{"id":"https://openalex.org/W2207069818","doi":"https://doi.org/10.1587/transele.e93.c.1511","title":"Electrical Properties of Ba0.5Sr0.5Ta2O6 Thin Film Fabricated by Sol-Gel Method","display_name":"Electrical Properties of Ba0.5Sr0.5Ta2O6 Thin Film Fabricated by Sol-Gel Method","publication_year":2010,"publication_date":"2010-01-01","ids":{"openalex":"https://openalex.org/W2207069818","doi":"https://doi.org/10.1587/transele.e93.c.1511","mag":"2207069818"},"language":"en","primary_location":{"id":"doi:10.1587/transele.e93.c.1511","is_oa":false,"landing_page_url":"https://doi.org/10.1587/transele.e93.c.1511","pdf_url":null,"source":{"id":"https://openalex.org/S2489501747","display_name":"IEICE Transactions on Electronics","issn_l":"0916-8524","issn":["0916-8524","1745-1353"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Transactions on Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5009390861","display_name":"Li Lu","orcid":"https://orcid.org/0000-0002-4361-012X"},"institutions":[{"id":"https://openalex.org/I75917431","display_name":"Nara Institute of Science and Technology","ror":"https://ror.org/05bhada84","country_code":"JP","type":"education","lineage":["https://openalex.org/I75917431"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Li LU","raw_affiliation_strings":["Nara Institute of Science and Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nara Institute of Science and Technology","institution_ids":["https://openalex.org/I75917431"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071728890","display_name":"Masahiro Echizen","orcid":null},"institutions":[{"id":"https://openalex.org/I75917431","display_name":"Nara Institute of Science and Technology","ror":"https://ror.org/05bhada84","country_code":"JP","type":"education","lineage":["https://openalex.org/I75917431"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masahiro ECHIZEN","raw_affiliation_strings":["Nara Institute of Science and Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nara Institute of Science and Technology","institution_ids":["https://openalex.org/I75917431"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071360328","display_name":"Takashi Nishida","orcid":"https://orcid.org/0000-0002-8312-6623"},"institutions":[{"id":"https://openalex.org/I75917431","display_name":"Nara Institute of Science and Technology","ror":"https://ror.org/05bhada84","country_code":"JP","type":"education","lineage":["https://openalex.org/I75917431"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takashi NISHIDA","raw_affiliation_strings":["Nara Institute of Science and Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nara Institute of Science and Technology","institution_ids":["https://openalex.org/I75917431"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030313072","display_name":"Kiyoshi Uchiyama","orcid":"https://orcid.org/0000-0002-7374-740X"},"institutions":[{"id":"https://openalex.org/I75917431","display_name":"Nara Institute of Science and Technology","ror":"https://ror.org/05bhada84","country_code":"JP","type":"education","lineage":["https://openalex.org/I75917431"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kiyoshi UCHIYAMA","raw_affiliation_strings":["Nara Institute of Science and Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nara Institute of Science and Technology","institution_ids":["https://openalex.org/I75917431"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5085914124","display_name":"Yukiharu Uraoka","orcid":"https://orcid.org/0000-0002-1319-3599"},"institutions":[{"id":"https://openalex.org/I75917431","display_name":"Nara Institute of Science and Technology","ror":"https://ror.org/05bhada84","country_code":"JP","type":"education","lineage":["https://openalex.org/I75917431"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yukiharu URAOKA","raw_affiliation_strings":["Nara Institute of Science and Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nara Institute of Science and Technology","institution_ids":["https://openalex.org/I75917431"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I75917431"],"apc_list":null,"apc_paid":null,"fwci":0.5795,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.74155048,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":"E93-C","issue":"10","first_page":"1511","last_page":"1515"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12588","display_name":"Electronic and Structural Properties of Oxides","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10107","display_name":"Ferroelectric and Piezoelectric Materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.8428823351860046},{"id":"https://openalex.org/keywords/thin-film","display_name":"Thin