{"id":"https://openalex.org/W3166457930","doi":"https://doi.org/10.1587/elex.18.20210234","title":"High-speed switching operation for a SiC CMOS and power module","display_name":"High-speed switching operation for a SiC CMOS and power module","publication_year":2021,"publication_date":"2021-06-13","ids":{"openalex":"https://openalex.org/W3166457930","doi":"https://doi.org/10.1587/elex.18.20210234","mag":"3166457930"},"language":"en","primary_location":{"id":"doi:10.1587/elex.18.20210234","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.18.20210234","pdf_url":"https://www.jstage.jst.go.jp/article/elex/18/14/18_18.20210234/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/18/14/18_18.20210234/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5065533956","display_name":"Atsushi Yao","orcid":"https://orcid.org/0000-0002-4968-068X"},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Atsushi Yao","raw_affiliation_strings":["National Institute of Advanced Industrial Science and Technology (AIST)"],"affiliations":[{"raw_affiliation_string":"National Institute of Advanced Industrial Science and Technology (AIST)","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018925721","display_name":"Mitsuo Okamoto","orcid":"https://orcid.org/0000-0003-3261-8705"},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Mitsuo Okamoto","raw_affiliation_strings":["National Institute of Advanced Industrial Science and Technology (AIST)"],"affiliations":[{"raw_affiliation_string":"National Institute of Advanced Industrial Science and Technology (AIST)","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031378296","display_name":"Fumiki Kato","orcid":"https://orcid.org/0000-0001-7877-1567"},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Fumiki Kato","raw_affiliation_strings":["National Institute of Advanced Industrial Science and Technology (AIST)"],"affiliations":[{"raw_affiliation_string":"National Institute of Advanced Industrial Science and Technology (AIST)","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012200315","display_name":"Hiroshi Hozoji","orcid":null},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroshi Hozoji","raw_affiliation_strings":["National Institute of Advanced Industrial Science and Technology (AIST)"],"affiliations":[{"raw_affiliation_string":"National Institute of Advanced Industrial Science and Technology (AIST)","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016626357","display_name":"Shinji Sato","orcid":"https://orcid.org/0000-0002-7888-2117"},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shinji Sato","raw_affiliation_strings":["National Institute of Advanced Industrial Science and Technology (AIST)"],"affiliations":[{"raw_affiliation_string":"National Institute of Advanced Industrial Science and Technology (AIST)","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035973880","display_name":"Shinsuke Harada","orcid":"https://orcid.org/0000-0002-0053-4606"},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shinsuke Harada","raw_affiliation_strings":["National Institute of Advanced Industrial Science and Technology (AIST)"],"affiliations":[{"raw_affiliation_string":"National Institute of Advanced Industrial Science and Technology (AIST)","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5030792663","display_name":"Hiroshi Sato","orcid":"https://orcid.org/0000-0001-9285-1635"},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroshi Sato","raw_affiliation_strings":["National Institute of Advanced Industrial Science and Technology (AIST)"],"affiliations":[{"raw_affiliation_string":"National Institute of Advanced Industrial Science and Technology (AIST)","institution_ids":["https://openalex.org/I73613424"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5065533956"],"corresponding_institution_ids":["https://openalex.org/I73613424"],"apc_list":null,"apc_paid":null,"fwci":0.6016,"has_fulltext":true,"cited_by_count":10,"citation_normalized_percentile":{"value":0.66316666,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":"18","issue":"14","first_page":"20210234","last_page":"20210234"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.9972000122070312,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.8162959814071655},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.7227234840393066},{"id":"https://openalex.org/keywords/switching-time","display_name":"Switching time","score":0.6980149149894714},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6734219789505005},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5911394953727722},{"id":"https://openalex.org/keywords/fast-switching","display_name":"Fast