{"id":"https://openalex.org/W3090596422","doi":"https://doi.org/10.23919/mipro48935.2020.9245332","title":"On the modelling of interface roughness scattering in AlGaN/GaN heterostructures","display_name":"On the modelling of interface roughness scattering in AlGaN/GaN heterostructures","publication_year":2020,"publication_date":"2020-09-28","ids":{"openalex":"https://openalex.org/W3090596422","doi":"https://doi.org/10.23919/mipro48935.2020.9245332","mag":"3090596422"},"language":"en","primary_location":{"id":"doi:10.23919/mipro48935.2020.9245332","is_oa":false,"landing_page_url":"https://doi.org/10.23919/mipro48935.2020.9245332","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5019702716","display_name":"I. Berdalovi\u0107","orcid":"https://orcid.org/0000-0003-0514-2326"},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":true,"raw_author_name":"Ivan Berdalovic","raw_affiliation_strings":["Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia"],"affiliations":[{"raw_affiliation_string":"Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia","institution_ids":["https://openalex.org/I181343428"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003032308","display_name":"Mirko Poljak","orcid":"https://orcid.org/0000-0001-7075-6688"},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":false,"raw_author_name":"Mirko Poljak","raw_affiliation_strings":["Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia"],"affiliations":[{"raw_affiliation_string":"Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia","institution_ids":["https://openalex.org/I181343428"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5061642935","display_name":"Tomislav Suligoj","orcid":null},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":false,"raw_author_name":"Tomislav Suligoj","raw_affiliation_strings":["Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia"],"affiliations":[{"raw_affiliation_string":"Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia","institution_ids":["https://openalex.org/I181343428"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5019702716"],"corresponding_institution_ids":["https://openalex.org/I181343428"],"apc_list":null,"apc_paid":null,"fwci":0.4611,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.6306733,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"22","last_page":"27"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/scattering","display_name":"Scattering","score":0.8133182525634766},{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.8036544322967529},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7280981540679932},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.6240485310554504},{"id":"https://openalex.org/keywords/surface-finish","display_name":"Surface finish","score":0.5590255856513977},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5244964957237244},{"id":"https://openalex.org/keywords/surface-roughness","display_name":"Surface roughness","score":0.5223152041435242},{"id":"https://openalex.org/keywords/electron-mobility","display_name":"Electron mobility","score":0.4955040216445923},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.4338320195674896},{"id":"https://openalex.org/keywords/barrier-layer","display_name":"Barrier layer","score":0.41480833292007446},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.27311575412750244},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.19969442486763},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.16340681910514832},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11839604377746582},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.10511457920074463}],"concepts":[{"id":"https://openalex.org/C191486275","wikidata":"https://www.wikidata.org/wiki/Q210028","display_name":"Scattering","level":2,"score":0.8133182525634766},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.8036544322967529},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7280981540679932},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.6240485310554504},{"id":"https://openalex.org/C71039073","wikidata":"https://www.wikidata.org/wiki/Q3439090","display_name":"Surface finish","level":2,"score":0.5590255856513977},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5244964957237244},{"id":"https://openalex.org/C107365816","wikidata":"https://www.wikidata.org/wiki/Q114817","display_name":"Surface