{"id":"https://openalex.org/W3036985142","doi":"https://doi.org/10.23919/date48585.2020.9116267","title":"Impact of NBTI Aging on Self-Heating in Nanowire FET","display_name":"Impact of NBTI Aging on Self-Heating in Nanowire FET","publication_year":2020,"publication_date":"2020-03-01","ids":{"openalex":"https://openalex.org/W3036985142","doi":"https://doi.org/10.23919/date48585.2020.9116267","mag":"3036985142"},"language":"en","primary_location":{"id":"doi:10.23919/date48585.2020.9116267","is_oa":false,"landing_page_url":"https://doi.org/10.23919/date48585.2020.9116267","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 Design, Automation & Test in Europe Conference & Exhibition (DATE)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5030362624","display_name":"Om Prakash","orcid":"https://orcid.org/0000-0003-1219-2700"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Om Prakash","raw_affiliation_strings":["Karlsruhe Institute of Technology,Karlsruhe,Germany","Karlsruhe Institute of Technology, Karlsruhe, Germany"],"affiliations":[{"raw_affiliation_string":"Karlsruhe Institute of Technology,Karlsruhe,Germany","institution_ids":["https://openalex.org/I102335020"]},{"raw_affiliation_string":"Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059133190","display_name":"Hussam Amrouch","orcid":"https://orcid.org/0000-0002-5649-3102"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Hussam Amrouch","raw_affiliation_strings":["Karlsruhe Institute of Technology,Karlsruhe,Germany","Karlsruhe Institute of Technology, Karlsruhe, Germany"],"affiliations":[{"raw_affiliation_string":"Karlsruhe Institute of Technology,Karlsruhe,Germany","institution_ids":["https://openalex.org/I102335020"]},{"raw_affiliation_string":"Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059645325","display_name":"S. K. Manhas","orcid":"https://orcid.org/0000-0003-3360-9683"},"institutions":[{"id":"https://openalex.org/I154851008","display_name":"Indian Institute of Technology Roorkee","ror":"https://ror.org/00582g326","country_code":"IN","type":"education","lineage":["https://openalex.org/I154851008"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Sanjeev Manhas","raw_affiliation_strings":["Indian Institute of Technology,Roorkee,India","Indian Institute of Technology, Roorkee, India"],"affiliations":[{"raw_affiliation_string":"Indian Institute of Technology,Roorkee,India","institution_ids":["https://openalex.org/I154851008"]},{"raw_affiliation_string":"Indian Institute of Technology, Roorkee, India","institution_ids":["https://openalex.org/I154851008"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063508488","display_name":"J\u00f6rg Henkel","orcid":"https://orcid.org/0000-0001-9602-2922"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Jorg Henkel","raw_affiliation_strings":["Karlsruhe Institute of Technology,Karlsruhe,Germany","Karlsruhe Institute of Technology, Karlsruhe, Germany"],"affiliations":[{"raw_affiliation_string":"Karlsruhe Institute of Technology,Karlsruhe,Germany","institution_ids":["https://openalex.org/I102335020"]},{"raw_affiliation_string":"Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5030362624"],"corresponding_institution_ids":["https://openalex.org/I102335020"],"apc_list":null,"apc_paid":null,"fwci":0.6165,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.67365116,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1514","last_page":"1519"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.9208999872207642},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7730766534805298},{"id":"https://openalex.org/keywords/nanowire","display_name":"Nanowire","score":0.6180519461631775},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5814105272293091},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.49862027168273926},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.48837989568710327},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.48613545298576355},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.4698573350906372},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.42300593852996826},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.359516978263855},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.1978318989276886},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1535702347755432},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.10003572702407837},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.0905885100364685}],"concepts":[{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.9208999872207642},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7730766534805298