{"id":"https://openalex.org/W4225871739","doi":"https://doi.org/10.1587/elex.19.20220144","title":"A high-speed low side GaN e-HEMT driver with gate ringing and overshoot suppression","display_name":"A high-speed low side GaN e-HEMT driver with gate ringing and overshoot suppression","publication_year":2022,"publication_date":"2022-04-24","ids":{"openalex":"https://openalex.org/W4225871739","doi":"https://doi.org/10.1587/elex.19.20220144"},"language":"en","primary_location":{"id":"doi:10.1587/elex.19.20220144","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.19.20220144","pdf_url":"https://www.jstage.jst.go.jp/article/elex/19/10/19_19.20220144/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/19/10/19_19.20220144/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5041131049","display_name":"Jian Jin","orcid":"https://orcid.org/0000-0001-8586-0429"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4391767673","display_name":"State Key Laboratory of ASIC and System","ror":"https://ror.org/01mamgv83","country_code":null,"type":"facility","lineage":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Jian Jin","raw_affiliation_strings":["State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University"],"affiliations":[{"raw_affiliation_string":"State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University","institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103275719","display_name":"Mengyuan Sun","orcid":"https://orcid.org/0000-0002-5234-1208"},"institutions":[{"id":"https://openalex.org/I4391767673","display_name":"State Key Laboratory of ASIC and System","ror":"https://ror.org/01mamgv83","country_code":null,"type":"facility","lineage":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]},{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Mengyuan Sun","raw_affiliation_strings":["State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University"],"affiliations":[{"raw_affiliation_string":"State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University","institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079888988","display_name":"Yannan Yang","orcid":"https://orcid.org/0000-0002-7374-8138"},"institutions":[{"id":"https://openalex.org/I4391767673","display_name":"State Key Laboratory of ASIC and System","ror":"https://ror.org/01mamgv83","country_code":null,"type":"facility","lineage":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]},{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yannan Yang","raw_affiliation_strings":["State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University"],"affiliations":[{"raw_affiliation_string":"State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University","institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072016784","display_name":"Min Xu","orcid":"https://orcid.org/0000-0002-1313-568X"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4391767673","display_name":"State Key Laboratory of ASIC and System","ror":"https://ror.org/01mamgv83","country_code":null,"type":"facility","lineage":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Min Xu","raw_affiliation_strings":["State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University"],"affiliations":[{"raw_affiliation_string":"State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University","institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111519882","display_name":"David Wei Zhang","orcid":null},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4391767673","display_name":"State Key Laboratory of ASIC and System","ror":"https://ror.org/01mamgv83","country_code":null,"type":"facility","lineage":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"David Wei Zhang","raw_affiliation_strings":["State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University"],"affiliations":[{"raw_affiliation_string":"State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University","institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5041131049"],"corresponding_institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4391767673"],"apc_list":null,"apc_paid":null,"fwci":0.183,"has_fulltext":true,"cited_by_count":2,"citation_normalized_percentile":{"value":0.45732479,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":95},"biblio":{"volume":"19","issue":"10","first_page":"20220144","last_page":"20220144"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.8885107040405273},{"id":"https://openalex.org/keywords/ringing","display_name":"Ringing","score":0.8849979639053345},{"id":"https://openalex.org/keywords/overshoot","display_name":"Overshoot (microwave communication)","score":0.73565274477005},{"id":"https://openalex.org/keywords/gate-driver","display_name":"Gate