{"id":"https://openalex.org/W4385216004","doi":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185306","title":"First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, L<sub>CH</sub> of 50 nm,&gt; 2\u00d710<sup>9</sup> Endurance, and 58.3% Area Saving","display_name":"First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, L<sub>CH</sub> of 50 nm,&gt; 2\u00d710<sup>9</sup> Endurance, and 58.3% Area Saving","publication_year":2023,"publication_date":"2023-06-11","ids":{"openalex":"https://openalex.org/W4385216004","doi":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185306"},"language":"en","primary_location":{"id":"doi:10.23919/vlsitechnologyandcir57934.2023.10185306","is_oa":false,"landing_page_url":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185306","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5089414360","display_name":"Xiaolin Wang","orcid":"https://orcid.org/0000-0002-2131-4178"},"institutions":[{"id":"https://openalex.org/I165932596","display_name":"National University of Singapore","ror":"https://ror.org/01tgyzw49","country_code":"SG","type":"education","lineage":["https://openalex.org/I165932596"]}],"countries":["SG"],"is_corresponding":true,"raw_author_name":"Xiaolin Wang","raw_affiliation_strings":["National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576"],"affiliations":[{"raw_affiliation_string":"National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576","institution_ids":["https://openalex.org/I165932596"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000856188","display_name":"Zijie Zheng","orcid":"https://orcid.org/0000-0001-8265-6019"},"institutions":[{"id":"https://openalex.org/I165932596","display_name":"National University of Singapore","ror":"https://ror.org/01tgyzw49","country_code":"SG","type":"education","lineage":["https://openalex.org/I165932596"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Zijie Zheng","raw_affiliation_strings":["National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576"],"affiliations":[{"raw_affiliation_string":"National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576","institution_ids":["https://openalex.org/I165932596"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050799754","display_name":"Qiwen Kong","orcid":null},"institutions":[{"id":"https://openalex.org/I165932596","display_name":"National University of Singapore","ror":"https://ror.org/01tgyzw49","country_code":"SG","type":"education","lineage":["https://openalex.org/I165932596"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Qiwen Kong","raw_affiliation_strings":["National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576"],"affiliations":[{"raw_affiliation_string":"National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576","institution_ids":["https://openalex.org/I165932596"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005366342","display_name":"Leming Jiao","orcid":"https://orcid.org/0000-0002-2562-7630"},"institutions":[{"id":"https://openalex.org/I165932596","display_name":"National University of Singapore","ror":"https://ror.org/01tgyzw49","country_code":"SG","type":"education","lineage":["https://openalex.org/I165932596"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Leming Jiao","raw_affiliation_strings":["National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576"],"affiliations":[{"raw_affiliation_string":"National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576","institution_ids":["https://openalex.org/I165932596"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025729156","display_name":"Kaizhen Han","orcid":"https://orcid.org/0000-0002-2376-0921"},"institutions":[{"id":"https://openalex.org/I165932596","display_name":"National University of Singapore","ror":"https://ror.org/01tgyzw49","country_code":"SG","type":"education","lineage":["https://openalex.org/I165932596"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Kaizhen Han","raw_affiliation_strings":["National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576"],"affiliations":[{"raw_affiliation_string":"National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576","institution_ids":["https://openalex.org/I165932596"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100729874","display_name":"Chen Sun","orcid":"https://orcid.org/0000-0001-5695-7803"},"institutions":[{"id":"https://openalex.org/I165932596","display_name":"National University of Singapore","ror":"https://ror.org/01tgyzw49","country_code":"SG","type":"education","lineage":["https://openalex.org/I165932596"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Chen Sun","raw_affiliation_strings":["National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576"],"affiliations":[{"raw_affiliation_string":"National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576","institution_ids":["https://openalex.org/I165932596"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086756993","display_name":"Zuopu Zhou","orcid":"https://orcid.org/0000-0003-4812-8524"},"institutions":[{"id":"https://openalex.org/I165932596","display_name":"National University of Singapore","ror":"https://ror.org/01tgyzw49","country_code":"SG","type":"education","lineage":["https://openalex.org/I165932596"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Zuopu Zhou","raw_affiliation_strings":["National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576"],"affiliations":[{"raw_affiliation_string":"National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576","institution_ids":["https://openalex.org/I165932596"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100348280","display_name":"Long Liu","orcid":"https://orcid.org/0000-0002-0338-0323"},"institutions":[{"id":"https://openalex.org/I165932596","display_name":"National University of Singapore","ror":"https://ror.org/01tgyzw49","country_code":"SG","type":"education","lineage":["https://openalex.org/I165932596"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Long Liu","raw_affiliation_strings":["National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576"],"affiliations":[{"raw_affiliation_string":"National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576","institution_ids":["https://openalex.org/I165932596"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063188500","display_name":"Yuye Kang","orcid":"https://orcid.org/0000-0002-9242-565X"},"institutions":[{"id":"https://openalex.org/I165932596","display_name":"National University of Singapore","ror":"https://ror.org/01tgyzw49","country_code":"SG","type":"education","lineage":["https://openalex.org/I165932596"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Yuye Kang","raw_affiliation_strings":["National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576"],"affiliations":[{"raw_affiliation_string":"National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576","institution_ids":["https://openalex.org/I165932596"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100726357","display_name":"Gan Liu","orcid":"https://orcid.org/0000-0002-6165-3799"},"institutions":[{"id":"https://openalex.org/I165932596","display_name":"National University of Singapore","ror":"https://ror.org/01tgyzw49","country_code":"SG","type":"education","lineage":["https://openalex.org/I165932596"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Gan