{"id":"https://openalex.org/W4210597458","doi":"https://doi.org/10.1631/fitee.2000504","title":"Design and optimization of a gate-controlled dual direction electro-static discharge device for an industry-level fluorescent optical fiber temperature sensor","display_name":"Design and optimization of a gate-controlled dual direction electro-static discharge device for an industry-level fluorescent optical fiber temperature sensor","publication_year":2022,"publication_date":"2022-01-01","ids":{"openalex":"https://openalex.org/W4210597458","doi":"https://doi.org/10.1631/fitee.2000504"},"language":"en","primary_location":{"id":"doi:10.1631/fitee.2000504","is_oa":false,"landing_page_url":"https://doi.org/10.1631/fitee.2000504","pdf_url":null,"source":{"id":"https://openalex.org/S4210189857","display_name":"Frontiers of Information Technology & Electronic Engineering","issn_l":"2095-9184","issn":["2095-9184","2095-9230"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Frontiers of Information Technology & Electronic Engineering","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5082734009","display_name":"Yang Wang","orcid":"https://orcid.org/0000-0003-0363-3412"},"institutions":[{"id":"https://openalex.org/I173759888","display_name":"Hunan Normal University","ror":"https://ror.org/053w1zy07","country_code":"CN","type":"education","lineage":["https://openalex.org/I173759888"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yang Wang","raw_affiliation_strings":["School of Physics and Electronics, Hunan Normal University, Changsha, China"],"affiliations":[{"raw_affiliation_string":"School of Physics and Electronics, Hunan Normal University, Changsha, China","institution_ids":["https://openalex.org/I173759888"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108276232","display_name":"Xiangliang Jin","orcid":"https://orcid.org/0000-0002-9732-142X"},"institutions":[{"id":"https://openalex.org/I173759888","display_name":"Hunan Normal University","ror":"https://ror.org/053w1zy07","country_code":"CN","type":"education","lineage":["https://openalex.org/I173759888"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xiangliang Jin","raw_affiliation_strings":["School of Physics and Electronics, Hunan Normal University, Changsha, China"],"affiliations":[{"raw_affiliation_string":"School of Physics and Electronics, Hunan Normal University, Changsha, China","institution_ids":["https://openalex.org/I173759888"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083577000","display_name":"Jian Yang","orcid":"https://orcid.org/0000-0002-7329-4738"},"institutions":[{"id":"https://openalex.org/I125749732","display_name":"Western University","ror":"https://ror.org/02grkyz14","country_code":"CA","type":"education","lineage":["https://openalex.org/I125749732"]},{"id":"https://openalex.org/I173759888","display_name":"Hunan Normal University","ror":"https://ror.org/053w1zy07","country_code":"CN","type":"education","lineage":["https://openalex.org/I173759888"]}],"countries":["CA","CN"],"is_corresponding":false,"raw_author_name":"Jian Yang","raw_affiliation_strings":["Faculty of Engineering, Western University, London, Canada","School of Physics and Electronics, Hunan Normal University, Changsha, China"],"affiliations":[{"raw_affiliation_string":"Faculty of Engineering, Western University, London, Canada","institution_ids":["https://openalex.org/I125749732"]},{"raw_affiliation_string":"School of Physics and Electronics, Hunan Normal University, Changsha, China","institution_ids":["https://openalex.org/I173759888"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Feng Yan","orcid":null},"institutions":[{"id":"https://openalex.org/I173759888","display_name":"Hunan Normal University","ror":"https://ror.org/053w1zy07","country_code":"CN","type":"education","lineage":["https://openalex.org/I173759888"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Feng Yan","raw_affiliation_strings":["School of Physics and Electronics, Hunan Normal University, Changsha, China"],"affiliations":[{"raw_affiliation_string":"School of Physics and Electronics, Hunan Normal University, Changsha, China","institution_ids":["https://openalex.org/I173759888"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100454964","display_name":"Yujie Liu","orcid":"https://orcid.org/0000-0003-3910-511X"},"institutions":[{"id":"https://openalex.org/I173759888","display_name":"Hunan Normal