{"id":"https://openalex.org/W4410289038","doi":"https://doi.org/10.1587/elex.22.20250227","title":"C-Ku band high efficiency GaN power amplifier using partial harmonic control","display_name":"C-Ku band high efficiency GaN power amplifier using partial harmonic control","publication_year":2025,"publication_date":"2025-05-12","ids":{"openalex":"https://openalex.org/W4410289038","doi":"https://doi.org/10.1587/elex.22.20250227"},"language":"en","primary_location":{"id":"doi:10.1587/elex.22.20250227","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.22.20250227","pdf_url":"https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_22.20250227/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_22.20250227/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5114216233","display_name":"Ruiying Gao","orcid":null},"institutions":[{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]},{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Ruiying Gao","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences","University of Chinese Academy of Sciences","School of Integrated Circuits, University of Chinese Academy of Sciences"],"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences","institution_ids":["https://openalex.org/I19820366"]},{"raw_affiliation_string":"University of Chinese Academy of Sciences","institution_ids":["https://openalex.org/I4210165038"]},{"raw_affiliation_string":"School of Integrated Circuits, University of Chinese Academy of Sciences","institution_ids":["https://openalex.org/I4210165038"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101972816","display_name":"Jing Wan","orcid":"https://orcid.org/0000-0002-6339-4006"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210136868","display_name":"New Technology (Israel)","ror":"https://ror.org/04k7ny084","country_code":"IL","type":"company","lineage":["https://openalex.org/I4210136868"]}],"countries":["CN","IL"],"is_corresponding":false,"raw_author_name":"Jing Wan","raw_affiliation_strings":["Beijing Key Laboratory of New Generation Communication RF Technology","Institute of Microelectronics, Chinese Academy of Sciences"],"affiliations":[{"raw_affiliation_string":"Beijing Key Laboratory of New Generation Communication RF Technology","institution_ids":["https://openalex.org/I4210136868"]},{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086613360","display_name":"Xuming Sun","orcid":"https://orcid.org/0000-0002-6095-7889"},"institutions":[{"id":"https://openalex.org/I4210136868","display_name":"New Technology (Israel)","ror":"https://ror.org/04k7ny084","country_code":"IL","type":"company","lineage":["https://openalex.org/I4210136868"]},{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]}],"countries":["CN","IL"],"is_corresponding":false,"raw_author_name":"Xuming Sun","raw_affiliation_strings":["Beijing Key Laboratory of New Generation Communication RF Technology","Institute of Microelectronics, Chinese Academy of Sciences"],"affiliations":[{"raw_affiliation_string":"Beijing Key Laboratory of New Generation Communication RF Technology","institution_ids":["https://openalex.org/I4210136868"]},{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100935833","display_name":"Xiaoxin Liang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210136868","display_name":"New Technology (Israel)","ror":"https://ror.org/04k7ny084","country_code":"IL","type":"company","lineage":["https://openalex.org/I4210136868"]},{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]}],"countries":["CN","IL"],"is_corresponding":false,"raw_author_name":"Xiaoxin Liang","raw_affiliation_strings":["Beijing Key Laboratory of New Generation Communication RF Technology","Institute of Microelectronics, Chinese Academy of Sciences"],"affiliations":[{"raw_affiliation_string":"Beijing Key Laboratory of New Generation Communication RF Technology","institution_ids":["https://openalex.org/I4210136868"]},{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences","institution_ids":["https://openalex.org/I19820366"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5114216233"],"corresponding_institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210165038"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":{"value":0.07388216,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"22","issue":"12","first_page":"20250227","last_page":"20250227"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9975000023841858,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9975000023841858,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9779000282287598,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9735999703407288,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.6621351838111877},{"id":"https://openalex.org/keywords/ku-band","display_name":"Ku band","score":0.6154905557632446},{"id":"https://openalex.org/keywords/power-added-efficiency","display_name":"Power-added efficiency","score":0.5283908247947693},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.47832512855529785},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.469685822725296},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4325064420700073},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.4302392303943634},{"id":"https://openalex.org/keywords/power-control","display_name":"Power