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COMPARED TO CONVENTIONAL SI MATERIAL  GAN HAS MUCH LARGER BANDGAP AND LOWER INTRINSIC CARRIER DENSITY  WHICH WILL ALLOW FOR EFFICIENT ELECTRONIC DEVICES WORKING AT HIGH TEMPERATURES. COMPARED TO OTHER HIGH TEMPERATURE MATERIALS SUCH AS SIC  GAN HAS MUCH HIGHER MOBILITY  WHICH WILL LEAD TO ELECTRONIC DEVICE WITH MUCH HIGHER SPEED AND MICROSYSTEMS WITH HIGHER CLOCK FREQUENCY. IN THIS PROPOSAL  WE PLAN TO DEMONSTRATE A GAN-BASED MICROPROCESSOR THAT CAN WORK EFFICIENTLY UNDER HIGH TEMPERATURE (E.G. >500 C)  WHICH IS THE FIRST OF ITS KIND. FUNDAMENTAL STUDIES WILL BE PERFORMED ON THE HIGH TEMPERATURE PROPERTIES OF GAN DEVICES INCLUDING MATERIAL DEFECTS  ELECTRON TRANSPORTS  AND THERMAL STABILITIES  AND THEIR IMPACTS ON THE PERFORMANCE AND RELIABILITIES OF GAN MICROPROCESSORS WILL BE DISCUSSED. AN INTERDISCIPLINARY APPROACH IS PROPOSED WHICH INCLUDES MATERIAL GROWTH AND CHARACTERIZATION  TCAD-BASED DEVICE/ PROCESS SIMULATIONS  MICROPROCESSOR CHIP FABRICATION  AND COMPREHENSIVE HIGH TEMPERATURE CHARACTERIZATIONS. THE REALIZATION OF THIS MICROPROCESSOR REPRESENTS A POTENTIALLY DISRUPTIVE TECHNOLOGY THAT WILL ENABLE ELECTRONICS SYSTEM BASED ON WIDE BANDGAP GAN DEVICES WITH GREATER EFFICIENCY  MUCH REDUCED SIZE AND WEIGHT  AND HIGHER OPERATION TEMPERATURE  ALL OF WHICH ARE HIGHLY DESIRABLE FOR VARIOUS NASA AND SPACE APPLICATIONS.","funder_award_id":"80NSSC17K0768","funder_id":"https://openalex.org/F4320306101","funder_display_name":"National Aeronautics and Space Administration"},{"id":"https://openalex.org/G3771133134","display_name":null,"funder_award_id":"FA9550\u201022\u20101\u20100367","funder_id":"https://openalex.org/F4320338279","funder_display_name":"Air Force Office of Scientific Research"},{"id":"https://openalex.org/G3865384760","display_name":null,"funder_award_id":"80NSSC17K0768","funder_id":"https://openalex.org/F4320332372","funder_display_name":"Glenn Research Center"}],"funders":[{"id":"https://openalex.org/F4320306101","display_name":"National Aeronautics and Space Administration","ror":"https://ror.org/027ka1x80"},{"id":"https://openalex.org/F4320306994","display_name":"Lockheed Martin","ror":"https://ror.org/026er9r08"},{"id":"https://openalex.org/F4320308258","display_name":"Qualcomm","ror":"https://ror.org/002zrf773"},{"id":"https://openalex.org/F4320322037","display_name":"Nuclear Safety and Security Commission","ror":"https://ror.org/05qk3ge34"},{"id":"https://openalex.org/F4320332372","display_name":"Glenn Research Center","ror":"https://ror.org/059fqnc42"},{"id":"https://openalex.org/F4320338279","display_name":"Air Force Office of Scientific Research","ror":"https://ror.org/011e9bt93"}],"has_content":{"pdf":true,"grobid_xml":false},"content_urls":{"pdf":"https://content.openalex.org/works/W4385223290.pdf"},"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2095404987","https://openalex.org/W2364204112","https://openalex.org/W2364490146","https://openalex.org/W2390849982","https://openalex.org/W2389240179","https://openalex.org/W2320861030","https://openalex.org/W2375428758","https://openalex.org/W2006237748","https://openalex.org/W2375758231","https://openalex.org/W2363728260"],"abstract_inverted_index":{"This":[0,44],"article":[1],"reports":[2],"advances":[3],"in":[4,97],"high":[5],"temperature":[6,35,81],"(HT)":[7],"GaNon-Si":[8],"technology":[9,16,67],"by":[10,37,64],"taking":[11],"pioneering":[12],"steps":[13],"towards":[14],"design":[15,21],"co-optimization":[17],"(DTCO).":[18],"A":[19],"computer-aided":[20],"(CAD)":[22],"framework":[23,40,45],"was":[24,46,90],"established":[25],"and":[26,94],"experimentally":[27,71],"validated":[28],"up":[29,76],"to":[30,50,77],"$500":[31,78],"^{\\circ}\\mathrm{C}$,":[32],"the":[33,65,98],"highest":[34,80],"achieved":[36,91],"such":[38],"a":[39],"for":[41,83],"GaN":[42,86],"technology.":[43],"made":[47],"possible":[48],"thanks":[49],"(1)":[51],"demonstration":[52],"of":[53],"multiple":[54],"key":[55],"functional":[56],"building":[57],"blocks":[58],"(e.g.":[59],"arithmetic":[60],"logic":[61],"unit":[62],"(ALU))":[63],"proposed":[66],"at":[68],"HT;":[69],"(2)":[70],"calibrated":[72],"transistor":[73],"compact":[74],"models":[75],"^{\\circ}\\mathrm{C}($":[79],"modeled":[82],"an":[84],"Enhancement-mode":[85],"transistor).":[87],"Excellent":[88],"agreement":[89],"between":[92],"experimental":[93],"simulated":[95],"circuits":[96],"static":[99],"characteristics":[100],"(300":[101],"\u00b0C)":[102],"electronics.":[103]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":6},{"year":2023,"cited_by_count":2}],"updated_date":"2026-08-01T09:00:35.917206","created_date":"2025-10-10T00:00:00"}