{"id":"https://openalex.org/W3183603043","doi":"https://doi.org/10.23919/date51398.2021.9474180","title":"A FeRAM based Volatile/Non-volatile Dual-mode Buffer Memory for Deep Neural Network Training","display_name":"A FeRAM based Volatile/Non-volatile Dual-mode Buffer Memory for Deep Neural Network Training","publication_year":2021,"publication_date":"2021-02-01","ids":{"openalex":"https://openalex.org/W3183603043","doi":"https://doi.org/10.23919/date51398.2021.9474180","mag":"3183603043"},"language":"en","primary_location":{"id":"doi:10.23919/date51398.2021.9474180","is_oa":false,"landing_page_url":"https://doi.org/10.23919/date51398.2021.9474180","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 Design, Automation & Test in Europe Conference & Exhibition (DATE)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5021633981","display_name":"Yandong Luo","orcid":"https://orcid.org/0000-0001-8239-0492"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yandong Luo","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000347268","display_name":"Yuan-Chun Luc","orcid":null},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuan-Chun Luc","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5054894631","display_name":"Shimeng Yu","orcid":"https://orcid.org/0000-0002-0068-3652"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shimeng Yu","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I130701444"],"apc_list":null,"apc_paid":null,"fwci":1.628,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.81171608,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1871","last_page":"1876"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12046","display_name":"MXene and MAX Phase Materials","score":0.98089998960495,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.6934003829956055},{"id":"https://openalex.org/keywords/ferroelectric-ram","display_name":"Ferroelectric RAM","score":0.6584436297416687},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.6564363241195679},{"id":"https://openalex.org/keywords/standby-power","display_name":"Standby power","score":0.6067098379135132},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.593070387840271},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5729981064796448},{"id":"https://openalex.org/keywords/non-volatile-random-access-memory","display_name":"Non-volatile random-access memory","score":0.54462069272995},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.47344231605529785},{"id":"https://openalex.org/keywords/memory-refresh","display_name":"Memory refresh","score":0.4627169966697693},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.45979568362236023},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.44683837890625},{"id":"https://openalex.org/keywords/universal-memory","display_name":"Universal memory","score":0.41609811782836914},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2877998948097229},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.22672829031944275},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19971466064453125},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.19222122430801392},{"id":"https://openalex.org/keywords/computer-memory","display_name":"Computer memory","score":0.16822534799575806}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.6934003829956055},{"id":"https://openalex.org/C161164327","wikidata":"https://www.wikidata.org/wiki/Q703656","display_name":"Ferroelectric RAM","level":4,"score":0.6584436297416687},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.6564363241195679},{"id":"https://openalex.org/C7140552","wikidata":"https://www.wikidata.org/wiki/Q1366402","display_name":"Standby power","level":3,"score":0.6067098379135132},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.593070387840271},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5729981064796448},{"id":"https://openalex.org/C34172316","wikidata":"https://www.wikidata.org/wiki/Q499024","display_name":"Non-volatile random-access memory","level":5,"score":0.54462069272995},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.47344231605529785},{"id":"https://openalex.org/C87907426","wikidata":"https://www.wikidata.org/wiki/Q6815755","display_name":"Memory refresh","level":4,"score":0.4627169966697693},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.45979568362236023},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.44683837890625},{"id":"https://openalex.org/C195053848","wikidata":"https://www.wikidata.org/wiki/Q7894141","display_name":"Universal