{"id":"https://openalex.org/W4410846266","doi":"https://doi.org/10.1587/elex.22.20250280","title":"A prediction method for gate degradation of SiC MOSFETs based on on-state resistance variation","display_name":"A prediction method for gate degradation of SiC MOSFETs based on on-state resistance variation","publication_year":2025,"publication_date":"2025-05-29","ids":{"openalex":"https://openalex.org/W4410846266","doi":"https://doi.org/10.1587/elex.22.20250280"},"language":"en","primary_location":{"id":"doi:10.1587/elex.22.20250280","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.22.20250280","pdf_url":"https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_22.20250280/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_22.20250280/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101872041","display_name":"Peng Wang","orcid":"https://orcid.org/0000-0002-4048-6565"},"institutions":[{"id":"https://openalex.org/I184843921","display_name":"Hebei University of Technology","ror":"https://ror.org/018hded08","country_code":"CN","type":"education","lineage":["https://openalex.org/I184843921"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Peng Wang","raw_affiliation_strings":["Dept. of Electrical Engineering, Hebei University of Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electrical Engineering, Hebei University of Technology","institution_ids":["https://openalex.org/I184843921"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101819467","display_name":"Zhigang Zhao","orcid":"https://orcid.org/0000-0002-1760-7939"},"institutions":[{"id":"https://openalex.org/I184843921","display_name":"Hebei University of Technology","ror":"https://ror.org/018hded08","country_code":"CN","type":"education","lineage":["https://openalex.org/I184843921"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhigang Zhao","raw_affiliation_strings":["Dept. of Electrical Engineering, Hebei University of Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electrical Engineering, Hebei University of Technology","institution_ids":["https://openalex.org/I184843921"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I184843921"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0847598,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"22","issue":"14","first_page":"20250280","last_page":"20250280"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.750613808631897},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6194946765899658},{"id":"https://openalex.org/keywords/variation","display_name":"Variation (astronomy)","score":0.584443986415863},{"id":"https://openalex.org/keywords/state","display_name":"State (computer science)","score":0.4508110284805298},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4447442293167114},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4255205988883972},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.39176177978515625},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.374137282371521},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2902408242225647},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.28821349143981934},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18532508611679077},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.13500827550888062},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.13395318388938904},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.08509159088134766},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08108198642730713}],"concepts":[{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.750613808631897},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6194946765899658},{"id":"https://openalex.org/C2778334786","wikidata":"https://www.wikidata.org/wiki/Q1586270","display_name":"Variation (astronomy)","level":2,"score":0.584443986415863},{"id":"https://openalex.org/C48103436","wikidata":"https://www.wikidata.org/wiki/Q599031","display_name":"State (computer science)","level":2,"score":0.4508110284805298},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4447442293167114},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4255205988883972},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.39176177978515625},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.374137282371521},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2902408242225647},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.28821349143981934},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18532508611679077},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.13500827550888062},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.13395318388938904},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08509159088134766},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08108198642730713},{"id":"https://openalex.org/C44870925","wikidata":"https://www.wikidata.org/wiki/Q37547","display_name":"Astrophysics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.22.20250280","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.22.20250280","pdf_url":"https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_22.20250280/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.22.20250280","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.22.20250280","pdf_url":"https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_22.20250280/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4410846266.pdf","grobid_xml":"https://content.openalex.org/works/W4410846266.grobid-xml"},"referenced_works_count":30,"referenced_works":["https://openalex.org/W1053145349","https://openalex.org/W1556550011","https://openalex.org/W2009943423","https://openalex.org/W2066211048","https://openalex.org/W2091201956","https://openalex.org/W2103983803","https://openalex.org/W2150763729","https://openalex.org/W2515348268","https://openalex.org/W2546815467","https://openalex.org/W2786901160","https://openalex.org/W2922304959","https://openalex.org/W2954763539","https://openalex.org/W2967146328","https://openalex.org/W2970228063","https://openalex.org/W3023123314","https://openalex.org/W3042953836","https://openalex.org/W3083994225","https://openalex.org/W3118300733","https://openalex.org/W3194205756","https://openalex.org/W4245755231","https://openalex.org/W4281637854","https://openalex.org/W4285204630","https://openalex.org/W4297031560","https://openalex.org/W4312917665","https://openalex.org/W4364321734","https://openalex.org/W4367280808","https://openalex.org/W4391621120","https://openalex.org/W4396680797","https://openalex.org/W4397026209","https://openalex.org/W4401984194"],"related_works":["https://openalex.org/W2386430105","https://openalex.org/W2356521405","https://openalex.org/W2038534795","https://openalex.org/W2384358604","https://openalex.org/W1567829292","https://openalex.org/W3001063351","https://openalex.org/W3196905815","https://openalex.org/W2351370765","https://openalex.org/W4321379269","https://openalex.org/W1556217118"],"abstract_inverted_index":{"Gate":[0],"oxide":[1],"degradation":[2,23,49,112,117],"plays":[3],"a":[4,16,64],"critical":[5],"role":[6],"in":[7,108],"the":[8,80,94,99,105],"reliability":[9],"of":[10],"SiC":[11,20],"MOSFETs.":[12],"This":[13],"paper":[14],"proposes":[15],"method":[17,89],"for":[18],"predicting":[19,110],"MOSFET":[21],"gate":[22,35,41,48,65,69,111],"based":[24],"on":[25],"on-state":[26],"resistance":[27],"variation":[28],"(\u0394RON).":[29],"\u0394RON,":[30],"which":[31],"is":[32,50,90],"induced":[33],"by":[34],"voltage":[36,70],"changes,":[37],"strongly":[38],"correlates":[39],"with":[40],"degradation.":[42],"The":[43],"relationship":[44],"between":[45],"\u0394RON":[46],"and":[47,55,72,75,78,116],"derived":[51],"through":[52,57],"theoretical":[53],"analysis":[54],"validated":[56],"testing":[58],"at":[59],"different":[60],"temperatures.":[61],"During":[62],"prediction,":[63],"drive":[66],"circuit":[67],"induces":[68],"transients,":[71],"both":[73],"IDS":[74],"VDS":[76],"before":[77],"after":[79],"transients":[81],"are":[82],"measured":[83],"to":[84,92],"calculate":[85],"\u0394RON.":[86],"An":[87],"iterative":[88],"used":[91],"find":[93],"solution":[95],"that":[96],"best":[97],"matches":[98],"calibrated":[100],"relationship.":[101],"Experimental":[102],"results":[103],"demonstrate":[104],"method\u2019s":[106],"effectiveness":[107],"accurately":[109],"across":[113],"various":[114],"temperatures":[115],"levels.":[118]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}