{"id":"https://openalex.org/W2613758857","doi":"https://doi.org/10.23919/date.2017.7927047","title":"Voltage-controlled MRAM for working memory: Perspectives and challenges","display_name":"Voltage-controlled MRAM for working memory: Perspectives and challenges","publication_year":2017,"publication_date":"2017-03-01","ids":{"openalex":"https://openalex.org/W2613758857","doi":"https://doi.org/10.23919/date.2017.7927047","mag":"2613758857"},"language":"en","primary_location":{"id":"doi:10.23919/date.2017.7927047","is_oa":false,"landing_page_url":"https://doi.org/10.23919/date.2017.7927047","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Design, Automation & Test in Europe Conference & Exhibition (DATE), 2017","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100381646","display_name":"Wang Kang","orcid":"https://orcid.org/0000-0002-3169-6034"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Wang Kang","raw_affiliation_strings":["Fert Beijing Research Institute, Beihang University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Fert Beijing Research Institute, Beihang University, Beijing, China","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038647640","display_name":"Liang Chang","orcid":"https://orcid.org/0000-0002-6685-5576"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Liang Chang","raw_affiliation_strings":["Fert Beijing Research Institute, Beihang University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Fert Beijing Research Institute, Beihang University, Beijing, China","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018693228","display_name":"Youguang Zhang","orcid":"https://orcid.org/0009-0008-0928-4210"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Youguang Zhang","raw_affiliation_strings":["Fert Beijing Research Institute, Beihang University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Fert Beijing Research Institute, Beihang University, Beijing, China","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108630608","display_name":"Weisheng Zhao","orcid":null},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weisheng Zhao","raw_affiliation_strings":["Fert Beijing Research Institute, Beihang University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Fert Beijing Research Institute, Beihang University, Beijing, China","institution_ids":["https://openalex.org/I82880672"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5100381646"],"corresponding_institution_ids":["https://openalex.org/I82880672"],"apc_list":null,"apc_paid":null,"fwci":1.6459,"has_fulltext":false,"cited_by_count":31,"citation_normalized_percentile":{"value":0.8384755,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"542","last_page":"547"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9977999925613403,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.9568504095077515},{"id":"https://openalex.org/keywords/spin-transfer-torque","display_name":"Spin-transfer torque","score":0.6136736869812012},{"id":"https://openalex.org/keywords/racetrack-memory","display_name":"Racetrack memory","score":0.5846051573753357},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5622286200523376},{"id":"https://openalex.org/keywords/tunnel-magnetoresistance","display_name":"Tunnel magnetoresistance","score":0.5535507798194885},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4530392289161682},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.4107678234577179},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.2930929958820343},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.24246808886528015},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.23789045214653015},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.2266901731491089},{"id":"https://openalex.org/keywords/magnetization","display_name":"Magnetization","score":0.2248263955116272},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2184724509716034},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.197241872549057},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15410256385803223},{"id":"https://openalex.org/keywords/memory-refresh","display_name":"Memory refresh","score":0.1260119080543518},{"id":"https://openalex.org/keywords/magnetic-field","display_name":"Magnetic field","score":0.11891880631446838},{"id":"https://openalex.org/keywords/computer-memory","display_name":"Computer memory","score":0.09788766503334045}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.9568504095077515},{"id":"https://openalex.org/C609986","wikidata":"https://www.wikidata.org/wiki/Q844840","display_name":"Spin-transfer torque","level":4,"score":0.6136736869812012},{"id":"https://openalex.org/C43363307","wikidata":"https://www.wikidata.org/wiki/Q1651623","display_name":"Racetrack memory","level":5,"score":0.5846051573753357},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5622286200523376},{"id":"https://openalex.org/C56202322","wikidata":"https://www.wikidata.org/wiki/Q1884383","display_name":"Tunnel