{"id":"https://openalex.org/W2903331249","doi":"https://doi.org/10.1587/elex.15.20180878","title":"Temperature-dependent characterizations on parasitic capacitance of tapered through silicon via (T-TSV)","display_name":"Temperature-dependent characterizations on parasitic capacitance of tapered through silicon via (T-TSV)","publication_year":2018,"publication_date":"2018-01-01","ids":{"openalex":"https://openalex.org/W2903331249","doi":"https://doi.org/10.1587/elex.15.20180878","mag":"2903331249"},"language":"en","primary_location":{"id":"doi:10.1587/elex.15.20180878","is_oa":true,"landing_page_url":"http://doi.org/10.1587/elex.15.20180878","pdf_url":"https://www.jstage.jst.go.jp/article/elex/15/24/15_15.20180878/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/15/24/15_15.20180878/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100355682","display_name":"Yang Liu","orcid":"https://orcid.org/0000-0001-6981-0974"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yang Liu","raw_affiliation_strings":["Shaanxi Key Lab. of Integrated Circuits and Systems, School of Microelectronics, Xidian University","Shaanxi Key Lab. of Integrated Circuits and Systems, School of Microelectronics, Xidian University, Xi'an 710071, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Shaanxi Key Lab. of Integrated Circuits and Systems, School of Microelectronics, Xidian University","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"Shaanxi Key Lab. of Integrated Circuits and Systems, School of Microelectronics, Xidian University, Xi'an 710071, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101667715","display_name":"Zhangming Zhu","orcid":null},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhangming Zhu","raw_affiliation_strings":["Shaanxi Key Lab. of Integrated Circuits and Systems, School of Microelectronics, Xidian University","Shaanxi Key Lab. of Integrated Circuits and Systems, School of Microelectronics, Xidian University, Xi'an 710071, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Shaanxi Key Lab. of Integrated Circuits and Systems, School of Microelectronics, Xidian University","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"Shaanxi Key Lab. of Integrated Circuits and Systems, School of Microelectronics, Xidian University, Xi'an 710071, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078781709","display_name":"Xiaoxian Liu","orcid":"https://orcid.org/0000-0002-1798-7572"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaoxian Liu","raw_affiliation_strings":["Shaanxi Key Lab. of Integrated Circuits and Systems, School of Microelectronics, Xidian University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Shaanxi Key Lab. of Integrated Circuits and Systems, School of Microelectronics, Xidian University","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049448415","display_name":"Huaxi Gu","orcid":"https://orcid.org/0000-0002-6409-2229"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Huaxi Gu","raw_affiliation_strings":["School of Telecommunications Engineering, Xidian University","Shaanxi Key Lab. of Integrated Circuits and Systems, School of Microelectronics, Xidian University, Xi'an 710071, China","School of Telecommunications Engineering, Xidian University, Xi'an 710071, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Telecommunications Engineering, Xidian University","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"Shaanxi Key Lab. of Integrated Circuits and Systems, School of Microelectronics, Xidian University, Xi'an 710071, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"School of Telecommunications Engineering, Xidian University, Xi'an 710071, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5009314993","display_name":"Lixin Guo","orcid":"https://orcid.org/0000-0003-3854-206X"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lixin Guo","raw_affiliation_strings":["School of Physics and Optoelectronic, Xidian University","School of Physics and Optoelectronic, Xidian University, Xi'an 710071, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Physics and Optoelectronic, Xidian University","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"School of Physics and Optoelectronic, Xidian University, Xi'an 710071, China","institution_ids":["https://openalex.org/I149594827"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I149594827"],"apc_list":null,"apc_paid":null,"fwci":0.1975,"has_fulltext":true,"cited_by_count":3,"citation_normalized_percentile":{"value":0.5402197,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"15","issue":"24","first_page":"20180878","last_page":"20180878"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10460","display_name":"Electronic Packaging and Soldering Technologies","score":0.9972000122070312,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9972000122070312,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.7515318393707275},{"id":"https://openalex.org/keywords/through-silicon-via","display_name":"Through-silicon