{"id":"https://openalex.org/W2530774723","doi":"https://doi.org/10.1631/fitee.1500214","title":"Design and analysis of carbon nanotube FET based quaternary full adders","display_name":"Design and analysis of carbon nanotube FET based quaternary full adders","publication_year":2016,"publication_date":"2016-10-01","ids":{"openalex":"https://openalex.org/W2530774723","doi":"https://doi.org/10.1631/fitee.1500214","mag":"2530774723"},"language":"en","primary_location":{"id":"doi:10.1631/fitee.1500214","is_oa":false,"landing_page_url":"https://doi.org/10.1631/fitee.1500214","pdf_url":null,"source":{"id":"https://openalex.org/S4210189857","display_name":"Frontiers of Information Technology & Electronic Engineering","issn_l":"2095-9184","issn":["2095-9184","2095-9230"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Frontiers of Information Technology & Electronic Engineering","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5002663856","display_name":"Mohammad Hossein Moaiyeri","orcid":"https://orcid.org/0000-0001-9711-7923"},"institutions":[{"id":"https://openalex.org/I48379061","display_name":"Shahid Beheshti University","ror":"https://ror.org/0091vmj44","country_code":"IR","type":"education","lineage":["https://openalex.org/I48379061"]}],"countries":["IR"],"is_corresponding":true,"raw_author_name":"Mohammad Hossein Moaiyeri","raw_affiliation_strings":["Faculty of Electrical Engineering, Shahid Beheshti University, Tehran, 1983963113, Iran","Nanotechnology and Quantum Computing Lab, Shahid Beheshti University, Tehran, 1983963113, Iran"],"affiliations":[{"raw_affiliation_string":"Faculty of Electrical Engineering, Shahid Beheshti University, Tehran, 1983963113, Iran","institution_ids":["https://openalex.org/I48379061"]},{"raw_affiliation_string":"Nanotechnology and Quantum Computing Lab, Shahid Beheshti University, Tehran, 1983963113, Iran","institution_ids":["https://openalex.org/I48379061"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039704352","display_name":"Shima Sedighiani","orcid":"https://orcid.org/0000-0002-4702-5868"},"institutions":[{"id":"https://openalex.org/I48379061","display_name":"Shahid Beheshti University","ror":"https://ror.org/0091vmj44","country_code":"IR","type":"education","lineage":["https://openalex.org/I48379061"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"Shima Sedighiani","raw_affiliation_strings":["Nanotechnology and Quantum Computing Lab, Shahid Beheshti University, Tehran, 1983963113, Iran"],"affiliations":[{"raw_affiliation_string":"Nanotechnology and Quantum Computing Lab, Shahid Beheshti University, Tehran, 1983963113, Iran","institution_ids":["https://openalex.org/I48379061"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002483934","display_name":"Fazel Sharifi","orcid":"https://orcid.org/0000-0002-5744-1734"},"institutions":[{"id":"https://openalex.org/I48379061","display_name":"Shahid Beheshti University","ror":"https://ror.org/0091vmj44","country_code":"IR","type":"education","lineage":["https://openalex.org/I48379061"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"Fazel Sharifi","raw_affiliation_strings":["Nanotechnology and Quantum Computing Lab, Shahid Beheshti University, Tehran, 1983963113, Iran"],"affiliations":[{"raw_affiliation_string":"Nanotechnology and Quantum Computing Lab, Shahid Beheshti University, Tehran, 1983963113, Iran","institution_ids":["https://openalex.org/I48379061"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5044886674","display_name":"Keivan Navi","orcid":"https://orcid.org/0000-0002-5586-7766"},"institutions":[{"id":"https://openalex.org/I48379061","display_name":"Shahid Beheshti University","ror":"https://ror.org/0091vmj44","country_code":"IR","type":"education","lineage":["https://openalex.org/I48379061"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"Keivan Navi","raw_affiliation_strings":["Nanotechnology and Quantum Computing Lab, Shahid Beheshti University, Tehran, 1983963113, Iran"],"affiliations":[{"raw_affiliation_string":"Nanotechnology and Quantum Computing Lab, Shahid Beheshti University, Tehran, 1983963113, Iran","institution_ids":["https://openalex.org/I48379061"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5002663856"],"corresponding_institution_ids":["https://openalex.org/I48379061"],"apc_list":null,"apc_paid":null,"fwci":1.4701,"has_fulltext":false,"cited_by_count":23,"citation_normalized_percentile":{"value":0.84275026,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"17","issue":"10","first_page":"1056","last_page":"1066"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13182","display_name":"Quantum-Dot Cellular Automata","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/1703","display_name":"Computational Theory and Mathematics"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistor","display_name":"Carbon nanotube field-effect