{"id":"https://openalex.org/W3007636942","doi":"https://doi.org/10.1587/elex.17.20200025","title":"SPICE simulation of 32-kHz crystal-oscillator operation based on Si tunnel FET","display_name":"SPICE simulation of 32-kHz crystal-oscillator operation based on Si tunnel FET","publication_year":2020,"publication_date":"2020-01-01","ids":{"openalex":"https://openalex.org/W3007636942","doi":"https://doi.org/10.1587/elex.17.20200025","mag":"3007636942"},"language":"en","primary_location":{"id":"doi:10.1587/elex.17.20200025","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.17.20200025","pdf_url":"https://www.jstage.jst.go.jp/article/elex/17/6/17_17.20200025/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/17/6/17_17.20200025/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5071982671","display_name":"Tetsufumi Tanamoto","orcid":"https://orcid.org/0000-0002-1373-2812"},"institutions":[{"id":"https://openalex.org/I87531838","display_name":"Teikyo University","ror":"https://ror.org/01gaw2478","country_code":"JP","type":"education","lineage":["https://openalex.org/I87531838"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Tetsufumi Tanamoto","raw_affiliation_strings":["Dept. of Information and Electronic Engineering, Teikyo University"],"affiliations":[{"raw_affiliation_string":"Dept. of Information and Electronic Engineering, Teikyo University","institution_ids":["https://openalex.org/I87531838"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057948807","display_name":"Chika Tanaka","orcid":"https://orcid.org/0000-0001-5370-4747"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Chika Tanaka","raw_affiliation_strings":["Memory Division, Kioxia Corporation"],"affiliations":[{"raw_affiliation_string":"Memory Division, Kioxia Corporation","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5042410367","display_name":"Shinichi Takagi","orcid":"https://orcid.org/0000-0002-5601-2604"},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shinichi Takagi","raw_affiliation_strings":["School of Engineering, The University of Tokyo"],"affiliations":[{"raw_affiliation_string":"School of Engineering, The University of Tokyo","institution_ids":["https://openalex.org/I74801974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5071982671"],"corresponding_institution_ids":["https://openalex.org/I87531838"],"apc_list":null,"apc_paid":null,"fwci":0.1039,"has_fulltext":true,"cited_by_count":1,"citation_normalized_percentile":{"value":0.4001929,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"17","issue":"6","first_page":"20200025","last_page":"20200025"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.831727921962738},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6388741731643677},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6363394260406494},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5614498853683472},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.5052765011787415},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.4913693964481354},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.46847525238990784},{"id":"https://openalex.org/keywords/crystal","display_name":"Crystal (programming language)","score":0.45610952377319336},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.44382333755493164},{"id":"https://openalex.org/keywords/crystal-oscillator","display_name":"Crystal oscillator","score":0.4341021180152893},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.42605409026145935},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4120326340198517},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3909037709236145},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3877134323120117},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.27008068561553955},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.26557493209838867},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2562706470489502},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.21158334612846375},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.08490493893623352}],"concepts":[{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.831727921962738},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6388741731643677},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6363394260406494},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5614498853683472},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5052765011787415},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4913693964481354},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.46847525238990784},{"id":"https://openalex.org/C2781285689","wikidata":"https://www.wikidata.org/wiki/Q21921428","display_name":"Crystal (programming language)","level":2,"score":0.45610952377319336},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.44382333755493164},{"id":"https://openalex.org/C172137495","wikidata":"https://www.wikidata.org/wiki/Q877055","display_name":"Crystal