memory","level":5,"score":0.41609811782836914},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2877998948097229},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.22672829031944275},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19971466064453125},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.19222122430801392},{"id":"https://openalex.org/C92855701","wikidata":"https://www.wikidata.org/wiki/Q5830907","display_name":"Computer memory","level":3,"score":0.16822534799575806},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/date51398.2021.9474180","is_oa":false,"landing_page_url":"https://doi.org/10.23919/date51398.2021.9474180","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 Design, Automation & Test in Europe Conference & Exhibition (DATE)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.9100000262260437,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1989608846","https://openalex.org/W2014651988","https://openalex.org/W2038355886","https://openalex.org/W2048266589","https://openalex.org/W2112553085","https://openalex.org/W2129733471","https://openalex.org/W2153039279","https://openalex.org/W2159253302","https://openalex.org/W2606722458","https://openalex.org/W2613989746","https://openalex.org/W2786159202","https://openalex.org/W2884687835","https://openalex.org/W2899077824","https://openalex.org/W2913902313","https://openalex.org/W2943765373","https://openalex.org/W2949335192","https://openalex.org/W3005619596","https://openalex.org/W3005839508","https://openalex.org/W3012561096","https://openalex.org/W3033443178","https://openalex.org/W4249654426","https://openalex.org/W6662587704","https://openalex.org/W6669679407"],"related_works":["https://openalex.org/W1993178305","https://openalex.org/W1541813629","https://openalex.org/W1030357071","https://openalex.org/W4232117715","https://openalex.org/W3209704453","https://openalex.org/W1494152240","https://openalex.org/W3216166092","https://openalex.org/W2171888576","https://openalex.org/W2199137887","https://openalex.org/W2116182199"],"abstract_inverted_index":{"Deep":[0],"neural":[1],"network":[2],"(DNN)":[3],"training":[4,144],"produces":[5],"a":[6,77],"large":[7,49],"amount":[8],"of":[9,45,59,108,189],"intermediate":[10],"data.":[11],"As":[12],"off-chip":[13],"DRAM":[14,61],"access":[15,137],"is":[16,25,95,98,114,131,172,194],"both":[17,85],"energy":[18,30,65,152],"and":[19,41,52,89,149,160,176,182],"time":[20],"consuming,":[21],"sufficient":[22],"on-chip":[23],"buffer":[24,79,136,165,192],"preferred":[26],"to":[27,48,68,133],"achieve":[28],"high":[29,42,53],"efficiency":[31,66,153],"for":[32,142],"DNN":[33,143],"accelerator":[34],"designs.":[35],"However,":[36],"the":[37,64,101,109,120,135,163,180,190],"low":[38],"integration":[39],"density":[40],"leakage":[43],"current":[44],"SRAM":[46,161,181],"lead":[47],"area":[50,187],"cost":[51],"standby":[54,170],"power.":[55],"The":[56,106,139,168,185],"frequent":[57],"refresh":[58,71],"embedded":[60],"(eDRAM)":[62],"degrades":[63],"due":[67],"its":[69],"short":[70],"interval":[72],"(40~100\u00b5s).":[73],"In":[74],"this":[75],"paper,":[76],"dual-mode":[78,111,191],"memory":[80,112,127],"that":[81],"can":[82],"operate":[83],"in":[84],"volatile":[86],"eDRAM":[87,183],"mode":[88,94,128],"non-volatile":[90],"ferroelectric":[91],"RAM":[92],"(FeRAM)":[93],"proposed,":[96],"which":[97],"based":[99],"on":[100],"CMOS":[102],"compatible":[103],"HfZr02":[104],"material.":[105],"functionality":[107],"proposed":[110,132],"design":[113,193],"verified":[115],"using":[116],"SPICE":[117],"simulation":[118],"with":[119,157,162,179],"multi-domain":[121],"Preisach":[122],"model.":[123],"A":[124],"data":[125],"lifetime-aware":[126],"configuration":[129],"protocol":[130],"optimize":[134],"energy.":[138],"architectural":[140],"benchmark":[141],"shows":[145],"33.8%,":[146],"17.1":[147],"%":[148],"109.4%":[150],"higher":[151],"than":[154],"baseline":[155],"designs":[156],"eDRAM,":[158],"FeRAM":[159],"same":[164],"area,":[166],"respectively.":[167],"chip":[169,186],"power":[171],"reduced":[173],"by":[174],"26.8x~47.5x":[175],"1.5x~10.6x":[177],"compared":[178],"baselines.":[184],"overhead":[188],"5.7%.":[195]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}