{"id":"https://openalex.org/W4385209938","doi":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185292","title":"Ultrahigh Bias Stability of ALD In<sub>2</sub>O<sub>3</sub> FETs Enabled by High Temperature O<sub>2</sub> Annealing","display_name":"Ultrahigh Bias Stability of ALD In<sub>2</sub>O<sub>3</sub> FETs Enabled by High Temperature O<sub>2</sub> Annealing","publication_year":2023,"publication_date":"2023-06-11","ids":{"openalex":"https://openalex.org/W4385209938","doi":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185292"},"language":"en","primary_location":{"id":"doi:10.23919/vlsitechnologyandcir57934.2023.10185292","is_oa":false,"landing_page_url":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185292","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051411691","display_name":"Zhuocheng Zhang","orcid":"https://orcid.org/0000-0002-3559-0704"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Zhuocheng Zhang","raw_affiliation_strings":["Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907"],"affiliations":[{"raw_affiliation_string":"Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087982402","display_name":"Zehao Lin","orcid":"https://orcid.org/0000-0002-5308-1065"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zehao Lin","raw_affiliation_strings":["Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907"],"affiliations":[{"raw_affiliation_string":"Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005388099","display_name":"Chang Niu","orcid":"https://orcid.org/0000-0003-3175-7164"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chang Niu","raw_affiliation_strings":["Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907"],"affiliations":[{"raw_affiliation_string":"Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059106002","display_name":"Mengwei Si","orcid":"https://orcid.org/0000-0003-0397-7741"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mengwei Si","raw_affiliation_strings":["Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907"],"affiliations":[{"raw_affiliation_string":"Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062737334","display_name":"Muhammad A. Alam","orcid":"https://orcid.org/0000-0001-8775-6043"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Muhammad A. Alam","raw_affiliation_strings":["Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907"],"affiliations":[{"raw_affiliation_string":"Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063222844","display_name":"Peide D. Ye","orcid":"https://orcid.org/0000-0001-8466-9745"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Peide D. Ye","raw_affiliation_strings":["Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907"],"affiliations":[{"raw_affiliation_string":"Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907","institution_ids":["https://openalex.org/I219193219"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5051411691"],"corresponding_institution_ids":["https://openalex.org/I219193219"],"apc_list":null,"apc_paid":null,"fwci":3.5105,"has_fulltext":false,"cited_by_count":27,"citation_normalized_percentile":{"value":0.93347677,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":99,"max":100},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9891999959945679,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.9887999892234802,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/annealing","display_name":"Annealing (glass)","score":0.7909473776817322},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6304634213447571},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4749850332736969},{"id":"https://openalex.org/keywords/thermal-stability","display_name":"Thermal stability","score":0.4580257833003998},{"id":"https://openalex.org/keywords/atomic-layer-deposition","display_name":"Atomic layer deposition","score":0.4418776333332062},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.26514604687690735},{"id":"https://openalex.org/keywords/chemical-engineering","display_name":"Chemical engineering","score":0.16331037878990173},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.14334020018577576},{"id":"https://openalex.org/keywords/thin-film","display_name":"Thin film","score":0.12449005246162415},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08892330527305603}],"concepts":[{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.7909473776817322},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6304634213447571},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4749850332736969},{"id":"https://openalex.org/C59061564","wikidata":"https://www.wikidata.org/wiki/Q7783071","display_name":"Thermal