via","score":0.7510286569595337},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7467201948165894},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.6346505880355835},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5350827574729919},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.4918394088745117},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3887012004852295},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13486754894256592},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10368865728378296}],"concepts":[{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.7515318393707275},{"id":"https://openalex.org/C45632049","wikidata":"https://www.wikidata.org/wiki/Q1578120","display_name":"Through-silicon via","level":3,"score":0.7510286569595337},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7467201948165894},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.6346505880355835},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5350827574729919},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4918394088745117},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3887012004852295},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13486754894256592},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10368865728378296},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.15.20180878","is_oa":true,"landing_page_url":"http://doi.org/10.1587/elex.15.20180878","pdf_url":"https://www.jstage.jst.go.jp/article/elex/15/24/15_15.20180878/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.15.20180878","is_oa":true,"landing_page_url":"http://doi.org/10.1587/elex.15.20180878","pdf_url":"https://www.jstage.jst.go.jp/article/elex/15/24/15_15.20180878/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G1689481996","display_name":null,"funder_award_id":"61704126","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G2709588797","display_name":null,"funder_award_id":"61574104","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G5247460008","display_name":null,"funder_award_id":"61604113","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G7010476974","display_name":null,"funder_award_id":"61625403","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2903331249.pdf","grobid_xml":"https://content.openalex.org/works/W2903331249.grobid-xml"},"referenced_works_count":15,"referenced_works":["https://openalex.org/W1565947964","https://openalex.org/W1895380742","https://openalex.org/W2013517711","https://openalex.org/W2040315932","https://openalex.org/W2062099370","https://openalex.org/W2109314689","https://openalex.org/W2124047460","https://openalex.org/W2155707315","https://openalex.org/W2167079884","https://openalex.org/W2289762361","https://openalex.org/W2316150533","https://openalex.org/W2599824193","https://openalex.org/W2617086827","https://openalex.org/W2632262989","https://openalex.org/W2803788456"],"related_works":["https://openalex.org/W2058545256","https://openalex.org/W2394034449","https://openalex.org/W2051045034","https://openalex.org/W2904654231","https://openalex.org/W2999380399","https://openalex.org/W2910612019","https://openalex.org/W4210807885","https://openalex.org/W2248915580","https://openalex.org/W2059163921","https://openalex.org/W4304890870"],"abstract_inverted_index":{"With":[0],"increasing":[1],"integration":[2],"density":[3],"of":[4,10,14,29,35,42,46,55,86,99,122],"three-dimensional":[5],"ICs,":[6],"temperature":[7,69,147],"is":[8,38,49,61,66,79,107,125,131],"one":[9],"the":[11,19,26,43,53,75,80,84,90,97,110,115,120,126,146],"major":[12],"concern":[13],"circuit":[15],"design,":[16],"which":[17],"influences":[18],"performance":[20],"and":[21,74,89],"reliability.":[22],"In":[23],"this":[24],"paper,":[25],"parasitic":[27],"capacitance":[28,57,65,77,88],"tapered":[30,136],"TSV":[31,56,64,87,100,116,130,143],"(T-TSV)":[32],"with":[33,93],"respect":[34],"thermal":[36,133],"properties":[37],"studied.":[39],"The":[40,128],"concept":[41],"Temperature":[44],"Coefficient":[45],"Capacitance":[47],"(TCC)":[48],"proposed":[50],"to":[51,58,68],"model":[52],"sensitive":[54,67,134],"temperature.":[59,95],"It":[60,106],"found":[62],"that":[63,109],"under":[70],"high":[71],"frequency":[72],"application,":[73],"MOS":[76],"variation":[78],"main":[81],"reason":[82],"for":[83,142],"change":[85],"TCC":[91,103,111],"increases":[92,112],"elevated":[94],"Furthermore,":[96],"affection":[98],"dimensions":[101],"on":[102],"are":[104],"discussed.":[105],"shown":[108],"gradually":[113],"as":[114],"radius":[117],"increases,":[118],"while":[119],"thickness":[121],"dielectric":[123],"layer":[124],"opposite.":[127],"cylinder":[129],"less":[132],"than":[135],"TSV.":[137],"This":[138],"paper":[139],"provides":[140],"basis":[141],"design":[144],"considering":[145],"effect.":[148]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1}],"updated_date":"2026-07-22T07:51:19.307946","created_date":"2025-10-10T00:00:00"}