{"id":"https://openalex.org/W2744781252","doi":"https://doi.org/10.23919/mixdes.2017.8005168","title":"Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs","display_name":"Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs","publication_year":2017,"publication_date":"2017-06-01","ids":{"openalex":"https://openalex.org/W2744781252","doi":"https://doi.org/10.23919/mixdes.2017.8005168","mag":"2744781252"},"language":"en","primary_location":{"id":"doi:10.23919/mixdes.2017.8005168","is_oa":false,"landing_page_url":"https://doi.org/10.23919/mixdes.2017.8005168","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 MIXDES - 24th International Conference \"Mixed Design of Integrated Circuits and Systems","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110486124","display_name":"Michael Graef","orcid":null},"institutions":[{"id":"https://openalex.org/I45155027","display_name":"Technische Hochschule Mittelhessen","ror":"https://ror.org/02qdc9985","country_code":"DE","type":"education","lineage":["https://openalex.org/I45155027"]},{"id":"https://openalex.org/I55952717","display_name":"Universitat Rovira i Virgili","ror":"https://ror.org/00g5sqv46","country_code":"ES","type":"education","lineage":["https://openalex.org/I55952717"]}],"countries":["DE","ES"],"is_corresponding":false,"raw_author_name":"Michael Graef","raw_affiliation_strings":["Competence Centre for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany","DEEEA, Universitat Rovira i Virgili, Tarragona, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Competence Centre for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany","institution_ids":["https://openalex.org/I45155027"]},{"raw_affiliation_string":"DEEEA, Universitat Rovira i Virgili, Tarragona, Spain","institution_ids":["https://openalex.org/I55952717"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005978586","display_name":"Franziska Hain","orcid":"https://orcid.org/0000-0002-5097-2751"},"institutions":[{"id":"https://openalex.org/I45155027","display_name":"Technische Hochschule Mittelhessen","ror":"https://ror.org/02qdc9985","country_code":"DE","type":"education","lineage":["https://openalex.org/I45155027"]},{"id":"https://openalex.org/I55952717","display_name":"Universitat Rovira i Virgili","ror":"https://ror.org/00g5sqv46","country_code":"ES","type":"education","lineage":["https://openalex.org/I55952717"]}],"countries":["DE","ES"],"is_corresponding":false,"raw_author_name":"Franziska Hain","raw_affiliation_strings":["Competence Centre for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany","DEEEA, Universitat Rovira i Virgili, Tarragona, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Competence Centre for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany","institution_ids":["https://openalex.org/I45155027"]},{"raw_affiliation_string":"DEEEA, Universitat Rovira i Virgili, Tarragona, Spain","institution_ids":["https://openalex.org/I55952717"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042542306","display_name":"Fabian Hosenfeld","orcid":null},"institutions":[{"id":"https://openalex.org/I45155027","display_name":"Technische Hochschule Mittelhessen","ror":"https://ror.org/02qdc9985","country_code":"DE","type":"education","lineage":["https://openalex.org/I45155027"]},{"id":"https://openalex.org/I55952717","display_name":"Universitat Rovira i Virgili","ror":"https://ror.org/00g5sqv46","country_code":"ES","type":"education","lineage":["https://openalex.org/I55952717"]}],"countries":["DE","ES"],"is_corresponding":false,"raw_author_name":"Fabian Hosenfeld","raw_affiliation_strings":["Competence Centre for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany","DEEEA, Universitat Rovira i Virgili, Tarragona, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Competence Centre for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany","institution_ids":["https://openalex.org/I45155027"]},{"raw_affiliation_string":"DEEEA, Universitat Rovira i Virgili, Tarragona, Spain","institution_ids":["https://openalex.org/I55952717"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012425056","display_name":"Fabian H\u00f6rst","orcid":"https://orcid.org/0000-0002-3784-8916"},"institutions":[{"id":"https://openalex.org/I45155027","display_name":"Technische Hochschule Mittelhessen","ror":"https://ror.org/02qdc9985","country_code":"DE","type":"education","lineage":["https://openalex.org/I45155027"]},{"id":"https://openalex.org/I55952717","display_name":"Universitat Rovira i Virgili","ror":"https://ror.org/00g5sqv46","country_code":"ES","type":"education","lineage":["https://openalex.org/I55952717"]}],"countries":["DE","ES"],"is_corresponding":false,"raw_author_name":"Fabian