{"id":"https://openalex.org/W4285110701","doi":"https://doi.org/10.1587/transele.2021fup0004","title":"The Effect of Inter Layers on the Ferroelectric Undoped HfO<sub>2</sub> Formation","display_name":"The Effect of Inter Layers on the Ferroelectric Undoped HfO<sub>2</sub> Formation","publication_year":2022,"publication_date":"2022-06-26","ids":{"openalex":"https://openalex.org/W4285110701","doi":"https://doi.org/10.1587/transele.2021fup0004"},"language":"en","primary_location":{"id":"doi:10.1587/transele.2021fup0004","is_oa":false,"landing_page_url":"https://doi.org/10.1587/transele.2021fup0004","pdf_url":null,"source":{"id":"https://openalex.org/S2489501747","display_name":"IEICE Transactions on Electronics","issn_l":"0916-8524","issn":["0916-8524","1745-1353"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Transactions on Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5082298405","display_name":"Masakazu Tanuma","orcid":null},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masakazu TANUMA","raw_affiliation_strings":["Tokyo Institute of Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Institute of Technology","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101960098","display_name":"Joong\u2010Won Shin","orcid":"https://orcid.org/0000-0003-1066-2748"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Joong-Won SHIN","raw_affiliation_strings":["Tokyo Institute of Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Institute of Technology","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5090919175","display_name":"Shun-ichiro Ohmi","orcid":"https://orcid.org/0000-0002-3963-572X"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shun-ichiro OHMI","raw_affiliation_strings":["Tokyo Institute of Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Institute of Technology","institution_ids":["https://openalex.org/I114531698"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.277,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.52579978,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":"E105.C","issue":"10","first_page":"584","last_page":"588"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.989799976348877,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12046","display_name":"MXene and MAX Phase Materials","score":0.9894999861717224,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7545835971832275},{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.66171795129776},{"id":"https://openalex.org/keywords/annealing","display_name":"Annealing (glass)","score":0.6223732233047485},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"Subthreshold swing","score":0.5836511254310608},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.5779911279678345},{"id":"https://openalex.org/keywords/equivalent-oxide-thickness","display_name":"Equivalent oxide thickness","score":0.5541059970855713},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5336153507232666},{"id":"https://openalex.org/keywords/chemical-vapor-deposition","display_name":"Chemical vapor deposition","score":0.4914900064468384},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.4867077171802521},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.48347336053848267},{"id":"https://openalex.org/keywords/saturation","display_name":"Saturation (graph theory)","score":0.47409021854400635},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2614414095878601},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.18588799238204956},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.18558725714683533},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.14605891704559326},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.13257083296775818},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.11440292000770569},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.11160466074943542},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.09623599052429199},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.055783599615097046}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7545835971832275},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.66171795129776},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6223732233047485},{"id":"https://openalex.org/C2982823382","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold swing","level":5,"score":0.5836511254310608},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.5779911279678345},{"id":"https://openalex.org/C52780932","wikidata":"https://www.wikidata.org/wiki/Q994752","display_name":"Equivalent oxide thickness","level":5,"score":0.5541059970855713},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5336153507232666},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.4914900064468384},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.4867077171802521},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.48347336053848267},{"id":"https://openalex.org/C9930424","wikidata":"https://www.wikidata.org/wiki/Q7426587","display_name":"Saturation (graph theory)","level":2,"score":0.47409021854400635},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2614414095878601},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.18588799238204956},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.18558725714683533},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.14605891704559326},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.13257083296775818},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.11440292000770569},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11160466074943542},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.09623599052429199},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.055783599615097046},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C114614502","wikidata":"https://www.wikidata.org/wiki/Q76592","display_name":"Combinatorics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/transele.2021fup0004","is_oa":false,"landing_page_url":"https://doi.org/10.1587/transele.2021fup0004","pdf_url":null,"source":{"id":"https://openalex.org/S2489501747","display_name":"IEICE Transactions on Electronics","issn_l":"0916-8524","issn":["0916-8524","1745-1353"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Transactions on Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":31,"referenced_works":["https://openalex.org/W1518237432","https://openalex.org/W1625170149","https://openalex.org/W1971689596","https://openalex.org/W1977904220","https://openalex.org/W1983604260","https://openalex.org/W2005691559","https://openalex.org/W2012512650","https://openalex.org/W2076972388","https://openalex.org/W2117517212","https://openalex.org/W2126247922","https://openalex.org/W2129733471","https://openalex.org/W2160395018","https://openalex.org/W2334220755","https://openalex.org/W2500525874","https://openalex.org/W2517480624","https://openalex.org/W2606793363","https://openalex.org/W2787990812","https://openalex.org/W2791916343","https://openalex.org/W2796488434","https://openalex.org/W2800070060","https://openalex.org/W2802654133","https://openalex.org/W2808007855","https://openalex.org/W2890549376","https://openalex.org/W2915804625","https://openalex.org/W2947893182","https://openalex.org/W3032652836","https://openalex.org/W3041848117","https://openalex.org/W3123044827","https://openalex.org/W3137366391","https://openalex.org/W3163080880","https://openalex.org/W3182594412"],"related_works":["https://openalex.org/W2795319754","https://openalex.org/W2410108108","https://openalex.org/W2248971758","https://openalex.org/W4327948915","https://openalex.org/W1974020084","https://openalex.org/W2129539607","https://openalex.org/W2418058283","https://openalex.org/W3095125871","https://openalex.org/W2997278585","https://openalex.org/W4285110701"],"abstract_inverted_index":{"In":[0,23,50],"this":[1],"research,":[2],"we":[3],"investigated":[4],"the":[5,18],"effect":[6],"of":[7],"Hf":[8,28,81,108],"inter":[9,29,82,109],"layer":[10],"and":[11,95],"chemical":[12,55],"oxide":[13,32],"on":[14,17],"Si(100)":[15],"substrate":[16],"ferroelectric":[19],"undoped":[20],"HfO2":[21,45,79],"deposition.":[22],"case":[24,51],"with":[25,46,52,76],"1":[26],"nm-thick":[27,44,54,70,78],"layer,":[30],"equivalent":[31],"thickness":[33],"(EOT)":[34],"was":[35,58,74,87,98],"decreased":[36,59],"from":[37,60,89,100],"6.0":[38],"to":[39,62,92,103],"4.8":[40],"nm":[41,64],"for":[42,68],"10":[43,77],"decreasing":[47],"annealing":[48],"temperature.":[49],"0.5":[53],"oxide,":[56],"EOT":[57],"3.9":[61],"3.6":[63],"in":[65],"MFS":[66],"diodes":[67],"5":[69],"HfO2.":[71],"The":[72,84],"MFSFET":[73],"fabricated":[75],"utilizing":[80],"layer.":[83,110],"subthreshold":[85],"swing":[86],"improved":[88],"240":[90],"mV/dec.":[91,94],"120":[93],"saturation":[96],"mobility":[97],"increased":[99],"70":[101],"cm2/(Vs)":[102,105],"140":[104],"by":[106],"inserting":[107]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}