{"id":"https://openalex.org/W4385212842","doi":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185349","title":"Demonstration of Recovery Annealing on 7-Bits per Cell 3D Flash Memory at Cryogenic Operation for Bit Cost Scalability and Sustainability","display_name":"Demonstration of Recovery Annealing on 7-Bits per Cell 3D Flash Memory at Cryogenic Operation for Bit Cost Scalability and Sustainability","publication_year":2023,"publication_date":"2023-06-11","ids":{"openalex":"https://openalex.org/W4385212842","doi":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185349"},"language":"en","primary_location":{"id":"doi:10.23919/vlsitechnologyandcir57934.2023.10185349","is_oa":false,"landing_page_url":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185349","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5066166544","display_name":"Yuta Aiba","orcid":null},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Yuta Aiba","raw_affiliation_strings":["Institute of Memory Technology Research &#x0026; Development,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology Research &#x0026; Development,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110790718","display_name":"Yusuke Higashi","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yusuke Higashi","raw_affiliation_strings":["Institute of Memory Technology Research &#x0026; Development,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology Research &#x0026; Development,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003106477","display_name":"Hitomi Tanaka","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hitomi Tanaka","raw_affiliation_strings":["Institute of Memory Technology Research &#x0026; Development,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology Research &#x0026; Development,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052711391","display_name":"Hiroki Tanaka","orcid":"https://orcid.org/0000-0002-6310-4697"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hiroki Tanaka","raw_affiliation_strings":["Institute of Memory Technology Research &#x0026; Development,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology Research &#x0026; Development,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052061989","display_name":"Fumie Kikushima","orcid":null},"institutions":[{"id":"https://openalex.org/I26410660","display_name":"Kio University","ror":"https://ror.org/03b657f73","country_code":"JP","type":"education","lineage":["https://openalex.org/I26410660"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Fumie Kikushima","raw_affiliation_strings":["Memory Div., Kioxia Corporation,Japan","Memory Div., Kioxia Corporation, Japan"],"affiliations":[{"raw_affiliation_string":"Memory Div., Kioxia Corporation,Japan","institution_ids":["https://openalex.org/I26410660"]},{"raw_affiliation_string":"Memory Div., Kioxia Corporation, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111533475","display_name":"Toshio Fujisawa","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Toshio Fujisawa","raw_affiliation_strings":["Institute of Memory Technology Research &#x0026; Development,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology Research &#x0026; Development,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016688966","display_name":"Hideko Mukaida","orcid":null},"institutions":[{"id":"https://openalex.org/I26410660","display_name":"Kio University","ror":"https://ror.org/03b657f73","country_code":"JP","type":"education","lineage":["https://openalex.org/I26410660"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hideko Mukaida","raw_affiliation_strings":["Memory Div., Kioxia Corporation,Japan","Memory Div., Kioxia Corporation, Japan"],"affiliations":[{"raw_affiliation_string":"Memory Div., Kioxia Corporation,Japan","institution_ids":["https://openalex.org/I26410660"]},{"raw_affiliation_string":"Memory Div., Kioxia Corporation, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039488307","display_name":"Masayuki Miura","orcid":null},"institutions":[{"id":"https://openalex.org/I26410660","display_name":"Kio University","ror":"https://ror.org/03b657f73","country_code":"JP","type":"education","lineage":["https://openalex.org/I26410660"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masayuki Miura","raw_affiliation_strings":["Memory Div., Kioxia Corporation,Japan","Memory Div., Kioxia Corporation, Japan"],"affiliations":[{"raw_affiliation_string":"Memory Div., Kioxia Corporation,Japan","institution_ids":["https://openalex.org/I26410660"]},{"raw_affiliation_string":"Memory Div., Kioxia Corporation, Japan","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103028848","display_name":"T. Sanuki","orcid":"https://orcid.org/0000-0003-2450-3684"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Tomoya Sanuki","raw_affiliation_strings":["Institute of Memory Technology Research &#x0026; Development,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology Research &#x0026; Development,Japan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5066166544"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.5355,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.64484752,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9926999807357788,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.7280009388923645},{"id":"https://openalex.org/keywords/flash-memory","display_name":"Flash memory","score":0.6545036435127258},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.629635214805603},{"id":"https://openalex.org/keywords/annealing","display_name":"Annealing (glass)","score":0.5716381669044495},{"id":"https://openalex.org/keywords/simulated-annealing","display_name":"Simulated annealing","score":0.5036250948905945},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.4995875358581543},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.45546966791152954},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.39827045798301697},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.36768412590026855},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2210843563079834},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.21840748190879822},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.172919362783432},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13923630118370056},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.12298429012298584},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.10841909050941467},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.08667552471160889}],"concepts":[{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.7280009388923645},{"id":"https://openalex.org/C2776531357","wikidata":"https://www.wikidata.org/wiki/Q174077","display_name":"Flash memory","level":2,"score":0.6545036435127258},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.629635214805603},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.5716381669044495},{"id":"https://openalex.org/C126980161","wikidata":"https://www.wikidata.org/wiki/Q863783","display_name":"Simulated annealing","level":2,"score":0.5036250948905945},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.4995875358581543},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.45546966791152954},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.39827045798301697},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.36768412590026855},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2210843563079834},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.21840748190879822},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.172919362783432},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13923630118370056},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.12298429012298584},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.10841909050941467},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08667552471160889},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/vlsitechnologyandcir57934.2023.10185349","is_oa":false,"landing_page_url":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185349","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/12","display_name":"Responsible consumption and production","score":0.5299999713897705}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2042090903","https://openalex.org/W2132827075","https://openalex.org/W2027819842","https://openalex.org/W1800601453","https://openalex.org/W2130985166","https://openalex.org/W1568080074","https://openalex.org/W2013438794","https://openalex.org/W4386075060","https://openalex.org/W2154861937","https://openalex.org/W1996607498"],"abstract_inverted_index":{"This":[0],"report":[1],"is":[2,90],"the":[3,16,32],"first":[4],"to":[5,30,75],"demonstrate":[6],"cryogenic":[7,25],"3D":[8],"flash":[9],"memory":[10,85],"of":[11,82],"7-bits":[12,64],"per":[13,65],"cell":[14,60,66],"with":[15],"recovery":[17],"annealing":[18,53],"applied":[19,50],"repeatedly.":[20],"We":[21,48],"combined":[22],"77":[23],"K":[24],"operation":[26,67],"and":[27,37,40,71,78,87],"epi-Si":[28],"channel":[29],"improve":[31],"data":[33],"retention,":[34],"read":[35],"noise,":[36,39],"program":[38],"their":[41],"degradation":[42],"caused":[43],"by":[44],"Program/Erase":[45],"(P/E)":[46],"cycles.":[47],"further":[49],"$200":[51],"^{\\circ}\\mathrm{C}$":[52],"which":[54],"recovers":[55],"performance":[56,70],"degradations":[57],"under":[58],"appropriate":[59],"Vth":[61],"conditions.":[62],"Reliable":[63],"can":[68],"maintain":[69],"energy":[72],"efficiency":[73],"competitive":[74],"current":[76],"QLC":[77],"NL-HDD":[79],"technologies.":[80],"Co-optimization":[81],"process":[83],"technology,":[84],"operation,":[86],"cooling":[88],"system":[89],"a":[91],"promising":[92],"solution":[93],"for":[94],"future":[95],"sustainable":[96],"bit":[97],"cost":[98],"scaling.":[99]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}
