{"id":"https://openalex.org/W2735031701","doi":"https://doi.org/10.23919/mipro.2017.7973390","title":"Flicker noise in AlGaAs/GaAs of high electron mobility heterostructure field-effect transistor at cryogenic temperature","display_name":"Flicker noise in AlGaAs/GaAs of high electron mobility heterostructure field-effect transistor at cryogenic temperature","publication_year":2017,"publication_date":"2017-05-01","ids":{"openalex":"https://openalex.org/W2735031701","doi":"https://doi.org/10.23919/mipro.2017.7973390","mag":"2735031701"},"language":"en","primary_location":{"id":"doi:10.23919/mipro.2017.7973390","is_oa":false,"landing_page_url":"https://doi.org/10.23919/mipro.2017.7973390","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5078003194","display_name":"Souheil Mouetsi","orcid":"https://orcid.org/0000-0002-4411-1103"},"institutions":[{"id":"https://openalex.org/I3132180716","display_name":"Larbi Ben M'hidi University of Oum El Bouaghi","ror":"https://ror.org/0034tbg85","country_code":"DZ","type":"education","lineage":["https://openalex.org/I3132180716"]}],"countries":["DZ"],"is_corresponding":true,"raw_author_name":"Souheil Mouetsi","raw_affiliation_strings":["Laboratory of active components and materials, University Larbi Ben M'hidi, Oum El Bouaghi, Algeria"],"affiliations":[{"raw_affiliation_string":"Laboratory of active components and materials, University Larbi Ben M'hidi, Oum El Bouaghi, Algeria","institution_ids":["https://openalex.org/I3132180716"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060621170","display_name":"Foudil Zouach","orcid":null},"institutions":[{"id":"https://openalex.org/I3132180716","display_name":"Larbi Ben M'hidi University of Oum El Bouaghi","ror":"https://ror.org/0034tbg85","country_code":"DZ","type":"education","lineage":["https://openalex.org/I3132180716"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"Foudil Zouach","raw_affiliation_strings":["Department of electrical engineering, University Larbi Ben M'hidi, Oum El Bouaghi, Algeria"],"affiliations":[{"raw_affiliation_string":"Department of electrical engineering, University Larbi Ben M'hidi, Oum El Bouaghi, Algeria","institution_ids":["https://openalex.org/I3132180716"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5085422449","display_name":"Rechem Djamil","orcid":null},"institutions":[{"id":"https://openalex.org/I3132180716","display_name":"Larbi Ben M'hidi University of Oum El Bouaghi","ror":"https://ror.org/0034tbg85","country_code":"DZ","type":"education","lineage":["https://openalex.org/I3132180716"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"Djamil Rechem","raw_affiliation_strings":["Laboratory of active components and materials, University Larbi Ben M'hidi, Oum El Bouaghi, Algeria"],"affiliations":[{"raw_affiliation_string":"Laboratory of active components and materials, University Larbi Ben M'hidi, Oum El Bouaghi, Algeria","institution_ids":["https://openalex.org/I3132180716"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5078003194"],"corresponding_institution_ids":["https://openalex.org/I3132180716"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.07666367,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"53","last_page":"56"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/flicker-noise","display_name":"Flicker noise","score":0.9362590312957764},{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.6184118390083313},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6156022548675537},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.6030514240264893},{"id":"https://openalex.org/keywords/atmospheric-temperature-range","display_name":"Atmospheric temperature range","score":0.5973911285400391},{"id":"https://openalex.org/keywords/electron-mobility","display_name":"Electron mobility","score":0.542286217212677},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5394348502159119},{"id":"https://openalex.org/keywords/noise-power","display_name":"Noise power","score":0.5192728042602539},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4888696074485779},{"id":"https://openalex.org/keywords/noise-temperature","display_name":"Noise temperature","score":0.4747845530509949},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.4620937407016754},{"id":"https://openalex.org/keywords/shot-noise","display_name":"Shot noise","score":0.4277132451534271},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.42311418056488037},{"id":"https://openalex.org/keywords/saturation-velocity","display_name":"Saturation velocity","score":0.4112468957901001},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3996802866458893},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.29801470041275024},{"id":"https://openalex.org/keywords/phase-noise","display_name":"Phase noise","score":0.28882721066474915},{"id":"https://openalex.org/keywords/noise-figure","display_name":"Noise figure","score":0.25385797023773193},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.1508539915084839},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.13554731011390686},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.061980485916137695}],"concepts":[{"id":"https://openalex.org/C113873419","wikidata":"https://www.wikidata.org/wiki/Q1410810","display_name":"Flicker