control","score":0.4285605847835541},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.394363135099411},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.33657506108283997},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.30440807342529297},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16057327389717102},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.05569702386856079}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.6621351838111877},{"id":"https://openalex.org/C2779383134","wikidata":"https://www.wikidata.org/wiki/Q306639","display_name":"Ku band","level":2,"score":0.6154905557632446},{"id":"https://openalex.org/C129231560","wikidata":"https://www.wikidata.org/wiki/Q7236462","display_name":"Power-added efficiency","level":5,"score":0.5283908247947693},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.47832512855529785},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.469685822725296},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4325064420700073},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.4302392303943634},{"id":"https://openalex.org/C56685638","wikidata":"https://www.wikidata.org/wiki/Q2300474","display_name":"Power control","level":3,"score":0.4285605847835541},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.394363135099411},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.33657506108283997},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.30440807342529297},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16057327389717102},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.05569702386856079},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.22.20250227","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.22.20250227","pdf_url":"https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_22.20250227/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.22.20250227","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.22.20250227","pdf_url":"https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_22.20250227/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8999999761581421,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4410289038.pdf","grobid_xml":"https://content.openalex.org/works/W4410289038.grobid-xml"},"referenced_works_count":32,"referenced_works":["https://openalex.org/W1518006379","https://openalex.org/W1535815844","https://openalex.org/W2125398613","https://openalex.org/W2565837244","https://openalex.org/W2567498297","https://openalex.org/W2761856292","https://openalex.org/W2803345995","https://openalex.org/W2887344186","https://openalex.org/W2897409719","https://openalex.org/W2904179644","https://openalex.org/W2953175513","https://openalex.org/W2958109855","https://openalex.org/W2962011101","https://openalex.org/W3012522328","https://openalex.org/W3021644385","https://openalex.org/W3024988100","https://openalex.org/W3032148865","https://openalex.org/W3048253515","https://openalex.org/W3095443833","https://openalex.org/W3128034037","https://openalex.org/W3136644596","https://openalex.org/W3137401697","https://openalex.org/W3195196764","https://openalex.org/W4285136845","https://openalex.org/W4312590220","https://openalex.org/W4321608915","https://openalex.org/W4322577954","https://openalex.org/W4382657731","https://openalex.org/W4384159650","https://openalex.org/W4396712905","https://openalex.org/W4399283711","https://openalex.org/W4399404069"],"related_works":["https://openalex.org/W2566248564","https://openalex.org/W1989581869","https://openalex.org/W2162818563","https://openalex.org/W2191969814","https://openalex.org/W1638655194","https://openalex.org/W2163964946","https://openalex.org/W2102454024","https://openalex.org/W2004588295","https://openalex.org/W2057291195","https://openalex.org/W2508354096"],"abstract_inverted_index":{"This":[0],"letter":[1],"presents":[2],"a":[3,97,120,127,133],"C-Ku-band":[4],"high-efficiency":[5,105],"power":[6,113],"amplifier":[7],"(PA)":[8],"fabricated":[9],"using":[10],"0.25\u00b5m":[11],"gallium":[12],"nitride":[13],"(GaN)":[14],"high":[15,91],"electron":[16],"mobility":[17],"transistor":[18,63,88],"(HEMT)":[19],"technology.":[20],"A":[21],"novel":[22],"bias":[23],"network":[24],"criterion,":[25],"which":[26],"quantifies":[27],"the":[28,36,55,65,78,83,87],"bandwidth-efficiency":[29],"tradeoff":[30],"and":[31,58,72,126],"is":[32,39,51,89],"used":[33],"to":[34,53],"improve":[35],"high-band":[37],"efficiency,":[38],"thoroughly":[40],"discussed.":[41],"The":[42,101,139],"partial":[43],"harmonic":[44,74],"control":[45],"amplification":[46],"cell":[47],"(PHCAC)":[48],"design":[49],"method":[50],"applied":[52],"obtain":[54],"optimum":[56],"source":[57],"load":[59],"impedances":[60],"for":[61],"each":[62],"in":[64,96],"PA\u2019s":[66],"output":[67,112],"stage":[68],"at":[69,92],"both":[70],"fundamental":[71],"second":[73],"frequencies,":[75,94],"thereby":[76],"enhancing":[77],"mid-band":[79],"efficiency.":[80,100],"In":[81],"addition,":[82],"intrinsic":[84],"PAE":[85],"of":[86,114,124,129,136,147],"sufficiently":[90],"low":[93],"resulting":[95],"higher":[98],"overall":[99],"proposed":[102,140],"7-13":[103],"GHz":[104],"GaN":[106,141],"PA":[107,142],"MMIC":[108,143],"delivers":[109],"an":[110,145],"average":[111],"42.1-43.3":[115],"dBm":[116],"(16.2-21.3":[117],"W)":[118],"with":[119],"power-added":[121],"efficiency":[122],"(PAE)":[123],"38%-43%":[125],"gain":[128],"30.7-32.9":[130],"dB":[131],"under":[132],"drain":[134],"voltage":[135],"28":[137],"V.":[138],"occupies":[144],"area":[146],"13.1mm2":[148]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}