{"id":"https://openalex.org/W3188184495","doi":"https://doi.org/10.23919/mixdes52406.2021.9497608","title":"GaN-AlGaN on SiC pHEMT Design for a Digital Radio Frequency Memory","display_name":"GaN-AlGaN on SiC pHEMT Design for a Digital Radio Frequency Memory","publication_year":2021,"publication_date":"2021-06-24","ids":{"openalex":"https://openalex.org/W3188184495","doi":"https://doi.org/10.23919/mixdes52406.2021.9497608","mag":"3188184495"},"language":"en","primary_location":{"id":"doi:10.23919/mixdes52406.2021.9497608","is_oa":false,"landing_page_url":"https://doi.org/10.23919/mixdes52406.2021.9497608","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 28th International Conference on Mixed Design of Integrated Circuits and System","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5075190279","display_name":"Christina Lessi","orcid":null},"institutions":[{"id":"https://openalex.org/I174458059","display_name":"National Technical University of Athens","ror":"https://ror.org/03cx6bg69","country_code":"GR","type":"education","lineage":["https://openalex.org/I174458059"]}],"countries":["GR"],"is_corresponding":true,"raw_author_name":"Christina C. Lessi","raw_affiliation_strings":["National Technical University of Athens, Greece"],"affiliations":[{"raw_affiliation_string":"National Technical University of Athens, Greece","institution_ids":["https://openalex.org/I174458059"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077543498","display_name":"Vasileios T. Vallindras","orcid":null},"institutions":[{"id":"https://openalex.org/I152516533","display_name":"Hellenic Naval Academy","ror":"https://ror.org/02y84bs66","country_code":"GR","type":"education","lineage":["https://openalex.org/I152516533"]}],"countries":["GR"],"is_corresponding":false,"raw_author_name":"Vasileios T. Vallindras","raw_affiliation_strings":["Hellenic Naval Academy, Piraeus, Greece"],"affiliations":[{"raw_affiliation_string":"Hellenic Naval Academy, Piraeus, Greece","institution_ids":["https://openalex.org/I152516533"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019805055","display_name":"Kleanthis V. Hadjisavva","orcid":null},"institutions":[{"id":"https://openalex.org/I152516533","display_name":"Hellenic Naval Academy","ror":"https://ror.org/02y84bs66","country_code":"GR","type":"education","lineage":["https://openalex.org/I152516533"]}],"countries":["GR"],"is_corresponding":false,"raw_author_name":"Kleanthis V. Hadjisavva","raw_affiliation_strings":["Hellenic Naval Academy, Piraeus, Greece"],"affiliations":[{"raw_affiliation_string":"Hellenic Naval Academy, Piraeus, Greece","institution_ids":["https://openalex.org/I152516533"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010625632","display_name":"Evangelia Karagianni","orcid":"https://orcid.org/0000-0003-0029-1410"},"institutions":[{"id":"https://openalex.org/I152516533","display_name":"Hellenic Naval Academy","ror":"https://ror.org/02y84bs66","country_code":"GR","type":"education","lineage":["https://openalex.org/I152516533"]}],"countries":["GR"],"is_corresponding":false,"raw_author_name":"Evangelia A. Karagianni","raw_affiliation_strings":["Hellenic Naval Academy, Piraeus, Greece"],"affiliations":[{"raw_affiliation_string":"Hellenic Naval Academy, Piraeus, Greece","institution_ids":["https://openalex.org/I152516533"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074291981","display_name":"G. Deligeorgis","orcid":"https://orcid.org/0000-0002-4339-4914"},"institutions":[{"id":"https://openalex.org/I8901234","display_name":"Foundation for Research and Technology Hellas","ror":"https://ror.org/052rphn09","country_code":"GR","type":"facility","lineage":["https://openalex.org/I8901234"]}],"countries":["GR"],"is_corresponding":false,"raw_author_name":"George Deligeorgis","raw_affiliation_strings":["Foundation for Research and Technology Hellas, Creta, Greece"],"affiliations":[{"raw_affiliation_string":"Foundation for Research and Technology Hellas, Creta, Greece","institution_ids":["https://openalex.org/I8901234"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006013791","display_name":"\u0410. \u0421\u0442\u0430\u0432\u0440\u0438\u043d\u0438\u0434\u0438\u0441","orcid":"https://orcid.org/0000-0003-2435-0403"},"institutions":[{"id":"https://openalex.org/I8901234","display_name":"Foundation for Research and Technology Hellas","ror":"https://ror.org/052rphn09","country_code":"GR","type":"facility","lineage":["https://openalex.org/I8901234"]}],"countries":["GR"],"is_corresponding":false,"raw_author_name":"Antonios Stavrinidis","raw_affiliation_strings":["Foundation for Research and Technology Hellas, Creta, Greece"],"affiliations":[{"raw_affiliation_string":"Foundation for Research and Technology Hellas, Creta, Greece","institution_ids":["https://openalex.org/I8901234"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103990800","display_name":"George Konstantinidis","orcid":null},"institutions":[{"id":"https://openalex.org/I8901234","display_name":"Foundation for Research and Technology Hellas","ror":"https://ror.org/052rphn09","country_code":"GR","type":"facility","lineage":["https://openalex.org/I8901234"]}],"countries":["GR"],"is_corresponding":false,"raw_author_name":"George Konstantinidis","raw_affiliation_strings":["Foundation for Research and Technology Hellas, Creta, Greece"],"affiliations":[{"raw_affiliation_string":"Foundation for Research and Technology Hellas, Creta, Greece","institution_ids":["https://openalex.org/I8901234"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063864718","display_name":"Athanasios D. Panagopoulos","orcid":"https://orcid.org/0000-0003-4716-3328"},"institutions":[{"id":"https://openalex.org/I174458059","display_name":"National Technical University of Athens","ror":"https://ror.org/03cx6bg69","country_code":"GR","type":"education","lineage":["https://openalex.org/I174458059"]}],"countries":["GR"],"is_corresponding":false,"raw_author_name":"Athanasios