{"id":"https://openalex.org/W1971775422","doi":"https://doi.org/10.1631/jzus.c1100090","title":"An accurate analytical I\u2013V model for sub-90-nm MOSFETs and its application to read static noise margin modeling","display_name":"An accurate analytical I\u2013V model for sub-90-nm MOSFETs and its application to read static noise margin modeling","publication_year":2012,"publication_date":"2012-01-01","ids":{"openalex":"https://openalex.org/W1971775422","doi":"https://doi.org/10.1631/jzus.c1100090","mag":"1971775422"},"language":"en","primary_location":{"id":"doi:10.1631/jzus.c1100090","is_oa":false,"landing_page_url":"https://doi.org/10.1631/jzus.c1100090","pdf_url":null,"source":{"id":"https://openalex.org/S199067057","display_name":"Journal of Zhejiang University SCIENCE C","issn_l":"1869-1951","issn":["1869-1951","1869-196X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310311937","host_organization_name":"Zhejiang University Press","host_organization_lineage":["https://openalex.org/P4310311937"],"host_organization_lineage_names":["Zhejiang University Press"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Zhejiang University SCIENCE C","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5023286797","display_name":"Behrouz Afzal","orcid":null},"institutions":[{"id":"https://openalex.org/I23946033","display_name":"University of Tehran","ror":"https://ror.org/05vf56z40","country_code":"IR","type":"education","lineage":["https://openalex.org/I23946033"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"Behrouz Afzal","raw_affiliation_strings":["School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran","University\u00a0of\u00a0Tehran"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran","institution_ids":["https://openalex.org/I23946033"]},{"raw_affiliation_string":"University\u00a0of\u00a0Tehran","institution_ids":["https://openalex.org/I23946033"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076545660","display_name":"Behzad Ebrahimi","orcid":"https://orcid.org/0000-0002-1754-435X"},"institutions":[{"id":"https://openalex.org/I23946033","display_name":"University of Tehran","ror":"https://ror.org/05vf56z40","country_code":"IR","type":"education","lineage":["https://openalex.org/I23946033"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"Behzad Ebrahimi","raw_affiliation_strings":["School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran","University\u00a0of\u00a0Tehran"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran","institution_ids":["https://openalex.org/I23946033"]},{"raw_affiliation_string":"University\u00a0of\u00a0Tehran","institution_ids":["https://openalex.org/I23946033"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074063358","display_name":"Ali Afzali\u2010Kusha","orcid":"https://orcid.org/0000-0001-8614-2007"},"institutions":[{"id":"https://openalex.org/I23946033","display_name":"University of Tehran","ror":"https://ror.org/05vf56z40","country_code":"IR","type":"education","lineage":["https://openalex.org/I23946033"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"Ali Afzali-Kusha","raw_affiliation_strings":["School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran","University\u00a0of\u00a0Tehran"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran","institution_ids":["https://openalex.org/I23946033"]},{"raw_affiliation_string":"University\u00a0of\u00a0Tehran","institution_ids":["https://openalex.org/I23946033"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5044650311","display_name":"Massoud Pedram","orcid":"https://orcid.org/0000-0002-2677-7307"},"institutions":[{"id":"https://openalex.org/I1174212","display_name":"University of Southern California","ror":"https://ror.org/03taz7m60","country_code":"US","type":"education","lineage":["https://openalex.org/I1174212"]},{"id":"https://openalex.org/I2800817003","display_name":"California Southern University","ror":"https://ror.org/058zz0t50","country_code":"US","type":"education","lineage":["https://openalex.org/I2800817003"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Massoud Pedram","raw_affiliation_strings":["Department of Electrical Engineering, University of Southern California, Los Angeles, CA, USA","University of Southern California"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Southern California, Los Angeles, CA, USA","institution_ids":["https://openalex.org/I1174212"]},{"raw_affiliation_string":"University of Southern California","institution_ids":["https://openalex.org/I1174212","https://openalex.org/I2800817003"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.8492,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.75754629,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"13","issue":"1","first_page":"58","last_page":"70"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6766810417175293},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5775793790817261},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.5599274635314941},{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.537270188331604},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5078781247138977},{"id":"https://openalex.org/keywords/noise-margin","display_name":"Noise margin","score":0.507803738117218},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.49767306447029114},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.490434855222702},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.46883076429367065},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4607149064540863},{"id":"https://openalex.org/keywords/semiconductor-device-modeling","display_name":"Semiconductor device modeling","score":0.4561355710029602},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.44512882828712463},{"id":"https://openalex.org/keywords/logarithm","display_name":"Logarithm","score":0.41807126998901367},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.41610926389694214},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.40905365347862244},{"id":"https://openalex.org/keywords/computational-physics","display_name":"Computational physics","score":0.40031522512435913},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39026251435279846},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3589315414428711},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.23730728030204773},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.19935351610183716},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1544102430343628},{"id":"https://openalex.org/keywords/mathematical-analysis","display_name":"Mathematical