{"id":"https://openalex.org/W3015340505","doi":"https://doi.org/10.1587/transele.2019ctp0008","title":"Design of a 45 Gb/s, 98 fJ/bit, 0.02 mm<sup>2</sup> Transimpedance Amplifier with Peaking-Dedicated Inductor in 65-nm CMOS","display_name":"Design of a 45 Gb/s, 98 fJ/bit, 0.02 mm<sup>2</sup> Transimpedance Amplifier with Peaking-Dedicated Inductor in 65-nm CMOS","publication_year":2020,"publication_date":"2020-04-08","ids":{"openalex":"https://openalex.org/W3015340505","doi":"https://doi.org/10.1587/transele.2019ctp0008","mag":"3015340505"},"language":"en","primary_location":{"id":"doi:10.1587/transele.2019ctp0008","is_oa":false,"landing_page_url":"https://doi.org/10.1587/transele.2019ctp0008","pdf_url":null,"source":{"id":"https://openalex.org/S2489501747","display_name":"IEICE Transactions on Electronics","issn_l":"0916-8524","issn":["0916-8524","1745-1353"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Transactions on Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5038761727","display_name":"Akira Tsuchiya","orcid":"https://orcid.org/0000-0002-3299-9328"},"institutions":[{"id":"https://openalex.org/I139159150","display_name":"University of Shiga Prefecture","ror":"https://ror.org/02dvjfw95","country_code":"JP","type":"education","lineage":["https://openalex.org/I139159150"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Akira TSUCHIYA","raw_affiliation_strings":["The University of Shiga Prefecture"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The University of Shiga Prefecture","institution_ids":["https://openalex.org/I139159150"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014616119","display_name":"Akitaka Hiratsuka","orcid":null},"institutions":[{"id":"https://openalex.org/I22299242","display_name":"Kyoto University","ror":"https://ror.org/02kpeqv85","country_code":"JP","type":"education","lineage":["https://openalex.org/I22299242"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Akitaka HIRATSUKA","raw_affiliation_strings":["Kyoto University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kyoto University","institution_ids":["https://openalex.org/I22299242"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019594872","display_name":"Kenji Tanaka","orcid":"https://orcid.org/0000-0003-4438-5830"},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kenji TANAKA","raw_affiliation_strings":["NTT Device Technology Laboratories, NTT Corporation"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Device Technology Laboratories, NTT Corporation","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027253786","display_name":"Hiroyuki Fukuyama","orcid":"https://orcid.org/0000-0003-0753-4403"},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroyuki FUKUYAMA","raw_affiliation_strings":["NTT Device Technology Laboratories, NTT Corporation"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Device Technology Laboratories, NTT Corporation","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071598217","display_name":"Naoki Miura","orcid":"https://orcid.org/0000-0002-4625-5231"},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Naoki MIURA","raw_affiliation_strings":["NTT Device Technology Laboratories, NTT Corporation"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Device Technology Laboratories, NTT Corporation","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015690849","display_name":"Hideyuki Nosaka","orcid":"https://orcid.org/0000-0002-3994-0118"},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hideyuki NOSAKA","raw_affiliation_strings":["NTT Device Technology Laboratories, NTT Corporation"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Device Technology Laboratories, NTT Corporation","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5026865951","display_name":"Hidetoshi Onodera","orcid":"https://orcid.org/0000-0001-5198-0668"},"institutions":[{"id":"https://openalex.org/I22299242","display_name":"Kyoto University","ror":"https://ror.org/02kpeqv85","country_code":"JP","type":"education","lineage":["https://openalex.org/I22299242"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hidetoshi ONODERA","raw_affiliation_strings":["Kyoto University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kyoto University","institution_ids":["https://openalex.org/I22299242"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.2019,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.48302453,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":98},"biblio":{"volume":"E103.C","issue":"10","first_page":"489","last_page":"496"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transimpedance-amplifier","display_name":"Transimpedance