{"id":"https://openalex.org/W4406120378","doi":"https://doi.org/10.1587/elex.22.20240702","title":"A pulse-current junction calibration method for power SiC MOSFET","display_name":"A pulse-current junction calibration method for power SiC MOSFET","publication_year":2025,"publication_date":"2025-01-07","ids":{"openalex":"https://openalex.org/W4406120378","doi":"https://doi.org/10.1587/elex.22.20240702"},"language":"en","primary_location":{"id":"doi:10.1587/elex.22.20240702","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.22.20240702","pdf_url":"https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_22.20240702/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_22.20240702/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100656830","display_name":"Tianyang Wang","orcid":"https://orcid.org/0000-0002-7256-883X"},"institutions":[{"id":"https://openalex.org/I204983213","display_name":"Harbin Institute of Technology","ror":"https://ror.org/01yqg2h08","country_code":"CN","type":"education","lineage":["https://openalex.org/I204983213"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Tianyang Wang","raw_affiliation_strings":["Automotive Engineering College, Harbin Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Automotive Engineering College, Harbin Institute of Technology","institution_ids":["https://openalex.org/I204983213"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100350147","display_name":"Qi Li","orcid":"https://orcid.org/0000-0001-6931-3206"},"institutions":[{"id":"https://openalex.org/I204983213","display_name":"Harbin Institute of Technology","ror":"https://ror.org/01yqg2h08","country_code":"CN","type":"education","lineage":["https://openalex.org/I204983213"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qi Li","raw_affiliation_strings":["Automotive Engineering College, Harbin Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Automotive Engineering College, Harbin Institute of Technology","institution_ids":["https://openalex.org/I204983213"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089438704","display_name":"Dafang Wang","orcid":"https://orcid.org/0000-0002-4699-8764"},"institutions":[{"id":"https://openalex.org/I204983213","display_name":"Harbin Institute of Technology","ror":"https://ror.org/01yqg2h08","country_code":"CN","type":"education","lineage":["https://openalex.org/I204983213"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dafang Wang","raw_affiliation_strings":["Automotive Engineering College, Harbin Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Automotive Engineering College, Harbin Institute of Technology","institution_ids":["https://openalex.org/I204983213"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Guohao Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I204983213","display_name":"Harbin Institute of Technology","ror":"https://ror.org/01yqg2h08","country_code":"CN","type":"education","lineage":["https://openalex.org/I204983213"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Guohao Yang","raw_affiliation_strings":["Automotive Engineering College, Harbin Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Automotive Engineering College, Harbin Institute of Technology","institution_ids":["https://openalex.org/I204983213"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5007013151","display_name":"Jing Guo","orcid":"https://orcid.org/0000-0002-2595-7314"},"institutions":[{"id":"https://openalex.org/I204983213","display_name":"Harbin Institute of Technology","ror":"https://ror.org/01yqg2h08","country_code":"CN","type":"education","lineage":["https://openalex.org/I204983213"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"JinKe Guo","raw_affiliation_strings":["Automotive Engineering College, Harbin Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Automotive Engineering College, Harbin Institute of Technology","institution_ids":["https://openalex.org/I204983213"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5100656830"],"corresponding_institution_ids":["https://openalex.org/I204983213"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":{"value":0.00166457,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"22","issue":"3","first_page":"20240702","last_page":"20240702"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9977999925613403,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9972000122070312,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/calibration","display_name":"Calibration","score":0.8163080215454102},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6278328895568848},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5937776565551758},{"id":"https://openalex.org/keywords/inductance","display_name":"Inductance","score":0.5384039878845215},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5307490825653076},{"id":"https://openalex.org/keywords/diffusion-capacitance","display_name":"Diffusion capacitance","score":0.5267766714096069},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5193849205970764},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5092803239822388},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.48410069942474365},{"id":"https://openalex.org/keywords/junction-temperature","display_name":"Junction