analysis","score":0.08758476376533508},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.08537086844444275}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6766810417175293},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5775793790817261},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.5599274635314941},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.537270188331604},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5078781247138977},{"id":"https://openalex.org/C179499742","wikidata":"https://www.wikidata.org/wiki/Q1324892","display_name":"Noise margin","level":4,"score":0.507803738117218},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.49767306447029114},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.490434855222702},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.46883076429367065},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4607149064540863},{"id":"https://openalex.org/C4775677","wikidata":"https://www.wikidata.org/wiki/Q7449393","display_name":"Semiconductor device modeling","level":3,"score":0.4561355710029602},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.44512882828712463},{"id":"https://openalex.org/C39927690","wikidata":"https://www.wikidata.org/wiki/Q11197","display_name":"Logarithm","level":2,"score":0.41807126998901367},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.41610926389694214},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.40905365347862244},{"id":"https://openalex.org/C30475298","wikidata":"https://www.wikidata.org/wiki/Q909554","display_name":"Computational physics","level":1,"score":0.40031522512435913},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39026251435279846},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3589315414428711},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.23730728030204773},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.19935351610183716},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1544102430343628},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.08758476376533508},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.08537086844444275},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1631/jzus.c1100090","is_oa":false,"landing_page_url":"https://doi.org/10.1631/jzus.c1100090","pdf_url":null,"source":{"id":"https://openalex.org/S199067057","display_name":"Journal of Zhejiang University SCIENCE C","issn_l":"1869-1951","issn":["1869-1951","1869-196X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310311937","host_organization_name":"Zhejiang University Press","host_organization_lineage":["https://openalex.org/P4310311937"],"host_organization_lineage_names":["Zhejiang University Press"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Zhejiang University SCIENCE C","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7699999809265137,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W614375648","https://openalex.org/W1530625153","https://openalex.org/W1533614470","https://openalex.org/W1984428132","https://openalex.org/W2002612140","https://openalex.org/W2041424982","https://openalex.org/W2049792524","https://openalex.org/W2075966063","https://openalex.org/W2102785080","https://openalex.org/W2123085386","https://openalex.org/W2131833150","https://openalex.org/W2132621842","https://openalex.org/W2134067926","https://openalex.org/W2145750057","https://openalex.org/W2155524644","https://openalex.org/W2156578459","https://openalex.org/W2166736900","https://openalex.org/W2168101540","https://openalex.org/W2257517420","https://openalex.org/W2515398546","https://openalex.org/W2544731038","https://openalex.org/W6631825456","https://openalex.org/W7033466590"],"related_works":["https://openalex.org/W3150866391","https://openalex.org/W2112214579","https://openalex.org/W2310523918","https://openalex.org/W4200470254","https://openalex.org/W2118528827","https://openalex.org/W2534886762","https://openalex.org/W1967467072","https://openalex.org/W1582224818","https://openalex.org/W2775062502","https://openalex.org/W2044270051"],"abstract_inverted_index":{"We":[0,122],"propose":[1],"an":[2],"accurate":[3],"model":[4,31,68,85,101,191],"to":[5,102],"describe":[6],"the":[7,18,28,35,51,61,67,76,90,98,104,124,129,135,138,143,147,155,165,177,190,195],"I\u2013V":[8,100],"characteristics":[9],"of":[10,27,39,60,66,110,134,142,146,164,179],"a":[11,201],"sub-90-nm":[12],"metal-oxide-semiconductor":[13],"field-effect":[14],"transistor":[15],"(MOSFET)":[16],"in":[17,50,137,159,176],"linear":[19],"and":[20,44,80,92,172,182],"saturation":[21],"regions":[22,139],"for":[23,75,154,168,200],"fast":[24],"analytical":[25],"calculation":[26],"current.":[29],"The":[30,64,84,152],"is":[32,48,69],"based":[33],"on":[34],"BSIM3v3":[36,52,93],"model.":[37],"Instead":[38],"using":[40],"constant":[41],"threshold":[42],"voltage":[43,132,198],"early":[45],"voltage,":[46],"as":[47,58],"assumed":[49],"model,":[53],"we":[54,96],"define":[55],"these":[56],"voltages":[57],"functions":[59],"gate-source":[62],"voltage.":[63],"accuracy":[65,88],"verified":[70],"by":[71,127],"comparison":[72],"with":[73,119,162],"HSPICE":[74,166],"90-,":[77,169],"65-,":[78,170],"45-,":[79,171],"32-nm":[81,173],"CMOS":[82],"technologies.":[83,174],"shows":[86,188],"better":[87],"than":[89],"nth-power":[91],"models.":[94],"Then,":[95],"use":[97],"proposed":[99],"calculate":[103,123],"read":[105,125],"static":[106,114],"noise":[107],"margin":[108],"(SNM)":[109],"nano-scale":[111],"conventional":[112],"6T":[113],"random-access":[115],"memory":[116],"(SRAM)":[117],"cells":[118],"high":[120],"accuracy.":[121],"SNM":[126,156],"approximating":[128],"inverter":[130],"transfer":[131],"characteristic":[133],"cell":[136],"where":[140],"vertices":[141],"maximum":[144],"square":[145],"butterfly":[148],"curves":[149],"are":[150,157],"placed.":[151],"results":[153],"also":[158],"excellent":[160],"agreement":[161],"those":[163],"simulation":[167],"Verification":[175],"presence":[178],"process":[180],"variations":[181],"negative":[183],"bias":[184],"temperature":[185],"instability":[186],"(NBTI)":[187],"that":[189],"can":[192],"accurately":[193],"predict":[194],"minimum":[196],"supply":[197],"required":[199],"target":[202],"yield.":[203]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":3}],"updated_date":"2026-07-22T07:51:19.307946","created_date":"2025-10-10T00:00:00"}