{"id":"https://openalex.org/W2040523425","doi":"https://doi.org/10.1631/jzus.c1200268","title":"An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator","display_name":"An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator","publication_year":2013,"publication_date":"2013-03-01","ids":{"openalex":"https://openalex.org/W2040523425","doi":"https://doi.org/10.1631/jzus.c1200268","mag":"2040523425"},"language":"en","primary_location":{"id":"doi:10.1631/jzus.c1200268","is_oa":false,"landing_page_url":"https://doi.org/10.1631/jzus.c1200268","pdf_url":null,"source":{"id":"https://openalex.org/S199067057","display_name":"Journal of Zhejiang University SCIENCE C","issn_l":"1869-1951","issn":["1869-1951","1869-196X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310311937","host_organization_name":"Zhejiang University Press","host_organization_lineage":["https://openalex.org/P4310311937"],"host_organization_lineage_names":["Zhejiang University Press"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Zhejiang University SCIENCE C","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010364024","display_name":"Liheng Lou","orcid":"https://orcid.org/0000-0002-3431-8709"},"institutions":[{"id":"https://openalex.org/I4210092088","display_name":"Zhejiang Province Institute of Architectural Design and Research","ror":"https://ror.org/00f89ms08","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210092088"]},{"id":"https://openalex.org/I50760025","display_name":"Hangzhou Dianzi University","ror":"https://ror.org/0576gt767","country_code":"CN","type":"education","lineage":["https://openalex.org/I50760025"]},{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Li-heng Lou","raw_affiliation_strings":["Institute of VLSI Design, Zhejiang University, Hangzhou, 310027, China","MOE Key Laboratory of RF Circuits and Systems, Hangzhou Dianzi University, Hangzhou, 310018, China","Zhejiang University","HangZhou Dianzi University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of VLSI Design, Zhejiang University, Hangzhou, 310027, China","institution_ids":["https://openalex.org/I4210092088","https://openalex.org/I76130692"]},{"raw_affiliation_string":"MOE Key Laboratory of RF Circuits and Systems, Hangzhou Dianzi University, Hangzhou, 310018, China","institution_ids":["https://openalex.org/I50760025"]},{"raw_affiliation_string":"Zhejiang University","institution_ids":["https://openalex.org/I76130692"]},{"raw_affiliation_string":"HangZhou Dianzi University","institution_ids":["https://openalex.org/I50760025"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031821249","display_name":"Lingling Sun","orcid":"https://orcid.org/0000-0002-6410-1471"},"institutions":[{"id":"https://openalex.org/I50760025","display_name":"Hangzhou Dianzi University","ror":"https://ror.org/0576gt767","country_code":"CN","type":"education","lineage":["https://openalex.org/I50760025"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ling-ling Sun","raw_affiliation_strings":["MOE Key Laboratory of RF Circuits and Systems, Hangzhou Dianzi University, Hangzhou, 310018, China","HangZhou Dianzi University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MOE Key Laboratory of RF Circuits and Systems, Hangzhou Dianzi University, Hangzhou, 310018, China","institution_ids":["https://openalex.org/I50760025"]},{"raw_affiliation_string":"HangZhou Dianzi University","institution_ids":["https://openalex.org/I50760025"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100361964","display_name":"Jun Liu","orcid":"https://orcid.org/0000-0002-8627-5085"},"institutions":[{"id":"https://openalex.org/I50760025","display_name":"Hangzhou Dianzi University","ror":"https://ror.org/0576gt767","country_code":"CN","type":"education","lineage":["https://openalex.org/I50760025"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jun Liu","raw_affiliation_strings":["MOE Key Laboratory of RF Circuits and Systems, Hangzhou Dianzi University, Hangzhou, 310018, China","HangZhou Dianzi University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MOE Key Laboratory of RF Circuits and Systems, Hangzhou Dianzi University, Hangzhou, 310018, China","institution_ids":["https://openalex.org/I50760025"]},{"raw_affiliation_string":"HangZhou Dianzi University","institution_ids":["https://openalex.org/I50760025"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101411316","display_name":"Haijun Gao","orcid":"https://orcid.org/0000-0002-6394-8339"},"institutions":[{"id":"https://openalex.org/I50760025","display_name":"Hangzhou Dianzi University","ror":"https://ror.org/0576gt767","country_code":"CN","type":"education","lineage":["https://openalex.org/I50760025"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hai-jun Gao","raw_affiliation_strings":["MOE Key Laboratory of RF Circuits and Systems, Hangzhou Dianzi University, Hangzhou, 310018, China","HangZhou Dianzi University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MOE Key Laboratory of RF Circuits and Systems, Hangzhou Dianzi University, Hangzhou, 310018, China","institution_ids":["https://openalex.org/I50760025"]},{"raw_affiliation_string":"HangZhou Dianzi University","institution_ids":["https://openalex.org/I50760025"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.2349,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.60279729,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"14","issue":"3","first_page":"205","last_page":"213"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/voltage-controlled-oscillator","display_name":"Voltage-controlled oscillator","score":0.7810940742492676},{"id":"https://openalex.org/keywords/parasitic-extraction","display_name":"Parasitic