{"id":"https://openalex.org/W2890899775","doi":"https://doi.org/10.1587/elex.15.20180675","title":"A radiation-hardened programmable read only memory for space applications","display_name":"A radiation-hardened programmable read only memory for space applications","publication_year":2018,"publication_date":"2018-01-01","ids":{"openalex":"https://openalex.org/W2890899775","doi":"https://doi.org/10.1587/elex.15.20180675","mag":"2890899775"},"language":"en","primary_location":{"id":"doi:10.1587/elex.15.20180675","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.15.20180675","pdf_url":"https://www.jstage.jst.go.jp/article/elex/15/19/15_15.20180675/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/15/19/15_15.20180675/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5077426132","display_name":"Xiaodong Xie","orcid":"https://orcid.org/0000-0002-7747-5819"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xiaodong Xie","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101654892","display_name":"Xiwen Zhang","orcid":"https://orcid.org/0000-0002-5245-0703"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiwen Zhang","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101843238","display_name":"Wei Li","orcid":"https://orcid.org/0000-0003-1353-9809"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wei Li","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100716869","display_name":"Tao Du","orcid":"https://orcid.org/0000-0003-3021-0888"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Tao Du","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5077426132"],"corresponding_institution_ids":["https://openalex.org/I150229711","https://openalex.org/I4210124847"],"apc_list":null,"apc_paid":null,"fwci":0.1303,"has_fulltext":true,"cited_by_count":2,"citation_normalized_percentile":{"value":0.48869984,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"15","issue":"19","first_page":"20180675","last_page":"20180675"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11032","display_name":"VLSI and Analog Circuit Testing","score":0.9886999726295471,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9876999855041504,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/prom","display_name":"Prom","score":0.7649307250976562},{"id":"https://openalex.org/keywords/absorbed-dose","display_name":"Absorbed dose","score":0.7394347190856934},{"id":"https://openalex.org/keywords/linear-energy-transfer","display_name":"Linear energy transfer","score":0.6926373243331909},{"id":"https://openalex.org/keywords/radiation-hardening","display_name":"Radiation hardening","score":0.5963512063026428},{"id":"https://openalex.org/keywords/single-event-upset","display_name":"Single event upset","score":0.5890578627586365},{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.5612707138061523},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.5286441445350647},{"id":"https://openalex.org/keywords/radiation","display_name":"Radiation","score":0.5242112874984741},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.48167598247528076},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.44841068983078003},{"id":"https://openalex.org/keywords/upset","display_name":"Upset","score":0.4475121796131134},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.4053250551223755},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.3779921531677246},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.31936824321746826},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.25799667835235596},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.21225082874298096},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.20662283897399902},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.157802015542984},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.09047982096672058}],"concepts":[{"id":"https://openalex.org/C2777364248","wikidata":"https://www.wikidata.org/wiki/Q1150737","display_name":"Prom","level":2,"score":0.7649307250976562},{"id":"https://openalex.org/C151337348","wikidata":"https://www.wikidata.org/wiki/Q215313","display_name":"Absorbed dose","level":3,"score":0.7394347190856934},{"id":"https://openalex.org/C86611320","wikidata":"https://www.wikidata.org/wiki/Q1699996","display_name":"Linear energy transfer","level":3,"score":0.6926373243331909},{"id":"https://openalex.org/C119349744","wikidata":"https://www.wikidata.org/wiki/Q3026015","display_name":"Radiation hardening","level":3,"score":0.5963512063026428},{"id":"https://openalex.org/C2780073065","wikidata":"https://www.wikidata.org/wiki/Q1476733","display_name":"Single event