{"id":"https://openalex.org/W2999516765","doi":"https://doi.org/10.1587/transele.2019ecs6017","title":"An Enhanced Well-Changed GGNMOS for 3.3-V ESD Protection in 0.13-\u00b5m SOI Process","display_name":"An Enhanced Well-Changed GGNMOS for 3.3-V ESD Protection in 0.13-\u00b5m SOI Process","publication_year":2020,"publication_date":"2020-01-06","ids":{"openalex":"https://openalex.org/W2999516765","doi":"https://doi.org/10.1587/transele.2019ecs6017","mag":"2999516765"},"language":"en","primary_location":{"id":"doi:10.1587/transele.2019ecs6017","is_oa":false,"landing_page_url":"https://doi.org/10.1587/transele.2019ecs6017","pdf_url":null,"source":{"id":"https://openalex.org/S2489501747","display_name":"IEICE Transactions on Electronics","issn_l":"0916-8524","issn":["0916-8524","1745-1353"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Transactions on Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101756304","display_name":"Mo Zhou","orcid":"https://orcid.org/0000-0002-3703-9625"},"institutions":[{"id":"https://openalex.org/I126520041","display_name":"University of Science and Technology of China","ror":"https://ror.org/04c4dkn09","country_code":"CN","type":"education","lineage":["https://openalex.org/I126520041","https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210147322","display_name":"Shanghai Institute of Microsystem and Information Technology","ror":"https://ror.org/04nytyj38","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Mo ZHOU","raw_affiliation_strings":["Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences","University of Science and Technology of China"],"affiliations":[{"raw_affiliation_string":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences","institution_ids":["https://openalex.org/I4210147322"]},{"raw_affiliation_string":"University of Science and Technology of China","institution_ids":["https://openalex.org/I126520041"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085620653","display_name":"Yi Shan","orcid":"https://orcid.org/0000-0002-6513-1189"},"institutions":[{"id":"https://openalex.org/I4210147322","display_name":"Shanghai Institute of Microsystem and Information Technology","ror":"https://ror.org/04nytyj38","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yi SHAN","raw_affiliation_strings":["Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"],"affiliations":[{"raw_affiliation_string":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences","institution_ids":["https://openalex.org/I4210147322"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5000155541","display_name":"Yemin Dong","orcid":"https://orcid.org/0000-0002-4277-5547"},"institutions":[{"id":"https://openalex.org/I4210147322","display_name":"Shanghai Institute of Microsystem and Information Technology","ror":"https://ror.org/04nytyj38","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yemin DONG","raw_affiliation_strings":["Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"],"affiliations":[{"raw_affiliation_string":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences","institution_ids":["https://openalex.org/I4210147322"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5101756304"],"corresponding_institution_ids":["https://openalex.org/I126520041","https://openalex.org/I4210147322"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.00521224,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"E103.C","issue":"6","first_page":"332","last_page":"334"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.7155839204788208},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5788032412528992},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.5561229586601257},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5048709511756897},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.5001242160797119},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4922470152378082},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4857333302497864},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.47041064500808716},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.37529611587524414},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2959163784980774},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.27156174182891846},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.13299453258514404}],"concepts":[{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.7155839204788208},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5788032412528992},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5561229586601257},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5048709511756897},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.5001242160797119},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4922470152378082},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4857333302497864},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.47041064500808716},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.37529611587524414},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2959163784980774},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.27156174182891846},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.13299453258514404},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/transele.2019ecs6017","is_oa":false,"landing_page_url":"https://doi.org/10.1587/transele.2019ecs6017","pdf_url":null,"source":{"id":"https://openalex.org/S2489501747","display_name":"IEICE Transactions on Electronics","issn_l":"0916-8524","issn":["0916-8524","1745-1353"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Transactions on Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6200000047683716,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1972039046","https://openalex.org/W1994975157","https://openalex.org/W2064220227","https://openalex.org/W2807397857","https://openalex.org/W2952755691","https://openalex.org/W3025837123"],"related_works":["https://openalex.org/W2104300577","https://openalex.org/W4206445530","https://openalex.org/W2771786520","https://openalex.org/W2810180604","https://openalex.org/W2325281603","https://openalex.org/W2944964251","https://openalex.org/W2012754971","https://openalex.org/W44660823","https://openalex.org/W2034653092","https://openalex.org/W2101030291"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"an":[3],"enhanced":[4],"well-changed":[5],"GGNMOS":[6],"(EW-GGNMOS)":[7],"is":[8],"proposed":[9],"and":[10,47],"demonstrated.":[11],"The":[12],"new":[13],"device":[14,66],"has":[15,28],"the":[16,20,32],"same":[17],"topology":[18],"as":[19,61],"conventional":[21,53],"3.3V":[22,54,63],"GGNMOS,":[23],"except":[24],"that":[25],"its":[26],"well":[27],"been":[29],"changed":[30],"to":[31,36,52],"1.2V":[33],"p-well.":[34],"Attributed":[35],"higher":[37],"doping":[38],"concentration,":[39],"resulting":[40],"in":[41],"a":[42,62],"much":[43],"lower":[44],"trigger":[45],"voltage":[46],"desirable":[48],"turn-on":[49],"uniformity":[50],"compared":[51],"GGNMOS.":[55],"Therefore,":[56],"we":[57],"can":[58],"use":[59],"EW-GGNMOS":[60],"ESD":[64],"protection":[65],"without":[67],"any":[68],"additional":[69],"process.":[70]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}