film","score":0.782844066619873},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.606490969657898},{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.5228396058082581},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.5188623666763306},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5081839561462402},{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.48576119542121887},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4447421133518219},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.42309531569480896},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.41370776295661926},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.22091197967529297}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8428823351860046},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.782844066619873},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.606490969657898},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5228396058082581},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.5188623666763306},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5081839561462402},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.48576119542121887},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4447421133518219},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.42309531569480896},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.41370776295661926},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.22091197967529297},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/transele.e93.c.1511","is_oa":false,"landing_page_url":"https://doi.org/10.1587/transele.e93.c.1511","pdf_url":null,"source":{"id":"https://openalex.org/S2489501747","display_name":"IEICE Transactions on Electronics","issn_l":"0916-8524","issn":["0916-8524","1745-1353"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Transactions on Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.550000011920929}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1511207421","https://openalex.org/W1518237432","https://openalex.org/W1681256491","https://openalex.org/W1966199290","https://openalex.org/W1971545785","https://openalex.org/W1976209131","https://openalex.org/W1981550413","https://openalex.org/W1987040211","https://openalex.org/W1988905389","https://openalex.org/W1998104380","https://openalex.org/W2015302755","https://openalex.org/W2032181364","https://openalex.org/W2049696386","https://openalex.org/W2053099306","https://openalex.org/W2053439629","https://openalex.org/W2060559666","https://openalex.org/W2062578296","https://openalex.org/W2100328629","https://openalex.org/W3101781882"],"related_works":["https://openalex.org/W1608358987","https://openalex.org/W2942544107","https://openalex.org/W3118435303","https://openalex.org/W2766296512","https://openalex.org/W3041158522","https://openalex.org/W2122748846","https://openalex.org/W579211899","https://openalex.org/W2059651197","https://openalex.org/W4236585463","https://openalex.org/W2084519062"],"abstract_inverted_index":{"Ba0.5Sr0.5Ta2O6":[0,147],"(BSTA)":[1],"thin":[2,21,35,58,67,148],"film":[3,22,36,59,68,149],"was":[4,101,150],"successfully":[5],"fabricated":[6],"on":[7,62],"a":[8,70],"Pt/SiO2/TiO2/Si":[9],"substrate":[10],"using":[11,25,45],"the":[12,19,34,38,44,63,113,128,142,146],"Sol-Gel":[13],"method.":[14],"Fundamental":[15],"electrical":[16],"properties":[17],"of":[18,31,43,46,54,75,97,108],"BSTA":[20,66],"were":[23],"investigated":[24],"metal-insulator-metal":[26],"(MIM)":[27],"structure.":[28,48],"No":[29],"diffusion":[30],"ions,":[32],"from":[33],"or":[37],"substrate,":[39],"is":[40,112,127],"observed":[41],"because":[42],"MIM":[47],"The":[49,65,137],"Root":[50],"Mean":[51],"Square":[52],"roughness":[53],"1.04nm":[55],"shows":[56,69],"that":[57,85],"grew":[60],"well":[61],"substrate.":[64],"much":[71],"higher":[72,133],"dielectric":[73],"constant":[74],"about":[76,98],"130":[77],"than":[78,122],"conventional":[79],"gate":[80],"insulators":[81],"and":[82,124,145],"high-k":[83],"materials":[84],"are":[86],"currently":[87],"used":[88],"in":[89],"Thin":[90],"Film":[91],"Transistors.":[92],"Low":[93],"leakage":[94],"current":[95],"density":[96],"10-8":[99],"A/cm2":[100],"obtained":[102],"at":[103,117,132],"an":[104],"applied":[105,118,134],"electric":[106,119,135],"field":[107],"500kV/cm.":[109],"Schottky":[110,138],"emission":[111],"dominant":[114,129],"conduction":[115,130],"mechanism":[116,131],"fields":[120],"lower":[121],"500kV/cm":[123],"Fowler-Nordheim":[125],"tunneling":[126],"fields.":[136],"barrier":[139],"height":[140],"between":[141],"Pt":[143],"electrode":[144],"estimated":[151],"to":[152],"be":[153],"0.75eV.":[154]},"counts_by_year":[{"year":2012,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}