University","ror":"https://ror.org/053w1zy07","country_code":"CN","type":"education","lineage":["https://openalex.org/I173759888"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yujie Liu","raw_affiliation_strings":["School of Physics and Electronics, Hunan Normal University, Changsha, China"],"affiliations":[{"raw_affiliation_string":"School of Physics and Electronics, Hunan Normal University, Changsha, China","institution_ids":["https://openalex.org/I173759888"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100772740","display_name":"Yan Peng","orcid":"https://orcid.org/0000-0003-1312-9527"},"institutions":[{"id":"https://openalex.org/I113940042","display_name":"Shanghai University","ror":"https://ror.org/006teas31","country_code":"CN","type":"education","lineage":["https://openalex.org/I113940042"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Yan Peng","raw_affiliation_strings":["School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, China","institution_ids":["https://openalex.org/I113940042"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016769551","display_name":"Jun Luo","orcid":"https://orcid.org/0000-0003-1314-5631"},"institutions":[{"id":"https://openalex.org/I113940042","display_name":"Shanghai University","ror":"https://ror.org/006teas31","country_code":"CN","type":"education","lineage":["https://openalex.org/I113940042"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jun Luo","raw_affiliation_strings":["School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, China","institution_ids":["https://openalex.org/I113940042"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5007431639","display_name":"Jun Yang","orcid":"https://orcid.org/0000-0002-7545-4213"},"institutions":[{"id":"https://openalex.org/I125749732","display_name":"Western University","ror":"https://ror.org/02grkyz14","country_code":"CA","type":"education","lineage":["https://openalex.org/I125749732"]},{"id":"https://openalex.org/I173759888","display_name":"Hunan Normal University","ror":"https://ror.org/053w1zy07","country_code":"CN","type":"education","lineage":["https://openalex.org/I173759888"]}],"countries":["CA","CN"],"is_corresponding":false,"raw_author_name":"Jun Yang","raw_affiliation_strings":["Faculty of Engineering, Western University, London, Canada","School of Physics and Electronics, Hunan Normal University, Changsha, China"],"affiliations":[{"raw_affiliation_string":"Faculty of Engineering, Western University, London, Canada","institution_ids":["https://openalex.org/I125749732"]},{"raw_affiliation_string":"School of Physics and Electronics, Hunan Normal University, Changsha, China","institution_ids":["https://openalex.org/I173759888"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5100772740","https://openalex.org/A5108276232"],"corresponding_institution_ids":["https://openalex.org/I113940042","https://openalex.org/I173759888"],"apc_list":null,"apc_paid":null,"fwci":0.3693,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.55556589,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":"23","issue":"1","first_page":"158","last_page":"170"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9879000186920166,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13928","display_name":"Advanced Sensor Technologies Research","score":0.9858999848365784,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5735475420951843},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.5388315320014954},{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.5297152996063232},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4909396469593048},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4864937663078308},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.4698471128940582},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4682316184043884},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.45432889461517334},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4500199556350708},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.42311209440231323},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.39489033818244934},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.36974257230758667},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3337953984737396}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5735475420951843},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.5388315320014954},{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.5297152996063232},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4909396469593048},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