{"id":"https://openalex.org/W2982589484","doi":"https://doi.org/10.1587/elex.16.20190516","title":"Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process","display_name":"Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process","publication_year":2019,"publication_date":"2019-01-01","ids":{"openalex":"https://openalex.org/W2982589484","doi":"https://doi.org/10.1587/elex.16.20190516","mag":"2982589484"},"language":"en","primary_location":{"id":"doi:10.1587/elex.16.20190516","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.16.20190516","pdf_url":"https://www.jstage.jst.go.jp/article/elex/16/22/16_16.20190516/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/16/22/16_16.20190516/_pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5114165073","display_name":"Yuki Yamashita","orcid":null},"institutions":[{"id":"https://openalex.org/I27429435","display_name":"Kyoto Institute of Technology","ror":"https://ror.org/00965ax52","country_code":"JP","type":"education","lineage":["https://openalex.org/I27429435"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Yuki Yamashita","raw_affiliation_strings":["Graduate School of Science and Technology, Kyoto Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Graduate School of Science and Technology, Kyoto Institute of Technology","institution_ids":["https://openalex.org/I27429435"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062138171","display_name":"Steve Stoffels","orcid":"https://orcid.org/0000-0003-1748-688X"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Steve Stoffels","raw_affiliation_strings":["Interuniversity Microelectronics Centre"],"affiliations":[{"raw_affiliation_string":"Interuniversity Microelectronics Centre","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046174818","display_name":"Niels Posthuma","orcid":"https://orcid.org/0000-0002-6029-1909"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Niels Posthuma","raw_affiliation_strings":["Interuniversity Microelectronics Centre"],"affiliations":[{"raw_affiliation_string":"Interuniversity Microelectronics Centre","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019671684","display_name":"Karen Geens","orcid":"https://orcid.org/0000-0003-1815-3972"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Karen Geens","raw_affiliation_strings":["Interuniversity Microelectronics Centre"],"affiliations":[{"raw_affiliation_string":"Interuniversity Microelectronics Centre","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100416441","display_name":"Xiangdong Li","orcid":"https://orcid.org/0000-0002-6694-0914"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]},{"id":"https://openalex.org/I99464096","display_name":"KU Leuven","ror":"https://ror.org/05f950310","country_code":"BE","type":"education","lineage":["https://openalex.org/I99464096"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Xiangdong Li","raw_affiliation_strings":["Department of Electrical Engineering, KU Leuven","Interuniversity Microelectronics Centre"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, KU Leuven","institution_ids":["https://openalex.org/I99464096"]},{"raw_affiliation_string":"Interuniversity Microelectronics Centre","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050140256","display_name":"Jun Furuta","orcid":"https://orcid.org/0000-0003-0146-3077"},"institutions":[{"id":"https://openalex.org/I27429435","display_name":"Kyoto Institute of Technology","ror":"https://ror.org/00965ax52","country_code":"JP","type":"education","lineage":["https://openalex.org/I27429435"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Jun Furuta","raw_affiliation_strings":["Graduate School of Science and Technology, Kyoto Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Graduate School of Science and Technology, Kyoto Institute of Technology","institution_ids":["https://openalex.org/I27429435"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008126297","display_name":"Stefaan Decoutere","orcid":"https://orcid.org/0000-0001-6632-6239"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Stefaan Decoutere","raw_affiliation_strings":["Interuniversity Microelectronics Centre"],"affiliations":[{"raw_affiliation_string":"Interuniversity Microelectronics Centre","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5049656449","display_name":"Kazutoshi Kobayashi","orcid":"https://orcid.org/0000-0002-7139-7274"},"institutions":[{"id":"https://openalex.org/I27429435","display_name":"Kyoto Institute of Technology","ror":"https://ror.org/00965ax52","country_code":"JP","type":"education","lineage":["https://openalex.org/I27429435"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kazutoshi Kobayashi","raw_affiliation_strings":["Graduate School of Science and Technology, Kyoto Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Graduate School of Science and Technology, Kyoto Institute of Technology","institution_ids":["https://openalex.org/I27429435"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5114165073"],"corresponding_institution_ids":["https://openalex.org/I27429435"],"apc_list":null,"apc_paid":null,"fwci":1.2344,"has_fulltext":true,"cited_by_count":9,"citation_normalized_percentile":{"value":0.79570444,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"16","issue":"22","first_page":"20190516","last_page":"20190516"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.996399998664856,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.6971363425254822},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6770606637001038},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.6760110855102539},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6130858659744263},{"id":"https://openalex.org/keywords/gate-driver","display_name":"Gate driver","score":0.5115448236465454},{"id":"https://openalex.org/keywords/parasitic-extraction","display_name":"Parasitic extraction","score":0.475394606590271},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.45778030157089233},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.42235225439071655},{"id":"https://openalex.org/keywords/parasitic-element","display_name":"Parasitic