{"id":"https://openalex.org/W2047339936","doi":"https://doi.org/10.1587/transele.e96.c.859","title":"Self-Cascode MOSFET with a Self-Biased Body Effect for Ultra-Low-Power Voltage Reference Generator","display_name":"Self-Cascode MOSFET with a Self-Biased Body Effect for Ultra-Low-Power Voltage Reference Generator","publication_year":2013,"publication_date":"2013-01-01","ids":{"openalex":"https://openalex.org/W2047339936","doi":"https://doi.org/10.1587/transele.e96.c.859","mag":"2047339936"},"language":"en","primary_location":{"id":"doi:10.1587/transele.e96.c.859","is_oa":false,"landing_page_url":"https://doi.org/10.1587/transele.e96.c.859","pdf_url":null,"source":{"id":"https://openalex.org/S2489501747","display_name":"IEICE Transactions on Electronics","issn_l":"0916-8524","issn":["0916-8524","1745-1353"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Transactions on Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5071772595","display_name":"Hao Zhang","orcid":"https://orcid.org/0000-0002-5765-940X"},"institutions":[{"id":"https://openalex.org/I150744194","display_name":"Waseda University","ror":"https://ror.org/00ntfnx83","country_code":"JP","type":"education","lineage":["https://openalex.org/I150744194"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Hao ZHANG","raw_affiliation_strings":["Graduate School of Information, Production and System, Waseda University"],"affiliations":[{"raw_affiliation_string":"Graduate School of Information, Production and System, Waseda University","institution_ids":["https://openalex.org/I150744194"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016619578","display_name":"Mengshu Huang","orcid":null},"institutions":[{"id":"https://openalex.org/I150744194","display_name":"Waseda University","ror":"https://ror.org/00ntfnx83","country_code":"JP","type":"education","lineage":["https://openalex.org/I150744194"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Mengshu HUANG","raw_affiliation_strings":["Graduate School of Information, Production and System, Waseda University"],"affiliations":[{"raw_affiliation_string":"Graduate School of Information, Production and System, Waseda University","institution_ids":["https://openalex.org/I150744194"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100744381","display_name":"Yimeng Zhang","orcid":"https://orcid.org/0000-0002-7342-1012"},"institutions":[{"id":"https://openalex.org/I150744194","display_name":"Waseda University","ror":"https://ror.org/00ntfnx83","country_code":"JP","type":"education","lineage":["https://openalex.org/I150744194"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yimeng ZHANG","raw_affiliation_strings":["Graduate School of Information, Production and System, Waseda University"],"affiliations":[{"raw_affiliation_string":"Graduate School of Information, Production and System, Waseda University","institution_ids":["https://openalex.org/I150744194"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111951982","display_name":"Tsutomu Yoshihara","orcid":null},"institutions":[{"id":"https://openalex.org/I150744194","display_name":"Waseda University","ror":"https://ror.org/00ntfnx83","country_code":"JP","type":"education","lineage":["https://openalex.org/I150744194"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tsutomu YOSHIHARA","raw_affiliation_strings":["Graduate School of Information, Production and System, Waseda University"],"affiliations":[{"raw_affiliation_string":"Graduate School of Information, Production and System, Waseda University","institution_ids":["https://openalex.org/I150744194"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5071772595"],"corresponding_institution_ids":["https://openalex.org/I150744194"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.10726505,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"E96.C","issue":"6","first_page":"859","last_page":"866"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.7135432958602905},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.708301842212677},{"id":"https://openalex.org/keywords/cascode","display_name":"Cascode","score":0.6540603041648865},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.635017991065979},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.5887309312820435},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5754221081733704},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5507378578186035},{"id":"https://openalex.org/keywords/bandgap-voltage-reference","display_name":"Bandgap voltage reference","score":0.5504058003425598},{"id":"https://openalex.org/keywords/overdrive-voltage","display_name":"Overdrive voltage","score":0.5200043320655823},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5119801759719849},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.501093864440918},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4790690839290619},{"id":"https://openalex.org/keywords/dropout-voltage","display_name":"Dropout