4864937663078308},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.4698471128940582},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4682316184043884},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.45432889461517334},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4500199556350708},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.42311209440231323},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.39489033818244934},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.36974257230758667},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3337953984737396}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1631/fitee.2000504","is_oa":false,"landing_page_url":"https://doi.org/10.1631/fitee.2000504","pdf_url":null,"source":{"id":"https://openalex.org/S4210189857","display_name":"Frontiers of Information Technology & Electronic Engineering","issn_l":"2095-9184","issn":["2095-9184","2095-9230"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Frontiers of Information Technology & Electronic Engineering","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W2028289136","https://openalex.org/W2521774883","https://openalex.org/W2742809895","https://openalex.org/W2747949859","https://openalex.org/W2782391744","https://openalex.org/W2793818826","https://openalex.org/W2803590723","https://openalex.org/W2900211197","https://openalex.org/W2901106245","https://openalex.org/W2907677424","https://openalex.org/W2912125001","https://openalex.org/W2914293119","https://openalex.org/W2920569714","https://openalex.org/W2956209711","https://openalex.org/W2976208640","https://openalex.org/W2985266575"],"related_works":["https://openalex.org/W2124694210","https://openalex.org/W2153609444","https://openalex.org/W2544244340","https://openalex.org/W3160715487","https://openalex.org/W2157426934","https://openalex.org/W2083085379","https://openalex.org/W2011560271","https://openalex.org/W2501578203","https://openalex.org/W2113108952","https://openalex.org/W2040773997"],"abstract_inverted_index":{"The":[0,106,188],"input/output":[1],"(I/O)":[2],"pins":[3],"of":[4,30,111,130,137,145,156,167],"an":[5,56],"industry-level":[6],"fluorescent":[7],"optical":[8],"fiber":[9],"temperature":[10],"sensor":[11],"readout":[12,199],"circuit":[13],"need":[14],"on-chip":[15,57,202],"integrated":[16,58],"high-performance":[17],"electro-static":[18],"discharge":[19,204],"(ESD)":[20],"protection":[21],"devices.":[22],"It":[23],"is":[24,86,121,149,160,169,180],"difficult":[25],"for":[26,201],"the":[27,42,73,77,90,114,125,133,138,142,146,153,157,164,177],"failure":[28,68,143,154],"level":[29,69],"basic":[31],"N-type":[32],"buried":[33],"layer":[34],"gate-controlled":[35,62],"silicon":[36],"controlled":[37],"rectifier":[38],"(NBL-GCSCR)":[39],"manufactured":[40],"by":[41,96],"0.18":[43],"\u00b5m":[44,173],"standard":[45],"bipolar-CMOS-DMOS":[46],"(BCD)":[47],"process":[48],"to":[49,70,88,101,174,185],"meet":[50],"this":[51],"need.":[52],"Therefore,":[53],"we":[54],"propose":[55],"novel":[59],"deep":[60],"N-well":[61],"SCR":[63,135],"(DNW-GCSCR)":[64],"with":[65,113,132],"a":[66],"high":[67],"effectively":[71],"solve":[72],"problems":[74],"based":[75],"on":[76,197],"same":[78,139],"semiconductor":[79],"process.":[80],"Technology":[81],"computer-aided":[82],"design":[83],"(TCAD)":[84],"simulation":[85],"used":[87],"analyze":[89],"device":[91,148,159],"characteristics.":[92],"SCRs":[93],"are":[94],"tested":[95],"transmission":[97],"line":[98],"pulses":[99],"(TLP)":[100],"obtain":[102],"accurate":[103],"ESD":[104],"parameters.":[105],"holding":[107,126,178],"voltage":[108,127,179],"(24.03":[109],"V)":[110,129],"NBL-GCSCR":[112,147],"longitudinal":[115],"bipolar":[116],"junction":[117],"transistor":[118],"(BJT)":[119],"path":[120,136],"significantly":[122],"higher":[123],"than":[124],"(5.15":[128],"DNW-GCSCR":[131,158,168,190],"lateral":[134],"size.":[140],"However,":[141],"current":[144,155],"1.71":[150],"A,":[151],"and":[152],"20.99":[161],"A.":[162],"When":[163],"gate":[165],"size":[166],"increased":[170,181],"from":[171,182],"2":[172],"6":[175],"\u00b5m,":[176],"3.50":[183],"V":[184],"8.38":[186],"V.":[187],"optimized":[189],"(6":[191],"\u00b5m)":[192],"can":[193],"be":[194],"stably":[195],"applied":[196],"target":[198],"circuits":[200],"electrostatic":[203],"protection.":[205]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":1}],"updated_date":"2026-04-16T08:26:57.006410","created_date":"2025-10-10T00:00:00"}