element","score":0.413601815700531},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.32521241903305054},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2456435263156891},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1272444725036621},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.09391522407531738},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.09025493264198303},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.06716245412826538}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.6971363425254822},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6770606637001038},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.6760110855102539},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6130858659744263},{"id":"https://openalex.org/C179141203","wikidata":"https://www.wikidata.org/wiki/Q1495747","display_name":"Gate driver","level":3,"score":0.5115448236465454},{"id":"https://openalex.org/C159818811","wikidata":"https://www.wikidata.org/wiki/Q7135947","display_name":"Parasitic extraction","level":2,"score":0.475394606590271},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.45778030157089233},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.42235225439071655},{"id":"https://openalex.org/C71367568","wikidata":"https://www.wikidata.org/wiki/Q3363655","display_name":"Parasitic element","level":2,"score":0.413601815700531},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32521241903305054},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2456435263156891},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1272444725036621},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.09391522407531738},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.09025493264198303},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.06716245412826538}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1587/elex.16.20190516","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.16.20190516","pdf_url":"https://www.jstage.jst.go.jp/article/elex/16/22/16_16.20190516/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},{"id":"pmh:oai:lirias2repo.kuleuven.be:123456789/647180","is_oa":true,"landing_page_url":"https://lirias.kuleuven.be/bitstream/123456789/647180/2/IEICE.pdf","pdf_url":null,"source":{"id":"https://openalex.org/S4306401954","display_name":"Lirias (KU Leuven)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I99464096","host_organization_name":"KU Leuven","host_organization_lineage":["https://openalex.org/I99464096"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Ieice Electronics Express, vol. 16 (22), Art.No. ARTN 20190516","raw_type":"info:eu-repo/semantics/publishedVersion"}],"best_oa_location":{"id":"doi:10.1587/elex.16.20190516","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.16.20190516","pdf_url":"https://www.jstage.jst.go.jp/article/elex/16/22/16_16.20190516/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.8999999761581421,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G12401395","display_name":null,"funder_award_id":"Technology","funder_id":"https://openalex.org/F4320320912","funder_display_name":"Ministry of Education, Culture, Sports, Science and Technology"}],"funders":[{"id":"https://openalex.org/F4320320912","display_name":"Ministry of Education, Culture, Sports, Science and Technology","ror":"https://ror.org/048rj2z13"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2982589484.pdf","grobid_xml":"https://content.openalex.org/works/W2982589484.grobid-xml"},"referenced_works_count":28,"referenced_works":["https://openalex.org/W1582527544","https://openalex.org/W1646937549","https://openalex.org/W1975307200","https://openalex.org/W1980548135","https://openalex.org/W2039551153","https://openalex.org/W2044314598","https://openalex.org/W2095866418","https://openalex.org/W2106755750","https://openalex.org/W2136084559","https://openalex.org/W2148535911","https://openalex.org/W2174408095","https://openalex.org/W2199035027","https://openalex.org/W2200502077","https://openalex.org/W2400224803","https://openalex.org/W2508858054","https://openalex.org/W2517658922","https://openalex.org/W2523806141","https://openalex.org/W2570628802","https://openalex.org/W2615917763","https://openalex.org/W2741797930","https://openalex.org/W2747198274","https://openalex.org/W2774349069","https://openalex.org/W2783805907","https://openalex.org/W2800339899","https://openalex.org/W2903851740","https://openalex.org/W2904882047","https://openalex.org/W2914604620","https://openalex.org/W2982818143"],"related_works":["https://openalex.org/W3113886925","https://openalex.org/W2128175041","https://openalex.org/W2898913182","https://openalex.org/W2707943909","https://openalex.org/W4200168772","https://openalex.org/W2904882047","https://openalex.org/W2081394942","https://openalex.org/W4200621850","https://openalex.org/W2023657072","https://openalex.org/W2080431801"],"abstract_inverted_index":{"Reducing":[0],"parasitic":[1,39],"coupling":[2],"components":[3],"can":[4],"improve":[5],"switching":[6,34,78],"performance":[7,35],"in":[8],"electric":[9],"circuits.":[10],"A":[11],"two-stage":[12],"gate":[13,72],"driver":[14],"and":[15,61,84,95],"power":[16],"Gallium":[17],"Nitride":[18],"High":[19],"Electron":[20],"Mobility":[21],"Transistors":[22],"(GaN":[23],"HEMT)":[24],"were":[25],"monolithically":[26],"integrated":[27],"for":[28],"MHz-switching.":[29],"The":[30,41,74],"monolithic":[31],"integration":[32],"improves":[33],"owing":[36],"to":[37],"minimized":[38],"inductance.":[40],"proposed":[42,75],"GaN-IC":[43,57,76],"was":[44],"fabricated":[45],"using":[46,69],"an":[47],"enhancement-mode":[48],"GaN-on-Insulator":[49],"process":[50],"technology.":[51],"Experimental":[52],"results":[53],"showed":[54],"that":[55],"the":[56],"had":[58],"faster":[59],"transition":[60],"less":[62],"energy":[63],"loss":[64],"than":[65],"a":[66,70],"conventional":[67],"circuit":[68],"discrete":[71],"driver.":[73],"reduced":[77],"time":[79],"by":[80,85],"86%":[81],"at":[82,87],"turn-off":[83],"45%":[86],"turn-on":[88],"under":[89],"off-state":[90],"VDS":[91],"of":[92,98],"100":[93],"V":[94],"on-state":[96],"ID":[97],"10":[99],"A.":[100]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":5},{"year":2020,"cited_by_count":2}],"updated_date":"2026-03-12T08:34:05.389933","created_date":"2025-10-10T00:00:00"}