noise","level":5,"score":0.9362590312957764},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.6184118390083313},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6156022548675537},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.6030514240264893},{"id":"https://openalex.org/C39353612","wikidata":"https://www.wikidata.org/wiki/Q5283759","display_name":"Atmospheric temperature range","level":2,"score":0.5973911285400391},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.542286217212677},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5394348502159119},{"id":"https://openalex.org/C203234222","wikidata":"https://www.wikidata.org/wiki/Q2133519","display_name":"Noise power","level":3,"score":0.5192728042602539},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4888696074485779},{"id":"https://openalex.org/C52660251","wikidata":"https://www.wikidata.org/wiki/Q17083145","display_name":"Noise temperature","level":3,"score":0.4747845530509949},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4620937407016754},{"id":"https://openalex.org/C72659945","wikidata":"https://www.wikidata.org/wiki/Q1503574","display_name":"Shot noise","level":3,"score":0.4277132451534271},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.42311418056488037},{"id":"https://openalex.org/C151431374","wikidata":"https://www.wikidata.org/wiki/Q7426597","display_name":"Saturation velocity","level":4,"score":0.4112468957901001},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3996802866458893},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.29801470041275024},{"id":"https://openalex.org/C89631360","wikidata":"https://www.wikidata.org/wiki/Q1428766","display_name":"Phase noise","level":2,"score":0.28882721066474915},{"id":"https://openalex.org/C112806910","wikidata":"https://www.wikidata.org/wiki/Q746825","display_name":"Noise figure","level":4,"score":0.25385797023773193},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.1508539915084839},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.13554731011390686},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.061980485916137695},{"id":"https://openalex.org/C94915269","wikidata":"https://www.wikidata.org/wiki/Q1834857","display_name":"Detector","level":2,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/mipro.2017.7973390","is_oa":false,"landing_page_url":"https://doi.org/10.23919/mipro.2017.7973390","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.800000011920929,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1965692061","https://openalex.org/W1968895062","https://openalex.org/W1980731911","https://openalex.org/W2008434238","https://openalex.org/W2010848624","https://openalex.org/W2012893855","https://openalex.org/W2028415835","https://openalex.org/W2039875347","https://openalex.org/W2042237942","https://openalex.org/W2060201382","https://openalex.org/W2072680704","https://openalex.org/W2090974423","https://openalex.org/W2092389542","https://openalex.org/W2109537619","https://openalex.org/W2121470932","https://openalex.org/W2144423609","https://openalex.org/W2154435017","https://openalex.org/W3100747610"],"related_works":["https://openalex.org/W2143992133","https://openalex.org/W2065061587","https://openalex.org/W1963520637","https://openalex.org/W1976870282","https://openalex.org/W2071435018","https://openalex.org/W286594222","https://openalex.org/W3161884612","https://openalex.org/W2134436426","https://openalex.org/W2079359317","https://openalex.org/W2014396867"],"abstract_inverted_index":{"In":[0,25,65],"this":[1,26,66],"paper,":[2],"Low":[3],"frequency":[4],"noise":[5,46,50,56,62,72,128],"measurements":[6],"at":[7,34,111,129],"cryogenic":[8,130],"temperature":[9,89,93,131],"below":[10],"120":[11],"K":[12],"in":[13],"AlGaAs/GaAs":[14],"of":[15,28,48,105,125],"high":[16],"electron":[17,107],"mobility":[18,110,135],"heterostructure":[19],"field-effect":[20],"transistor":[21],"(HFET)":[22],"was":[23],"studied.":[24],"range":[27,94],"temperature,":[29],"the":[30,44,68,82,91,103,114,122,126,133],"samples":[31],"are":[32,63,75],"biased":[33],"very":[35],"low":[36,112],"voltage":[37],"to":[38,97,119],"avoid":[39],"velocity":[40],"saturation.":[41],"Assuming":[42],"that":[43,78,121],"different":[45],"sources":[47],"power":[49],"spectral":[51],"density":[52],"such":[53],"as":[54],"flicker":[55,71,127],"(1/f),":[57],"generation-recombination":[58],"(G-R)":[59],"noise,":[60],"thermal":[61],"independent.":[64],"work,":[67],"parameters":[69],"characterizing":[70],"(\u03b3,":[73],"\u03b1H)":[74],"studied,":[76],"noting":[77],"\u03b3":[79],"varies":[80],"around":[81],"unity":[83],"and":[84],"\u03b1H":[85],"decreases":[86],"with":[87],"increasing":[88],"for":[90],"lowest":[92],"from":[95],"4":[96],"70":[98],"K.":[99],"Taking":[100],"into":[101],"account":[102],"effect":[104],"bidimensional":[106],"gas":[108],"(2DEG)":[109],"temperatures,":[113],"obtained":[115],"results":[116],"allow":[117],"us":[118],"suggest":[120],"predominant":[123],"model":[124],"is":[132],"fluctuation":[134],"model.":[136]},"counts_by_year":[{"year":2022,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}