129],"physical":[131],"design.":[132],"Our":[133],"therefore":[136],"creates":[137],"complementary":[141],"integration":[142],"path":[143],"dramatically":[145],"improving":[146],"energy":[148],"delay,":[150],"iso-node":[151],"iso-footprint.":[153]},"counts_by_year":[{"year":2026,"cited_by_count":4},{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":8},{"year":2023,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}