temperature","score":0.4614613652229309},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.35684293508529663},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.321351021528244},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3136172294616699},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1744706928730011},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16178220510482788},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.15654560923576355},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.06947541236877441}],"concepts":[{"id":"https://openalex.org/C165838908","wikidata":"https://www.wikidata.org/wiki/Q736777","display_name":"Calibration","level":2,"score":0.8163080215454102},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6278328895568848},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5937776565551758},{"id":"https://openalex.org/C29210110","wikidata":"https://www.wikidata.org/wiki/Q177897","display_name":"Inductance","level":3,"score":0.5384039878845215},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5307490825653076},{"id":"https://openalex.org/C67337642","wikidata":"https://www.wikidata.org/wiki/Q5275437","display_name":"Diffusion capacitance","level":4,"score":0.5267766714096069},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5193849205970764},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5092803239822388},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.48410069942474365},{"id":"https://openalex.org/C167781694","wikidata":"https://www.wikidata.org/wiki/Q6311800","display_name":"Junction temperature","level":3,"score":0.4614613652229309},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.35684293508529663},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.321351021528244},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3136172294616699},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1744706928730011},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16178220510482788},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15654560923576355},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.06947541236877441},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.22.20240702","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.22.20240702","pdf_url":"https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_22.20240702/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.22.20240702","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.22.20240702","pdf_url":"https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_22.20240702/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.8600000143051147,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G948295268","display_name":null,"funder_award_id":"52072098","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320335581","display_name":"Young Scientists Fund","ror":null}],"has_content":{"grobid_xml":false,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4406120378.pdf"},"referenced_works_count":29,"referenced_works":["https://openalex.org/W2026012753","https://openalex.org/W2071760299","https://openalex.org/W2162398720","https://openalex.org/W2294475654","https://openalex.org/W2302561359","https://openalex.org/W2321644402","https://openalex.org/W2556002624","https://openalex.org/W2740294444","https://openalex.org/W2742407185","https://openalex.org/W2747182495","https://openalex.org/W2763184538","https://openalex.org/W2787675360","https://openalex.org/W2795631262","https://openalex.org/W2901408149","https://openalex.org/W2969215200","https://openalex.org/W2972893993","https://openalex.org/W2983240990","https://openalex.org/W2992873428","https://openalex.org/W3083994225","https://openalex.org/W3112836024","https://openalex.org/W3152982305","https://openalex.org/W4294811410","https://openalex.org/W4295832262","https://openalex.org/W4308962753","https://openalex.org/W4309226266","https://openalex.org/W4378843618","https://openalex.org/W4385256913","https://openalex.org/W4387885915","https://openalex.org/W4391020436"],"related_works":["https://openalex.org/W2109314689","https://openalex.org/W1911543349","https://openalex.org/W1979448382","https://openalex.org/W2028294037","https://openalex.org/W2287154167","https://openalex.org/W2061854865","https://openalex.org/W2781651239","https://openalex.org/W1963536502","https://openalex.org/W2054296706","https://openalex.org/W2050412924"],"abstract_inverted_index":{"Junction":[0],"temperature":[1,30,46],"calibration":[2,18,41,47,62,88,103,139],"of":[3,25,29,36,72,82,111,120,125,137],"power":[4],"devices":[5],"is":[6,20,49,57,77,89,118],"important":[7],"for":[8],"estimating":[9],"the":[10,27,33,44,60,70,80,83,87,96,101,109,112,116,135,138],"junction":[11,45],"temperature.":[12],"In":[13],"this":[14],"paper,":[15],"a":[16,23,40,52,122,128],"pulse-current":[17],"method":[19,104,117],"proposed":[21,102,113],"as":[22,39],"means":[24],"improving":[26],"efficiency":[28,136],"calibration,":[31],"utilizing":[32],"on-state":[34],"voltage":[35],"SiC":[37,84],"MOSFET":[38,85],"parameter.":[42],"Firstly,":[43],"platform":[48],"constructed":[50],"and":[51,64,69,75],"suitable":[53],"parameter":[54],"acquisition":[55],"system":[56],"implemented.":[58],"Subsequently,":[59],"corresponding":[61],"strategy":[63],"experimental":[65,130],"flow":[66],"are":[67,105],"proposed,":[68],"calculation":[71],"bus":[73],"capacitance":[74],"inductance":[76],"given.":[78],"Ultimately,":[79],"self-heating":[81,97],"during":[86],"evaluated":[90],"quantificationally.":[91],"The":[92],"results":[93],"demonstrate":[94],"that":[95],"effects":[98],"associated":[99],"with":[100],"negligible,":[106],"thereby":[107],"confirming":[108],"feasibility":[110],"strategy.":[114],"Furthermore,":[115],"capable":[119],"acquiring":[121],"substantial":[123],"amount":[124],"data":[126],"in":[127],"single":[129],"test,":[131],"which":[132],"markedly":[133],"enhances":[134],"process.":[140]},"counts_by_year":[],"updated_date":"2026-04-21T08:09:41.155169","created_date":"2025-10-10T00:00:00"}