{"id":"https://openalex.org/W2969215200","doi":"https://doi.org/10.1587/elex.16.20190392","title":"An experimental study on dynamic junction temperature estimation of SiC MOSFET with built-in SBD","display_name":"An experimental study on dynamic junction temperature estimation of SiC MOSFET with built-in SBD","publication_year":2019,"publication_date":"2019-01-01","ids":{"openalex":"https://openalex.org/W2969215200","doi":"https://doi.org/10.1587/elex.16.20190392","mag":"2969215200"},"language":"en","primary_location":{"id":"doi:10.1587/elex.16.20190392","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.16.20190392","pdf_url":"https://www.jstage.jst.go.jp/article/elex/16/17/16_16.20190392/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/16/17/16_16.20190392/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5012866780","display_name":"Shuhei Fukunaga","orcid":"https://orcid.org/0000-0001-6058-2047"},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"Osaka University","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Shuhei Fukunaga","raw_affiliation_strings":["Osaka Univ., Div. of Electrical, Electronic and Information Eng., Graduate School of Eng"],"affiliations":[{"raw_affiliation_string":"Osaka Univ., Div. of Electrical, Electronic and Information Eng., Graduate School of Eng","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059950859","display_name":"Tsuyoshi Funaki","orcid":"https://orcid.org/0000-0001-8776-5118"},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"Osaka University","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tsuyoshi Funaki","raw_affiliation_strings":["Osaka Univ., Div. of Electrical, Electronic and Information Eng., Graduate School of Eng"],"affiliations":[{"raw_affiliation_string":"Osaka Univ., Div. of Electrical, Electronic and Information Eng., Graduate School of Eng","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035973880","display_name":"Shinsuke Harada","orcid":"https://orcid.org/0000-0002-0053-4606"},"institutions":[{"id":"https://openalex.org/I4210151891","display_name":"Advanced Power Electronics (United States)","ror":"https://ror.org/05hakgg65","country_code":"US","type":"company","lineage":["https://openalex.org/I4210151891"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shinsuke Harada","raw_affiliation_strings":["Advanced Power Electronics Research Center, National Inst. of Advanced Industrial Sci. and Tech. (AIST)"],"affiliations":[{"raw_affiliation_string":"Advanced Power Electronics Research Center, National Inst. of Advanced Industrial Sci. and Tech. (AIST)","institution_ids":["https://openalex.org/I4210151891"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101908643","display_name":"Yusuke Kobayashi","orcid":"https://orcid.org/0000-0002-4793-2548"},"institutions":[{"id":"https://openalex.org/I4210151891","display_name":"Advanced Power Electronics (United States)","ror":"https://ror.org/05hakgg65","country_code":"US","type":"company","lineage":["https://openalex.org/I4210151891"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yusuke Kobayashi","raw_affiliation_strings":["Advanced Power Electronics Research Center, National Inst. of Advanced Industrial Sci. and Tech. (AIST)"],"affiliations":[{"raw_affiliation_string":"Advanced Power Electronics Research Center, National Inst. of Advanced Industrial Sci. and Tech. (AIST)","institution_ids":["https://openalex.org/I4210151891"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5012866780"],"corresponding_institution_ids":["https://openalex.org/I98285908"],"apc_list":null,"apc_paid":null,"fwci":0.1192,"has_fulltext":true,"cited_by_count":8,"citation_normalized_percentile":{"value":0.4581596,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"16","issue":"17","first_page":"20190392","last_page":"20190392"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.8197066783905029},{"id":"https://openalex.org/keywords/junction-temperature","display_name":"Junction temperature","score":0.7697048187255859},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.629228949546814},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.5765413045883179},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.5640000104904175},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.5523024797439575},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5111499428749084},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.49993228912353516},{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.46782559156417847},{"id":"https://openalex.org/keywords/thermal","display_name":"Thermal","score":0.4531151056289673},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.44843947887420654},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4468716084957123},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.41726404428482056},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3566451072692871},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2219836711883545},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.16096314787864685},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.13434189558029175}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.8197066783905029},{"id":"https://openalex.org/C167781694","wikidata":"https://www.wikidata.org/wiki/Q6311800","display_name":"Junction