roughness","level":2,"score":0.5223152041435242},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.4955040216445923},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.4338320195674896},{"id":"https://openalex.org/C2779833192","wikidata":"https://www.wikidata.org/wiki/Q17015866","display_name":"Barrier layer","level":3,"score":0.41480833292007446},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.27311575412750244},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.19969442486763},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16340681910514832},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11839604377746582},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.10511457920074463}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/mipro48935.2020.9245332","is_oa":false,"landing_page_url":"https://doi.org/10.23919/mipro48935.2020.9245332","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.41999998688697815,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":29,"referenced_works":["https://openalex.org/W281156136","https://openalex.org/W573490046","https://openalex.org/W1832004357","https://openalex.org/W1971689042","https://openalex.org/W1973249275","https://openalex.org/W1977347956","https://openalex.org/W1982150375","https://openalex.org/W1989210356","https://openalex.org/W1994598449","https://openalex.org/W2006582638","https://openalex.org/W2007930334","https://openalex.org/W2012655250","https://openalex.org/W2019180289","https://openalex.org/W2034427507","https://openalex.org/W2051546608","https://openalex.org/W2076507752","https://openalex.org/W2080857848","https://openalex.org/W2086658993","https://openalex.org/W2088321119","https://openalex.org/W2101296431","https://openalex.org/W2113488710","https://openalex.org/W2134777370","https://openalex.org/W2160927449","https://openalex.org/W2277284435","https://openalex.org/W2403913918","https://openalex.org/W2806927876","https://openalex.org/W2991649693","https://openalex.org/W3139836734","https://openalex.org/W4238618429"],"related_works":["https://openalex.org/W1515161531","https://openalex.org/W2921865011","https://openalex.org/W1631058538","https://openalex.org/W4224063687","https://openalex.org/W4379114818","https://openalex.org/W4378782977","https://openalex.org/W2055819327","https://openalex.org/W4221051311","https://openalex.org/W2004873410","https://openalex.org/W2059842194"],"abstract_inverted_index":{"AlGaN/GaN":[0,81],"heterostructures":[1],"are":[2,117],"attractive":[3],"for":[4,77,134],"high-power":[5],"radiofrequency":[6],"applications":[7],"due":[8],"to":[9,30,44,126,131],"the":[10,16,47,59,86,94,114,128,138,149,152,173,181],"wide":[11],"bandgap":[12],"of":[13,19,41,88,112,143,155],"GaN":[14],"and":[15,21,34,65,109],"high":[17,31,35,159],"values":[18,105],"spontaneous":[20],"piezoelectric":[22],"polarisation":[23],"in":[24,50,80,137,141,162],"such":[25],"material":[26],"systems,":[27],"which":[28],"lead":[29],"breakdown":[32],"voltages":[33],"2D":[36],"carrier":[37,66],"concentrations.":[38,67],"It":[39],"is":[40,99,124,166],"particular":[42],"interest":[43],"accurately":[45],"model":[46,123],"2DEG":[48],"mobilities":[49],"these":[51],"structures,":[52],"as":[53],"different":[54,63,110,135],"scattering":[55,92,116,122,175],"mechanisms":[56],"can":[57],"limit":[58],"total":[60],"mobility":[61,79,104,156],"at":[62,148],"temperatures":[64],"In":[68],"this":[69],"paper,":[70],"we":[71],"present":[72],"a":[73,144,158],"semi-classical":[74],"modelling":[75,113],"framework":[76,98],"low-field":[78],"heterostructures,":[82],"focussing":[83],"especially":[84],"on":[85,93,180],"impact":[87],"interface":[89],"roughness":[90,182],"(IFR)":[91],"low-temperature":[95],"mobility.":[96],"The":[97],"validated":[100],"by":[101],"comparing":[102],"calculated":[103],"with":[106,157,169],"experimental":[107],"data,":[108],"ways":[111],"IFR":[115,121,170],"investigated.":[118],"A":[119],"non-linear":[120],"used":[125],"obtain":[127],"best":[129,167],"match":[130],"measured":[132],"data":[133],"Al-contents":[136],"AlGaN":[139],"layer":[140],"case":[142],"low":[145],"potential":[146,160],"barrier":[147,161],"heterointerface,":[150],"while":[151],"temperature":[153],"dependence":[154],"an":[163],"AlGaN/AlN/GaN":[164],"system":[165],"matched":[168],"models":[171],"where":[172],"squared":[174],"matrix":[176],"elements":[177],"depend":[178],"linearly":[179],"power":[183],"spectrum.":[184]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}