{"id":"https://openalex.org/W3203134847","doi":"https://doi.org/10.23919/mipro52101.2021.9596876","title":"Estimating OFF-state Leakage in Silicene Nanoribbon MOSFETs from Complex Bandstructure","display_name":"Estimating OFF-state Leakage in Silicene Nanoribbon MOSFETs from Complex Bandstructure","publication_year":2021,"publication_date":"2021-09-27","ids":{"openalex":"https://openalex.org/W3203134847","doi":"https://doi.org/10.23919/mipro52101.2021.9596876","mag":"3203134847"},"language":"en","primary_location":{"id":"doi:10.23919/mipro52101.2021.9596876","is_oa":false,"landing_page_url":"https://doi.org/10.23919/mipro52101.2021.9596876","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5082128661","display_name":"Mislav Mati\u0107","orcid":"https://orcid.org/0000-0001-9862-4310"},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":false,"raw_author_name":"M. Matic","raw_affiliation_strings":["Faculty of Electrical Engineering and Computing, Computational Nanoelectronics Group, Micro and Nano Electronics Laboratory, University of Zagreb, Zagreb, HR, Croatia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Electrical Engineering and Computing, Computational Nanoelectronics Group, Micro and Nano Electronics Laboratory, University of Zagreb, Zagreb, HR, Croatia","institution_ids":["https://openalex.org/I181343428"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090873443","display_name":"M. Leljak","orcid":null},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":false,"raw_author_name":"M. Leljak","raw_affiliation_strings":["Faculty of Electrical Engineering and Computing, Computational Nanoelectronics Group, Micro and Nano Electronics Laboratory, University of Zagreb, Zagreb, HR, Croatia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Electrical Engineering and Computing, Computational Nanoelectronics Group, Micro and Nano Electronics Laboratory, University of Zagreb, Zagreb, HR, Croatia","institution_ids":["https://openalex.org/I181343428"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5003032308","display_name":"Mirko Poljak","orcid":"https://orcid.org/0000-0001-7075-6688"},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":false,"raw_author_name":"M. Poljak","raw_affiliation_strings":["Faculty of Electrical Engineering and Computing, Computational Nanoelectronics Group, Micro and Nano Electronics Laboratory, University of Zagreb, Zagreb, HR, Croatia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Electrical Engineering and Computing, Computational Nanoelectronics Group, Micro and Nano Electronics Laboratory, University of Zagreb, Zagreb, HR, Croatia","institution_ids":["https://openalex.org/I181343428"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I181343428"],"apc_list":null,"apc_paid":null,"fwci":0.8647,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.71369558,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"85","last_page":"89"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10657","display_name":"Topological Materials and Phenomena","score":0.9975000023841858,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicene","display_name":"Silicene","score":0.9374510049819946},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.7058733701705933},{"id":"https://openalex.org/keywords/tight-binding","display_name":"Tight binding","score":0.6386392116546631},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.6333422660827637},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6275202035903931},{"id":"https://openalex.org/keywords/thermionic-emission","display_name":"Thermionic emission","score":0.6253701448440552},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6063663959503174},{"id":"https://openalex.org/keywords/attenuation","display_name":"Attenuation","score":0.5158923864364624},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.4277041256427765},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.34889358282089233},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.23615804314613342},{"id":"https://openalex.org/keywords/electronic-structure","display_name":"Electronic structure","score":0.23240283131599426},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1835748851299286},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.16651955246925354},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.109477698802948},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.07263484597206116}],"concepts":[{"id":"https://openalex.org/C2778602974","wikidata":"https://www.wikidata.org/wiki/Q4419229","display_name":"Silicene","level":3,"score":0.9374510049819946},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.7058733701705933},{"id":"https://openalex.org/C182063899","wikidata":"https://www.wikidata.org/wiki/Q902168","display_name":"Tight