switching","score":0.5565450191497803},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5285096764564514},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5119706392288208},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4658058285713196},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.4540267586708069},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.4119876027107239},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.35999980568885803},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.29011571407318115},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.24560096859931946},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22296422719955444},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.0764617919921875}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.8162959814071655},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.7227234840393066},{"id":"https://openalex.org/C199310435","wikidata":"https://www.wikidata.org/wiki/Q7659121","display_name":"Switching time","level":2,"score":0.6980149149894714},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6734219789505005},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5911394953727722},{"id":"https://openalex.org/C3019721787","wikidata":"https://www.wikidata.org/wiki/Q180805","display_name":"Fast switching","level":3,"score":0.5565450191497803},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5285096764564514},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5119706392288208},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4658058285713196},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.4540267586708069},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.4119876027107239},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35999980568885803},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.29011571407318115},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.24560096859931946},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22296422719955444},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0764617919921875},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.18.20210234","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.18.20210234","pdf_url":"https://www.jstage.jst.go.jp/article/elex/18/14/18_18.20210234/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.18.20210234","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.18.20210234","pdf_url":"https://www.jstage.jst.go.jp/article/elex/18/14/18_18.20210234/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.7699999809265137}],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W3166457930.pdf","grobid_xml":"https://content.openalex.org/works/W3166457930.grobid-xml"},"referenced_works_count":30,"referenced_works":["https://openalex.org/W267840210","https://openalex.org/W1582527544","https://openalex.org/W1984078715","https://openalex.org/W2008316743","https://openalex.org/W2033185403","https://openalex.org/W2046574619","https://openalex.org/W2095141385","https://openalex.org/W2096624038","https://openalex.org/W2097550317","https://openalex.org/W2132735843","https://openalex.org/W2134529477","https://openalex.org/W2171886847","https://openalex.org/W2208355597","https://openalex.org/W2216425415","https://openalex.org/W2318916889","https://openalex.org/W2399919487","https://openalex.org/W2538806413","https://openalex.org/W2613582614","https://openalex.org/W2741393736","https://openalex.org/W2811177677","https://openalex.org/W2892265097","https://openalex.org/W2917434888","https://openalex.org/W2918685588","https://openalex.org/W2962935972","https://openalex.org/W3024186172","https://openalex.org/W3040163937","https://openalex.org/W3096053415","https://openalex.org/W3118149900","https://openalex.org/W3134573510","https://openalex.org/W3169589621"],"related_works":["https://openalex.org/W4285789043","https://openalex.org/W2742861573","https://openalex.org/W2084063759","https://openalex.org/W2888779372","https://openalex.org/W2055119798","https://openalex.org/W4205375338","https://openalex.org/W4367044158","https://openalex.org/W2022320372","https://openalex.org/W2770473595","https://openalex.org/W2025039390"],"abstract_inverted_index":{"This":[0],"paper":[1],"deals":[2],"with":[3],"the":[4,26,31,43,72,76,81,85,89],"high-speed":[5,27],"switching":[6,47,91],"operation":[7],"of":[8,49,60,67,75,84],"a":[9,14,56,64],"main":[10],"circuit":[11],"when":[12],"using":[13,30],"silicon":[15],"carbide":[16],"(SiC)":[17],"complementary":[18],"metal-oxide":[19],"semiconductor":[20],"(CMOS)":[21],"and":[22,35,45,52,63,80],"power":[23,33,87],"module":[24,34],"for":[25],"drive.":[28],"When":[29],"developed":[32,77],"SiC":[36,78,86],"CMOS":[37,79],"gate":[38,82],"buffer,":[39],"we":[40],"experimentally":[41],"achieved":[42],"turn-on":[44],"turn-off":[46],"speeds":[48],"about":[50],"-100":[51],"80":[53],"V/ns":[54],"at":[55],"DC":[57],"bus":[58],"voltage":[59],"600":[61],"V":[62],"load":[65],"current":[66],"20":[68],"A.":[69],"Based":[70],"on":[71],"I-V":[73],"characteristics":[74],"charge":[83],"MOSFET,":[88],"approximate":[90],"time":[92],"was":[93],"calculated.":[94]},"counts_by_year":[{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}