amplifier","score":0.96224045753479},{"id":"https://openalex.org/keywords/inductor","display_name":"Inductor","score":0.895912766456604},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7776473164558411},{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.5768781304359436},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.5532707571983337},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.5391460061073303},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5259673595428467},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4667162299156189},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3970702588558197},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3694848418235779},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3545690178871155},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.25024497509002686},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.2489071488380432},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.23381859064102173},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.1288788616657257}],"concepts":[{"id":"https://openalex.org/C92631468","wikidata":"https://www.wikidata.org/wiki/Q215437","display_name":"Transimpedance amplifier","level":5,"score":0.96224045753479},{"id":"https://openalex.org/C144534570","wikidata":"https://www.wikidata.org/wiki/Q5325","display_name":"Inductor","level":3,"score":0.895912766456604},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7776473164558411},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.5768781304359436},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.5532707571983337},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.5391460061073303},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5259673595428467},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4667162299156189},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3970702588558197},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3694848418235779},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3545690178871155},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25024497509002686},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.2489071488380432},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.23381859064102173},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.1288788616657257}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/transele.2019ctp0008","is_oa":false,"landing_page_url":"https://doi.org/10.1587/transele.2019ctp0008","pdf_url":null,"source":{"id":"https://openalex.org/S2489501747","display_name":"IEICE Transactions on Electronics","issn_l":"0916-8524","issn":["0916-8524","1745-1353"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Transactions on Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8500000238418579,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1981559370","https://openalex.org/W1998970380","https://openalex.org/W2002091191","https://openalex.org/W2006969939","https://openalex.org/W2015045494","https://openalex.org/W2040448560","https://openalex.org/W2054106534","https://openalex.org/W2101269566","https://openalex.org/W2102461235","https://openalex.org/W2113959004","https://openalex.org/W2471221252","https://openalex.org/W2760403670","https://openalex.org/W2790656631","https://openalex.org/W2955763667","https://openalex.org/W3021423154"],"related_works":["https://openalex.org/W1548231692","https://openalex.org/W2901662850","https://openalex.org/W2089646818","https://openalex.org/W2563596277","https://openalex.org/W4285244579","https://openalex.org/W2128713590","https://openalex.org/W2016099574","https://openalex.org/W2229772108","https://openalex.org/W98453623","https://openalex.org/W2340624421"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,57,87],"design":[4,45],"of":[5,26,47,60],"CMOS":[6],"transimpedance":[7,108],"amplifier":[8],"(TIA)":[9],"and":[10,18,40,63,110],"peaking":[11,53,82],"inductor":[12],"for":[13,73],"high":[14,23],"speed,":[15],"low":[16],"power":[17,39,113],"small":[19],"area.":[20],"To":[21,43],"realize":[22],"density":[24],"integration":[25],"optical":[27],"I/O,":[28],"area":[29,96],"reduction":[30],"is":[31,84,97],"an":[32],"important":[33],"figure":[34],"as":[35,37],"well":[36],"bandwidth,":[38],"so":[41],"on.":[42],"determine":[44],"parameters":[46],"multi-stage":[48],"inverter-type":[49],"TIA":[50,116],"(INV-TIA)":[51],"with":[52,80,105],"inductors,":[54,93],"we":[55],"derive":[56],"simplified":[58],"model":[59],"the":[61,64],"bandwidth":[62],"energy":[65,120],"per":[66],"bit.":[67],"Multi-layered":[68],"on-chip":[69],"inductors":[70,83],"are":[71],"designed":[72],"area-effective":[74],"inductive":[75],"peaking.":[76],"A":[77],"5-stage":[78],"INV-TIA":[79],"3":[81],"fabricated":[85],"in":[86],"65-nm":[88],"CMOS.":[89],"By":[90],"using":[91],"multi-layered":[92],"0.02":[94],"mm2":[95],"achieved.":[98],"Measurement":[99],"results":[100],"show":[101],"45":[102],"Gb/s":[103],"operation":[104],"49":[106],"dB\u03a9":[107],"gain":[109],"4.4":[111],"mW":[112],"consumption.":[114],"The":[115],"achieves":[117],"98":[118],"fJ/bit":[119],"efficiency.":[121]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":4},{"year":2022,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}