stability","level":2,"score":0.4580257833003998},{"id":"https://openalex.org/C69544855","wikidata":"https://www.wikidata.org/wiki/Q757625","display_name":"Atomic layer deposition","level":3,"score":0.4418776333332062},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.26514604687690735},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.16331037878990173},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.14334020018577576},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.12449005246162415},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08892330527305603}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/vlsitechnologyandcir57934.2023.10185292","is_oa":false,"landing_page_url":"https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185292","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1969818692","https://openalex.org/W1978810462","https://openalex.org/W2031900316","https://openalex.org/W2051481771","https://openalex.org/W2057262322","https://openalex.org/W2061643439","https://openalex.org/W2103504335","https://openalex.org/W2312533315","https://openalex.org/W3002409047","https://openalex.org/W3098613082","https://openalex.org/W3117971052","https://openalex.org/W4200166621","https://openalex.org/W4212902471","https://openalex.org/W4280495565","https://openalex.org/W4292968072","https://openalex.org/W4297310199"],"related_works":["https://openalex.org/W2017189043","https://openalex.org/W2045648267","https://openalex.org/W1998534931","https://openalex.org/W4248115860","https://openalex.org/W4304136734","https://openalex.org/W2612856585","https://openalex.org/W1969537910","https://openalex.org/W1994690009","https://openalex.org/W2326599158","https://openalex.org/W2057483829"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"we":[3],"systematically":[4],"studied":[5],"the":[6,119,147,156,160],"temperature":[7,32],"dependent":[8,131],"electrical":[9],"performance":[10],"of":[11,73,98,105,121],"atomic-layer-deposited":[12],"(ALD)":[13],"indium":[14],"oxide":[15],"$\\left(In_{2}":[16],"O_{3}\\right)$":[17],"transistors.":[18],"Both":[19],"enhancement-mode":[20],"(E-mode)":[21],"and":[22,68,86],"depletion-mode":[23],"(D-mode)":[24],"$In_{2}":[25,152],"O_{3}$":[26,153],"FETs":[27],"are":[28,139],"demonstrated":[29],"by":[30,124],"high":[31],"O":[33,125],"<inf":[34,126],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[35,56,127],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[36,128],"annealing":[37],"at":[38],"$400^{\\circ}":[39],"C$":[40],"with":[41,91],"maximum":[42],"drain":[43],"current":[44],"over":[45],"$2":[46],"mA/":[47],"\\mu":[48],"m$,":[49],"on/off":[50],"ratio":[51],"up":[52],"to":[53,118],"10":[54],"<sup":[55],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">9</sup>":[57],",":[58],"highest":[59],"mobility":[60],"beyond":[61],"$100":[62],"cm^{2}":[63],"/":[64],"V":[65,107],"\\cdot":[66],"s$":[67],"lowest":[69],"subthreshold":[70],"swing":[71],"(SS)":[72],"70":[74],"mV/dec.":[75],"High":[76],"threshold":[77,93],"voltage":[78,94],"$\\left(V_{T}\\right)$":[79],"stability":[80,114],"is":[81],"achieved":[82],"in":[83,164],"both":[84],"negative":[85],"positive":[87],"bias":[88,103,113,137],"stress":[89,104],"conditions":[90],"minimum":[92],"shift":[95],"$\\left(\\Delta":[96],"V_{T}\\right)$":[97],"-18":[99],"mV":[100],"under":[101],"gate":[102],"-2":[106],"for":[108],"5000":[109],"s.":[110],"Such":[111],"ultrahigh":[112],"can":[115],"be":[116],"attributed":[117],"passivation":[120],"oxygen":[122],"vacancies":[123],"annealing.":[129],"Temperature":[130],"I-V":[132],"characteristics":[133],"as":[134,136,159],"well":[135],"instability":[138],"also":[140],"comprehensively":[141],"investigated.":[142],"The":[143],"optimized":[144],"reliability":[145],"indicates":[146],"back-end-of-line":[148],"(BEOL)":[149],"compatible":[150],"ALD":[151],"does":[154],"offer":[155],"great":[157],"potential":[158],"novel":[161],"competitive":[162],"channel":[163],"monolithic":[165],"3":[166],"D":[167],"integration.":[168]},"counts_by_year":[{"year":2026,"cited_by_count":4},{"year":2025,"cited_by_count":13},{"year":2024,"cited_by_count":10}],"updated_date":"2026-04-03T22:45:19.894376","created_date":"2025-10-10T00:00:00"}