{"id":"https://openalex.org/W4382562056","doi":"https://doi.org/10.23919/mipro57284.2023.10159764","title":"Back-Hopping in Ultra-Scaled MRAM Cells","display_name":"Back-Hopping in Ultra-Scaled MRAM Cells","publication_year":2023,"publication_date":"2023-05-22","ids":{"openalex":"https://openalex.org/W4382562056","doi":"https://doi.org/10.23919/mipro57284.2023.10159764"},"language":"en","primary_location":{"id":"doi:10.23919/mipro57284.2023.10159764","is_oa":false,"landing_page_url":"https://doi.org/10.23919/mipro57284.2023.10159764","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 46th MIPRO ICT and Electronics Convention (MIPRO)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5060787528","display_name":"Mario Bendra","orcid":"https://orcid.org/0000-0001-5994-2682"},"institutions":[{"id":"https://openalex.org/I4210105054","display_name":"Christian Doppler Laboratory for Thermoelectricity","ror":"https://ror.org/01cbw5x35","country_code":"AT","type":"facility","lineage":["https://openalex.org/I129774422","https://openalex.org/I145847075","https://openalex.org/I4210105054"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"M. Bendra","raw_affiliation_strings":["Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic","institution_ids":["https://openalex.org/I4210105054"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000588580","display_name":"Simone Fiorentini","orcid":"https://orcid.org/0000-0003-2982-7629"},"institutions":[{"id":"https://openalex.org/I4210105054","display_name":"Christian Doppler Laboratory for Thermoelectricity","ror":"https://ror.org/01cbw5x35","country_code":"AT","type":"facility","lineage":["https://openalex.org/I129774422","https://openalex.org/I145847075","https://openalex.org/I4210105054"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"S. Fiorentini","raw_affiliation_strings":["Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic","institution_ids":["https://openalex.org/I4210105054"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080949438","display_name":"Johannes Ender","orcid":"https://orcid.org/0000-0003-0972-0875"},"institutions":[{"id":"https://openalex.org/I4210105054","display_name":"Christian Doppler Laboratory for Thermoelectricity","ror":"https://ror.org/01cbw5x35","country_code":"AT","type":"facility","lineage":["https://openalex.org/I129774422","https://openalex.org/I145847075","https://openalex.org/I4210105054"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"J. Ender","raw_affiliation_strings":["Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic","institution_ids":["https://openalex.org/I4210105054"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032179143","display_name":"Roberto Lacerda de Orio","orcid":"https://orcid.org/0000-0002-9019-4835"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"R.L. de Orio","raw_affiliation_strings":["Institute for Microelectronics, TU Wien, Gußhausstraße 27-29,Wien,Austria,A-1040"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Microelectronics, TU Wien, Gußhausstraße 27-29,Wien,Austria,A-1040","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008470875","display_name":"Tom\u00e1\u0161 Had\u00e1mek","orcid":"https://orcid.org/0000-0001-8107-1318"},"institutions":[{"id":"https://openalex.org/I4210105054","display_name":"Christian Doppler Laboratory for Thermoelectricity","ror":"https://ror.org/01cbw5x35","country_code":"AT","type":"facility","lineage":["https://openalex.org/I129774422","https://openalex.org/I145847075","https://openalex.org/I4210105054"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"T. Had\u00e1mek","raw_affiliation_strings":["Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic","institution_ids":["https://openalex.org/I4210105054"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028668326","display_name":"Nils Petter J\u00f8rstad","orcid":"https://orcid.org/0000-0002-8499-1563"},"institutions":[{"id":"https://openalex.org/I4210105054","display_name":"Christian Doppler Laboratory for Thermoelectricity","ror":"https://ror.org/01cbw5x35","country_code":"AT","type":"facility","lineage":["https://openalex.org/I129774422","https://openalex.org/I145847075","https://openalex.org/I4210105054"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"N.P. J\u00f8rstad","raw_affiliation_strings":["Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic","institution_ids":["https://openalex.org/I4210105054"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060589672","display_name":"Bernhard Pruckner","orcid":"https://orcid.org/0000-0002-1765-0101"},"institutions":[{"id":"https://openalex.org/I4210105054","display_name":"Christian Doppler Laboratory for Thermoelectricity","ror":"https://ror.org/01cbw5x35","country_code":"AT","type":"facility","lineage":["https://openalex.org/I129774422","https://openalex.org/I145847075","https://openalex.org/I4210105054"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"B. Pruckner","raw_affiliation_strings":["Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic","institution_ids":["https://openalex.org/I4210105054"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043510129","display_name":"S. Selberherr","orcid":"https://orcid.org/0000-0002-5583-6177"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"S. Selberherr","raw_affiliation_strings":["Institute for Microelectronics, TU Wien, Gußhausstraße 27-29,Wien,Austria,A-1040"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Microelectronics, TU Wien, Gußhausstraße 27-29,Wien,Austria,A-1040","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021476186","display_name":"Wolfgang Goes","orcid":"https://orcid.org/0000-0001-9688-9921"},"institutions":[{"id":"https://openalex.org/I4210162115","display_name":"Silvaco (United Kingdom)","ror":"https://ror.org/05bs32x30","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210162115","https://openalex.org/I4405261486"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"W. Goes","raw_affiliation_strings":["Silvaco Europe Ltd., Compass Point, St Ives,Cambridge,United Kingdom,PE27 5JL"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Silvaco Europe Ltd., Compass Point, St Ives,Cambridge,United Kingdom,PE27 5JL","institution_ids":["https://openalex.org/I4210162115"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5023885831","display_name":"Viktor