extraction","score":0.6695952415466309},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5287221074104309},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5077635049819946},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5055477619171143},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4822136163711548},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.47590336203575134},{"id":"https://openalex.org/keywords/interconnection","display_name":"Interconnection","score":0.4675511419773102},{"id":"https://openalex.org/keywords/convergence","display_name":"Convergence (economics)","score":0.4360645115375519},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4301602244377136},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3765718638896942},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.30586618185043335},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2836071848869324},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2763902246952057},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12795671820640564},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.1150217354297638}],"concepts":[{"id":"https://openalex.org/C5291336","wikidata":"https://www.wikidata.org/wiki/Q852341","display_name":"Voltage-controlled oscillator","level":3,"score":0.7810940742492676},{"id":"https://openalex.org/C159818811","wikidata":"https://www.wikidata.org/wiki/Q7135947","display_name":"Parasitic extraction","level":2,"score":0.6695952415466309},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5287221074104309},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5077635049819946},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5055477619171143},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4822136163711548},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.47590336203575134},{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.4675511419773102},{"id":"https://openalex.org/C2777303404","wikidata":"https://www.wikidata.org/wiki/Q759757","display_name":"Convergence (economics)","level":2,"score":0.4360645115375519},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4301602244377136},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3765718638896942},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.30586618185043335},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2836071848869324},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2763902246952057},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12795671820640564},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.1150217354297638},{"id":"https://openalex.org/C50522688","wikidata":"https://www.wikidata.org/wiki/Q189833","display_name":"Economic growth","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1631/jzus.c1200268","is_oa":false,"landing_page_url":"https://doi.org/10.1631/jzus.c1200268","pdf_url":null,"source":{"id":"https://openalex.org/S199067057","display_name":"Journal of Zhejiang University SCIENCE C","issn_l":"1869-1951","issn":["1869-1951","1869-196X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310311937","host_organization_name":"Zhejiang University Press","host_organization_lineage":["https://openalex.org/P4310311937"],"host_organization_lineage_names":["Zhejiang University Press"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Zhejiang University SCIENCE C","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.7300000190734863,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1937563996","https://openalex.org/W1980460888","https://openalex.org/W2082766327","https://openalex.org/W2104340505","https://openalex.org/W2108073578","https://openalex.org/W2120172430","https://openalex.org/W2121764044","https://openalex.org/W2156076271","https://openalex.org/W2171353752","https://openalex.org/W2913598597","https://openalex.org/W6600529467"],"related_works":["https://openalex.org/W2070109416","https://openalex.org/W1523213765","https://openalex.org/W1905216755","https://openalex.org/W2040399070","https://openalex.org/W2388316590","https://openalex.org/W1991973217","https://openalex.org/W4242813950","https://openalex.org/W2084737927","https://openalex.org/W2157788653","https://openalex.org/W1590105020"],"abstract_inverted_index":{"This":[0],"paper":[1],"proposes":[2],"an":[3,87],"efficient":[4],"PSP-based":[5],"model":[6,23,28,64,83,117],"for":[7],"cross-coupled":[8,74,121],"metal-oxide-semiconductor":[9],"field-effect":[10],"transistors":[11],"(MOSFETs)":[12],"with":[13,39,86],"optimized":[14,120],"layout":[15],"in":[16,107,123],"the":[17,31,58,61,73,115],"voltage":[18],"controlled":[19],"oscillator":[20],"(VCO).":[21],"The":[22,42,69,82,97],"employs":[24],"a":[25],"PSP":[26,62],"charge":[27,63],"to":[29,56],"characterize":[30],"bias-dependent":[32],"extrinsic":[33],"capacitance":[34],"instead":[35],"of":[36,60,72],"numerical":[37],"functions":[38],"strong":[40],"non-linearity.":[41],"simulation":[43,108],"convergence":[44,94],"is":[45,54,84],"greatly":[46],"improved":[47],"by":[48],"this":[49],"method.":[50],"An":[51],"original":[52],"scheme":[53],"developed":[55],"extract":[57],"parameters":[59],"based":[65,78],"on":[66,79],"S-parameters":[67],"measurement.":[68],"interconnection":[70],"parasitics":[71],"MOSFETs":[75,122],"are":[76],"modeled":[77],"vector":[80],"fitting.":[81],"verified":[85],"LC":[88],"VCO":[89],"design,":[90],"and":[91,105,110],"exhibits":[92],"excellent":[93],"during":[95],"simulation.":[96],"results":[98],"show":[99],"improvements":[100],"as":[101,103],"high":[102],"60.5%":[104],"61.8%":[106],"efficiency":[109],"accuracy,":[111],"respectively,":[112],"indicating":[113],"that":[114],"proposed":[116],"better":[118],"characterizes":[119],"advanced":[124],"radio":[125],"frequency":[126],"(RF)":[127],"circuit":[128],"design.":[129]},"counts_by_year":[{"year":2015,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}