voltage","score":0.47813236713409424},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.4172019362449646},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2680584490299225},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.25667059421539307}],"concepts":[{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.7135432958602905},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.708301842212677},{"id":"https://openalex.org/C2775946640","wikidata":"https://www.wikidata.org/wiki/Q1735017","display_name":"Cascode","level":4,"score":0.6540603041648865},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.635017991065979},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.5887309312820435},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5754221081733704},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5507378578186035},{"id":"https://openalex.org/C127033052","wikidata":"https://www.wikidata.org/wiki/Q48635","display_name":"Bandgap voltage reference","level":5,"score":0.5504058003425598},{"id":"https://openalex.org/C195905723","wikidata":"https://www.wikidata.org/wiki/Q7113634","display_name":"Overdrive voltage","level":5,"score":0.5200043320655823},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5119801759719849},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.501093864440918},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4790690839290619},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.47813236713409424},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.4172019362449646},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2680584490299225},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.25667059421539307}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/transele.e96.c.859","is_oa":false,"landing_page_url":"https://doi.org/10.1587/transele.e96.c.859","pdf_url":null,"source":{"id":"https://openalex.org/S2489501747","display_name":"IEICE Transactions on Electronics","issn_l":"0916-8524","issn":["0916-8524","1745-1353"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Transactions on Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8700000047683716}],"awards":[],"funders":[{"id":"https://openalex.org/F4320309074","display_name":"Cadence Design Systems","ror":"https://ror.org/04w8xa018"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W613096942","https://openalex.org/W1491082069","https://openalex.org/W1566916904","https://openalex.org/W1650807027","https://openalex.org/W1903589471","https://openalex.org/W2014617689","https://openalex.org/W2018896836","https://openalex.org/W2032998311","https://openalex.org/W2038635876","https://openalex.org/W2092954710","https://openalex.org/W2097825079","https://openalex.org/W2099144852","https://openalex.org/W2102091251","https://openalex.org/W2134071093","https://openalex.org/W2139801901","https://openalex.org/W2140823559","https://openalex.org/W2141207690","https://openalex.org/W2146324717","https://openalex.org/W2147081564","https://openalex.org/W2150180084","https://openalex.org/W2151940289"],"related_works":["https://openalex.org/W2410236648","https://openalex.org/W1564892798","https://openalex.org/W2087168948","https://openalex.org/W2108212541","https://openalex.org/W3157076093","https://openalex.org/W2743722923","https://openalex.org/W2678139733","https://openalex.org/W4220980193","https://openalex.org/W2128111561","https://openalex.org/W2349647559"],"abstract_inverted_index":{"This":[0],"paper":[1],"proposes":[2],"a":[3,24,45,84],"novel":[4],"approach":[5],"for":[6],"implementing":[7],"an":[8],"ultra-low-power":[9],"voltage":[10,40,48,72,91,99],"reference":[11,41,71],"using":[12],"the":[13,20,31,36,39,50,70,77,103],"structure":[14,37],"of":[15],"self-cascode":[16],"MOSFET,":[17],"operating":[18],"in":[19,35,62],"subthreshold":[21],"region":[22],"with":[23,57],"self-biased":[25],"body":[26],"effect.":[27],"The":[28,53,90,96,111],"difference":[29],"between":[30],"two":[32],"gate-source":[33],"voltages":[34],"enables":[38],"circuit":[42,54],"to":[43,88],"produce":[44],"low":[46],"output":[47],"below":[49],"threshold":[51],"voltage.":[52],"is":[55,73,80,94,100,106,115],"designed":[56],"only":[58],"MOSFETs":[59],"and":[60,76,102],"fabricated":[61],"standard":[63],"0.18-\u00b5m":[64],"CMOS":[65],"technology.":[66],"Measurements":[67],"show":[68],"that":[69],"about":[74,81],"107.5mV,":[75],"temperature":[78],"coefficient":[79],"40ppm/\u00b0C,":[82],"at":[83,109],"range":[85],"from":[86],"-20\u00b0C":[87],"80\u00b0C.":[89,110],"line":[92],"sensitivity":[93],"0.017%/V.":[95],"minimum":[97],"supply":[98,104],"0.85V,":[101],"current":[105],"approximately":[107],"24nA":[108],"occupied":[112],"chip":[113],"area":[114],"around":[116],"0.028mm2.":[117]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}