Sverdlov","orcid":"https://orcid.org/0000-0003-1736-6976"},"institutions":[{"id":"https://openalex.org/I4210105054","display_name":"Christian Doppler Laboratory for Thermoelectricity","ror":"https://ror.org/01cbw5x35","country_code":"AT","type":"facility","lineage":["https://openalex.org/I129774422","https://openalex.org/I145847075","https://openalex.org/I4210105054"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"V. Sverdlov","raw_affiliation_strings":["Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic","institution_ids":["https://openalex.org/I4210105054"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.801,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.79195916,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"159","last_page":"162"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9976999759674072,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9972000122070312,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.8391179442405701},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6968257427215576},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.6494889259338379},{"id":"https://openalex.org/keywords/ferromagnetism","display_name":"Ferromagnetism","score":0.5281940698623657},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.4785386025905609},{"id":"https://openalex.org/keywords/magnetic-anisotropy","display_name":"Magnetic anisotropy","score":0.476001113653183},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.46099331974983215},{"id":"https://openalex.org/keywords/anisotropy","display_name":"Anisotropy","score":0.459003210067749},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.45860111713409424},{"id":"https://openalex.org/keywords/magnetization","display_name":"Magnetization","score":0.41757529973983765},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.28455039858818054},{"id":"https://openalex.org/keywords/magnetic-field","display_name":"Magnetic field","score":0.2167987823486328},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.20761153101921082},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.17810940742492676},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.1701412796974182},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.11496895551681519}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.8391179442405701},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6968257427215576},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.6494889259338379},{"id":"https://openalex.org/C82217956","wikidata":"https://www.wikidata.org/wiki/Q184207","display_name":"Ferromagnetism","level":2,"score":0.5281940698623657},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.4785386025905609},{"id":"https://openalex.org/C32938098","wikidata":"https://www.wikidata.org/wiki/Q918398","display_name":"Magnetic anisotropy","level":4,"score":0.476001113653183},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.46099331974983215},{"id":"https://openalex.org/C85725439","wikidata":"https://www.wikidata.org/wiki/Q466686","display_name":"Anisotropy","level":2,"score":0.459003210067749},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.45860111713409424},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.41757529973983765},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.28455039858818054},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.2167987823486328},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.20761153101921082},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.17810940742492676},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.1701412796974182},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.11496895551681519},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/mipro57284.2023.10159764","is_oa":false,"landing_page_url":"https://doi.org/10.23919/mipro57284.2023.10159764","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 46th MIPRO ICT and Electronics Convention (MIPRO)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W2048344562","https://openalex.org/W2078297973","https://openalex.org/W2699022648","https://openalex.org/W2965634106","https://openalex.org/W3095958798","https://openalex.org/W3098120992","https://openalex.org/W3137612986","https://openalex.org/W3139001423","https://openalex.org/W4205230840","https://openalex.org/W4310787817","https://openalex.org/W4317792991","https://openalex.org/W4317815285","https://openalex.org/W6766249261"],"related_works":["https://openalex.org/W2790139797","https://openalex.org/W3146164987","https://openalex.org/W2086829516","https://openalex.org/W2141626281","https://openalex.org/W2472395098","https://openalex.org/W1651718342","https://openalex.org/W2151693621","https://openalex.org/W2030894598","https://openalex.org/W2290944666","https://openalex.org/W2081632276"],"abstract_inverted_index":{"The":[0],"development":[1],"of":[2,42,53,67,75,85,99,116,136],"advanced":[3],"magnetic":[4,134],"tunnel":[5],"junctions":[6],"with":[7],"a":[8,50,60],"footprint":[9],"in":[10,36,63,92,96],"the":[11,27,33,43,54,64,68,73,76,79,86,97,104,114,120,133,137],"single-digit":[12],"nanometer":[13],"range":[14],"can":[15],"be":[16],"achieved":[17],"using":[18],"an":[19],"elongated":[20],"multilayer":[21],"ferromagnetic":[22],"free":[23,69,77,88],"layer":[24,89],"structure.":[25],"Using":[26],"spin":[28],"drift-diffusion":[29],"model,":[30],"we":[31],"investigated":[32],"back-hopping":[34,55,117],"effect":[35],"ultra-scaled":[37],"STTMRAM":[38],"devices.":[39],"Unwanted":[40],"switching":[41,74,129],"middle-layer":[44],"structure":[45],"has":[46],"been":[47],"identified":[48],"as":[49],"possible":[51,124],"cause":[52],"effect,":[56],"which":[57],"leads":[58,107],"to":[59,102,108,119,126,131],"writing":[61],"error":[62],"magnetization":[65],"state":[66],"layers.":[70,138],"To":[71],"understand":[72],"layer,":[78],"torque":[80],"acting":[81],"on":[82],"both":[83],"parts":[84],"composite":[87],"is":[90,130],"studied":[91],"detail.":[93],"A":[94,123],"reduction":[95],"size":[98],"MRAM":[100],"components":[101],"increase":[103,132],"memory":[105],"density":[106],"lower":[109],"anisotropies":[110],"and":[111],"thus":[112],"increases":[113],"likelihood":[115],"due":[118],"presented":[121],"mechanism.":[122],"solution":[125],"avoid":[127],"erroneous":[128],"anisotropy":[135]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}