{"id":"https://openalex.org/W2963786304","doi":"https://doi.org/10.1587/elex.15.20171232","title":"SPICE simulation of tunnel FET aiming at 32 kHz crystal-oscillator operation","display_name":"SPICE simulation of tunnel FET aiming at 32 kHz crystal-oscillator operation","publication_year":2018,"publication_date":"2018-01-01","ids":{"openalex":"https://openalex.org/W2963786304","doi":"https://doi.org/10.1587/elex.15.20171232","mag":"2963786304"},"language":"en","primary_location":{"id":"doi:10.1587/elex.15.20171232","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.15.20171232","pdf_url":"https://www.jstage.jst.go.jp/article/elex/15/3/15_15.20171232/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://www.jstage.jst.go.jp/article/elex/15/3/15_15.20171232/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5071982671","display_name":"Tetsufumi Tanamoto","orcid":"https://orcid.org/0000-0002-1373-2812"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Tetsufumi Tanamoto","raw_affiliation_strings":["Corporate R and D Center, Toshiba Corporation"],"affiliations":[{"raw_affiliation_string":"Corporate R and D Center, Toshiba Corporation","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057948807","display_name":"Chika Tanaka","orcid":"https://orcid.org/0000-0001-5370-4747"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Chika Tanaka","raw_affiliation_strings":["Corporate R and D Center, Toshiba Corporation"],"affiliations":[{"raw_affiliation_string":"Corporate R and D Center, Toshiba Corporation","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111938114","display_name":"Satoshi Takaya","orcid":"https://orcid.org/0000-0001-9402-1694"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Satoshi Takaya","raw_affiliation_strings":["Corporate R and D Center, Toshiba Corporation"],"affiliations":[{"raw_affiliation_string":"Corporate R and D Center, Toshiba Corporation","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109524015","display_name":"Masato Koyama","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masato Koyama","raw_affiliation_strings":["Corporate R and D Center, Toshiba Corporation"],"affiliations":[{"raw_affiliation_string":"Corporate R and D Center, Toshiba Corporation","institution_ids":["https://openalex.org/I1292669757"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5071982671"],"corresponding_institution_ids":["https://openalex.org/I1292669757"],"apc_list":null,"apc_paid":null,"fwci":0.391,"has_fulltext":true,"cited_by_count":3,"citation_normalized_percentile":{"value":0.65873339,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":97},"biblio":{"volume":"15","issue":"3","first_page":"20171232","last_page":"20171232"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.9212670922279358},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6870669722557068},{"id":"https://openalex.org/keywords/crystal-oscillator","display_name":"Crystal oscillator","score":0.6181557178497314},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.594838559627533},{"id":"https://openalex.org/keywords/emphasis","display_name":"Emphasis (telecommunications)","score":0.5448749661445618},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.518817126750946},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.514947235584259},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5147064328193665},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.5064898729324341},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.4366621673107147},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.41143855452537537},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.34445637464523315},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.23824509978294373},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.13527774810791016}],"concepts":[{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.9212670922279358},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6870669722557068},{"id":"https://openalex.org/C172137495","wikidata":"https://www.wikidata.org/wiki/Q877055","display_name":"Crystal oscillator","level":3,"score":0.6181557178497314},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.594838559627533},{"id":"https://openalex.org/C177454536","wikidata":"https://www.wikidata.org/wiki/Q578290","display_name":"Emphasis (telecommunications)","level":2,"score":0.5448749661445618},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.518817126750946},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.514947235584259},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5147064328193665},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.5064898729324341},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4366621673107147},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.41143855452537537},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.34445637464523315},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.23824509978294373},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13527774810791016},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C97126364","wikidata":"https://www.wikidata.org/wiki/Q349669","display_name":"Resonator","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.15.20171232","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.15.20171232","pdf_url":"https://www.jstage.jst.go.jp/article/elex/15/3/15_15.20171232/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.15.20171232","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.15.20171232","pdf_url":"https://www.jstage.jst.go.jp/article/elex/15/3/15_15.20171232/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8999999761581421}],"awards":[{"id":"https://openalex.org/G3282004645","display_name":null,"funder_award_id":"JPMJCR","funder_id":"https://openalex.org/F4320338075","funder_display_name":"Core Research for Evolutional Science and Technology"},{"id":"https://openalex.org/G8239987676","display_name":null,"funder_award_id":"JPMJCR1332","funder_id":"https://openalex.org/F4320338075","funder_display_name":"Core Research for Evolutional Science and Technology"}],"funders":[{"id":"https://openalex.org/F4320338075","display_name":"Core Research for Evolutional Science and Technology","ror":"https://ror.org/00097mb19"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2963786304.pdf","grobid_xml":"https://content.openalex.org/works/W2963786304.grobid-xml"},"referenced_works_count":12,"referenced_works":["https://openalex.org/W2009624223","https://openalex.org/W2032197740","https://openalex.org/W2062632887","https://openalex.org/W2075586275","https://openalex.org/W2110584581","https://openalex.org/W2153717872","https://openalex.org/W2403120204","https://openalex.org/W2465910944","https://openalex.org/W2584230513","https://openalex.org/W2585007608","https://openalex.org/W2763896882","https://openalex.org/W2949851389"],"related_works":["https://openalex.org/W2055105357","https://openalex.org/W2153819599","https://openalex.org/W2255426644","https://openalex.org/W2072124641","https://openalex.org/W2167093538","https://openalex.org/W2018956713","https://openalex.org/W1971573522","https://openalex.org/W2081479354","https://openalex.org/W2166972143","https://openalex.org/W2378478264"],"abstract_inverted_index":{"We":[0],"numerically":[1],"investigate":[2],"the":[3,45],"possibility":[4],"of":[5,48,53],"using":[6,24],"Tunnel":[7],"field-effect":[8],"transistor":[9,39],"(TFET)":[10],"in":[11],"a":[12,37],"32":[13],"kHz":[14],"crystal":[15],"oscillator":[16],"circuit":[17],"to":[18],"reduce":[19],"power":[20,46],"consumption.":[21],"A":[22],"simulation":[23],"SPICE":[25],"(Simulation":[26],"Program":[27],"with":[28],"Integrated":[29],"Circuit":[30],"Emphasis)":[31],"is":[32,42,50],"carried":[33],"out":[34],"based":[35],"on":[36],"CMOS":[38],"model.":[40],"It":[41],"shown":[43],"that":[44,52],"consumption":[47],"TFET":[49],"one-tenth":[51],"conventional":[54],"low-power":[55],"CMOS.":[56]},"counts_by_year":[{"year":2020,"cited_by_count":3}],"updated_date":"2026-03-14T08:43:22.919905","created_date":"2025-10-10T00:00:00"}