transistor","score":0.8724982738494873},{"id":"https://openalex.org/keywords/adder","display_name":"Adder","score":0.8548569679260254},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.534015953540802},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5114089846611023},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.44604814052581787},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.43733906745910645},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.4371767044067383},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.42261260747909546},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.40389835834503174},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.38495075702667236},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2528044581413269},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24352487921714783}],"concepts":[{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.8724982738494873},{"id":"https://openalex.org/C164620267","wikidata":"https://www.wikidata.org/wiki/Q376953","display_name":"Adder","level":3,"score":0.8548569679260254},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.534015953540802},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5114089846611023},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.44604814052581787},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.43733906745910645},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4371767044067383},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.42261260747909546},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.40389835834503174},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.38495075702667236},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2528044581413269},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24352487921714783}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1631/fitee.1500214","is_oa":false,"landing_page_url":"https://doi.org/10.1631/fitee.1500214","pdf_url":null,"source":{"id":"https://openalex.org/S4210189857","display_name":"Frontiers of Information Technology & Electronic Engineering","issn_l":"2095-9184","issn":["2095-9184","2095-9230"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Frontiers of Information Technology & Electronic Engineering","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":35,"referenced_works":["https://openalex.org/W572969154","https://openalex.org/W1525148056","https://openalex.org/W1636630887","https://openalex.org/W2006205140","https://openalex.org/W2021968256","https://openalex.org/W2025152094","https://openalex.org/W2036475592","https://openalex.org/W2039938822","https://openalex.org/W2041357015","https://openalex.org/W2068871056","https://openalex.org/W2077186783","https://openalex.org/W2090023687","https://openalex.org/W2090637781","https://openalex.org/W2091172051","https://openalex.org/W2094422480","https://openalex.org/W2104675962","https://openalex.org/W2104966817","https://openalex.org/W2115614135","https://openalex.org/W2116310614","https://openalex.org/W2121975995","https://openalex.org/W2125235887","https://openalex.org/W2129502787","https://openalex.org/W2133387332","https://openalex.org/W2133467019","https://openalex.org/W2138446805","https://openalex.org/W2165303371","https://openalex.org/W2169245181","https://openalex.org/W2172161464","https://openalex.org/W2254056388","https://openalex.org/W2321326409","https://openalex.org/W2324385807","https://openalex.org/W2351341406","https://openalex.org/W2536960003","https://openalex.org/W2603205530","https://openalex.org/W6981027285"],"related_works":["https://openalex.org/W2183015194","https://openalex.org/W4289821255","https://openalex.org/W2558163707","https://openalex.org/W4301220957","https://openalex.org/W1991749407","https://openalex.org/W2247337557","https://openalex.org/W3150791155","https://openalex.org/W2075215083","https://openalex.org/W2016581333","https://openalex.org/W2570275273"],"abstract_inverted_index":{"CMOS":[0],"binary":[1],"logic":[2,20],"is":[3,17],"limited":[4],"by":[5,56],"short":[6],"channel":[7],"effects,":[8],"power":[9,112],"density,":[10],"and":[11,62,69,109,132,135],"interconnection":[12],"restrictions.":[13],"The":[14,40,72,94],"effective":[15],"solution":[16],"non-silicon":[18],"multiple-valued":[19],"(MVL)":[21],"computing.":[22],"This":[23],"study":[24],"presents":[25],"two":[26],"high-performance":[27],"quaternary":[28,117],"full":[29,118],"adder":[30],"cells":[31],"based":[32],"on":[33,98],"carbon":[34,59],"nanotube":[35,60],"field":[36],"effect":[37],"transistors":[38],"(CNTFETs).":[39],"proposed":[41,73,95,125],"designs":[42,96,126],"use":[43],"the":[44,58,64,82,87,124],"unique":[45],"properties":[46],"of":[47],"CNTFETs":[48],"such":[49],"as":[50,67],"achieving":[51],"a":[52],"desired":[53],"threshold":[54],"voltage":[55],"adjusting":[57],"diameters":[61],"having":[63],"same":[65],"mobility":[66],"p-type":[68],"n-type":[70],"devices.":[71],"circuits":[74],"were":[75],"simulated":[76],"under":[77],"various":[78],"test":[79],"conditions":[80],"using":[81],"Synopsys":[83],"HSPICE":[84],"simulator":[85],"with":[86],"32":[88],"nm":[89],"Stanford":[90],"comprehensive":[91],"CNTFET":[92],"model.":[93],"have":[97],"average":[99,104],"32%":[100],"lower":[101],"delay,":[102],"68%":[103],"power,":[105],"83%":[106],"energy":[107],"consumption,":[108],"77%":[110],"static":[111],"compared":[113],"to":[114],"current":[115],"state-of-the-art":[116],"adders.":[119],"Simulation":[120],"results":[121],"indicated":[122],"that":[123],"are":[127,136],"robust":[128],"against":[129],"process,":[130],"voltage,":[131],"temperature":[133],"variations,":[134],"noise":[137],"tolerant.":[138]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":5},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}