{"id":"https://openalex.org/W3133318595","doi":"https://doi.org/10.1587/transele.2021mmi0003","title":"High-Power High-Efficiency GaN HEMT Doherty Amplifiers for Base Station Applications","display_name":"High-Power High-Efficiency GaN HEMT Doherty Amplifiers for Base Station Applications","publication_year":2021,"publication_date":"2021-02-23","ids":{"openalex":"https://openalex.org/W3133318595","doi":"https://doi.org/10.1587/transele.2021mmi0003","mag":"3133318595"},"language":"en","primary_location":{"id":"doi:10.1587/transele.2021mmi0003","is_oa":true,"landing_page_url":"https://doi.org/10.1587/transele.2021mmi0003","pdf_url":"https://www.jstage.jst.go.jp/article/transele/E104.C/10/E104.C_2021MMI0003/_pdf","source":{"id":"https://openalex.org/S2489501747","display_name":"IEICE Transactions on Electronics","issn_l":"0916-8524","issn":["0916-8524","1745-1353"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Transactions on Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://www.jstage.jst.go.jp/article/transele/E104.C/10/E104.C_2021MMI0003/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5082721528","display_name":"Andrei Grebennikov","orcid":"https://orcid.org/0000-0003-2636-7049"},"institutions":[{"id":"https://openalex.org/I161311093","display_name":"Sumitomo Electric Industries (United States)","ror":"https://ror.org/03msrn925","country_code":"US","type":"company","lineage":["https://openalex.org/I161311093"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Andrei GREBENNIKOV","raw_affiliation_strings":["Sumitomo Electric Europe Ltd"],"affiliations":[{"raw_affiliation_string":"Sumitomo Electric Europe Ltd","institution_ids":["https://openalex.org/I161311093"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002320026","display_name":"James Wong","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"James WONG","raw_affiliation_strings":["Sumitomo Electric Device Innovations Inc"],"affiliations":[{"raw_affiliation_string":"Sumitomo Electric Device Innovations Inc","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5015815714","display_name":"Hiroaki Deguchi","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hiroaki DEGUCHI","raw_affiliation_strings":["Sumitomo Electric Device Innovations Inc"],"affiliations":[{"raw_affiliation_string":"Sumitomo Electric Device Innovations Inc","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5082721528"],"corresponding_institution_ids":["https://openalex.org/I161311093"],"apc_list":null,"apc_paid":null,"fwci":0.2024,"has_fulltext":true,"cited_by_count":3,"citation_normalized_percentile":{"value":0.48618283,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"E104.C","issue":"10","first_page":"488","last_page":"495"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.864716649055481},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.7498920559883118},{"id":"https://openalex.org/keywords/power-gain","display_name":"Power gain","score":0.6494563817977905},{"id":"https://openalex.org/keywords/power-bandwidth","display_name":"Power bandwidth","score":0.6028724312782288},{"id":"https://openalex.org/keywords/broadband","display_name":"Broadband","score":0.5929014086723328},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5714422464370728},{"id":"https://openalex.org/keywords/dbm","display_name":"dBm","score":0.5699617862701416},{"id":"https://openalex.org/keywords/power-added-efficiency","display_name":"Power-added efficiency","score":0.5467416644096375},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5115195512771606},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.447984516620636},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4304814338684082},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4185379147529602},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.3776870369911194},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.336603581905365},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.2782682776451111},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.27464500069618225},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.16547664999961853}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.864716649055481},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7498920559883118},{"id":"https://openalex.org/C98377741","wikidata":"https://www.wikidata.org/wiki/Q7236514","display_name":"Power gain","level":4,"score":0.6494563817977905},{"id":"https://openalex.org/C191907038","wikidata":"https://www.wikidata.org/wiki/Q7236476","display_name":"Power bandwidth","level":5,"score":0.6028724312782288},{"id":"https://openalex.org/C509933004","wikidata":"https://www.wikidata.org/wiki/Q194163","display_name":"Broadband","level":2,"score":0.5929014086723328},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5714422464370728},{"id":"https://openalex.org/C94105702","wikidata":"https://www.wikidata.org/wiki/Q777017","display_name":"dBm","level":4,"score":0.5699617862701416},{"id":"https://openalex.org/C129231560","wikidata":"https://www.wikidata.org/wiki/Q7236462","display_name":"Power-added