{"id":"https://openalex.org/W1966908602","doi":"https://doi.org/10.1587/transele.e92.c.671","title":"A Latchup-Free ESD Power Clamp Circuit with Stacked-Bipolar Devices for High-Voltage Integrated Circuits","display_name":"A Latchup-Free ESD Power Clamp Circuit with Stacked-Bipolar Devices for High-Voltage Integrated Circuits","publication_year":2009,"publication_date":"2009-01-01","ids":{"openalex":"https://openalex.org/W1966908602","doi":"https://doi.org/10.1587/transele.e92.c.671","mag":"1966908602"},"language":"en","primary_location":{"id":"doi:10.1587/transele.e92.c.671","is_oa":false,"landing_page_url":"https://doi.org/10.1587/transele.e92.c.671","pdf_url":null,"source":{"id":"https://openalex.org/S2489501747","display_name":"IEICE Transactions on Electronics","issn_l":"0916-8524","issn":["0916-8524","1745-1353"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Transactions on Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100422623","display_name":"Jae\u2010Young Park","orcid":"https://orcid.org/0009-0004-6095-0339"},"institutions":[{"id":"https://openalex.org/I4210111902","display_name":"Dongbu HiTek (South Korea)","ror":"https://ror.org/018z3cr21","country_code":"KR","type":"company","lineage":["https://openalex.org/I4210111902"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Jae-Young PARK","raw_affiliation_strings":["DE Team, TE Center, Dongbu HiTek"],"affiliations":[{"raw_affiliation_string":"DE Team, TE Center, Dongbu HiTek","institution_ids":["https://openalex.org/I4210111902"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056961416","display_name":"Jong-Kyu Song","orcid":null},"institutions":[{"id":"https://openalex.org/I4210111902","display_name":"Dongbu HiTek (South Korea)","ror":"https://ror.org/018z3cr21","country_code":"KR","type":"company","lineage":["https://openalex.org/I4210111902"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jong-Kyu SONG","raw_affiliation_strings":["DE Team, TE Center, Dongbu HiTek"],"affiliations":[{"raw_affiliation_string":"DE Team, TE Center, Dongbu HiTek","institution_ids":["https://openalex.org/I4210111902"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088893383","display_name":"Chang-Soo Jang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210111902","display_name":"Dongbu HiTek (South Korea)","ror":"https://ror.org/018z3cr21","country_code":"KR","type":"company","lineage":["https://openalex.org/I4210111902"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chang-Soo JANG","raw_affiliation_strings":["DE Team, TE Center, Dongbu HiTek"],"affiliations":[{"raw_affiliation_string":"DE Team, TE Center, Dongbu HiTek","institution_ids":["https://openalex.org/I4210111902"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081817442","display_name":"San-Hong Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I4210111902","display_name":"Dongbu HiTek (South Korea)","ror":"https://ror.org/018z3cr21","country_code":"KR","type":"company","lineage":["https://openalex.org/I4210111902"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"San-Hong KIM","raw_affiliation_strings":["DE Team, TE Center, Dongbu HiTek"],"affiliations":[{"raw_affiliation_string":"DE Team, TE Center, Dongbu HiTek","institution_ids":["https://openalex.org/I4210111902"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100909017","display_name":"Won-Young Jung","orcid":null},"institutions":[{"id":"https://openalex.org/I4210111902","display_name":"Dongbu HiTek (South Korea)","ror":"https://ror.org/018z3cr21","country_code":"KR","type":"company","lineage":["https://openalex.org/I4210111902"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Won-Young JUNG","raw_affiliation_strings":["DE Team, TE Center, Dongbu HiTek"],"affiliations":[{"raw_affiliation_string":"DE Team, TE Center, Dongbu HiTek","institution_ids":["https://openalex.org/I4210111902"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5039621391","display_name":"Taek\u2010Soo Kim","orcid":"https://orcid.org/0000-0002-2825-7778"},"institutions":[{"id":"https://openalex.org/I4210111902","display_name":"Dongbu HiTek (South Korea)","ror":"https://ror.org/018z3cr21","country_code":"KR","type":"company","lineage":["https://openalex.org/I4210111902"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Taek-Soo KIM","raw_affiliation_strings":["DE Team, TE Center, Dongbu HiTek"],"affiliations":[{"raw_affiliation_string":"DE Team, TE Center, Dongbu HiTek","institution_ids":["https://openalex.org/I4210111902"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5100422623"],"corresponding_institution_ids":["https://openalex.org/I4210111902"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.05628555,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"E92-C","issue":"5","first_page":"671","last_page":"675"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/snapback","display_name":"Snapback","score":0.979732871055603},{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.6648291349411011},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.6366256475448608},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5745789408683777},{"id":"https://openalex.org/keywords/clamper","display_name":"Clamper","score":0.5329428911209106},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.5175801515579224},{"id":"https://openalex.org/keywords/high-voltage","display_name":"High