{"id":"https://openalex.org/W4386038634","doi":"https://doi.org/10.1587/elex.20.20230328","title":"A high-linearity SP5T SOI switch with a resistive biasing network and capacitance & resistor compensation technology","display_name":"A high-linearity SP5T SOI switch with a resistive biasing network and capacitance & resistor compensation technology","publication_year":2023,"publication_date":"2023-08-21","ids":{"openalex":"https://openalex.org/W4386038634","doi":"https://doi.org/10.1587/elex.20.20230328"},"language":"en","primary_location":{"id":"doi:10.1587/elex.20.20230328","is_oa":true,"landing_page_url":"http://dx.doi.org/10.1587/elex.20.20230328","pdf_url":"https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_20.20230328/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_20.20230328/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5091867169","display_name":"Ruiyang Zhang","orcid":"https://orcid.org/0000-0002-2207-6060"},"institutions":[{"id":"https://openalex.org/I162868743","display_name":"Tianjin University","ror":"https://ror.org/012tb2g32","country_code":"CN","type":"education","lineage":["https://openalex.org/I162868743"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ruiyang Zhang","raw_affiliation_strings":["School of Microelectronics, Tianjin University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Tianjin University","institution_ids":["https://openalex.org/I162868743"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110962836","display_name":"Kaixue Ma","orcid":null},"institutions":[{"id":"https://openalex.org/I162868743","display_name":"Tianjin University","ror":"https://ror.org/012tb2g32","country_code":"CN","type":"education","lineage":["https://openalex.org/I162868743"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kaixue Ma","raw_affiliation_strings":["School of Microelectronics, Tianjin University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Tianjin University","institution_ids":["https://openalex.org/I162868743"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087906386","display_name":"Haipeng Fu","orcid":"https://orcid.org/0000-0002-9809-1830"},"institutions":[{"id":"https://openalex.org/I162868743","display_name":"Tianjin University","ror":"https://ror.org/012tb2g32","country_code":"CN","type":"education","lineage":["https://openalex.org/I162868743"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Haipeng Fu","raw_affiliation_strings":["School of Microelectronics, Tianjin University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Tianjin University","institution_ids":["https://openalex.org/I162868743"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5086194516","display_name":"Puhuan Huang","orcid":null},"institutions":[{"id":"https://openalex.org/I162868743","display_name":"Tianjin University","ror":"https://ror.org/012tb2g32","country_code":"CN","type":"education","lineage":["https://openalex.org/I162868743"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Puhuan Huang","raw_affiliation_strings":["School of Microelectronics, Tianjin University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Tianjin University","institution_ids":["https://openalex.org/I162868743"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I162868743"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0835554,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"21","issue":"3","first_page":"20230328","last_page":"20230328"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.6943672299385071},{"id":"https://openalex.org/keywords/linearity","display_name":"Linearity","score":0.6420329809188843},{"id":"https://openalex.org/keywords/biasing","display_name":"Biasing","score":0.6360644102096558},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.6189925670623779},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.5873889327049255},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5613411664962769},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5326131582260132},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5213219523429871},{"id":"https://openalex.org/keywords/dbc","display_name":"dBc","score":0.5191680192947388},{"id":"https://openalex.org/keywords/frequency-compensation","display_name":"Frequency compensation","score":0.4255812168121338},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4014130234718323},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3821932375431061},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.33946120738983154},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.27979373931884766},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.20627471804618835},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.19610536098480225},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.13579344749450684},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.10631012916564941}],"concepts":[{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.6943672299385071},{"id":"https://openalex.org/C77170095","wikidata":"https://www.wikidata.org/wiki/Q1753188","display