{"id":"https://openalex.org/W4293430962","doi":"https://doi.org/10.1587/elex.19.20220247","title":"Research on characteristics of RC-IGBT with low switching energy consumption","display_name":"Research on characteristics of RC-IGBT with low switching energy consumption","publication_year":2022,"publication_date":"2022-08-22","ids":{"openalex":"https://openalex.org/W4293430962","doi":"https://doi.org/10.1587/elex.19.20220247"},"language":"en","primary_location":{"id":"doi:10.1587/elex.19.20220247","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.19.20220247","pdf_url":"https://www.jstage.jst.go.jp/article/elex/19/18/19_19.20220247/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/19/18/19_19.20220247/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5074075841","display_name":"Li Ma","orcid":"https://orcid.org/0000-0001-7407-1846"},"institutions":[{"id":"https://openalex.org/I4210131919","display_name":"Xi'an University of Technology","ror":"https://ror.org/038avdt50","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210131919"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Li Ma","raw_affiliation_strings":["School of Science, Xi\u2019an University of Technology","School of Science, Xi'an University of Technology"],"affiliations":[{"raw_affiliation_string":"School of Science, Xi\u2019an University of Technology","institution_ids":["https://openalex.org/I4210131919"]},{"raw_affiliation_string":"School of Science, Xi'an University of Technology","institution_ids":["https://openalex.org/I4210131919"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034380506","display_name":"Jia Qiang Xie","orcid":null},"institutions":[{"id":"https://openalex.org/I4210131919","display_name":"Xi'an University of Technology","ror":"https://ror.org/038avdt50","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210131919"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jia Qiang Xie","raw_affiliation_strings":["School of Automation and Information Engineering, Xi\u2019an University of Technology","School of Automation and Information Engineering, Xi'an University of Technology"],"affiliations":[{"raw_affiliation_string":"School of Automation and Information Engineering, Xi\u2019an University of Technology","institution_ids":["https://openalex.org/I4210131919"]},{"raw_affiliation_string":"School of Automation and Information Engineering, Xi'an University of Technology","institution_ids":["https://openalex.org/I4210131919"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058756932","display_name":"Ru Liang Zhang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210131919","display_name":"Xi'an University of Technology","ror":"https://ror.org/038avdt50","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210131919"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ru Liang Zhang","raw_affiliation_strings":["School of Automation and Information Engineering, Xi\u2019an University of Technology","School of Automation and Information Engineering, Xi'an University of Technology"],"affiliations":[{"raw_affiliation_string":"School of Automation and Information Engineering, Xi\u2019an University of Technology","institution_ids":["https://openalex.org/I4210131919"]},{"raw_affiliation_string":"School of Automation and Information Engineering, Xi'an University of Technology","institution_ids":["https://openalex.org/I4210131919"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113557717","display_name":"Guo Wei Zhao","orcid":null},"institutions":[{"id":"https://openalex.org/I4210131919","display_name":"Xi'an University of Technology","ror":"https://ror.org/038avdt50","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210131919"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Guo Wei Zhao","raw_affiliation_strings":["School of Science, Xi\u2019an University of Technology","School of Science, Xi'an University of Technology"],"affiliations":[{"raw_affiliation_string":"School of Science, Xi\u2019an University of Technology","institution_ids":["https://openalex.org/I4210131919"]},{"raw_affiliation_string":"School of Science, Xi'an University of Technology","institution_ids":["https://openalex.org/I4210131919"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031305279","display_name":"Tian Yang Gao","orcid":null},"institutions":[{"id":"https://openalex.org/I4210131919","display_name":"Xi'an University of Technology","ror":"https://ror.org/038avdt50","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210131919"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Tian Yang Gao","raw_affiliation_strings":["School of Science, Xi\u2019an University of Technology","School of Science, Xi'an University of Technology"],"affiliations":[{"raw_affiliation_string":"School of Science, Xi\u2019an University of Technology","institution_ids":["https://openalex.org/I4210131919"]},{"raw_affiliation_string":"School of Science, Xi'an University of Technology","institution_ids":["https://openalex.org/I4210131919"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5029174306","display_name":"Ning Yu","orcid":"https://orcid.org/0000-0001-6084-3630"},"institutions":[{"id":"https://openalex.org/I4210131919","display_name":"Xi'an University of Technology","ror":"https://ror.org/038avdt50","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210131919"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ning Mei Yu","raw_affiliation_strings":["School of Automation and Information Engineering, Xi\u2019an University of Technology","School of Automation and Information Engineering, Xi'an University of Technology"],"affiliations":[{"raw_affiliation_string":"School of Automation and Information Engineering, Xi\u2019an University of Technology","institution_ids":["https://openalex.org/I4210131919"]},{"raw_affiliation_string":"School of Automation and Information Engineering, Xi'an University of Technology","institution_ids":["https://openalex.org/I4210131919"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5074075841"],"corresponding_institution_ids":["https://openalex.org/I4210131919"],"apc_list":null,"apc_paid":null,"fwci":0.6404,"has_fulltext":true,"cited_by_count":7,"citation_normalized_percentile":{"value":0.66320904,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"19","issue":"18","first_page":"20220247","last_page":"20220247"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/insulated-gate-bipolar-transistor","display_name":"Insulated-gate