voltage","score":0.4896893799304962},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4547927975654602},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.44563838839530945},{"id":"https://openalex.org/keywords/voltage-spike","display_name":"Voltage spike","score":0.4239116609096527},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.42337700724601746},{"id":"https://openalex.org/keywords/transient-voltage-suppressor","display_name":"Transient voltage suppressor","score":0.41929030418395996},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.4104555547237396},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.39868807792663574},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3860529959201813},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3671554923057556},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.17964661121368408},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.17165976762771606},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.16540804505348206},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.06939080357551575}],"concepts":[{"id":"https://openalex.org/C2779888857","wikidata":"https://www.wikidata.org/wiki/Q18378810","display_name":"Snapback","level":4,"score":0.979732871055603},{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.6648291349411011},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6366256475448608},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5745789408683777},{"id":"https://openalex.org/C64881904","wikidata":"https://www.wikidata.org/wiki/Q825778","display_name":"Clamper","level":3,"score":0.5329428911209106},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.5175801515579224},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.4896893799304962},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4547927975654602},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.44563838839530945},{"id":"https://openalex.org/C200980170","wikidata":"https://www.wikidata.org/wiki/Q2025787","display_name":"Voltage spike","level":4,"score":0.4239116609096527},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.42337700724601746},{"id":"https://openalex.org/C14915586","wikidata":"https://www.wikidata.org/wiki/Q1653998","display_name":"Transient voltage suppressor","level":3,"score":0.41929030418395996},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4104555547237396},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.39868807792663574},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3860529959201813},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3671554923057556},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.17964661121368408},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.17165976762771606},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.16540804505348206},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06939080357551575},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/transele.e92.c.671","is_oa":false,"landing_page_url":"https://doi.org/10.1587/transele.e92.c.671","pdf_url":null,"source":{"id":"https://openalex.org/S2489501747","display_name":"IEICE Transactions on Electronics","issn_l":"0916-8524","issn":["0916-8524","1745-1353"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Transactions on Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8700000047683716}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1518822376","https://openalex.org/W1910728869","https://openalex.org/W1966864710","https://openalex.org/W1984240399","https://openalex.org/W2071778906","https://openalex.org/W2102348017","https://openalex.org/W2132871374","https://openalex.org/W2135466537","https://openalex.org/W2522512706"],"related_works":["https://openalex.org/W2075382567","https://openalex.org/W1490578062","https://openalex.org/W4223435591","https://openalex.org/W2019344161","https://openalex.org/W1496293429","https://openalex.org/W1936266116","https://openalex.org/W2046430182","https://openalex.org/W1565992733","https://openalex.org/W2568298254","https://openalex.org/W1966908602"],"abstract_inverted_index":{"The":[0,83],"holding":[1,85],"voltage":[2,86],"of":[3,57,87],"high-voltage":[4,26],"devices":[5,44,65,90],"under":[6],"the":[7,19,32,37,48,58,79,88,92,100],"snapback":[8,93],"breakdown":[9,94],"condition":[10,95],"has":[11],"been":[12],"known":[13],"to":[14,28,31,77],"be":[15,29,97],"much":[16],"smaller":[17],"than":[18,99],"power":[20,50,60,101],"supply":[21,102],"voltage.":[22,103],"Such":[23],"characteristics":[24],"cause":[25],"ICs":[27],"susceptible":[30],"transient":[33],"latch-up":[34],"failure":[35],"in":[36,71,91],"practical":[38],"system":[39],"applications,":[40],"especially":[41],"when":[42],"these":[43],"are":[45],"used":[46],"as":[47],"ESD":[49,59,81],"clamp":[51,61],"circuit.":[52],"A":[53],"new":[54],"latchup-free":[55],"design":[56],"circuit":[62],"with":[63],"stacked-bipolar":[64,89],"is":[66],"proposed":[67],"and":[68],"successfully":[69],"verified":[70],"a":[72],"0.35\u00b5m":[73],"BCD":[74],"(Bipolar-CMOS-DMOS)":[75],"process":[76],"achieve":[78],"desired":[80],"level.":[82],"total":[84],"can":[96],"larger":[98]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}