Horst","raw_affiliation_strings":["Competence Centre for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany","DEEEA, Universitat Rovira i Virgili, Tarragona, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Competence Centre for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany","institution_ids":["https://openalex.org/I45155027"]},{"raw_affiliation_string":"DEEEA, Universitat Rovira i Virgili, Tarragona, Spain","institution_ids":["https://openalex.org/I55952717"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036880422","display_name":"Atieh Farokhnejad","orcid":"https://orcid.org/0000-0002-8055-2993"},"institutions":[{"id":"https://openalex.org/I45155027","display_name":"Technische Hochschule Mittelhessen","ror":"https://ror.org/02qdc9985","country_code":"DE","type":"education","lineage":["https://openalex.org/I45155027"]},{"id":"https://openalex.org/I55952717","display_name":"Universitat Rovira i Virgili","ror":"https://ror.org/00g5sqv46","country_code":"ES","type":"education","lineage":["https://openalex.org/I55952717"]}],"countries":["DE","ES"],"is_corresponding":false,"raw_author_name":"Atieh Farokhnejad","raw_affiliation_strings":["Competence Centre for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany","DEEEA, Universitat Rovira i Virgili, Tarragona, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Competence Centre for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany","institution_ids":["https://openalex.org/I45155027"]},{"raw_affiliation_string":"DEEEA, Universitat Rovira i Virgili, Tarragona, Spain","institution_ids":["https://openalex.org/I55952717"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030860440","display_name":"Benjam\u0131\u0301n I\u00f1\u0131\u0301guez","orcid":"https://orcid.org/0000-0002-6504-7980"},"institutions":[{"id":"https://openalex.org/I55952717","display_name":"Universitat Rovira i Virgili","ror":"https://ror.org/00g5sqv46","country_code":"ES","type":"education","lineage":["https://openalex.org/I55952717"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Benjamin Iniguez","raw_affiliation_strings":["DEEEA, Universitat Rovira i Virgili, Tarragona, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DEEEA, Universitat Rovira i Virgili, Tarragona, Spain","institution_ids":["https://openalex.org/I55952717"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5025487651","display_name":"Alexander Kloes","orcid":"https://orcid.org/0000-0002-6485-1512"},"institutions":[{"id":"https://openalex.org/I45155027","display_name":"Technische Hochschule Mittelhessen","ror":"https://ror.org/02qdc9985","country_code":"DE","type":"education","lineage":["https://openalex.org/I45155027"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Alexander Kloes","raw_affiliation_strings":["Competence Centre for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Competence Centre for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany","institution_ids":["https://openalex.org/I45155027"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.2924,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.60025526,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"127","last_page":"131"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/discretization","display_name":"Discretization","score":0.6644356846809387},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6514451503753662},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.5719923973083496},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.5712257027626038},{"id":"https://openalex.org/keywords/dimension","display_name":"Dimension (graph theory)","score":0.48674535751342773},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.47070738673210144},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4567490816116333},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.45363670587539673},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4329879879951477},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.42513740062713623},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.41957318782806396},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.39210745692253113},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3519418239593506},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.34742316603660583},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2357071042060852},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.19132721424102783}],"concepts":[{"id":"https://openalex.org/C73000952","wikidata":"https://www.wikidata.org/wiki/Q17007827","display_name":"Discretization","level":2,"score":0.6644356846809387},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6514451503753662},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5719923973083496},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.5712257027626038},{"id":"https://openalex.org/C33676613","wikidata":"https://www.wikidata.org/wiki/Q13415176","display_name":"Dimension (graph theory)","level":2,"score":0.48674535751342773},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.47070738673210144},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4567490816116333},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.45363670587539673},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4329879879951477},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.42513740062713623},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.41957318782806396},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.39210745692253113},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3519418239593506},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.34742316603660583},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2357071042060852},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.19132721424102783},{"id":"https://openalex.org/C202444582","wikidata":"https://www.wikidata.org/wiki/Q837863","display_name":"Pure mathematics","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.0},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/mixdes.2017.8005168","is_oa":false,"landing_page_url":"https://doi.org/10.23919/mixdes.2017.8005168","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 MIXDES - 24th International Conference \"Mixed Design of Integrated Circuits and Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320316520","display_name":"Keysight Technologies","ror":"https://ror.org/02903cd17"},{"id":"https://openalex.org/F4320321114","display_name":"Bundesministerium f\u00fcr Bildung und Forschung","ror":"https://ror.org/04pz7b180"},{"id":"https://openalex.org/F4320321837","display_name":"Ministerio de Econom\u00eda y Competitividad","ror":"https://ror.org/034900433"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W618403339","https://openalex.org/W1966797259","https://openalex.org/W2047509602","https://openalex.org/W2069680115","https://openalex.org/W2099239102","https://openalex.org/W2133328603","https://openalex.org/W2148947249","https://openalex.org/W2306285808"],"related_works":["https://openalex.org/W1977042749","https://openalex.org/W2542162669","https://openalex.org/W2042881279","https://openalex.org/W2121451436","https://openalex.org/W2115248544","https://openalex.org/W1608296848","https://openalex.org/W2975003965","https://openalex.org/W2049062674","https://openalex.org/W2492111440","https://openalex.org/W4297923311"],"abstract_inverted_index":{"The":[0,72,122],"massive":[1],"scaling":[2],"of":[3,41,58,62,109],"semiconducting":[4],"devices":[5,26,65],"is":[6,66,103],"still":[7],"the":[8,39,47,56,85,110,130],"most":[9],"favorable":[10],"way":[11],"to":[12,16,21,31],"enhance":[13],"device":[14,48],"performance":[15],"this":[17,36,77,90],"day.":[18],"This":[19],"leads":[20],"emerging":[22,88],"ultra":[23],"low":[24],"power":[25],"with":[27,129],"channel":[28],"lengths":[29],"down":[30],"14":[32],"nm":[33],"[1].":[34],"In":[35],"small":[37],"dimensions":[38],"discretization":[40,96],"doping":[42,95],"profiles":[43,128],"gains":[44],"influence":[45],"on":[46,74,84],"current,":[49],"namely":[50],"random":[51],"dopant":[52],"fluctuations":[53],"(RDF).":[54],"Therefore,":[55],"topic":[57],"variability":[59,86],"in":[60,76,89],"terms":[61],"fabricating":[63],"these":[64],"getting":[67],"more":[68,70],"and":[69,97],"important.":[71],"simulate":[73],"analysis":[75],"paper":[78],"should":[79],"give":[80],"a":[81],"deeper":[82],"insight":[83],"problems":[87],"new":[91],"dimension":[92],"regimes":[93],"regarding":[94],"fabrication":[98],"tolerances.":[99],"An":[100],"improved":[101],"model":[102],"introduced":[104],"which":[105],"allows":[106],"an":[107],"estimation":[108],"RDF-based":[111],"threshold":[112],"voltage":[113],"deviation":[114],"\u03c3v":[115],"<inf":[116],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[117],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">th</inf>":[118],"for":[119],"MOSFET":[120],"devices.":[121],"simulations":[123],"are":[124],"done":[125],"using":[126],"randomized":[127],"FEM-Simulator":[131],"TCAD":[132],"Sentaurus.":[133]},"counts_by_year":[{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}