driver","score":0.5122222304344177},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5062288641929626},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.44955477118492126},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.43745195865631104},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4049612283706665},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.40106087923049927},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.39468592405319214},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.36442893743515015},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3340409994125366},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2733638882637024},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11367225646972656}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.8885107040405273},{"id":"https://openalex.org/C30684385","wikidata":"https://www.wikidata.org/wiki/Q176509","display_name":"Ringing","level":3,"score":0.8849979639053345},{"id":"https://openalex.org/C2780323453","wikidata":"https://www.wikidata.org/wiki/Q7113957","display_name":"Overshoot (microwave communication)","level":2,"score":0.73565274477005},{"id":"https://openalex.org/C179141203","wikidata":"https://www.wikidata.org/wiki/Q1495747","display_name":"Gate driver","level":3,"score":0.5122222304344177},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5062288641929626},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44955477118492126},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.43745195865631104},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4049612283706665},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.40106087923049927},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.39468592405319214},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.36442893743515015},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3340409994125366},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2733638882637024},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11367225646972656},{"id":"https://openalex.org/C106131492","wikidata":"https://www.wikidata.org/wiki/Q3072260","display_name":"Filter (signal processing)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.19.20220144","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.19.20220144","pdf_url":"https://www.jstage.jst.go.jp/article/elex/19/10/19_19.20220144/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.19.20220144","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.19.20220144","pdf_url":"https://www.jstage.jst.go.jp/article/elex/19/10/19_19.20220144/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.6899999976158142}],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4225871739.pdf","grobid_xml":"https://content.openalex.org/works/W4225871739.grobid-xml"},"referenced_works_count":25,"referenced_works":["https://openalex.org/W603915860","https://openalex.org/W1535303665","https://openalex.org/W1582527544","https://openalex.org/W1938622137","https://openalex.org/W1984078715","https://openalex.org/W2029699094","https://openalex.org/W2030889140","https://openalex.org/W2171886847","https://openalex.org/W2216425415","https://openalex.org/W2304792220","https://openalex.org/W2318916889","https://openalex.org/W2461874365","https://openalex.org/W2524730200","https://openalex.org/W2538806413","https://openalex.org/W2588011613","https://openalex.org/W2592901630","https://openalex.org/W2593495332","https://openalex.org/W2741393736","https://openalex.org/W2770485657","https://openalex.org/W2775811677","https://openalex.org/W2809745529","https://openalex.org/W2962935972","https://openalex.org/W2969408521","https://openalex.org/W3040163937","https://openalex.org/W4241070446"],"related_works":["https://openalex.org/W2899084033","https://openalex.org/W2151207161","https://openalex.org/W4225871739","https://openalex.org/W2019258919","https://openalex.org/W3026436046","https://openalex.org/W2779930018","https://openalex.org/W1679432894","https://openalex.org/W2146900655","https://openalex.org/W4206261375","https://openalex.org/W4212799859"],"abstract_inverted_index":{"A":[0],"new":[1],"circuit":[2],"architecture":[3],"to":[4],"drive":[5],"GaN":[6,40,50,59,93],"e-HEMT":[7,41,51,94],"power":[8,95],"device":[9,42],"was":[10,16],"proposed":[11,29,58],"in":[12],"this":[13],"work,":[14],"which":[15],"taped":[17],"out":[18],"on":[19,39],"TSMC":[20],"0.18um":[21],"BCD":[22],"process":[23],"and":[24,68,79,89],"successfully":[25,45],"tested.":[26],"With":[27],"the":[28,86],"driver":[30,60],"circuit,":[31],"gate":[32,77],"voltage":[33],"overshoot":[34],"as":[35,37],"well":[36],"ringing":[38,78],"has":[43],"been":[44],"suppressed,":[46],"while":[47],"not":[48],"sacrificing":[49],"advantage":[52],"of":[53],"high":[54],"switching":[55],"speed.":[56],"The":[57],"realized":[61],"1.1ns":[62],"rising":[63],"time,":[64,67],"910ps":[65],"falling":[66],"minimum":[69],"1.8ns":[70],"output":[71],"pulse":[72],"width":[73],"with":[74],"almost":[75],"no":[76],"overshoot.":[80],"This":[81],"technology":[82],"could":[83],"potentially":[84],"improve":[85],"system":[87],"stability":[88],"reliability":[90],"when":[91],"driving":[92],"devices.":[96]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}