Liu","raw_affiliation_strings":["National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576"],"affiliations":[{"raw_affiliation_string":"National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576","institution_ids":["https://openalex.org/I165932596"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100366092","display_name":"Dong Zhang","orcid":"https://orcid.org/0000-0002-0821-5538"},"institutions":[{"id":"https://openalex.org/I165932596","display_name":"National University of Singapore","ror":"https://ror.org/01tgyzw49","country_code":"SG","type":"education","lineage":["https://openalex.org/I165932596"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Dong Zhang","raw_affiliation_strings":["National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576"],"affiliations":[{"raw_affiliation_string":"National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576","institution_ids":["https://openalex.org/I165932596"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5112752921","display_name":"Xiao Gong","orcid":null},"institutions":[{"id":"https://openalex.org/I165932596","display_name":"National University of Singapore","ror":"https://ror.org/01tgyzw49","country_code":"SG","type":"education","lineage":["https://openalex.org/I165932596"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Xiao Gong","raw_affiliation_strings":["National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576"],"affiliations":[{"raw_affiliation_string":"National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,Singapore,117576","institution_ids":["https://openalex.org/I165932596"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":12,"corresponding_author_ids":["https://openalex.org/A5089414360"],"corresponding_institution_ids":["https://openalex.org/I165932596"],"apc_list":null,"apc_paid":null,"fwci":0.7796,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.71267051,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9603999853134155,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12046","display_name":"MXene and MAX Phase Materials","score":0.9180999994277954,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6576586365699768},{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.6137866973876953},{"id":"https://openalex.org/keywords/tin","display_name":"Tin","score":0.5704360008239746},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.541366696357727},{"id":"https://openalex.org/keywords/atomic-layer-deposition","display_name":"Atomic layer deposition","score":0.5382672548294067},{"id":"https://openalex.org/keywords/planar","display_name":"Planar","score":0.5250216126441956},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5069282650947571},{"id":"https://openalex.org/keywords/metal-gate","display_name":"Metal gate","score":0.42201560735702515},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.41535085439682007},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.37941813468933105},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.323317289352417},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.28751105070114136},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.17676037549972534},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.17596247792243958},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.16349640488624573},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.08252221345901489},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.0802452564239502}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6576586365699768},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.6137866973876953},{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.5704360008239746},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.541366696357727},{"id":"https://openalex.org/C69544855","wikidata":"https://www.wikidata.org/wiki/Q757625","display_name":"Atomic layer deposition","level":3,"score":0.5382672548294067},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.5250216126441956},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5069282650947571},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.42201560735702515},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.41535085439682007},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.37941813468933105},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.323317289352417},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28751105070114136},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.17676037549972534},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.17596247792243958},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.16349640488624573},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.08252221345901489},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0802452564239502},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/vlsitechnologyandcir57934.2023.10185306","is_oa":false,"landing_page_url":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185306","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321408","display_name":"Ministry of Education","ror":"https://ror.org/01p262204"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W1591282533","https://openalex.org/W3196762894","https://openalex.org/W4230065958","https://openalex.org/W1972216760","https://openalex.org/W2615495543","https://openalex.org/W4309371371","https://openalex.org/W1974960922","https://openalex.org/W4205716096","https://openalex.org/W2613333869","https://openalex.org/W1993783863"],"abstract_inverted_index":{"Addressing":[0],"the":[1,13,28,57,63,78,94,101],"major":[2],"concern":[3],"of":[4,49,65,82,108,116],"area-inefficiency":[5],"for":[6,12,96],"metal-ferroelectricmetal-insulator-semiconductor":[7],"(MFMIS)":[8],"ferroelectric":[9,70],"FETs":[10],"(Fe-FETs),":[11],"first":[14],"time,":[15],"we":[16],"demonstrate":[17],"3D":[18],"MFMIS":[19],"Fe-FETs":[20],"employing":[21],"Multi-Fin":[22],"floating":[23],"gate":[24,98],"(FG)":[25],"that":[26],"enlarges":[27],"channel":[29,91,105],"area":[30,34,52],"and":[31,72,89,119],"realizes":[32,46],"desired":[33],"ratio":[35],"(AR)":[36],"at":[37],"a":[38,104,112],"fixed":[39],"device":[40,44,102],"footprint.":[41],"Such":[42],"novel":[43],"architecture":[45],"an":[47,66],"AR":[48],"1:2.4":[50],"with$\\sim$58.3%":[51],"saving":[53],"as":[54,75,77],"compared":[55],"with":[56,62,103],"conventional":[58],"planar":[59],"structure.":[60],"Together":[61],"incorporation":[64],"in-situ":[67],"ALD":[68],"deposited":[69],"layer":[71,88],"TiN":[73],"electrodes,":[74],"well":[76],"ALD-enabled":[79],"conformal":[80],"growth":[81],"HfO":[83],"<inf":[84],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[85],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[86],"dielectric":[87],"ZnO":[90],"without":[92],"breaking":[93],"vacuum":[95],"enhanced":[97],"stack":[99],"quality,":[100],"length":[106],"$(L_{\\mathrm{C}\\mathrm{H}})$":[107],"50":[109],"nm":[110],"achieves":[111],"memory":[113],"window":[114],"(MW)":[115],"1.5":[117],"V":[118],"endurance":[120],"over":[121],"$2\\times":[122],"10^{9}$.":[123]},"counts_by_year":[{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":2}],"updated_date":"2026-04-02T13:48:15.688549","created_date":"2025-10-10T00:00:00"}