D. Panagopoulos","raw_affiliation_strings":["National Technical University of Athens, Greece"],"affiliations":[{"raw_affiliation_string":"National Technical University of Athens, Greece","institution_ids":["https://openalex.org/I174458059"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5075190279"],"corresponding_institution_ids":["https://openalex.org/I174458059"],"apc_list":null,"apc_paid":null,"fwci":0.1548,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.51007619,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":93},"biblio":{"volume":null,"issue":null,"first_page":"100","last_page":"103"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9962000250816345,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9911999702453613,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.9248132705688477},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.747880220413208},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7294520139694214},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7125412821769714},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"Gallium arsenide","score":0.6945298910140991},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.6489270925521851},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.6252548694610596},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.45597541332244873},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.42479878664016724},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.41707903146743774},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.38895297050476074},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15761679410934448},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.12277781963348389},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.10174143314361572}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.9248132705688477},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.747880220413208},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7294520139694214},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7125412821769714},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.6945298910140991},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.6489270925521851},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.6252548694610596},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.45597541332244873},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.42479878664016724},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.41707903146743774},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.38895297050476074},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15761679410934448},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.12277781963348389},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.10174143314361572},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/mixdes52406.2021.9497608","is_oa":false,"landing_page_url":"https://doi.org/10.23919/mixdes52406.2021.9497608","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 28th International Conference on Mixed Design of Integrated Circuits and System","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8299999833106995}],"awards":[],"funders":[{"id":"https://openalex.org/F4320335322","display_name":"European Regional Development Fund","ror":"https://ror.org/00k4n6c32"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W374253438","https://openalex.org/W2086199789","https://openalex.org/W2150237098","https://openalex.org/W2151616480","https://openalex.org/W2165941654","https://openalex.org/W2238278140","https://openalex.org/W2790559422","https://openalex.org/W2940092558","https://openalex.org/W2945696935","https://openalex.org/W3049551199","https://openalex.org/W6682265820","https://openalex.org/W6689567686","https://openalex.org/W6762533219","https://openalex.org/W6782122688"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W2250343992","https://openalex.org/W3043337507","https://openalex.org/W2559825181","https://openalex.org/W4377089489","https://openalex.org/W4388207625","https://openalex.org/W1975307200","https://openalex.org/W4220740305","https://openalex.org/W2466508933"],"abstract_inverted_index":{"High-electron-mobility":[0],"transistor":[1,50,128,140],"(HEMT)":[2],"is":[3,24,29,43,68,108,124,130,150],"a":[4,10,65,79,90,105],"type":[5],"of":[6,49,53,137],"FET":[7],"fabricated":[8,151],"with":[9,15],"junction":[11,36],"between":[12,123],"two":[13,113],"materials":[14],"different":[16],"band":[17],"gaps.":[18],"The":[19,75,127,133],"most":[20],"common":[21],"material":[22],"that":[23],"used":[25],"in":[26,46,110,122],"HEMT":[27],"fabrication":[28,51],"based":[30,70,143],"on":[31,71,144],"the":[32,47,54,72,84,112,117,120,125,138,145,153],"Gallium":[33,39],"Arsenide":[34],"hetero-":[35],"(GaAs-AlGaAs).":[37],"However,":[38],"Nitride":[40],"(GaN)":[41],"technology":[42],"entering":[44],"dynamically":[45],"area":[48],"because":[52],"high":[55],"currents'":[56],"control":[57],"by":[58,96],"using":[59,97],"low":[60],"voltages.":[61],"In":[62],"this":[63],"paper,":[64],"3D":[66],"design":[67],"presented":[69],"finger":[73],"topology.":[74],"heterojuction":[76],"(GaN-AlGaN)":[77],"creates":[78],"piezoelectric":[80],"polarization":[81],"and":[82,119,152],"so":[83,89],"two-dimensional":[85],"electron":[86],"gas":[87],"(2DEG),":[88],"full":[91],"pHEMT":[92],"model":[93,136],"was":[94,141],"designed":[95,109,139],"Advanced":[98],"Design":[99],"System":[100],"(ADS)":[101],"software.":[102],"More":[103],"specifically,":[104],"two-fingers":[106],"structure":[107,149],"which":[111],"exterior":[114],"fingers":[115],"are":[116,156],"source":[118],"one":[121],"drain.":[126],"size":[129],"160\u03bcm":[131],"length.":[132],"small":[134],"signal":[135],"created,":[142],"simulation":[146],"results.":[147],"This":[148],"measured":[154],"S-parameters":[155],"presented.":[157]},"counts_by_year":[{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}