upset","level":3,"score":0.5890578627586365},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.5612707138061523},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.5286441445350647},{"id":"https://openalex.org/C153385146","wikidata":"https://www.wikidata.org/wiki/Q18335","display_name":"Radiation","level":2,"score":0.5242112874984741},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.48167598247528076},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44841068983078003},{"id":"https://openalex.org/C2778002589","wikidata":"https://www.wikidata.org/wiki/Q2406791","display_name":"Upset","level":2,"score":0.4475121796131134},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.4053250551223755},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.3779921531677246},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.31936824321746826},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25799667835235596},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.21225082874298096},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.20662283897399902},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.157802015542984},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.09047982096672058},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.0},{"id":"https://openalex.org/C131872663","wikidata":"https://www.wikidata.org/wiki/Q5284418","display_name":"Obstetrics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.15.20180675","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.15.20180675","pdf_url":"https://www.jstage.jst.go.jp/article/elex/15/19/15_15.20180675/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.15.20180675","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.15.20180675","pdf_url":"https://www.jstage.jst.go.jp/article/elex/15/19/15_15.20180675/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.5,"display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G3195689043","display_name":null,"funder_award_id":"KFJJ201608","funder_id":"https://openalex.org/F4320327035","funder_display_name":"National Key Laboratory of Electronic Thin Films and Integrated Devices"}],"funders":[{"id":"https://openalex.org/F4320327035","display_name":"National Key Laboratory of Electronic Thin Films and Integrated Devices","ror":null},{"id":"https://openalex.org/F4320329860","display_name":"National Science and Technology Major Project","ror":null}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2890899775.pdf","grobid_xml":"https://content.openalex.org/works/W2890899775.grobid-xml"},"referenced_works_count":11,"referenced_works":["https://openalex.org/W1494964381","https://openalex.org/W1987260043","https://openalex.org/W1999168858","https://openalex.org/W2034562756","https://openalex.org/W2055482341","https://openalex.org/W2076819442","https://openalex.org/W2121903726","https://openalex.org/W2127973690","https://openalex.org/W2171195755","https://openalex.org/W2529497682","https://openalex.org/W2772446577"],"related_works":["https://openalex.org/W156385707","https://openalex.org/W2198370492","https://openalex.org/W2556349311","https://openalex.org/W2189493566","https://openalex.org/W2099245758","https://openalex.org/W2012451149","https://openalex.org/W2061095037","https://openalex.org/W4386320364","https://openalex.org/W2100150400","https://openalex.org/W2782053880"],"abstract_inverted_index":{"A":[0],"radiation-hardened":[1],"64-Kb":[2],"Programmable":[3],"Read":[4],"Only":[5],"Memory":[6],"(PROM)":[7],"fabricated":[8],"by":[9],"0.18":[10],"um":[11],"commercial":[12],"technology":[13],"is":[14,20],"proposed.":[15],"The":[16,99],"Radiation-Harden-By-Design":[17],"(RHBD)":[18],"technique":[19],"applied":[21,72],"in":[22],"the":[23,26,29,44,60,65,74,78,81,86,120],"design":[24],"of":[25,35,143],"PROM.":[27],"At":[28,43],"cell":[30],"level,":[31,46],"memory":[32],"cells":[33],"consisting":[34],"two":[36],"high":[37],"reliable":[38],"antifuse":[39],"elements":[40],"are":[41,50,71],"used.":[42],"circuit":[45],"robust":[47],"sense":[48],"amplifiers":[49],"designed":[51],"with":[52,92],"Dual":[53],"Interlocked":[54],"Cell":[55],"(DICE)":[56],"latches":[57],"added":[58],"to":[59,109,138],"radiation":[61],"sensitive":[62],"nodes.":[63],"Furthermore,":[64],"enclosed":[66],"NMOS":[67],"and":[68,90,116,129],"guard":[69],"rings":[70],"at":[73,85],"layout":[75],"level.":[76],"As":[77],"measurement":[79],"showed,":[80],"PROM":[82],"could":[83],"operate":[84],"temperature":[87],"between":[88],"\u221255":[89],"+125\u00b0C":[91],"55":[93],"ns":[94],"maximum":[95],"address":[96],"access":[97,117],"time.":[98,118],"TID":[100],"(Total":[101],"Ionizing":[102],"Dose)":[103],"test":[104],"showed":[105],"that":[106],"irradiation":[107],"dose":[108],"5M":[110],"rad(Si)":[111],"negligibly":[112],"impacted":[113],"standby":[114],"current":[115],"In":[119],"heavy":[121],"ion":[122],"test,":[123],"no":[124,130],"SEU":[125],"(Single":[126,132],"Event":[127,133],"Upset)":[128],"SEL":[131],"Latch-up)":[134],"were":[135],"observed":[136],"up":[137],"LET":[139],"(Linear":[140],"Energy":[141],"Transfer)":[142],"64.4":[144],"Mev\u00b7cm2/mg.":[145]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2026-03-14T08:43:22.919905","created_date":"2025-10-10T00:00:00"}