efficiency","level":5,"score":0.5467416644096375},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5115195512771606},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.447984516620636},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4304814338684082},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4185379147529602},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.3776870369911194},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.336603581905365},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.2782682776451111},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.27464500069618225},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.16547664999961853},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/transele.2021mmi0003","is_oa":true,"landing_page_url":"https://doi.org/10.1587/transele.2021mmi0003","pdf_url":"https://www.jstage.jst.go.jp/article/transele/E104.C/10/E104.C_2021MMI0003/_pdf","source":{"id":"https://openalex.org/S2489501747","display_name":"IEICE Transactions on Electronics","issn_l":"0916-8524","issn":["0916-8524","1745-1353"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Transactions on Electronics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/transele.2021mmi0003","is_oa":true,"landing_page_url":"https://doi.org/10.1587/transele.2021mmi0003","pdf_url":"https://www.jstage.jst.go.jp/article/transele/E104.C/10/E104.C_2021MMI0003/_pdf","source":{"id":"https://openalex.org/S2489501747","display_name":"IEICE Transactions on Electronics","issn_l":"0916-8524","issn":["0916-8524","1745-1353"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Transactions on Electronics","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.8700000047683716,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W3133318595.pdf","grobid_xml":"https://content.openalex.org/works/W3133318595.grobid-xml"},"referenced_works_count":29,"referenced_works":["https://openalex.org/W1487635981","https://openalex.org/W1505850555","https://openalex.org/W1516040568","https://openalex.org/W1535714543","https://openalex.org/W1870752445","https://openalex.org/W1966283923","https://openalex.org/W1972121933","https://openalex.org/W1985212404","https://openalex.org/W2036015442","https://openalex.org/W2036889701","https://openalex.org/W2067742614","https://openalex.org/W2106089357","https://openalex.org/W2118688384","https://openalex.org/W2120123761","https://openalex.org/W2123659484","https://openalex.org/W2136282877","https://openalex.org/W2145166686","https://openalex.org/W2157802116","https://openalex.org/W2163964946","https://openalex.org/W2172096036","https://openalex.org/W2512722055","https://openalex.org/W2761805820","https://openalex.org/W2761911301","https://openalex.org/W2793168931","https://openalex.org/W2914441526","https://openalex.org/W2971509051","https://openalex.org/W3143828207","https://openalex.org/W3145698219","https://openalex.org/W3151026862"],"related_works":["https://openalex.org/W2355154599","https://openalex.org/W2357901411","https://openalex.org/W2591212050","https://openalex.org/W2512837728","https://openalex.org/W3108616848","https://openalex.org/W2144336680","https://openalex.org/W3010230242","https://openalex.org/W4362501562","https://openalex.org/W4294086117","https://openalex.org/W2385846443"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"the":[3,120],"high-power":[4,135],"high-efficiency":[5,117],"asymmetric":[6,32],"Doherty":[7,33,124,138],"power":[8,39,53,71,83,91,104,149,157,174],"amplifiers":[9],"based":[10],"on":[11],"high-voltage":[12],"GaN":[13,144],"HEMT":[14,145],"devices":[15],"with":[16,43,75,95,141],"internal":[17],"input":[18],"matching":[19],"for":[20],"base":[21],"station":[22],"applications":[23],"are":[24],"proposed":[25],"and":[26,49,81,88,101,128,164],"described.":[27],"For":[28],"a":[29,44,50,62,76,96,102,116,134,142,147,155,165,177],"three-way":[30],"1:2":[31],"structures,":[34],"an":[35,69,89],"exceptionally":[36],"high":[37],"output":[38,70,90],"of":[40,47,55,65,72,79,85,92,99,106,122,150,159,168,180],"1":[41],"kW":[42],"peak":[45,77,97],"efficiency":[46,78,98,167],"83%":[48],"linear":[51,82,103,156],"flat":[52],"gain":[54,84,105,158],"about":[56],"15":[57],"dB":[58,87,108,163],"was":[59],"achieved":[60],"in":[61,130,176],"frequency":[63,178],"band":[64],"2.11-2.17":[66],"GHz,":[67],"whereas":[68],"59.5":[73],"dBm":[74,94],"78%":[80],"12":[86],"59.2":[93],"65%":[100],"13":[107,162],"were":[109,183],"obtained":[110],"across":[111],"1.8-2.2":[112],"GHz.":[113],"To":[114],"provide":[115],"broadband":[118,136],"operation,":[119],"concept":[121],"inverted":[123,137],"structure":[125],"is":[126],"applied":[127],"described":[129],"detail.":[131],"By":[132],"using":[133],"amplifier":[139],"architecture":[140],"2\u00d7120-W":[143],"transistor,":[146],"saturated":[148],"greater":[151,160,169],"than":[152,161,170],"54":[153],"dBm,":[154],"drain":[166],"50%":[171],"at":[172],"7-dB":[173],"backoff":[175],"bandwidth":[179],"1.8-2.7":[181],"GHz":[182],"obtained.":[184]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2021,"cited_by_count":1}],"updated_date":"2026-03-26T15:22:09.906841","created_date":"2025-10-10T00:00:00"}