{"id":"https://openalex.org/W4385192520","doi":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185400","title":"Epitaxial Strain Control of Hf<sub>x</sub>Zr1-<sub>x</sub>O2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor","display_name":"Epitaxial Strain Control of Hf<sub>x</sub>Zr1-<sub>x</sub>O2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor","publication_year":2023,"publication_date":"2023-06-11","ids":{"openalex":"https://openalex.org/W4385192520","doi":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185400"},"language":"en","primary_location":{"id":"doi:10.23919/vlsitechnologyandcir57934.2023.10185400","is_oa":false,"landing_page_url":"http://dx.doi.org/10.23919/vlsitechnologyandcir57934.2023.10185400","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100649757","display_name":"Seongho Kim","orcid":"https://orcid.org/0000-0003-0396-772X"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Seongho Kim","raw_affiliation_strings":["KAIST,Korea","KAIST, Korea"],"affiliations":[{"raw_affiliation_string":"KAIST,Korea","institution_ids":["https://openalex.org/I157485424"]},{"raw_affiliation_string":"KAIST, Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039554906","display_name":"Young Keun Park","orcid":"https://orcid.org/0000-0002-0703-011X"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young Keun Park","raw_affiliation_strings":["KAIST,Korea","KAIST, Korea"],"affiliations":[{"raw_affiliation_string":"KAIST,Korea","institution_ids":["https://openalex.org/I157485424"]},{"raw_affiliation_string":"KAIST, Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004524620","display_name":"Gyu Soup Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I196345858","display_name":"Chungnam National University","ror":"https://ror.org/0227as991","country_code":"KR","type":"education","lineage":["https://openalex.org/I196345858"]},{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gyu Soup Lee","raw_affiliation_strings":["Chungnam National University,Korea","KAIST,Korea","KAIST, Korea"],"affiliations":[{"raw_affiliation_string":"Chungnam National University,Korea","institution_ids":["https://openalex.org/I196345858"]},{"raw_affiliation_string":"KAIST,Korea","institution_ids":["https://openalex.org/I157485424"]},{"raw_affiliation_string":"KAIST, Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035183736","display_name":"Eui Joong Shin","orcid":"https://orcid.org/0000-0001-8043-8915"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Eui Joong Shin","raw_affiliation_strings":["KAIST,Korea","KAIST, Korea"],"affiliations":[{"raw_affiliation_string":"KAIST,Korea","institution_ids":["https://openalex.org/I157485424"]},{"raw_affiliation_string":"KAIST, Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104147099","display_name":"Woon San Ko","orcid":null},"institutions":[{"id":"https://openalex.org/I196345858","display_name":"Chungnam National University","ror":"https://ror.org/0227as991","country_code":"KR","type":"education","lineage":["https://openalex.org/I196345858"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Woon San Ko","raw_affiliation_strings":["Chungnam National University,Korea","Chungnam National University, Korea"],"affiliations":[{"raw_affiliation_string":"Chungnam National University,Korea","institution_ids":["https://openalex.org/I196345858"]},{"raw_affiliation_string":"Chungnam National University, Korea","institution_ids":["https://openalex.org/I196345858"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102313200","display_name":"Hi Deok Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I196345858","display_name":"Chungnam National University","ror":"https://ror.org/0227as991","country_code":"KR","type":"education","lineage":["https://openalex.org/I196345858"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hi Deok Lee","raw_affiliation_strings":["Chungnam National University,Korea","Chungnam National University, Korea"],"affiliations":[{"raw_affiliation_string":"Chungnam National University,Korea","institution_ids":["https://openalex.org/I196345858"]},{"raw_affiliation_string":"Chungnam National University, Korea","institution_ids":["https://openalex.org/I196345858"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048377496","display_name":"Ga\u2010Won Lee","orcid":"https://orcid.org/0000-0001-5285-4815"},"institutions":[{"id":"https://openalex.org/I196345858","display_name":"Chungnam National University","ror":"https://ror.org/0227as991","country_code":"KR","type":"education","lineage":["https://openalex.org/I196345858"]},{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ga Won Lee","raw_affiliation_strings":["Chungnam National University,Korea","KAIST,Korea","Chungnam National University, Korea"],"affiliations":[{"raw_affiliation_string":"Chungnam National University,Korea","institution_ids":["https://openalex.org/I196345858"]},{"raw_affiliation_string":"KAIST,Korea","institution_ids":["https://openalex.org/I157485424"]},{"raw_affiliation_string":"Chungnam National University, Korea","institution_ids":["https://openalex.org/I196345858"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113679175","display_name":"Byung Jin Cho","orcid":null},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Byung Jin