binding","level":3,"score":0.6386392116546631},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6333422660827637},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6275202035903931},{"id":"https://openalex.org/C143979616","wikidata":"https://www.wikidata.org/wiki/Q215259","display_name":"Thermionic emission","level":3,"score":0.6253701448440552},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6063663959503174},{"id":"https://openalex.org/C184652730","wikidata":"https://www.wikidata.org/wiki/Q2357982","display_name":"Attenuation","level":2,"score":0.5158923864364624},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.4277041256427765},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.34889358282089233},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.23615804314613342},{"id":"https://openalex.org/C86025842","wikidata":"https://www.wikidata.org/wiki/Q5358432","display_name":"Electronic structure","level":2,"score":0.23240283131599426},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1835748851299286},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.16651955246925354},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.109477698802948},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.07263484597206116},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/mipro52101.2021.9596876","is_oa":false,"landing_page_url":"https://doi.org/10.23919/mipro52101.2021.9596876","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G961616510","display_name":"Computational design of nanotransistors based on novel 2D materials","funder_award_id":"UIP-2019-04-3493","funder_id":"https://openalex.org/F4320322674","funder_display_name":"Hrvatska Zaklada za Znanost"}],"funders":[{"id":"https://openalex.org/F4320322674","display_name":"Hrvatska Zaklada za Znanost","ror":"https://ror.org/03n51vw80"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":26,"referenced_works":["https://openalex.org/W1903831306","https://openalex.org/W1912205236","https://openalex.org/W1966150059","https://openalex.org/W1996930412","https://openalex.org/W2007835701","https://openalex.org/W2018887089","https://openalex.org/W2022709083","https://openalex.org/W2039279334","https://openalex.org/W2051834590","https://openalex.org/W2055489095","https://openalex.org/W2063058865","https://openalex.org/W2072908244","https://openalex.org/W2077200368","https://openalex.org/W2098874598","https://openalex.org/W2119882629","https://openalex.org/W2211880409","https://openalex.org/W2337006774","https://openalex.org/W2413928346","https://openalex.org/W2530899161","https://openalex.org/W2910656420","https://openalex.org/W2983429008","https://openalex.org/W2989806725","https://openalex.org/W3013739960","https://openalex.org/W3041538694","https://openalex.org/W3080126755","https://openalex.org/W3089012421"],"related_works":["https://openalex.org/W2014002654","https://openalex.org/W1972079722","https://openalex.org/W2081844363","https://openalex.org/W2291379384","https://openalex.org/W4300434048","https://openalex.org/W2593194507","https://openalex.org/W2963363691","https://openalex.org/W3170642694","https://openalex.org/W3100179936","https://openalex.org/W2413928346"],"abstract_inverted_index":{"We":[0,30,69],"study":[1],"the":[2,24,33,39,84,88],"OFF-state":[3,40,80],"leakage":[4,41,81],"current":[5,57],"in":[6],"silicene":[7],"nanoribbon":[8,65],"(SiNR)":[9],"MOSFETs":[10,44],"using":[11,51],"atomistic":[12],"tight-binding":[13],"Hamiltonians.":[14],"Complex":[15],"band":[16],"structure":[17],"is":[18,28],"computed":[19],"for":[20,42,63,91],"these":[21],"devices":[22],"and":[23,35,53,59,67,93],"energy-dependent":[25],"tunneling":[26,34],"attenuation":[27,60],"analyzed.":[29],"investigate":[31],"both":[32],"thermionic":[36],"components":[37,58],"of":[38],"SiNR":[43,76],"with":[45],"channel":[46],"lengths":[47],"under":[48],"15":[49],"nm,":[50],"under-the-barrier":[52],"top-of-the-barrier":[54],"models.":[55],"The":[56],"are":[61],"investigated":[62],"various":[64],"widths":[66],"lengths.":[68],"report":[70],"a":[71],"limited":[72],"design":[73],"space":[74],"where":[75],"dimensions":[77],"provide":[78],"acceptable":[79],"according":[82],"to":[83],"goals":[85],"set":[86],"by":[87],"International":[89],"Roadmap":[90],"Devices":[92],"Systems":[94],"(IRDS).":[95]},"counts_by_year":[{"year":2023,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}