{"id":"https://openalex.org/W4385212767","doi":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185295","title":"HZO Scaling and Fatigue Recovery in FeFET with Low Voltage Operation: Evidence of Transition from Interface Degradation to Ferroelectric Fatigue","display_name":"HZO Scaling and Fatigue Recovery in FeFET with Low Voltage Operation: Evidence of Transition from Interface Degradation to Ferroelectric Fatigue","publication_year":2023,"publication_date":"2023-06-11","ids":{"openalex":"https://openalex.org/W4385212767","doi":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185295"},"language":"en","primary_location":{"id":"doi:10.23919/vlsitechnologyandcir57934.2023.10185295","is_oa":false,"landing_page_url":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185295","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5066229085","display_name":"Zuocheng Cai","orcid":"https://orcid.org/0009-0007-1648-2445"},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Zuocheng Cai","raw_affiliation_strings":["The University of Tokyo, 7-3-1 Hongo,Department of Electrical Engineering and Information Systems,Bunkyo-ku,Tokyo,Japan,113-8656"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The University of Tokyo, 7-3-1 Hongo,Department of Electrical Engineering and Information Systems,Bunkyo-ku,Tokyo,Japan,113-8656","institution_ids":["https://openalex.org/I74801974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086771285","display_name":"Kasidit Toprasertpong","orcid":"https://orcid.org/0000-0003-4206-8698"},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kasidit Toprasertpong","raw_affiliation_strings":["The University of Tokyo, 7-3-1 Hongo,Department of Electrical Engineering and Information Systems,Bunkyo-ku,Tokyo,Japan,113-8656"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The University of Tokyo, 7-3-1 Hongo,Department of Electrical Engineering and Information Systems,Bunkyo-ku,Tokyo,Japan,113-8656","institution_ids":["https://openalex.org/I74801974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025650947","display_name":"Mitsuru Takenaka","orcid":"https://orcid.org/0000-0002-9852-1474"},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Mitsuru Takenaka","raw_affiliation_strings":["The University of Tokyo, 7-3-1 Hongo,Department of Electrical Engineering and Information Systems,Bunkyo-ku,Tokyo,Japan,113-8656"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The University of Tokyo, 7-3-1 Hongo,Department of Electrical Engineering and Information Systems,Bunkyo-ku,Tokyo,Japan,113-8656","institution_ids":["https://openalex.org/I74801974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5042410367","display_name":"Shinichi Takagi","orcid":"https://orcid.org/0000-0002-5601-2604"},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shinichi Takagi","raw_affiliation_strings":["The University of Tokyo, 7-3-1 Hongo,Department of Electrical Engineering and Information Systems,Bunkyo-ku,Tokyo,Japan,113-8656"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The University of Tokyo, 7-3-1 Hongo,Department of Electrical Engineering and Information Systems,Bunkyo-ku,Tokyo,Japan,113-8656","institution_ids":["https://openalex.org/I74801974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I74801974"],"apc_list":null,"apc_paid":null,"fwci":12.9807,"has_fulltext":false,"cited_by_count":24,"citation_normalized_percentile":{"value":0.99491118,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9929999709129333,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12046","display_name":"MXene and MAX Phase Materials","score":0.9894999861717224,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.69534832239151},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.6730355620384216},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.5973670482635498},{"id":"https://openalex.org/keywords/interface","display_name":"Interface (matter)","score":0.5212672352790833},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4929540157318115},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4919907748699188},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.38168177008628845},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3735021948814392},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.35823774337768555},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3305089771747589},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17147281765937805},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.15114009380340576},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.1360158920288086}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.69534832239151},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.6730355620384216},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.5973670482635498},{"id":"https://openalex.org/C113843644","wikidata":"https://www.wikidata.org/wiki/Q901882","display_name":"Interface (matter)","level":4,"score":0.5212672352790833},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4929540157318115},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4919907748699188},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.38168177008628845},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3735021948814392},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.35823774337768555},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3305089771747589},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17147281765937805},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.15114009380340576},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.1360158920288086},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C28413391","wikidata":"https://www.wikidata.org/wiki/Q785542","display_name":"Capillary number","level":3,"score":0.0},{"id":"https://openalex.org/C196806460","wikidata":"https://www.wikidata.org/wiki/Q188603","display_name":"Capillary action","level":2,"score":0.0},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/vlsitechnologyandcir57934.2023.10185295","is_oa":false,"landing_page_url":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185295","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W2482978312","https://openalex.org/W2769364246","https://openalex.org/W2928181939","https://openalex.org/W3080194167","https://openalex.org/W3095256020","https://openalex.org/W4205786600","https://openalex.org/W4307965995","https://openalex.org/W4308243208","https://openalex.org/W4310267017"],"related_works":["https://openalex.org/W2795319754","https://openalex.org/W2410108108","https://openalex.org/W2248971758","https://openalex.org/W4327948915","https://openalex.org/W1974020084","https://openalex.org/W2129539607","https://openalex.org/W2418058283","https://openalex.org/W3095125871","https://openalex.org/W2079374728","https://openalex.org/W2013714003"],"abstract_inverted_index":{"Thickness":[0],"scaling":[1,33],"of":[2,19],"FeFETs":[3],"with":[4,55],"Hf0.5Zr0.5O2(HZO)":[5],"from":[6,64],"11":[7],"down":[8],"to":[9,35,68,89],"$4.6\\mathrm{~nm}$":[10],"is":[11,47,97],"systematically":[12],"studied":[13],"in":[14,17,100],"this":[15,81,94],"work":[16],"terms":[18],"the":[20,24,51,59],"memory":[21,25],"characteristics":[22],"and":[23,43,85],"window":[26],"(MW)":[27],"narrowing":[28,61],"mechanism.":[29],"The":[30],"HZO":[31,102],"thickness":[32],"leads":[34],"low-voltage":[36],"operation,":[37],"higher":[38],"$I_{\\text{on}}/I_{\\text{off}}$":[39],"ratio,":[40],"lower":[41],"S.S.,":[42],"better":[44],"endurance.":[45],"It":[46],"also":[48],"found,":[49],"for":[50],"first":[52],"time,":[53],"that":[54],"reducing":[56],"cycling":[57],"voltage":[58],"dominant":[60],"mechanism":[62],"changes":[63],"MOS":[65],"interface":[66],"degradation":[67],"ferroelectric":[69],"fatigue,":[70],"which":[71,96],"can":[72],"be":[73],"recovered":[74],"by":[75,92],"a":[76,87],"high-voltage":[77],"pulse.":[78],"Based":[79],"on":[80],"finding,":[82],"we":[83],"propose":[84],"demonstrate":[86],"method":[88],"improve":[90],"endurance":[91],"utilizing":[93],"recovery,":[95],"more":[98],"effective":[99],"thinner":[101],"FeFETs.":[103]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":11},{"year":2024,"cited_by_count":11},{"year":2023,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}