Cho","raw_affiliation_strings":["KAIST,Korea","KAIST, Korea"],"affiliations":[{"raw_affiliation_string":"KAIST,Korea","institution_ids":["https://openalex.org/I157485424"]},{"raw_affiliation_string":"KAIST, Korea","institution_ids":["https://openalex.org/I157485424"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5100649757"],"corresponding_institution_ids":["https://openalex.org/I157485424"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.07062925,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10107","display_name":"Ferroelectric and Piezoelectric Materials","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10886","display_name":"Multiferroics and related materials","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.7695550918579102},{"id":"https://openalex.org/keywords/orthorhombic-crystal-system","display_name":"Orthorhombic crystal system","score":0.7085421681404114},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.6951921582221985},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.668586790561676},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.5979348421096802},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.5647202730178833},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5588974356651306},{"id":"https://openalex.org/keywords/crystallization","display_name":"Crystallization","score":0.5496396422386169},{"id":"https://openalex.org/keywords/phase","display_name":"Phase (matter)","score":0.5004041194915771},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.48526522517204285},{"id":"https://openalex.org/keywords/crystallography","display_name":"Crystallography","score":0.47390758991241455},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4435514807701111},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.3490244746208191},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.20556193590164185},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.18373101949691772},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.1720324158668518},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.16282165050506592},{"id":"https://openalex.org/keywords/crystal-structure","display_name":"Crystal structure","score":0.1389094889163971}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.7695550918579102},{"id":"https://openalex.org/C37243968","wikidata":"https://www.wikidata.org/wiki/Q648961","display_name":"Orthorhombic crystal system","level":3,"score":0.7085421681404114},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.6951921582221985},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.668586790561676},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.5979348421096802},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.5647202730178833},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5588974356651306},{"id":"https://openalex.org/C203036418","wikidata":"https://www.wikidata.org/wiki/Q284256","display_name":"Crystallization","level":2,"score":0.5496396422386169},{"id":"https://openalex.org/C44280652","wikidata":"https://www.wikidata.org/wiki/Q104837","display_name":"Phase (matter)","level":2,"score":0.5004041194915771},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.48526522517204285},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.47390758991241455},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4435514807701111},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3490244746208191},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.20556193590164185},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.18373101949691772},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1720324158668518},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.16282165050506592},{"id":"https://openalex.org/C115624301","wikidata":"https://www.wikidata.org/wiki/Q895901","display_name":"Crystal structure","level":2,"score":0.1389094889163971},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/vlsitechnologyandcir57934.2023.10185400","is_oa":false,"landing_page_url":"http://dx.doi.org/10.23919/vlsitechnologyandcir57934.2023.10185400","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2283815287","https://openalex.org/W4232768675","https://openalex.org/W4254714367"],"related_works":["https://openalex.org/W3120961607","https://openalex.org/W4401568740","https://openalex.org/W3148568549","https://openalex.org/W2098207691","https://openalex.org/W2393083297","https://openalex.org/W1648516568","https://openalex.org/W361036515","https://openalex.org/W2161286015","https://openalex.org/W2269474412","https://openalex.org/W2140607147"],"abstract_inverted_index":{"We":[0],"propose":[1],"for":[2,72],"the":[3,17],"first":[4],"time":[5],"a":[6,24,69],"method":[7],"to":[8],"crystallize":[9],"4.5":[10,48],"nm":[11],"H$\\mathrm{f}_{05}":[12],"Z":[13],"\\mathrm{r}_{05}\\mathrm{O}_{2}$":[14],"(HZO)":[15],"in":[16,77],"ferroelectric":[18,41],"orthorhombic":[19],"phase":[20,42],"(0-phase)":[21],"by":[22],"using":[23],"sub-nm":[25],"InGaZnO":[26],"(IGZO)":[27],"seed":[28],"layer.":[29],"Atomic":[30],"mismatch":[31],"between":[32],"IGZO":[33],"and":[34,62],"HZO":[35],"layers":[36],"introduces":[37],"epitaxial":[38],"strain,":[39],"inducing":[40],"crystallization":[43],"even":[44],"at":[45],"thickness":[46],"of":[47,54,59],"nm.":[49],"HZO/IGZO":[50,67],"achieved":[51],"an":[52],"EOT":[53],"0.44":[55],"nm,":[56],"coercive":[57],"voltage":[58],"0.51":[60],"V,":[61],"high":[63],"endurance":[64],">10<sup>14</sup>.":[65],"Hence,":[66],"is":[68],"promising":[70],"candidate":[71],"next":[73],"generation":[74],"high-k":[75],"dielectric":[76],"DRAM":[78],"capacitor":[79],"applications.":[80]},"counts_by_year":[],"updated_date":"2025-12-19T19:40:27.379048","created_date":"2025-10-10T00:00:00"}