magnetoresistance","level":3,"score":0.5535507798194885},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4530392289161682},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.4107678234577179},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.2930929958820343},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.24246808886528015},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.23789045214653015},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.2266901731491089},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.2248263955116272},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2184724509716034},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.197241872549057},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15410256385803223},{"id":"https://openalex.org/C87907426","wikidata":"https://www.wikidata.org/wiki/Q6815755","display_name":"Memory refresh","level":4,"score":0.1260119080543518},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.11891880631446838},{"id":"https://openalex.org/C92855701","wikidata":"https://www.wikidata.org/wiki/Q5830907","display_name":"Computer memory","level":3,"score":0.09788766503334045},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.23919/date.2017.7927047","is_oa":false,"landing_page_url":"https://doi.org/10.23919/date.2017.7927047","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Design, Automation & Test in Europe Conference & Exhibition (DATE), 2017","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8999999761581421,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":24,"referenced_works":["https://openalex.org/W60653809","https://openalex.org/W1901438555","https://openalex.org/W1976740300","https://openalex.org/W1976903470","https://openalex.org/W1977237839","https://openalex.org/W1980499861","https://openalex.org/W1980507265","https://openalex.org/W1988431200","https://openalex.org/W1991813033","https://openalex.org/W2010202670","https://openalex.org/W2010216838","https://openalex.org/W2025173691","https://openalex.org/W2034097727","https://openalex.org/W2047326844","https://openalex.org/W2052597506","https://openalex.org/W2072790036","https://openalex.org/W2078286721","https://openalex.org/W2090549658","https://openalex.org/W2144587765","https://openalex.org/W2147657366","https://openalex.org/W2148830790","https://openalex.org/W2219963777","https://openalex.org/W2342177063","https://openalex.org/W2844024981"],"related_works":["https://openalex.org/W4226197542","https://openalex.org/W1977755618","https://openalex.org/W2034593071","https://openalex.org/W1970094457","https://openalex.org/W2744144420","https://openalex.org/W3136027979","https://openalex.org/W2490184523","https://openalex.org/W2543376619","https://openalex.org/W2289300168","https://openalex.org/W4231059390"],"abstract_inverted_index":{"Magnetic":[0],"random":[1],"access":[2],"memory":[3,13],"(MRAM)":[4],"has":[5],"been":[6],"widely":[7],"studied":[8],"for":[9,49,128],"future":[10],"nonvolatile":[11],"working":[12,53,129],"candidate.":[14],"However,":[15],"the":[16,47,63,83,91,122,160,169],"mainstream":[17],"current":[18],"(spin":[19],"transfer":[20],"torque,":[21],"STT":[22],"or":[23,31],"spin":[24],"Hall":[25],"effect,":[26],"SHE)":[27],"driven":[28],"MRAMs":[29],"(STT-MRAM":[30],"SHE-MRAM)":[32],"face":[33],"intrinsic":[34],"problems":[35],"in":[36,147,173],"terms":[37,148,174],"of":[38,94,126,137,149,175],"high":[39],"write":[40,70,96],"power":[41,97],"and":[42,51,98,108,111,124,145,154,162,178],"long":[43],"latency,":[44],"significantly":[45],"limiting":[46],"applications":[48],"low-power":[50,161],"high-speed":[52,163],"memories.":[54],"The":[55],"recently-developed":[56],"new-generation":[57],"MRAM,":[58],"named":[59],"VCMA-MRAM,":[60],"which":[61],"exploits":[62],"voltage-controlled":[64],"magnetic":[65,78],"anisotropy":[66],"(VCMA)":[67],"effect":[68],"to":[69,73,85],"(or":[71],"assist":[72],"write)":[74],"data":[75,165],"information":[76],"into":[77],"tunnel":[79],"junctions":[80],"(MTJs),":[81],"holds":[82],"promise":[84],"efficiently":[86,183],"overcome":[87],"these":[88],"problems.":[89],"Despite":[90],"impressive":[92],"possibility":[93],"improving":[95],"speed,":[99,151],"this":[100,118],"technology,":[101],"however,":[102],"is":[103],"currently":[104],"under":[105],"intensive":[106],"research":[107],"development":[109],"(R&D),":[110],"some":[112],"challenges":[113,125,172],"still":[114],"await":[115],"answers.":[116],"In":[117],"paper,":[119],"we":[120],"investigate":[121],"perspectives":[123],"VCMA-MRAM":[127,142],"memories":[130],"from":[131,159],"a":[132],"cross-layer":[133],"(device/circuit/architecture)":[134],"design":[135,180],"point":[136],"view.":[138],"We":[139],"demonstrate":[140],"that":[141],"outperforms":[143],"STT-MRAM":[144],"SHE-MRAM":[146],"area,":[150],"energy":[152],"consumption":[153],"instruction-per-cycle":[155],"(IPC)":[156],"performance,":[157],"benefiting":[158],"VCMA-driven":[164],"writing":[166],"mechanism.":[167],"On":[168],"other":[170],"hand,":[171],"device":[176],"fabrication":[177],"circuit":[179],"should":[181],"be":[182],"addressed":[184],"before":[185],"practical":[186],"applications.":[187]},"counts_by_year":[{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":6},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":5},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}