oscillator","level":3,"score":0.4341021180152893},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.42605409026145935},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4120326340198517},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3909037709236145},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3877134323120117},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.27008068561553955},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.26557493209838867},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2562706470489502},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.21158334612846375},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08490493893623352},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C97126364","wikidata":"https://www.wikidata.org/wiki/Q349669","display_name":"Resonator","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1587/elex.17.20200025","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.17.20200025","pdf_url":"https://www.jstage.jst.go.jp/article/elex/17/6/17_17.20200025/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},{"id":"pmh:oai:irdb.nii.ac.jp:00953:0006738744","is_oa":false,"landing_page_url":"https://teikyo-u.repo.nii.ac.jp/records/2023652","pdf_url":null,"source":{"id":"https://openalex.org/S7407056385","display_name":"Institutional Repositories DataBase (IRDB)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I184597095","host_organization_name":"National Institute of Informatics","host_organization_lineage":["https://openalex.org/I184597095"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEICE Electronics Express","raw_type":"journal article"}],"best_oa_location":{"id":"doi:10.1587/elex.17.20200025","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.17.20200025","pdf_url":"https://www.jstage.jst.go.jp/article/elex/17/6/17_17.20200025/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G3282004645","display_name":null,"funder_award_id":"JPMJCR","funder_id":"https://openalex.org/F4320338075","funder_display_name":"Core Research for Evolutional Science and Technology"},{"id":"https://openalex.org/G8239987676","display_name":null,"funder_award_id":"JPMJCR1332","funder_id":"https://openalex.org/F4320338075","funder_display_name":"Core Research for Evolutional Science and Technology"}],"funders":[{"id":"https://openalex.org/F4320338075","display_name":"Core Research for Evolutional Science and Technology","ror":"https://ror.org/00097mb19"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W3007636942.pdf","grobid_xml":"https://content.openalex.org/works/W3007636942.grobid-xml"},"referenced_works_count":28,"referenced_works":["https://openalex.org/W590130269","https://openalex.org/W1540771715","https://openalex.org/W1965218662","https://openalex.org/W1982108952","https://openalex.org/W1987289463","https://openalex.org/W2002432286","https://openalex.org/W2006562083","https://openalex.org/W2009624223","https://openalex.org/W2032197740","https://openalex.org/W2040475153","https://openalex.org/W2048848279","https://openalex.org/W2075436949","https://openalex.org/W2075586275","https://openalex.org/W2096787575","https://openalex.org/W2135827787","https://openalex.org/W2136682844","https://openalex.org/W2143084321","https://openalex.org/W2153311374","https://openalex.org/W2153717872","https://openalex.org/W2469367567","https://openalex.org/W2584230513","https://openalex.org/W2585007608","https://openalex.org/W2783939285","https://openalex.org/W2787522697","https://openalex.org/W2790462401","https://openalex.org/W2898117223","https://openalex.org/W2963786304","https://openalex.org/W3101983986"],"related_works":["https://openalex.org/W2204879205","https://openalex.org/W1943174035","https://openalex.org/W2096437374","https://openalex.org/W1928481607","https://openalex.org/W1485582195","https://openalex.org/W57337972","https://openalex.org/W1561306903","https://openalex.org/W2563702065","https://openalex.org/W2168322670","https://openalex.org/W2378478264"],"abstract_inverted_index":{"The":[0],"tunnel":[1],"field-effect":[2],"transistor":[3,59],"(TFET)":[4],"is":[5,12],"one":[6],"of":[7,28,40,49,94,102,117],"the":[8,46,57,91,112],"promising":[9],"transistors":[10],"which":[11],"expected":[13],"to":[14,36],"replace":[15],"some":[16],"complementary":[17],"metal-oxide":[18],"semiconductor":[19],"(CMOS)":[20],"circuits.":[21],"Here,":[22],"we":[23,110],"apply":[24],"a":[25,29,37,74],"SPICE":[26],"simulation":[27],"Si":[30,50],"TFET":[31,51],"using":[32],"high-K":[33],"gate":[34],"insulator":[35],"simple":[38],"circuit":[39],"32-kHz":[41],"crystal":[42],"oscillator":[43],"and":[44,67,109],"compare":[45],"power":[47,92,115],"consumption":[48,116],"with":[52],"conventional":[53],"CMOSs":[54,103],"calculated":[55],"from":[56,81],"predictive":[58],"model":[60,76],"(PTM).":[61],"We":[62,88],"considered":[63],"L":[64,68,105,120],"=":[65,69,106,121],"65-nm":[66,107],"90-nm":[70,122],"devices":[71],"based":[72],"on":[73],"table":[75],"whose":[77],"values":[78],"are":[79,96],"derived":[80],"technology":[82],"computer":[83],"aided":[84],"design":[85],"(TCAD)":[86],"calculations.":[87],"show":[89,111],"that":[90],"consumptions":[93],"TFETs":[95,118],"about":[97],"22.3%\u223c38.6%":[98],"lower":[99,114],"than":[100],"those":[101],"for":[104,119],"devices,":[108],"13.6%\u223c36.1%":[113],"devices.":[123]},"counts_by_year":[{"year":2020,"cited_by_count":1}],"updated_date":"2026-04-04T16:13:02.066488","created_date":"2025-10-10T00:00:00"}