temperature","level":3,"score":0.7697048187255859},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.629228949546814},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.5765413045883179},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.5640000104904175},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.5523024797439575},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5111499428749084},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.49993228912353516},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.46782559156417847},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.4531151056289673},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.44843947887420654},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4468716084957123},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.41726404428482056},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3566451072692871},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2219836711883545},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.16096314787864685},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13434189558029175},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.16.20190392","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.16.20190392","pdf_url":"https://www.jstage.jst.go.jp/article/elex/16/17/16_16.20190392/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.16.20190392","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.16.20190392","pdf_url":"https://www.jstage.jst.go.jp/article/elex/16/17/16_16.20190392/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8700000047683716,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2969215200.pdf","grobid_xml":"https://content.openalex.org/works/W2969215200.grobid-xml"},"referenced_works_count":26,"referenced_works":["https://openalex.org/W1517890617","https://openalex.org/W1990374314","https://openalex.org/W2005192532","https://openalex.org/W2029699094","https://openalex.org/W2052550522","https://openalex.org/W2058498152","https://openalex.org/W2085804909","https://openalex.org/W2086152513","https://openalex.org/W2091749383","https://openalex.org/W2096035326","https://openalex.org/W2096805806","https://openalex.org/W2102319213","https://openalex.org/W2119418964","https://openalex.org/W2127100446","https://openalex.org/W2193374437","https://openalex.org/W2314592649","https://openalex.org/W2533670403","https://openalex.org/W2559734905","https://openalex.org/W2592782048","https://openalex.org/W2608241360","https://openalex.org/W2738984167","https://openalex.org/W2786692520","https://openalex.org/W2795631262","https://openalex.org/W2799011300","https://openalex.org/W2913427217","https://openalex.org/W4245755231"],"related_works":["https://openalex.org/W2904257419","https://openalex.org/W2096922220","https://openalex.org/W4293080302","https://openalex.org/W2998984984","https://openalex.org/W2369460078","https://openalex.org/W2894889665","https://openalex.org/W2132384248","https://openalex.org/W2111612194","https://openalex.org/W4200308310","https://openalex.org/W3184288073"],"abstract_inverted_index":{"Thermal":[0],"characterization":[1],"with":[2,52,94],"static":[3],"test":[4],"method":[5],"[1],":[6],"which":[7,61],"utilizes":[8],"I":[9],"\u2212":[10],"V":[11],"characteristics":[12,90],"of":[13,50,79,91],"power":[14,28,92],"semiconductor":[15],"devices":[16],"to":[17,74,86],"estimate":[18],"junction":[19,53],"temperature":[20],"(TJ),":[21],"has":[22],"attracted":[23],"attention":[24],"for":[25,42,56,81],"high":[26],"density":[27],"conversion":[29],"system":[30],"design.":[31],"However,":[32],"the":[33,57],"dynamic":[34,88],"gate":[35],"threshold":[36],"voltage":[37,54],"shift":[38],"distorts":[39],"TJ":[40,51,80],"estimation":[41],"SiC":[43,59,82,95],"MOSFET.":[44,96],"This":[45,70],"paper":[46],"evaluates":[47],"time":[48,77],"response":[49,78],"(VJ)":[55],"developed":[58],"MOSFET,":[60,83],"embeds":[62],"Schottky":[63],"barrier":[64],"diode":[65],"(SBD)":[66],"in":[67],"this":[68],"structure.":[69],"sophisticated":[71],"structure":[72],"enables":[73],"get":[75],"accurate":[76],"and":[84],"hence":[85],"design":[87],"thermal":[89],"modules":[93]},"counts_by_year":[{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}