_name":"Linearity","level":2,"score":0.6420329809188843},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.6360644102096558},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6189925670623779},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.5873889327049255},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5613411664962769},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5326131582260132},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5213219523429871},{"id":"https://openalex.org/C193523891","wikidata":"https://www.wikidata.org/wiki/Q1771950","display_name":"dBc","level":3,"score":0.5191680192947388},{"id":"https://openalex.org/C131782439","wikidata":"https://www.wikidata.org/wiki/Q1455581","display_name":"Frequency compensation","level":4,"score":0.4255812168121338},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4014130234718323},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3821932375431061},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.33946120738983154},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.27979373931884766},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.20627471804618835},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.19610536098480225},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.13579344749450684},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.10631012916564941},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.20.20230328","is_oa":true,"landing_page_url":"http://dx.doi.org/10.1587/elex.20.20230328","pdf_url":"https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_20.20230328/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.20.20230328","is_oa":true,"landing_page_url":"http://dx.doi.org/10.1587/elex.20.20230328","pdf_url":"https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_20.20230328/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8299999833106995,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4386038634.pdf","grobid_xml":"https://content.openalex.org/works/W4386038634.grobid-xml"},"referenced_works_count":37,"referenced_works":["https://openalex.org/W1573243942","https://openalex.org/W1601087262","https://openalex.org/W1606875661","https://openalex.org/W1623170747","https://openalex.org/W1972861713","https://openalex.org/W1978240691","https://openalex.org/W2001681296","https://openalex.org/W2021808670","https://openalex.org/W2043222520","https://openalex.org/W2063980579","https://openalex.org/W2066527301","https://openalex.org/W2070863845","https://openalex.org/W2079062986","https://openalex.org/W2090208688","https://openalex.org/W2104363541","https://openalex.org/W2111095377","https://openalex.org/W2112273978","https://openalex.org/W2137795881","https://openalex.org/W2160357162","https://openalex.org/W2164711381","https://openalex.org/W2167147244","https://openalex.org/W2168301369","https://openalex.org/W2170237053","https://openalex.org/W2289772222","https://openalex.org/W2351917964","https://openalex.org/W2612303915","https://openalex.org/W2735225265","https://openalex.org/W2761556591","https://openalex.org/W2771152181","https://openalex.org/W2793775184","https://openalex.org/W2962920357","https://openalex.org/W2970541287","https://openalex.org/W3011820875","https://openalex.org/W3118720658","https://openalex.org/W3128592643","https://openalex.org/W3128814779","https://openalex.org/W4225880156"],"related_works":["https://openalex.org/W2535139050","https://openalex.org/W2074931360","https://openalex.org/W2544401233","https://openalex.org/W1521836971","https://openalex.org/W1976657235","https://openalex.org/W2585697189","https://openalex.org/W2038238943","https://openalex.org/W2744440794","https://openalex.org/W2058316323","https://openalex.org/W4386038634"],"abstract_inverted_index":{"This":[0],"letter":[1],"presents":[2],"a":[3,10,39,83,95],"high-linearity":[4],"single-pole":[5],"five-throw":[6],"switch":[7,64,81],"implemented":[8],"in":[9],"0.13-\u00b5m":[11],"silicon-on-insulator":[12],"(SOI)":[13],"CMOS":[14],"process.":[15],"In":[16],"order":[17],"to":[18],"improve":[19],"the":[20,24,29,34,62],"linearity":[21],"of":[22,48,61,86,92],"switch,":[23],"uniform":[25],"voltage":[26],"division":[27],"across":[28],"stacked-FETs":[30],"is":[31,65],"obtained":[32],"by":[33],"proposed":[35,63],"structure,":[36],"which":[37],"employs":[38],"resistive":[40],"biasing":[41],"network":[42],"as":[43,45],"well":[44],"compensation":[46],"technology":[47],"drain-to-source":[49],"capacitance":[50],"and":[51,71,75,88],"DC":[52],"balance":[53],"resistor.":[54],"The":[55,80],"measured":[56],"input":[57,97],"0.1dB":[58],"compression":[59],"point":[60],"42dBm.":[66],"Insertion":[67],"losses":[68],"are":[69],"0.38dB":[70],"0.5dB":[72],"for":[73],"TX":[74],"RX":[76],"modes":[77],"at":[78,99],"0.9GHz.":[79,100],"exhibits":[82],"second":[84],"harmonic":[85,90],"-91dBc,":[87],"third":[89],"power":[91,98],"-84dBc":[93],"with":[94],"+28dBm":[96]},"counts_by_year":[],"updated_date":"2025-12-22T23:10:17.713674","created_date":"2025-10-10T00:00:00"}