},{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.6180519461631775},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5814105272293091},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.49862027168273926},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.48837989568710327},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.48613545298576355},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.4698573350906372},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.42300593852996826},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.359516978263855},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1978318989276886},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1535702347755432},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10003572702407837},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0905885100364685},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/date48585.2020.9116267","is_oa":false,"landing_page_url":"https://doi.org/10.23919/date48585.2020.9116267","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 Design, Automation & Test in Europe Conference & Exhibition (DATE)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W324409780","https://openalex.org/W1543881872","https://openalex.org/W1965229716","https://openalex.org/W2008473857","https://openalex.org/W2098702480","https://openalex.org/W2163999749","https://openalex.org/W2218377381","https://openalex.org/W2336251030","https://openalex.org/W2343754141","https://openalex.org/W2542085131","https://openalex.org/W2587700568","https://openalex.org/W2591285794","https://openalex.org/W2621017693","https://openalex.org/W2744099165","https://openalex.org/W2793321020","https://openalex.org/W2883575866","https://openalex.org/W2899119660","https://openalex.org/W2922461735","https://openalex.org/W6728890263","https://openalex.org/W6755832654"],"related_works":["https://openalex.org/W2294008440","https://openalex.org/W2064285767","https://openalex.org/W2000678541","https://openalex.org/W2329670254","https://openalex.org/W2330747830","https://openalex.org/W2339771246","https://openalex.org/W2077475836","https://openalex.org/W2787935444","https://openalex.org/W3200754472","https://openalex.org/W53103755"],"abstract_inverted_index":{"This":[0],"is":[1,60,167],"the":[2,7,16,28,109,148,157],"first":[3],"work":[4],"that":[5,43,103,111,133,187],"investigates":[6],"impact":[8,34,158],"of":[9,35,79,95,137,147,159],"Negative":[10],"Bias":[11],"Temperature":[12],"Instability":[13],"(NBTI)":[14],"on":[15,39,86,162],"Self-Heating":[17],"(SH)":[18],"phenomenon":[19],"in":[20,72,153,176],"Silicon":[21],"Nanowire":[22],"Field-Effect":[23],"Transistors":[24],"(SiNW-FETs).":[25],"We":[26],"investigate":[27],"individual":[29,135],"as":[30,32],"well":[31],"joint":[33],"NBTI":[36,112,118,138,160,171],"and":[37,41,69,92,119,126,139,172,205],"SH":[38,47,120,140,163,173],"pSiNW-FETs":[40,96],"demonstrate":[42],"NBTI-induced":[44],"traps":[45,161],"mitigate":[46],"effects":[48,71,110,121,141,174],"due":[49,99,155,198],"to":[50,100,123,143,156,169,178,199],"reduced":[51],"current":[52],"densities.":[53],"Our":[54,83,130],"Technology":[55],"CAD":[56],"(TCAD)-based":[57],"SiNW-FET":[58],"device":[59],"calibrated":[61],"against":[62,190],"experimental":[63],"data.":[64],"It":[65],"accounts":[66],"for":[67,76],"thermodynamic":[68],"hydrodynamic":[70],"3-D":[73],"nano":[74],"structures":[75],"accurate":[77,104],"modeling":[78,106,136],"carrier":[80],"transport":[81],"mechanisms.":[82],"analysis":[84],"focuses":[85],"how":[87],"lattice":[88],"temperature,":[89],"thermal":[90,93],"resistance":[91],"capacitance":[94],"are":[97],"affected":[98],"NBTI,":[101],"demonstrating":[102],"self-heating":[105],"necessitates":[107],"considering":[108],"aging":[113,204],"has":[114],"over":[115],"time.":[116],"Hence,":[117,165],"need":[122],"be":[124],"jointly":[125,175],"not":[127],"individually":[128],"modeled.":[129],"evaluation":[131],"shows":[132],"an":[134],"leads":[142],"a":[144],"noticeable":[145],"overestimation":[146],"overall":[149],"induced":[150,202],"delay":[151,200],"increase":[152],"circuits":[154,189],"mitigation.":[164],"it":[166],"necessary":[168],"model":[170],"order":[177],"estimate":[179],"efficient":[180],"(i.e.":[181],"small,":[182],"yet":[183],"sufficient)":[184],"timing":[185,191],"guardbands":[186],"protect":[188],"violations,":[192],"which":[193],"will":[194],"occur":[195],"at":[196],"runtime":[197],"increases":[201],"by":[203],"self-heating.":[206]},"counts_by_year":[{"year":2024,"cited_by_count":3},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}