bipolar transistor","score":0.8935178518295288},{"id":"https://openalex.org/keywords/common-emitter","display_name":"Common emitter","score":0.6210508346557617},{"id":"https://openalex.org/keywords/snapback","display_name":"Snapback","score":0.6047176718711853},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6036950349807739},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.600483775138855},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5791305303573608},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5187347531318665},{"id":"https://openalex.org/keywords/trench","display_name":"Trench","score":0.47363582253456116},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4604303240776062},{"id":"https://openalex.org/keywords/flyback-diode","display_name":"Flyback diode","score":0.43372029066085815},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3722854554653168},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.30799204111099243},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.09770408272743225}],"concepts":[{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.8935178518295288},{"id":"https://openalex.org/C46918542","wikidata":"https://www.wikidata.org/wiki/Q1648344","display_name":"Common emitter","level":2,"score":0.6210508346557617},{"id":"https://openalex.org/C2779888857","wikidata":"https://www.wikidata.org/wiki/Q18378810","display_name":"Snapback","level":4,"score":0.6047176718711853},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6036950349807739},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.600483775138855},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5791305303573608},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5187347531318665},{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.47363582253456116},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4604303240776062},{"id":"https://openalex.org/C166869088","wikidata":"https://www.wikidata.org/wiki/Q888791","display_name":"Flyback diode","level":5,"score":0.43372029066085815},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3722854554653168},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.30799204111099243},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.09770408272743225},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C66322947","wikidata":"https://www.wikidata.org/wiki/Q11658","display_name":"Transformer","level":3,"score":0.0},{"id":"https://openalex.org/C17321440","wikidata":"https://www.wikidata.org/wiki/Q184909","display_name":"Flyback transformer","level":4,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.19.20220247","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.19.20220247","pdf_url":"https://www.jstage.jst.go.jp/article/elex/19/18/19_19.20220247/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.19.20220247","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.19.20220247","pdf_url":"https://www.jstage.jst.go.jp/article/elex/19/18/19_19.20220247/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.8999999761581421,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4293430962.pdf","grobid_xml":"https://content.openalex.org/works/W4293430962.grobid-xml"},"referenced_works_count":28,"referenced_works":["https://openalex.org/W1599108317","https://openalex.org/W1859306658","https://openalex.org/W1937749691","https://openalex.org/W1984727573","https://openalex.org/W1998651949","https://openalex.org/W2012171854","https://openalex.org/W2018306531","https://openalex.org/W2050797359","https://openalex.org/W2056873750","https://openalex.org/W2059093623","https://openalex.org/W2081964010","https://openalex.org/W2090212372","https://openalex.org/W2135962127","https://openalex.org/W2275741432","https://openalex.org/W2481974805","https://openalex.org/W2498970398","https://openalex.org/W2586462328","https://openalex.org/W2737896645","https://openalex.org/W2755083439","https://openalex.org/W2787710197","https://openalex.org/W2796020746","https://openalex.org/W2810447963","https://openalex.org/W2886013257","https://openalex.org/W2900986686","https://openalex.org/W2901141918","https://openalex.org/W2922090694","https://openalex.org/W2971535304","https://openalex.org/W2989707304"],"related_works":["https://openalex.org/W2899084033","https://openalex.org/W2329707383","https://openalex.org/W2264583795","https://openalex.org/W2137917476","https://openalex.org/W3095325456","https://openalex.org/W3171979268","https://openalex.org/W4366421340","https://openalex.org/W3213144565","https://openalex.org/W2043128969","https://openalex.org/W2146714001"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3],"1200V-class":[4],"reverse":[5],"conducting":[6],"insulated":[7],"gate":[8,78],"bipolar":[9],"transistor":[10],"(RC-IGBT)":[11],"with":[12,24,149],"low":[13],"switching":[14,137],"energy":[15,138],"consumption":[16,139],"(LE-RC-IGBT).":[17],"Its":[18],"structure":[19],"was":[20,82,118],"designed":[21],"in":[22,54],"accordance":[23],"the":[25,42,47,55,58,61,71,77,85,89,93,97,101,105,108,115,125,136,141,150],"latest":[26],"enhanced":[27],"trench":[28,73,81],"and":[29,63,100],"field":[30],"stop":[31],"technology":[32,52],"while":[33],"incorporating":[34],"an":[35],"anti-parallel":[36],"Free":[37],"Wheeling":[38],"Diode":[39,50],"(FWD)":[40],"between":[41,96],"adjacent":[43],"FS-IGBT":[44,64],"cells.":[45],"With":[46],"Emitter":[48],"Shorted":[49],"(ESD)":[51],"employed":[53],"design":[56],"of":[57,76,88,107,114,124,140],"FWD":[59,62],"structure,":[60],"can":[65],"be":[66],"made":[67],"simultaneously.":[68],"By":[69],"using":[70,130],"same":[72],"etching":[74],"technique":[75],"process,":[79],"oxide":[80],"formed":[83],"on":[84,104],"back":[86,106],"side":[87],"device":[90],"to":[91],"increase":[92],"short-circuit":[94],"resistance":[95],"N+":[98],"Collector":[99,103],"P+":[102],"RC-IGBT.":[109],"The":[110,121],"voltage":[111],"snapback":[112],"phenomenon":[113],"conventional":[116,151],"RC-IGBT":[117,126],"completely":[119],"eliminated.":[120],"electrical":[122],"characteristics":[123],"were":[127],"investigated":[128],"by":[129,146],"Sentaurus-TCAD.":[131],"Simulation":[132],"results":[133],"show":[134],"that":[135],"proposed":[142],"LE-RC-IGBT":[143],"is":[144],"reduced":[145],"approximately":[147],"50%compared":[148],"one.":[152]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}
